Patents by Inventor Gregory T. Stauf
Gregory T. Stauf has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9219232Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: GrantFiled: April 11, 2014Date of Patent: December 22, 2015Assignee: ENTEGRIS, INC.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Matthias Stender, Philip S. H. Chen, Gregory T. Stauf, Bryan C. Hendrix
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Patent number: 8877549Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.Type: GrantFiled: March 24, 2014Date of Patent: November 4, 2014Assignee: Advanced Technology Materials, Inc.Inventors: Jeffrey F. Roeder, Thomas H. Baum, Bryan C. Hendrix, Gregory T. Stauf, Chongying Xu, William Hunks, Tianniu Chen, Matthias Stender
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Publication number: 20140220733Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: ApplicationFiled: April 11, 2014Publication date: August 7, 2014Applicant: Advanced Technology Materials, Inc.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Matthias Stender, Philip S.H. Chen, Gregory T. Stauf, Bryan C. Hendrix
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Publication number: 20140206134Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.Type: ApplicationFiled: March 24, 2014Publication date: July 24, 2014Applicant: Advanced Technology Materials, Inc.Inventors: Jeffrey F. Roeder, Thomas H. Baum, Bryan C. Hendrix, Gregory T. Stauf, Chongying Xu, William Hunks, Tianniu Chen, Matthias Stender
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Publication number: 20140134823Abstract: High-k materials and devices, e.g., DRAM capacitors, and methods of making and using the same. Various methods of forming perovskite films are described, including methods in which perovskite material is deposited on the substrate by a pulsed vapor deposition process involving contacting of the substrate with perovskite material-forming metal precursors. In one such method, the process is carried out with doping or alloying of the perovskite material with a higher mobility and/or higher volatility metal species than the metal species in the perovskite material-forming metal precursors. In another method, the perovskite material is exposed to elevated temperature for sufficient time to crystallize or to enhance crystallization of the perovskite material, followed by growth of the perovskite material under pulsed vapor deposition conditions. Various perovskite compositions are described, including: (Sr, Pb)TiO3; SrRuO3 or SrTiO3, doped with Zn, Cd or Hg; Sr(Sn,Ru)O3; and Sr(Sn,Ti)O3.Type: ApplicationFiled: June 19, 2012Publication date: May 15, 2014Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Bryan C. Hendrix, Steven M. Bilodeau, Ing-Shin Barry Chen, Jeffrey F. Roeder, Gregory T. Stauf
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Patent number: 8709863Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: GrantFiled: September 18, 2012Date of Patent: April 29, 2014Assignee: Advanced Technology Materials, Inc.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Matthias Stender, Philip S. H. Chen, Gregory T. Stauf, Bryan C. Hendrix
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Patent number: 8679894Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.Type: GrantFiled: September 12, 2012Date of Patent: March 25, 2014Assignee: Advanced Technology Materials, Inc.Inventors: Jeffrey F. Roeder, Thomas H. Baum, Bryan C. Hendrix, Gregory T. Stauf, Chongying Xu, William Hunks, Tianniu Chen, Matthias Stender
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Patent number: 8603252Abstract: A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part.Type: GrantFiled: April 26, 2007Date of Patent: December 10, 2013Assignee: Advanced Technology Materials, Inc.Inventors: Frank Dimeo, James Dietz, W. Karl Olander, Robert Kaim, Steven Bishop, Jeffrey W. Neuner, Jose Arno, Paul J. Marganski, Joseph D. Sweeney, David Eldridge, Sharad Yedave, Oleg Byl, Gregory T. Stauf
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Publication number: 20130029456Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: ApplicationFiled: September 18, 2012Publication date: January 31, 2013Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Matthias Stender, Philip S.H. Chen, Gregory T. Stauf, Bryan C. Hendrix
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Publication number: 20130005078Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.Type: ApplicationFiled: September 12, 2012Publication date: January 3, 2013Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Jeffrey F. Roeder, Thomas H. Baum, Bryan C. Hendrix, Gregory T. Stauf, Chongying Xu, William Hunks, Tianniu Chen, Matthias Stender
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Patent number: 8288198Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C. with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.Type: GrantFiled: March 12, 2007Date of Patent: October 16, 2012Assignee: Advanced Technology Materials, Inc.Inventors: Jeffrey F. Roeder, Thomas H. Baum, Bryan C. Hendrix, Gregory T. Stauf, Chongying Xu, William Hunks, Tianniu Chen, Matthias Stender
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Patent number: 8268665Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: GrantFiled: June 26, 2011Date of Patent: September 18, 2012Assignee: Advanced Technology Materials, Inc.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Matthias Stender, Philip S. H. Chen, Gregory T. Stauf, Bryan C. Hendrix
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Publication number: 20120127629Abstract: A composite dielectric material including an early transition metal or metal oxide base material and a dopant, co-deposited, alloying or layering secondary material, selected from among Nb, Ge, Ta, La, Y, Ce, Pr, Nd, Gd, Dy, Sr, Ba, Ca, and Mg, and oxides of such metals, and alumina as a dopant or alloying secondary material. Such composite dielectric material can be formed by vapor deposition processes, e.g., ALD, using suitable precursors, to form microelectronic devices such as ferroelectric high k capacitors, gate structures, DRAMs, and the like.Type: ApplicationFiled: April 14, 2010Publication date: May 24, 2012Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Jeffrey F. Roeder, Bryan C. Hendrix, Steven M. Bilodeau, Gregory T. Stauf, Tianniu Chen, Thomas M. Cameron, Chongying Xu
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Publication number: 20110263100Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: ApplicationFiled: June 26, 2011Publication date: October 27, 2011Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Matthias Stender, Philip S.H. Chen, Gregory T. Stauf, Bryan C. Hendrix
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Patent number: 8008117Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: GrantFiled: August 22, 2010Date of Patent: August 30, 2011Assignee: Advanced Technology Materials, Inc.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Melissa A. Petruska, Matthias Stender, Philip S. H. Chen, Gregory T. Stauf, Bryan C. Hendrix
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Patent number: 7858525Abstract: A method including introducing a fluorine-free organometallic precursor in the presence of a substrate; and forming a conductive layer including a moiety of the organometallic precursor on the substrate according to an atomic layer or chemical vapor deposition process. A method including forming an opening through a dielectric layer to a contact point; introducing a fluorine-free copper film precursor and a co-reactant; and forming a copper-containing seed layer in the opening. A system including a computer including a microprocessor electrically coupled to a printed circuit board, the microprocessor including conductive interconnect structures formed from fluorine-free organometallic precursor.Type: GrantFiled: March 30, 2007Date of Patent: December 28, 2010Assignee: Intel CorporationInventors: Juan E. Dominguez, Adrien R. Lavoie, John J. Plombon, Joseph H. Han, Harsono S. Simka, Bryan C. Hendrix, Gregory T. Stauf
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Publication number: 20100317150Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: ApplicationFiled: August 22, 2010Publication date: December 16, 2010Applicant: Advanced Technology Materials, Inc.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Melissa A. Petruska, Matthias Stender, Philip S.H. Chen, Gregory T. Stauf, Bryan C. Hendrix
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Patent number: 7838329Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.Type: GrantFiled: May 12, 2007Date of Patent: November 23, 2010Assignee: Advanced Technology Materials, Inc.Inventors: William Hunks, Tianniu Chen, Chongying Xu, Jeffrey F. Roeder, Thomas H. Baum, Melissa A. Petruska, Matthias Stender, Philip S. H. Chen, Gregory T. Stauf, Bryan C. Hendrix
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Publication number: 20100279011Abstract: Bismuth precursors having utility for forming highly conformal bismuth-containing films by low temperature (<300° C.) vapor deposition processes such as CVD and ALD, including bismuth aminidates, bismuth guanidates, bismuth isoureates, bismuth carbamates and bismuth thiocarbamates, bismuth beta-diketonates, bismuth diketoiminates, bismuth diketiiminates, bismuth allyls, bismuth cyclopentadienyls, bismuth alkyls, bismuth alkoxides, and bismuth silyls with pendant ligands, bismuth silylamides, bismuth chelated amides, and bismuth ditelluroimidodiphosphinates. Also described are methods of making such precursors, and packaged forms of such precursors suitable for use in the manufacture of microelectronic device products. These bismuth precursors are usefully employed to form bismuth-containing films, such as films of GBT, Bi2Te3, Bi4Ti3O12, SrBi2Ta2O9, Bi—Ta—O, BiP and thermoelectric bismuth-containing films.Type: ApplicationFiled: October 31, 2008Publication date: November 4, 2010Applicant: Advanced Technology Materials, Inc.Inventors: Tianniu Chen, Chongying Xu, Bryan C. Hendrix, William Hunks, Thomas M. Cameron, Matthias Stender, Gregory T. Stauf, Jeffrey F. Roeder
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Publication number: 20100154835Abstract: A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part.Type: ApplicationFiled: April 26, 2007Publication date: June 24, 2010Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Frank Dimeo, James Dietz, Karl W. Olander, Robert Kaim, Steven Bishop, Jeffrey W. Neuner, Jose Arno, Paul J. Marganski, Joseph D. Sweeney, David Eldridge, Sharad Yedave, Oleg Byl, Gregory T. Stauf