Patents by Inventor Guoxuan Qin

Guoxuan Qin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-speed, flexible integrated circuits and methods for making high-speed, flexible integrated circuits
    Patent number: 11109486
    Abstract: The present invention provides flexible devices, such as integrated circuits, having a multilevel electronic device structure including two or more electronic components. The electronic components within the structure are electrically connected by an interconnect structure having multiple interconnect levels. In addition to the multilevel electronic device structure, the flexible devices include an elastomeric material disposed around the interconnect levels, including within the spaces between the interconnect levels.
    Type: Grant
    Filed: October 21, 2019
    Date of Patent: August 31, 2021
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Zhenqiang Ma, Guoxuan Qin, Namki Cho
  • HIGH-SPEED, FLEXIBLE INTEGRATED CIRCUITS AND METHODS FOR MAKING HIGH-SPEED, FLEXIBLE INTEGRATED CIRCUITS
    Publication number: 20200084891
    Abstract: The present invention provides flexible devices, such as integrated circuits, having a multilevel electronic device structure including two or more electronic components. The electronic components within the structure are electrically connected by an interconnect structure having multiple interconnect levels. In addition to the multilevel electronic device structure, the flexible devices include an elastomeric material disposed around the interconnect levels, including within the spaces between the interconnect levels.
    Type: Application
    Filed: October 21, 2019
    Publication date: March 12, 2020
    Inventors: Zhenqiang Ma, Guoxuan Qin, Namki Cho
  • HIGH-SPEED, FLEXIBLE INTEGRATED CIRCUITS AND METHODS FOR MAKING HIGH-SPEED, FLEXIBLE INTEGRATED CIRCUITS
    Publication number: 20130229776
    Abstract: The present invention provides flexible devices, such as integrated circuits, having a multilevel electronic device structure including two or more electronic components. The electronic components within the structure are electrically connected by an interconnect structure having multiple interconnect levels. In addition to the multilevel electronic device structure, the flexible devices include an elastomeric material disposed around the interconnect levels, including within the spaces between the interconnect levels.
    Type: Application
    Filed: December 21, 2012
    Publication date: September 5, 2013
    Applicant: Wisconsin Alumni Research Foundation
    Inventors: Zhenqiang Ma, Guoxuan Qin, Namki Cho
  • High-power common-base amplifier employing current source output bias
    Patent number: 7830208
    Abstract: A common-base amplifier for a bipolar junction transistor or a heterojunction bipolar transistor employs an active current source output biasing to provide for improved power output in a power saturation region providing increased power for a given transistor area such as may be advantageous in mobile radio transmitters or the like.
    Type: Grant
    Filed: September 18, 2008
    Date of Patent: November 9, 2010
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Zhenqiang Ma, Guogong Wang, Guoxuan Qin
  • HIGH-POWER COMMON-BASE AMPLIFIER EMPLOYING CURRENT SOURCE OUTPUT BIAS
    Publication number: 20100066454
    Abstract: A common-base amplifier for a bipolar junction transistor or a heterojunction bipolar transistor employs an active current source output biasing to provide for improved power output in a power saturation region providing increased power for a given transistor area such as may be advantageous in mobile radio transmitters or the like.
    Type: Application
    Filed: September 18, 2008
    Publication date: March 18, 2010
    Inventors: Zhenqiang Ma, Guogong Wang, Guoxuan Qin