Abstract: A semiconductor device is constructed of at least one indium nitride or indium nitride alloy nanostructure on a substrate or other thing film layer. The method used to create the semiconductor device involves illuminating the substrate with a lateral intensity patterning of ultraviolet light in the presence of at least hydrazoic acid and a compound containing indium gas flows. Additionally, a semiconductor light-emitting/detecting modulating device composed of at least one indium nitride or indium nitride alloy nanostructure. The method used to create the semiconductor light-emitting/detecting modulating device involves embedding at least one nanostructure in the interior layer of the device. Further, a monolithic photovoltaic-photoelectrochemical device where one layer is composed of an indium nitride or indium nitride alloy film or nanostructure.

Abstract: During a surgical procedure being performed on a patient in the prone (face down) position, the patient's head and face are supported by a facial support mask having two or more contoured cushions that are independently inflatable and deflatable with respect to each other. The inflatable cushions are sequentially pressurized and depressurized, thus providing continuous, soft support for the patient's head, while alternatively relieving compression forces applied to pressure-sensitive facial areas. Alternately pressurizing and depressurizing the inflatable cushions shifts the location of compressive forces, thus relieving compressed tissues and permitting recovery of normal blood circulation in sensitive facial tissues. The patient's head, neck and face are not disturbed while the support cushions are cycled through various pressurization and depressurization states.