Abstract: The present invention relates to the technical field of display and provides a test circuit, an array substrate, and a display panel. The array substrate comprises a plurality of signal lines. The test circuit comprises: a plurality of first switch units having one-to-one correspondence with the signal lines, the first switch units having first ends connected to first ends of the signal lines, second ends mutually short-circuited, and control ends connected to first control signal ends; and a plurality of second switch units having one-to-one correspondence with the signal lines, the second switch units having first ends connected to second ends of the signal lines, second ends mutually short-circuited, and control ends connected to second control signal ends, wherein the plurality of first switch units and the plurality of second switch units have one-to-one correspondence with the signal lines.

Abstract: Provided are a detection method and a detection device, the detection method includes: in a first writing stage, providing an active voltage to each data line, each power supply terminal, both ends of a first gate line to-be-detected, an absolute value of the active voltage of each data line is smaller than that of the active voltage of the power supply terminal, an absolute value of the active voltage of the first gate line to-be-detected is smaller than that of the active voltage of each data line; in a first detection stage, maintaining the active voltage of the power supply terminal, providing an inactive voltage to the first gate line to-be-detected and providing an active voltage to the data line, detecting voltages at second electrodes of storage capacitors corresponding to the first gate line to-be-detected, determining whether the first gate line to-be-detected has breakpoint according to the detected voltages.

Abstract: A pressure sensing unit includes: a first substrate and a second substrate opposite to each other; and at least one vertical thin film transistor disposed between the first substrate and the second substrate. Each vertical thin film transistor includes a first electrode, a semiconductor active layer, a second electrode, at least one insulating support, and a gate electrode sequentially disposed in a direction extending from the first substrate to the second substrate. A first air gap is formed by the presence of the at least one insulating support between the gate electrode and the second electrode of each vertical thin film transistor.

Abstract: The present disclosure provides an array substrate, a method for manufacturing the array substrate, a display panel and a display device. The array substrate includes: a substrate; a planarization layer on a side of the substrate; a pixel defining layer configured to define a pixel opening region and located on a side of the planarization layer away from the substrate; an anode in the pixel opening region and on a side of the planarization layer away from the substrate. The array substrate further includes an intermediate insulation layer between the planarization layer and the pixel defining layer. The intermediate insulation layer has a chemical polarity between a chemical polarity of the planarization layer and a chemical polarity of the pixel defining layer.

Abstract: An array substrate and a display device are provided in embodiments of the present disclosure. The array substrate includes a base substrate, a buffer layer, an active layer, a gate insulating layer, a gate electrode, an interlayer insulating layer, a source-drain electrode electrically conductive layer, a passivation layer, and a first light shielding layer. The first light shielding layer is disposed on a side of the passivation layer facing away from the interlayer insulating layer. An orthographic projection of the first light shielding layer on the base substrate at least partially overlaps with an orthographic projection of the active layer on the base substrate, and the first light shielding layer is formed by a photoresist material.

Abstract: The disclosure provides a display substrate, a method for fabricating the same, a display device. The display substrate includes a base and a display function layer on the base. The display function layer includes pixel circuits arranged in first and second directions, and data lines in the second direction. Each pixel circuit includes a driving capacitor and a driving transistor, a first electrode of the driving capacitor is in a same layer as the data lines; at least one data line includes at least one first sub-data line segment and at least one second sub-data line segment, a width of the first sub-data line segment is less than that of the second sub-data line segment, an orthographic projection of the first sub-data line on a virtual straight line in the second direction at least partially overlaps with that of the first electrode closest thereto on the virtual straight line.

Abstract: The present disclosure provides a gas screening film including at least one gas screening element, each of the at least one gas screening element includes a transistor including a gate, an insulation spacing layer, a first electrode, a semiconductor nanosheet separation layer and a second electrode, and the insulation spacing layer is disposed between the gate and the semiconductor nanosheet separation layer. The present disclosure further provides a manufacturing method of the gas screening film and a face mask. The gas screening film can screen and separate various different gases as necessary.

Abstract: A display substrate, a method for manufacturing the same, and a display device are disclosed. The display substrate includes: a base substrate; and a conductive pattern, a first insulating layer and a conductive layer laminated on the base substrate, wherein the first insulating layer has a plurality of first via holes, and the conductive layer includes a signal line, the signal line being electrically connected to the conductive pattern through the plurality of first via holes. The present disclosure may achieve efficient transmission of signals and ensure the display effect of the display device.

Abstract: A display substrate includes a base substrate; and a single pixel definition layer on the base substrate defining a plurality of subpixel apertures. The single pixel definition layer includes a plurality of hydrophobic particles dispersed in a main body for enhancing hydrophobicity of a portion of the single pixel definition layer.

Abstract: Embodiments of the present disclosure provide a method and a device for detecting a threshold voltage drift of a transistor in a pixel circuit, which are used for detecting the threshold voltage drift of the transistor to be detected in the pixel circuit. The transistor to be detected is at least one of the driving transistor and the detection transistor. The detection method comprises: inputting, during an inputting stage, a first turning-on voltage to the second scanning terminal, so as to turn on the detection transistor, enabling writing a first voltage into the second node through the detection signal terminal; inputting, during a detection stage, a first turning-off voltage to the second scanning terminal, so as to turn off the detection transistor, thereby detecting an actual voltage at the second node; and determining a state of the threshold voltage drift of the transistor to be detected according to the actual voltage and the first voltage.

Abstract: This disclosure relates to a battery assembly for an electrified vehicle and a corresponding method. An exemplary battery assembly includes a battery cell including a terminal, a busbar, and at least one first weld bead securing the busbar to the terminal. The at least one first weld bead is substantially Z-shaped.

Abstract: A method of detecting threshold voltage shift and a threshold voltage shift detection device are provided. The method is applied to a pixel driving circuit which I is electrically coupled to a control line, a voltage line and a detection node, respectively. The method includes: in a detection cycle including a setting phase and a detection phase, in the setting phase, controlling a transistor included in the pixel driving circuit to be in a biased state; in the detection phase, providing a preset control voltage signal to the control line, providing a preset voltage signal to the voltage line, and determining a threshold voltage shift state of the transistor according to an electric potential of the detection node.

Abstract: A display substrate, a method for manufacturing the display substrate, and a display device are provided. The display substrate includes a display area and a fanout area at the periphery of the display area. The fanout area includes a data line layer, a first power line layer, and at least two insulation layers between the data line layer and the first power line layer. In a direction perpendicular to a base substrate of the display substrate, the first power line layer overlaps the data line layer. At least one of the at least two insulation layers includes a portion which insulates the first power line layer and the data line layer from each other.

Abstract: A film patterning method, an array substrate, and a manufacturing method of an array substrate are disclosed. The film patterning method includes: applying photoresist on a film to be patterned; performing exposure and development on the photoresist, a region corresponding to a completely removed portion of the photoresist after the exposure and the development being a first region; post-baking the photoresist, so that the photoresist is melted and collapsed to change the region corresponding to the completely removed portion into a second region, the photoresist after post-baking forms into a mask pattern; and patterning the film by using the mask pattern as a mask.

Abstract: A thin film transistor, a display panel and a preparation method thereof and a display apparatus are provided. The thin film transistor includes: a substrate; a gate metal located on a side of the substrate; a gate insulating layer located on a side of the gate metal away from the substrate; an active layer located on a side of the gate insulating layer away from the substrate; a first metal oxide and a second metal oxide which are located on a side of the active layer away from the substrate and are arranged on a same layer; and a source metal and a drain metal which are located on sides of the first metal oxide and the second metal oxide away from the substrate and are arranged in a same layer.

Abstract: A thin-film transistor includes: an active layer having a first side and a second side opposing to the first side; a main gate electrode spaced from the active layer on the first side, and including a conductive material; an auxiliary gate electrode spaced from the active layer on the second side, wherein the auxiliary gate electrode includes a phase change material having a phase change temperature; the auxiliary gate electrode is configured to have a transition between insulating and conductive based on a temperature of the auxiliary gate electrode; and the main gate electrode and the auxiliary gate electrode are electrically coupled to each other when the auxiliary gate electrode is conductive.

Abstract: The present disclosure provides a thin film transistor, a thin film transistor array, and a method for detecting an object to be detected, wherein the thin film transistor is configured to detect a parameter of an object to be detected bound with a metal ion and includes an active layer, wherein: a carrier of the active layer without a metal element contained in the metal ion bound is of a first mobility, and a carrier of the active layer with the metal element bound is of a second mobility different from the first mobility.

Abstract: The present disclosure is related to a thin film transistor. The thin film transistor may include an active layer; a gate insulating layer on the active layer; and a gate and a plurality of metal films on the gate insulating layer. The plurality of metal films may be spaced apart from the gate, and insulated from the gate and the active layer.

Abstract: Embodiments of the present disclosure relate to the field of electronic sensing technologies, and provide a chemical sensing unit, a chemical sensor, and a chemical sensing device. The chemical sensing unit includes a thin film transistor arranged on a substrate, and a light emitting diode coupled to the thin film transistor. The thin film transistor includes a semiconductor active layer, a source, and a drain, and the semiconductor active layer is mainly composed of a chemically sensitive semiconductor material. The chemical sensing unit is provided with a via hole in a region between the source and the drain, such that the semiconductor active layer is exposed at a position corresponding to the via hole. The light emitting diode includes a first electrode, a light-emitting functional layer, and a second electrode which are stacked in sequence, wherein the first electrode is coupled to the drain.

Abstract: The present disclosure provides a pixel array and a fabrication method thereof. The pixel array includes a plurality of gate lines and a plurality of data lines which are arranged intersected and insulated and a pixel unit disposed at a position where each of the plurality of gate lines and each of the plurality of data lines are intersected. The pixel unit includes a thin film transistor (TFT). The width-to-length ratios of channels of the TFTs are sequentially increased in such a manner that the width-to-length ratios of the channels of the TFTs in the pixel units positioned in a same row (and/or a same column) are sequentially increased along a scanning direction of the gate line coupled to gate electrodes of the TFTs in the same row (and/or along a data writing direction of the data line coupled to the source electrodes of the TFTs in the same column).