Abstract: A radiation emitting semiconductor chip may include a radiation emitting surface, an epitaxial semiconductor layer sequence having active regions, and a mounting surface facing the radiation emitting surface. The mounting surface may include a plurality of first and second solderable contact surfaces. Each active region may be suppliable with current with a respective first and second solderable contact surface. The first solderable contact surfaces may be arranged in an inner region of the mounting surface. The second solderable contact surface may be arranged in an edge region of the mounting surface. Furthermore, a radiation emitting semiconductor device and a head lamp having such a semiconductor chip may also be useful.

Abstract: A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a semiconductor chip having an active region for radiation emission, applying a seed layer on the semiconductor chip, wherein the seed layer includes a first metal and a second metal being different from the first metal, and wherein the second metal is less noble than the first metal, applying a structured photoresist layer directly to the seed layer, applying a solder layer at least to regions of the seed layer which are not covered by the photoresist layer and wherein a proportion of the second metal in the seed layer is between 0.5 wt % and 10 wt %.

Abstract: The invention relates to an optoelectronic device (100) comprising a semiconductor layer sequence (1) on a carrier (7), the semiconductor layer sequence (1) comprising at least one n-doped semiconductor layer (11), at least one p-doped semiconductor layer (12) and an active layer (13) sandwiched between the p- and n-doped semiconductor layers (11, 12), an reconnecting contact (2), which is configured for electrically contacting the n-doped semiconductor layer (11), a p-connecting contact (3), which is configured for electrically contacting the p-doped semiconductor layer (12), the n-connecting contact (2) being arranged on the side of the semiconductor layer sequence (1) facing away from the carrier (7), the n-connecting contact (2) having a first side (4) which is arranged facing the semiconductor layer sequence (1), wherein the first side (4) has two outer regions (43) and an inner region (44), viewed in lateral cross-section, which is delimited by the outer regions (43), wherein the outer regions (43) of t

Abstract: A radiation emitting semiconductor chip may include a radiation emitting surface, an epitaxial semiconductor layer sequence having active regions, and a mounting surface facing the radiation emitting surface. The mounting surface may include a plurality of first and second solderable contact surfaces. Each active region may be suppliable with current with a respective first and second solderable contact surface. The first solderable contact surfaces may be arranged in an inner region of the mounting surface. The second solderable contact surface may be arranged in an edge region of the mounting surface. Furthermore, a radiation emitting semiconductor device and a head lamp having such a semiconductor chip may also be useful.

Abstract: An optoelectronic semiconductor device may include a plurality of picture elements, each of which include a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type arranged one above the other to form a semiconductor layer stack. The optoelectronic semiconductor device further includes separating elements arranged between adjacent picture elements and extend in a horizontal direction along a boundary of the adjacent picture element, adjoin the first and the second semiconductor layers, respectively, and extend in the vertical direction through the first and the second semiconductor layers, respectively.

Abstract: A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a semiconductor chip having an active region for radiation emission, applying a seed layer on the semiconductor chip, wherein the seed layer includes a first metal and a second metal being different from the first metal, and wherein the second metal is less noble than the first metal, applying a structured photoresist layer directly to the seed layer, applying a solder layer at least to regions of the seed layer which are not covered by the photoresist layer and wherein a proportion of the second metal in the seed layer is between 0.5 wt % and 10 wt %.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation, a dielectric layer, a solder layer including a first metal arranged on the dielectric layer and a seed layer arranged between the solder layer and the dielectric layer, wherein the seed layer includes the first metal and a second metal, wherein the second metal is less noble than the first metal, wherein an amount of the second metal in the seed layer is between 0.5 wt % and 10 wt %, and wherein the first metal is Au and the second metal is Zn.

Abstract: A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a semiconductor chip having an active region for radiation emission, applying a seed layer on the semiconductor chip, wherein the seed layer includes a first metal and a second metal being different from the first metal, and wherein the second metal is less noble than the first metal, applying a structured photoresist layer directly to the seed layer and applying a solder layer at least to regions of the seed layer which are not covered by the photoresist layer, wherein a ratio of the first metal to the second metal in the seed layer is between 95:5 to 99:1.

Abstract: The invention relates to an optoelectronic device (100) comprising a semiconductor layer sequence (1) on a carrier (7), the semiconductor layer sequence (1) comprising at least one n-doped semiconductor layer (11), at least one p-doped semiconductor layer (12) and an active layer (13) sandwiched between the p- and n-doped semiconductor layers (11, 12), an reconnecting contact (2), which is configured for electrically contacting the n-doped semiconductor layer (11), a p-connecting contact (3), which is configured for electrically contacting the p-doped semiconductor layer (12), the n-connecting contact (2) being arranged on the side of the semiconductor layer sequence (1) facing away from the carrier (7), the n-connecting contact (2) having a first side (4) which is arranged facing the semiconductor layer sequence (1), wherein the first side (4) has two outer regions (43) and an inner region (44), viewed in lateral cross-section, which is delimited by the outer regions (43), wherein the outer regions (43) of t

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation, a dielectric layer, a solder layer including a first metal arranged on the dielectric layer and a seed layer arranged between the solder layer and the dielectric layer, wherein the seed layer includes the first metal and a second metal, wherein the second metal is less noble than the first metal, wherein an amount of the second metal in the seed layer is between 0.5 wt % and 10 wt %, and wherein the first metal is Au and the second metal is Zn.

Abstract: A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a semiconductor chip having an active region for radiation emission, applying a seed layer on the semiconductor chip, wherein the seed layer includes a first metal and a second metal being different from the first metal, and wherein the second metal is less noble than the first metal, applying a structured photoresist layer directly to the seed layer and applying a solder layer at least to regions of the seed layer which are not covered by the photoresist layer, wherein a ratio of the first metal to the second metal in the seed layer is between 95:5 to 99:1.

Abstract: Disclosed is an optoelectronic semiconductor component (1) comprising a semiconductor member (2) that has a succession of semiconductor layers including an active region (20) for generating radiation, a first semiconductor layer (21), and a second semiconductor layer (22). The active region is located between the first semiconductor layer and the second semiconductor layer; the semiconductor member has a plurality of cavities (25) which extend through the second semiconductor layer and the active region; and from a bird's eye view onto the semiconductor member, the cavities are elongate and have a longitudinal axis (250).

Abstract: An optoelectronic semiconductor device includes a semiconductor body having a semiconductor region and an active region, wherein the semiconductor region has a covering layer forming a radiation passage surface of the semiconductor body on a side facing away from the active region, the semiconductor region has a current-spreading layer arranged between the covering layer and the active region; the semiconductor device has a contact for the electrical contacting of the semiconductor region; the contact adjoins the current-spreading layer in a terminal area; the contact adjoins the covering layer in a barrier region; and the barrier region runs parallel to the active region and is arranged closer to the active region than the radiation passage surface.

Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.

Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.

Abstract: An optoelectronic semiconductor device includes a semiconductor body having a semiconductor region and an active region, wherein the semiconductor region has a covering layer forming a radiation passage surface of the semiconductor body on a side facing away from the active region, the semiconductor region has a current-spreading layer arranged between the covering layer and the active region; the semiconductor device has a contact for the electrical contacting of the semiconductor region; the contact adjoins the current-spreading layer in a terminal area; the contact adjoins the covering layer in a barrier region; and the barrier region runs parallel to the active region and is arranged closer to the active region than the radiation passage surface.

Abstract: Disclosed is an optoelectronic semiconductor component (1) comprising a semiconductor member (2) that has a succession of semiconductor layers including an active region (20) for generating radiation, a first semiconductor layer (21), and a second semiconductor layer (22). The active region is located between the first semiconductor layer and the second semiconductor layer; the semiconductor member has a plurality of cavities (25) which extend through the second semiconductor layer and the active region; and from a bird's eye view onto the semiconductor member, the cavities are elongate and have a longitudinal axis (250).

Abstract: An optoelectronic semiconductor chip and a method for producing the same are disclosed. In an embodiment an optoelectronic semiconductor chip includes a support substrate, a semiconductor layer sequence having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active layer arranged therebetween, and a mirror layer arranged between the support substrate and the semiconductor layer sequence. The chip further includes a dielectric encapsulation layer arranged at least partly between the semiconductor layer sequence and the support substrate and a transparent dielectric cover layer partially covering a region of the encapsulation layer, wherein the mirror layer and side flanks of the mirror layer are covered by an electrically conductive protective layer.

Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.

Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side, the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area, said mirror layer containing silver, a protective layer is arranged on the mirror layer, and the protective layer comprises a transparent conductive oxide.