Patents by Inventor Guy M. Cohen

Guy M. Cohen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TOUCH SCREEN DEVICE FACILITATING ESTIMATION OF ENTITY ORIENTATION AND IDENTITY
    Publication number: 20200174596
    Abstract: Devices, systems, computer-implemented methods, and computer program products that can facilitate estimating orientation and/or identity of an entity that touches a touch screen device are provided. According to an embodiment, a device can comprise a pixelated touch screen that provides a two-dimensional capacitance map in response to detection of one or more entities touching the pixelated touch screen. Capacitance data of the two-dimensional capacitance map is inversely proportional to a distance between fingers of the one or more entities and the pixelated touch screen. The device can further comprise a processor that applies an analytic method to the two-dimensional capacitance map to estimate orientation or identity of the one or more entities.
    Type: Application
    Filed: November 29, 2018
    Publication date: June 4, 2020
    Inventors: Guy M. Cohen, Lior Horesh, Raya Horesh
  • ELECTROCHEMICAL SENSORS FOR CELL CULTURE MONITORING
    Publication number: 20200172851
    Abstract: A device for monitoring a cell culture includes one or more electrochemical sensors configured to be positioned adjacent to or embedded within a medium of a cell culture. The one or more electrochemical sensors are configured to generate signals in accordance with the cell culture. A data storage device is configured to receive and store the signals from the one or more electrochemical sensors. A computation device is configured to analyze the signals from the one or more electrochemical sensors to determine cell activity over time using sensitivity information.
    Type: Application
    Filed: February 3, 2020
    Publication date: June 4, 2020
    Inventors: Amos Cahan, Guy M. Cohen, Theodore G. van Kessel, Sufi Zafar
  • P-N JUNCTION BASED DEVICES WITH SINGLE SPECIES IMPURITY FOR P-TYPE AND N-TYPE DOPING
    Publication number: 20200161436
    Abstract: A technique relates to a semiconductor device. A bipolar transistor includes an emitter layer and a base layer, where the emitter layer and the base layer are doped with an impurity, the impurity being a same for the emitter and base layers. The bipolar transistor includes a collector layer.
    Type: Application
    Filed: January 23, 2020
    Publication date: May 21, 2020
    Inventors: Guy M. Cohen, Paul M. Solomon, Christian Lavoie
  • SYMMETRIC TUNABLE PCM RESISTOR FOR ARTIFICIAL INTELLIGENCE CIRCUITS
    Publication number: 20200161545
    Abstract: A method of tuning a PCM device is disclosed. The method includes receiving a command and determining if the command is a SET command or a RESET command. When the command is a RESET command, the method provides a short pulse across a resistive electrode and a top electrode through a phase change material generating amorphous PCM at the point of highest voltage across the PCM region.
    Type: Application
    Filed: January 22, 2020
    Publication date: May 21, 2020
    Inventors: Guy M. Cohen, Paul M. Solomon
  • DEVICE ISOLATION USING PREFERENTIAL OXIDATION OF THE BULK SUBSTRATE
    Publication number: 20200144375
    Abstract: A structure includes a semiconductor substrate, a buffer layer disposed over the semiconductor substrate, an oxide layer disposed over the buffer layer, and a fin including a semiconductor material disposed over the oxide layer.
    Type: Application
    Filed: January 3, 2020
    Publication date: May 7, 2020
    Inventors: Anirban Basu, Guy M. Cohen, Amlan Majumdar, Yu Zhu
  • Electrochemical sensors for cell culture monitoring
    Patent number: 10611994
    Abstract: A device for monitoring a cell culture includes one or more electrochemical sensors configured to be positioned adjacent to or embedded within a medium of a cell culture. The one or more electrochemical sensors are configured to generate signals in accordance with the cell culture. A data storage device is configured to receive and store the signals from the one or more electrochemical sensors. A computation device is configured to analyze the signals from the one or more electrochemical sensors to determine cell activity over time using sensitivity information.
    Type: Grant
    Filed: August 30, 2016
    Date of Patent: April 7, 2020
    Assignee: International Business Machines Corporation
    Inventors: Amos Cahan, Guy M. Cohen, Theodore G. van Kessel, Sufi Zafar
  • P-N junction based devices with single species impurity for P-type and N-type doping
    Patent number: 10615261
    Abstract: A technique relates to a semiconductor device. A bipolar transistor includes an emitter layer and a base layer, where the emitter layer and the base layer are doped with an impurity, the impurity being a same for the emitter and base layers. The bipolar transistor includes a collector layer.
    Type: Grant
    Filed: May 21, 2019
    Date of Patent: April 7, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Guy M. Cohen, Paul M. Solomon, Christian Lavoie
  • Symmetric tunable PCM resistor for artificial intelligence circuits
    Patent number: 10586922
    Abstract: A phase change material (PCM) device is disclosed. The PCM device includes a bottom electrode and an insulator layer over the bottom electrode. The PCM device further includes a resistive electrode over the insulator layer with a via in the insulator layer between one end of the resistive electrode and the bottom electrode. The PCM device further includes a PCM region over the resistive electrode and a top electrode over the PCM region.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: March 10, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Guy M. Cohen, Paul M. Solomon
  • CELL CULTURING STRUCTURE INCLUDING GROWTH MEDIUM AND NON-GROWTH MEDIUM
    Publication number: 20200071739
    Abstract: A structure for culturing cells includes growth medium regions on a surface of the structure. Each of the growth medium regions includes a growth medium surface configured to receive and promote growth in a cell that is being cultured. The structure includes a non-growth medium. The non-growth medium includes a non-growth medium surface configured to receive the cell that is being cultured.
    Type: Application
    Filed: November 6, 2019
    Publication date: March 5, 2020
    Inventors: Amos Cahan, Guy M. Cohen, Theodore G. van Kessel, Sufi Zafar
  • SYMMETRIC TUNABLE PCM RESISTOR FOR ARTIFICIAL INTELLIGENCE CIRCUITS
    Publication number: 20200066980
    Abstract: A phase change material (PCM) device is disclosed. The PCM device includes a bottom electrode and an insulator layer over the bottom electrode. The PCM device further includes a resistive electrode over the insulator layer with a via in the insulator layer between one end of the resistive electrode and the bottom electrode. The PCM device further includes a PCM region over the resistive electrode and a top electrode over the PCM region.
    Type: Application
    Filed: August 21, 2018
    Publication date: February 27, 2020
    Inventors: Guy M. Cohen, Paul M. Solomon
  • ULTRA-SONIC SELF-CLEANING SYSTEM
    Publication number: 20200064624
    Abstract: Methods and systems for cleaning an optic include cleaning an optic with ultrasonic vibrations. The locations of nodes in a standing wave of the ultrasonic vibrations are changed by changing a frequency of vibration during cleaning.
    Type: Application
    Filed: November 1, 2019
    Publication date: February 27, 2020
    Inventors: Guy M. Cohen, Lior Horesh, Raya Horesh, Theodore G. van Kessel, Robert L. Wisnieff
  • Device isolation using preferential oxidation of the bulk substrate
    Patent number: 10559666
    Abstract: A structure includes a semiconductor substrate, a semiconductor buffer layer disposed over the semiconductor substrate, an oxide layer disposed over the buffer layer, and a fin including a semiconductor material disposed over the oxide layer. The semiconductor material has an oxidation rate different from an oxidation rate of the buffer layer.
    Type: Grant
    Filed: January 15, 2019
    Date of Patent: February 11, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Anirban Basu, Guy M. Cohen, Amlan Majumdar, Yu Zhu
  • P-N JUNCTION BASED DEVICES WITH SINGLE SPECIES IMPURITY FOR P-TYPE AND N-TYPE DOPING
    Publication number: 20200035793
    Abstract: A technique relates to a semiconductor device. A bipolar transistor includes an emitter layer and a base layer, where the emitter layer and the base layer are doped with an impurity, the impurity being a same for the emitter and base layers. The bipolar transistor includes a collector layer.
    Type: Application
    Filed: May 21, 2019
    Publication date: January 30, 2020
    Inventors: Guy M. Cohen, Paul M. Solomon, Christian Lavoie
  • Ultra-sonic self-cleaning system
    Patent number: 10527843
    Abstract: Methods and systems for cleaning an optic include measuring a state of the optic. It is determined whether the optic needs to be cleaned based on the measured state of the optic. The optic is cleaned with ultrasonic vibrations if the optic needs to be cleaned.
    Type: Grant
    Filed: May 12, 2017
    Date of Patent: January 7, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Guy M. Cohen, Lior Horesh, Raya Horesh, Theodore G. van Kessel, Robert L. Wisnieff
  • Charge carrier transport facilitated by strain
    Patent number: 10529855
    Abstract: A semiconductor structure and formation thereof. The semiconductor structure has a first semiconductor layer with a first lattice structure and a second epitaxial semiconductor layer that is lattice-matched with the first semiconductor layer. At least two source/drain regions, which have a second lattice structure, penetrate the second semiconductor layer and contact the first semiconductor layer. A portion of the second semiconductor layer is between the source/drain regions and has a degree of uniaxial strain that is based, at least in part, on a difference between the first lattice structure and the second lattice structure.
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: January 7, 2020
    Assignee: International Business Machines Corporation
    Inventors: Anirban Basu, Guy M. Cohen
  • Ultra-sonic self-cleaning system
    Patent number: 10520723
    Abstract: Methods and systems for cleaning an optic include measuring a state of the optic. It is determined whether the optic needs to be cleaned based on the measured state of the optic. The optic is cleaned with ultrasonic vibrations if the optic needs to be cleaned.
    Type: Grant
    Filed: November 8, 2017
    Date of Patent: December 31, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Guy M. Cohen, Lior Horesh, Raya Horesh, Theodore G. van Kessel, Robert L. Wisnieff
  • Low Cost Container Condition Monitor
    Publication number: 20190383671
    Abstract: Low-cost techniques for sensing ambient temperatures in a container or package using phase change materials are provided. In one aspect, a temperature sensor is provided. The temperature sensor includes: at least one phase change material configured to transition from an amorphous state to a crystalline state upon exposure to temperatures above a predetermined threshold temperature for a given duration. A method of monitoring temperature exposure of a consumer good using the temperature sensor is also provided.
    Type: Application
    Filed: August 30, 2019
    Publication date: December 19, 2019
    Inventors: Amos Cahan, Guy M. Cohen, Lior Horesh, Raya Horesh
  • CHARGE CARRIER TRANSPORT FACILITATED BY STRAIN
    Publication number: 20190378929
    Abstract: A semiconductor structure and formation thereof. The semiconductor structure has a semiconductor channel region composed of a first semiconductor material that (i) is epitaxial with and (ii) is lattice-matched with a second semiconductor material. The semiconductor structure has, at a first end of the semiconductor channel region, a first source/drain region composed of a third semiconductor material that is lattice-mismatched to both the first semiconductor material and the second semiconductor material.
    Type: Application
    Filed: August 19, 2019
    Publication date: December 12, 2019
    Inventors: Anirban Basu, Guy M. Cohen
  • Low cost container condition monitor
    Patent number: 10436651
    Abstract: Low-cost techniques for sensing ambient temperatures in a container or package using phase change materials are provided. In one aspect, a temperature sensor is provided. The temperature sensor includes: at least one phase change material configured to transition from an amorphous state to a crystalline state upon exposure to temperatures above a predetermined threshold temperature for a given duration. A method of monitoring temperature exposure of a consumer good using the temperature sensor is also provided.
    Type: Grant
    Filed: September 21, 2016
    Date of Patent: October 8, 2019
    Assignee: International Business Machines Corporation
    Inventors: Amos Cahan, Guy M. Cohen, Lior Horesh, Raya Horesh
  • P-N junction based devices with single species impurity for P-type and N-type doping
    Patent number: 10411101
    Abstract: A technique relates to a semiconductor device. A bipolar transistor includes an emitter layer and a base layer, where the emitter layer and the base layer are doped with an impurity, the impurity being a same for the emitter and base layers. The bipolar transistor includes a collector layer.
    Type: Grant
    Filed: July 30, 2018
    Date of Patent: September 10, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Guy M. Cohen, Paul M. Solomon, Christian Lavoie