Abstract: A method for depositing a coating of a nanostructure material onto a substrate includes: (1) forming a solution or suspension of containing the nanostructure material; (2) selectively adding “chargers” to the solution; (3) immersing electrodes in the solution, the substrate upon which the nanostructure material is to be deposited acting as one of the electrodes; (4) applying a direct and/or alternating current electrical field between the two electrodes for a certain period of time thereby causing the nanostructure materials in the solution to migrate toward and attach themselves to the substrate electrode; and (5) subsequent optional processing of the coated substrate.

Abstract: A method for attaching nanostructure-containing material onto a sharp tip of an object includes forming a suspension of pre-formed nanostructure-containing material in a liquid medium. An electrode is immersed in the suspension. The sharp tip of the object is arranged to be in contact with the suspension. A voltage is applied to the immersed electrode and to the sharp tip. The nanostructure-containing material attaches to the sharp tip of the object.

Abstract: A thin film, hydrogenated, silicon based semiconductor alloy material is produced by a VHF energized plasma deposition process wherein a process gas is decomposed in a plasma so as to deposit the thin film material onto a substrate. The process is carried out at process gas pressures which are in the range of 0.5-2.0 torr, with substrate temperatures that do not exceed 300° C., and substrate-cathode spacings in the range of 10-50 millimeters. Deposition rates are at least 5 angstroms per second. Also disclosed are photovoltaic devices which include the semiconductor material.

Abstract: A VHF energized plasma deposition process wherein a process gas is decomposed in a plasma so as to deposit the thin film material onto a substrate, is carried out at process gas pressures which are in the range of 0.5-2.0 torr, with substrate temperatures that do not exceed 300° C., and substrate-cathode spacings in the range of 10-50 millimeters. Deposition rates are at least 5 angstroms per second. The present method provides for the high speed deposition of semiconductor materials having a quality at least equivalent to materials produced at a much lower deposition rate.

Abstract: A method of depositing a coating of a nanostructure material onto a substrate includes: (1) forming a solution of suspension of coating the nanostructure material; (2) selectively adding “chargers” to the solution; (3) immersing electrodes in the solution, the substrate upon which the nanostructure material is to be deposited acting as one of the electrodes; (4) applying a direct and/or alternating current electrical field between the two electrodes for a certain period of time thereby causing the nanostructure materials in the solution to migrate toward and attach themselves to the substrate electrode; and (5) subsequent optional processing of the coated substrate.

Abstract: A method for depositing a coating of a nanostructure material onto a substrate includes: (1) forming a solution or suspension of containing the nanostructure material; (2) selectively adding “chargers” to the solution; (3) immersing electrodes in the solution, the substrate upon which the nanostructure material is to be deposited acting as one of the electrodes; (4) applying a direct and/or alternating current electrical field between the two electrodes for a certain period of time thereby causing the nanostructure materials in the solution to migrate toward and attach themselves to the substrate electrode; and (5) subsequent optional processing of the coated substrate.

Abstract: A semiconductor device of p-i-n type configuration includes a p layer which is comprised of a p-doped semiconductor material, an n layer comprised of an n-doped semiconductor material and an i layer comprised of a substantially intrinsic, nanocrystalline semiconductor material interposed therebetween. The crystalline volume in the i layer decreases as the thickness of said layer increases from its interface with the n layer to its interface with the p layer. The grain size of the substantially intrinsic nanocrystalline semiconductor material may also decrease as the thickness of the i layer increases from its interface with the n layer to its interface with the p layer. The volume of regions of intermediate range order in a portion of the i layer commencing at the interface of the i layer and the p layer, and comprising no more than 50% of the thickness thereof, is greater than is the volume of regions of intermediate range order in the remainder of the i layer.

Abstract: A method for depositing a coating of a nanostructure material onto a substrate includes: (1) forming a solution or suspension of containing the nanostructure material; (2) selectively adding “chargers” to the solution; (3) immersing electrodes in the solution, the substrate upon which the nanostructure material is to be deposited acting as one of the electrodes; (4) applying a direct and/or alternating current electrical field between the two electrodes for a certain period of time thereby causing the nanostructure materials in the solution to migrate toward and attach themselves to the substrate electrode; and (5) subsequent optional processing of the coated substrate.

Abstract: A method for attaching nanostructure-containing material onto a sharp tip of an object includes forming a suspension of pre-formed nanostructure-containing material in a liquid medium. An electrode is immersed in the suspension. The sharp tip of the object is arranged to be in contact with the suspension. A voltage is applied to the immersed electrode and to the sharp tip. The nanostructure-containing material attaches to the sharp tip of the object.

Abstract: A method for depositing a coating of a nanostructure material onto a substrate includes: (1) forming a solution or suspension of containing the nanostructure material; (2) selectively adding “chargers” to the solution; (3) immersing electrodes in the solution, the substrate upon which the nanostructure material is to be deposited acting as one of the electrodes; (4) applying a direct and/or alternating current electrical field between the two electrodes for a certain period of time thereby causing the nanostructure materials in the solution to migrate toward and attach themselves to the substrate electrode; and (5) subsequent optional processing of the coated substrate.