Abstract: The present invention relates to an apparatus and a method for the fluidic inline-treatment of flat substrates with at least one process module. In particular, the invention relates to such a treatment during the gentle and controlled transport of the substrates, wherein the treatment can also just relate to the transport of the substrates. According to the invention, a process module 1 is provided which comprises a treatment chamber 2 having at least one treatment surface 7A being substantially horizontally arranged in a treatment plane 5 and being designed for the formation of a lower fluid cushion 6A, wherein two openings in the form of entry 3 and exit 4 for the linear feed-through of the substrates 22 in the same plane are assigned to the treatment surface 7A, and at least one feed device with at least one catch 10 for the controlled feed 9 of the substrates 22 within the treatment chamber 2. Furthermore, the invention provides a method using the apparatus according to the invention.

Abstract: Semiconductor wafers are cut from a crystal and subjected to a series of processing steps in which material is removed from a front side and a rear side of the semiconductor wafers, comprising the following processing steps: a mechanical processing step, an etching step in which the semiconductor wafers are oxidized and material is removed from the front side of the wafers with the aid of a gaseous etchant containing hydrofluoric acid at a temperature of 20 to 70° C., and a polishing step in which the front side of the semiconductor wafer is polished, the processing steps in which the front side of the semiconductor wafer is polished causing material removal which does not amount to more than 5 ?m in total.

Abstract: Semiconductor wafers are cut from a crystal and subjected to a series of processing steps in which material is removed from a front side and a rear side of the semiconductor wafers, comprising the following processing steps: a mechanical processing step, an etching step in which the semiconductor wafers are oxidized and material is removed from the front side of the wafers with the aid of a gaseous etchant containing hydrofluoric acid at a temperature of 20 to 70° C., and a polishing step in which the front side of the semiconductor wafer is polished, the processing steps in which the front side of the semiconductor wafer is polished causing material removal which does not amount to more than 5 ?m in total.

Abstract: A layer structure comprising a smoothed interlayer and an overlying layer applied on the interlayer, wherein the interlayer is treated with a gaseous etchant containing hydrogen fluoride, a material removal being obtained thereby and the interlayer being smoothed.

Abstract: A device and process for the wet-chemical treatment of silicon using an etching liquid that contains water, nitric acid and hydrofluoric acid. The etching liquid is activated by introducing nitrogen oxide (NOx) into the etching liquid, before being used for the wet-chemical treatment of silicon. The device consists of a first vessel in which silicon is subjected to a wet-chemical treatment with the aid of an etching liquid, a second vessel in which fresh etching liquid is held ready, and a connecting line between the first vessel and the second vessel, through which nitrogen oxides (NOx) formed in the first vessel during the wet-chemical treatment are passed to the second vessel.

Abstract: A process for the wet-chemical surface treatment of a semiconductor wafer has the semiconductor wafer being treated with an acidic liquid, with at most 10 &mgr;m of material being removed from each surface of the semiconductor wafer, and then this wafer is treated with an alkaline liquid, with at least sufficient material being removed for the crystal regions which have been damaged by a previous mechanical treatment to be completely removed.

Abstract: A polished semiconductor wafer has a front surface and a back surface and an edge R, which is located at a distance of a radius from a center of the semiconductor wafer, forms a periphery of the semiconductor wafer and is part of a profiled boundary of the semiconductor wafer. The maximum deviation of the flatness of the back surface from an ideal plane in a range between R-6 mm and R-1 mm of the back surface is 0.7 &mgr;m or less. A process for producing the semiconductor wafer, comprises at least one treatment of the semiconductor wafer with a liquid etchant and at least one polishing of at least a front surface of the semiconductor wafer, the etchant flowing onto a boundary of the semiconductor wafer during the treatment, and the boundary of the semiconductor wafer which faces the flow of etchant being at least partially shielded from being struck directly by the etchant. The shielding extends in the direction of a thickness d of the semiconductor wafer and is at least d+100 &mgr;m long.

Abstract: A process for producing a semiconductor wafer is based upon etching the semiconductor wafer with an etching medium flowing in a laminar flow along a direction of flow toward an edge of the semiconductor wafer. There is a protective shield arranged in front of the edge of the semiconductor wafer, so that the etching medium flows onto the protective shield and not onto the edge of the semiconductor wafer. There is also a process that has the semiconductor wafer being inclined with respect to the direction of flow of the etching medium, so that there is an angle of less than 180° between the direction of flow of the etching medium and a first side of the semiconductor wafer. Also, there is an angle of greater than 180° between the direction of flow of the etching medium and a second side of the semiconductor wafer, and the second side of the semiconductor wafer is subsequently polished.

Abstract: A device and process for the wet-chemical treatment of silicon using an etching liquid that contains water, nitric acid and hydrofluoric acid. The etching liquid is activated by introducing nitrogen oxide (NOx) into the etching liquid, before being used for the wet-chemical treatment of silicon. The device consists of a first vessel in which silicon is subjected to a wet-chemical treatment with the aid of an etching liquid, a second vessel in which fresh etching liquid is held ready, and a connecting line between the first vessel and the second vessel, through which nitrogen oxides (NOx) formed in the first vessel during the wet-chemical treatment are passed to the second vessel.

Abstract: A process for the wet chemical treatment of a semiconductor wafer in a vessel, in which the semiconductor wafer is brought into contact with a liquid in which very small gas bubbles are dispersed. Two circuits are set up for conveying the liquid, with a first circuit between a reservoir and the vessel, for conveying the liquid from the reservoir to the vessel; and with a second circuit from the reservoir back to the reservoir, in order to enrich the liquid with a gas on the way back to the reservoir, so that the gas bubbles can form.

Abstract: A process for the wet-chemical surface treatment of a semiconductor wafer following a mechanical surface treatment, in particular following a mechanical surface treatment in a lapping machine, includes a sequence of treatment steps. The process essentially includes a wet-chemical surface cleaning, preferably for neutralizing and eliminating the lapping slurry, an acid etching treatment, preferably for eliminating the mechanically imposed damage and for surface smoothing and removal of metals. There is a final step of drying and rendering the cleaned and etched surface hydrophilic.

Abstract: A process for producing a semiconductor wafer is based upon etching the semiconductor wafer with an etching medium flowing in a laminar flow along a direction of flow toward an edge of the semiconductor wafer. There is a protective shield arranged in front of the edge of the semiconductor wafer, so that the etching medium flows onto the protective shield and not onto the edge of the semiconductor wafer. There is also a process that has the semiconductor wafer being inclined with respect to the direction of flow of the etching medium, so that there is an angle of less than 180° between the direction of flow of the etching medium and a first side of the semiconductor wafer. Also, there is an angle of greater than 180° between the direction of flow of the etching medium and a second side of the semiconductor wafer, and the second side of the semiconductor wafer is subsequently polished.

Abstract: A process for treating semiconductor material with an acid-containing fluid, has water being formed as a product of a chemical reaction. Before and/or during the treatment of the semiconductor material, phosphorus pentoxide is added to the acid-containing fluid.

Abstract: A process for the wet-chemical treatment of workpieces, especially of semiconductor wafers, includes exposing the workpieces to a flow of a gassified treatment medium generated by homogeneously dispersing gas bubbles in a liquid.

Abstract: A rotary switch, adapted to be secured to a panel, comprises a stator having a bearing flange provided with a cylindrical side wall and an underside; a circumferential groove provided in the side wall and an annular groove provided in the underside; and a rotor extending over the bearing flange and having a cylindrical side wall surrounding the cylindrical side wall of the bearing flange. The rotor is rotatably supported on and relative to the stator. There are further provided a stationary contact mounted in the stator; a movable contact carried by the rotor for displacement relative to the stationary contact upon turning of the rotor; and a first sealing ring received in the circumferential groove and projecting radially outwardly from the cylindrical side wall of the bearing flange. The first sealing ring sealingly and slidably engages the cylindrical side wall of the rotor.

Abstract: A blade ring of high circumferential speed for thermal axially passed through turbines, especially for the last stage of condensing steam turbines, having at least the radially outer portion of its blades lying within the range of transsonic flow or within the range of supersonic flow. Each blade of the blade ring changes from the profile at the foot portion of the blade toward the tip of the blade into a profile defined to a major extent by straight lines or by only slightly curved lines. This profile is about one half of its length at its upper region provided with a slot along the longitudinal axis of the blade. This profile which thus has two sections has one of these sections with its exit edge turned relative to the other section by an angle corresponding to the post-expansion of the supersonic flow into such a direction that the profile part with the exit edge lies in the flow-off direction.

Abstract: A moving blade row of high peripheral speed for thermal axial flow turbo machines, especially for the last stage of condensing steam turbines, the blades of which, when viewed in a radial direction, have their middle and outer regions located in the range of transonic flow. The blade section in the middle range or in the middle and outer regions starting from the trailing edge is formed by two straight lines. The straight line at the suction surface side joins the steadily curved curve of the remaining suction surface side without any distinctive bend, whereas the straight line at the pressure surface side near the trailing edge of the blade joins the steadily curved curve of the remaining pressure surface side with a distinctive bend or discontinuity.