Patents by Inventor Gunther Roelkens
Gunther Roelkens has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11896373Abstract: A spectroscopic laser sensor based on hybrid lll-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a lll-V gain-chip, e.g., an AIGalnAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AIGal-nAsSb/GaSb based photodetectors and embedded electronics for signal processing.Type: GrantFiled: May 21, 2018Date of Patent: February 13, 2024Assignee: Brolis Sensor Technology, UABInventors: Augustinas Vizbaras, Kristijonas Vizbaras, Ieva Simonyte, Günther Roelkens
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Patent number: 11815452Abstract: A gas sensor device (100) is configured to measure a predetermined gas of interest and comprises an enclosure (101) comprising a semiconductor substrate (102) and defining a first cavity (124), an optically transmissive second closed cavity (126) and a third cavity (128). The second cavity (126) is interposed between the first and third cavities (124, 128). The first cavity (124) comprises an inlet port (130) for receiving a gas under test, an outlet port (132) for venting the gas under test. The first cavity (124) also comprises an optical source (112) and a measurement sensor (114). The second cavity (126) is configured as a gaseous filter comprising a volume of the gas of interest sealingly disposed in the second cavity (126), and the third cavity (128) comprises a reference measurement sensor (116) disposed therein.Type: GrantFiled: October 7, 2020Date of Patent: November 14, 2023Assignee: MELEXIS TECHNOLOGIES NVInventors: Wouter Leten, Joris Roels, Xiaoning Jia, Roeland Baets, Gunther Roelkens
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Patent number: 11696707Abstract: A spectroscopic laser sensor based on hybrid III-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a III-V gain-chip, e.g., an AlGaInAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AlGa1-nAsSb/GaSb based photodetectors and embedded electronics for signal processing.Type: GrantFiled: August 15, 2022Date of Patent: July 11, 2023Assignee: Brolis Sensor Technology, UAB et al.Inventors: Augustinas Vizbaras, Kristijonas Vizbaras, Ieva Simonyte, Günther Roelkens
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Publication number: 20230047997Abstract: A spectroscopic laser sensor based on hybrid lll-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a lll-V gain-chip, e.g., an AIGalnAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AIGalnAsSb/GaSb based photodetectors and embedded electronics for signal processing.Type: ApplicationFiled: August 15, 2022Publication date: February 16, 2023Inventors: Augustinas Vizbaras, Kristijonas Vizbaras, Ieva Simonyte, Günther Roelkens
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Publication number: 20230036048Abstract: A spectroscopic laser sensor based on hybrid III-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a III-V gain-chip, e.g., an AIGalnAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AIGal-nAsSb/GaSb based photodetectors and embedded electronics for signal processing.Type: ApplicationFiled: August 15, 2022Publication date: February 2, 2023Inventors: Augustinas Vizbaras, Kristijonas Vizbaras, Ieva Simonyte, Günther Roelkens
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Patent number: 11298057Abstract: A spectroscopic laser sensor based on hybrid III-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a III-V gain-chip, e.g., an AlGaInAsSb/GaSb based gain-chip and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AlGaInAsSb/GaSb based photodetectors and embedded electronics for signal processing.Type: GrantFiled: July 7, 2021Date of Patent: April 12, 2022Assignees: Brolis Sensor Technology, UAB, Universiteit Gent, IMEC VZWInventors: Augustinas Vizbaras, Kristijonas Vizbaras, Ieva {hacek over (S)}imonytė, Günther Roelkens
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Publication number: 20210353183Abstract: A spectroscopic laser sensor based on hybrid III-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a III-V gain-chip, e.g., an AlGaInAsSb/GaSb based gain-chip and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AlGaInAsSb/GaSb based photodetectors and embedded electronics for signal processing.Type: ApplicationFiled: July 7, 2021Publication date: November 18, 2021Inventors: Augustinas Vizbaras, Kristijonas Vizbaras, Ieva Simonyte, Günther Roelkens
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Publication number: 20210109017Abstract: A gas sensor device (100) is configured to measure a predetermined gas of interest and comprises an enclosure (101) comprising a semiconductor substrate (102) and defining a first cavity (124), an optically transmissive second closed cavity (126) and a third cavity (128). The second cavity (126) is interposed between the first and third cavities (124, 128). The first cavity (124) comprises an inlet port (130) for receiving a gas under test, an outlet port (132) for venting the gas under test. The first cavity (124) also comprises an optical source (112) and a measurement sensor (114). The second cavity (126) is configured as a gaseous filter comprising a volume of the gas of interest sealingly disposed in the second cavity (126), and the third cavity (128) comprises a reference measurement sensor (116) disposed therein.Type: ApplicationFiled: October 7, 2020Publication date: April 15, 2021Applicant: Melexis Technologies NVInventors: Wouter LETEN, Joris ROELS, Xiaoning JIA, Roeland BAETS, Gunther ROELKENS
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Patent number: 10847673Abstract: The disclosure is related to a method for producing at least one semiconductor component coupled to a target substrate, where a coupon comprising one or more constituent layers of the at least one semiconductor component is transferred to the target substrate by transfer printing. The coupon is embedded in a portion of a support layer thereby forming an enlarged coupon provided with solid alignment markers on the underside thereof. Corresponding hollow alignment markers exist on the location of the target substrate where the coupon is to be placed. The alignment markers engage to thereby align the coupon to the target location. The disclosure is equally related to a device assembly obtainable by the method.Type: GrantFiled: April 1, 2019Date of Patent: November 24, 2020Assignees: IMEC VZW, UNIVERSITEIT GENTInventor: Gunther Roelkens
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Publication number: 20200069225Abstract: A spectroscopic laser sensor based on hybrid lll-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a lll-V gain-chip, e.g., an AIGalnAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AIGal-nAsSb/GaSb based photodetectors and embedded electronics for signal processing.Type: ApplicationFiled: May 21, 2018Publication date: March 5, 2020Inventors: Augustinas Vizbaras, Kristijonas Vizbaras, leva Simonyte, Günther Roelkens
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Publication number: 20190305179Abstract: The disclosure is related to a method for producing at least one semiconductor component coupled to a target substrate, where a coupon comprising one or more constituent layers of the at least one semiconductor component is transferred to the target substrate by transfer printing. The coupon is embedded in a portion of a support layer thereby forming an enlarged coupon provided with solid alignment markers on the underside thereof. Corresponding hollow alignment markers exist on the location of the target substrate where the coupon is to be placed. The alignment markers engage to thereby align the coupon to the target location. The disclosure is equally related to a device assembly obtainable by the method.Type: ApplicationFiled: April 1, 2019Publication date: October 3, 2019Inventor: Gunther Roelkens
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Patent number: 10338313Abstract: An on-chip broadband radiation source, and methods for its manufacture such that a photonics IC comprises an optical waveguide such as a semiconductor waveguide, a thin III-V material membrane with absorption capability for absorbing an optical pump signal induced in the waveguide. The III-V membrane comprises a LED implemented therein. The photonics IC also comprises a coupling means between the waveguide and the membrane. The device provides a broadband radiation source at a wavelength longer than the wavelength of the transferred radiation. The broadband signal can then be coupled out through the waveguide and used in the chip.Type: GrantFiled: August 22, 2016Date of Patent: July 2, 2019Assignees: UNIVERSITEIT GENT, IMEC VZWInventors: Roeland Baets, Günther Roelkens, Andreas De Groote, Paolo Cardile, Ananth Subramanian
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Publication number: 20180239089Abstract: An on-chip broadband radiation source, and methods for its manufacture such that a photonics IC comprises an optical waveguide such as a semiconductor waveguide, a thin III-V material membrane with absorption capability for absorbing an optical pump signal induced in the waveguide. The III-V membrane comprises a LED implemented therein. The photonics IC also comprises a coupling means between the waveguide and the membrane. The device provides a broadband radiation source at a wavelength longer than the wavelength of the transferred radiation. The broadband signal can then be coupled out through the waveguide and used in the chip.Type: ApplicationFiled: August 22, 2016Publication date: August 23, 2018Inventors: Roeland BAETS, Günther ROELKENS, Andreas DE GROOTE, Paolo CARDILE, Ananth SUBRAMANIAN
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Patent number: 10036625Abstract: An integrated waveguide based spectrometer is described. The spectrometer comprises a sensing region for receiving multi-wavelength radiation for irradiating a sample in the sensing region, a wavelength demultiplexing element arranged for capturing said multi-wavelength radiation after interaction with the sample and for providing a number of wavelength demultiplexed radiation outputs or a number of different groups of wavelength demultiplexed radiation outputs, an integrated modulator for differently modulating the different demultiplexed radiation outputs or different groups of demultiplexed radiation outputs, and a multiplexer element for multiplexing the differently modulated demultiplexed radiation outputs or the differently grouped demultiplexed radiation outputs.Type: GrantFiled: April 23, 2015Date of Patent: July 31, 2018Assignees: UNIVERSITEIT GENT, IMEC VZWInventors: Roeland Baets, Danaë Delbeke, Günther Roelkens, Wim Bogaerts
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Patent number: 9810846Abstract: Disclosed are optical devices for coupling radiation between an optical waveguide and an external medium. In one embodiment, an optical device is disclosed comprising a semiconductor die comprising an integrated optical waveguide core and an overlying optical waveguide comprising a waveguide taper and a waveguide facet. The overlying optical waveguide at least partially overlies the integrated optical waveguide core, and the waveguide facet is between about 1 ?m and 200 ?m from an edge of the semiconductor die. In another embodiment, a method is disclosed comprising providing a substrate comprising an integrated semiconductor waveguide and forming on the substrate an overlying waveguide comprising a waveguide taper and a waveguide facet. The overlying waveguide at least partially overlies the integrated semiconductor waveguide. The method further includes cutting the substrate about 1 ?m and 200 ?m from the waveguide facet.Type: GrantFiled: October 14, 2011Date of Patent: November 7, 2017Assignee: Huawei Technologies Co., Ltd.Inventors: Dirk Taillaert, Diederik Vermeulen, Jonathan Schrauwen, Gunther Roelkens
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Patent number: 9772447Abstract: A method of producing a heterogeneous photonic integrated circuit includes integrating at least one III-V hybrid device on a source substrate having at least a top silicon layer, and transferring by transfer-printing or by flip-chip bonding the III-V hybrid device and at least part of the top silicon layer of the source substrate to a semiconductor-on-insulator or dielectric-on-insulator host substrate.Type: GrantFiled: May 6, 2016Date of Patent: September 26, 2017Assignees: IMEC VZW, Universiteit GentInventors: Shahram Keyvaninia, Dries Van Thourhout, Gunther Roelkens
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Publication number: 20170082421Abstract: An integrated waveguide based spectrometer is described. The spectrometer comprises a sensing region for receiving multi-wavelength radiation for irradiating a sample in the sensing region, a wavelength demultiplexing element arranged for capturing said multi-wavelength radiation after interaction with the sample and for providing a number of wavelength demultiplexed radiation outputs or a number of different groups of wavelength demultiplexed radiation outputs, an integrated modulator for differently modulating the different demultiplexed radiation outputs or different groups of demultiplexed radiation outputs, and a multiplexer element for multiplexing the differently modulated demultiplexed radiation outputs or the differently grouped demultiplexed radiation outputs.Type: ApplicationFiled: April 23, 2015Publication date: March 23, 2017Inventors: Roeland BAETS, Danaë DELBEKE, Günther ROELKENS, Wim BOGAERTS
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Patent number: 9529154Abstract: The present disclosure generally relates to a method of optically coupling a photonic integrated circuit and an external optical component.Type: GrantFiled: March 20, 2015Date of Patent: December 27, 2016Assignees: IMEC VZW, Universiteit GentInventors: Geert Van Steenberge, Dries Van Thourhout, Günther Roelkens
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Publication number: 20160327759Abstract: A method of producing a heterogeneous photonic integrated circuit includes integrating at least one III-V hybrid device on a source substrate having at least a top silicon layer, and transferring by transfer-printing or by flip-chip bonding the III-V hybrid device and at least part of the top silicon layer of the source substrate to a semiconductor-on-insulator or dielectric-on-insulator host substrate.Type: ApplicationFiled: May 6, 2016Publication date: November 10, 2016Applicants: IMEC VZW, Universiteit GentInventors: Shahram Keyvaninia, Dries Van Thourhout, Gunther Roelkens
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Patent number: 9472705Abstract: An integrated avalanche photodetector and a method for fabrication thereof. The integrated avalanche photodetector comprises a Ge body adapted to conduct an optical mode. The Ge body comprises a first p-doped region that extends from a first main surface to a second main surface of the Ge body. The Ge body further comprises a first n-doped region that extends from the first main surface towards the second main surface of the Ge body. An intrinsic region occupies the undoped part of the Ge body. A first avalanche junction is formed by the first n-doped region that is located aside the p-doped region. The Ge body further comprises an incidence surface, suitable for receiving an optical mode, and a second n-doped Ge region that covers the Ge body and forms a second avalanche junction with the first p-doped region at the first main surface.Type: GrantFiled: December 23, 2015Date of Patent: October 18, 2016Assignees: IMEC VZW, Universiteit GentInventors: Hongtao Chen, Joris Van Campenhout, Gunther Roelkens