Patents by Inventor Guy-Michel Parat

Guy-Michel Parat has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200240953
    Abstract: A chemical sensor including at least one resonant detection structure, the detection structure including at least one layer based on a porous material, the pores of which are covered with at least one functionalization layer that can adsorb or absorb at least one chemical species.
    Type: Application
    Filed: July 25, 2017
    Publication date: July 30, 2020
    Inventors: Thierry CLARET, Fredeic BOTTAUSCI, Guy-Michel PARAT, Severine VIGNOUD
  • Patent number: 9768518
    Abstract: A microelectronic wireless transmission device including: a substrate able to be traversed by radio waves intended to be emitted by the device, an antenna, an electrical power supply, an integrated circuit, electrically connected to the antenna and to the electrical power supply, and able to transmit to the antenna electrical signals intended to be emitted by the antenna in the form of the said radio waves, a cap rigidly connected to the substrate and forming, with the substrate, at least one cavity in which the antenna and the integrated circuit are positioned, where the cap comprises an electrically conductive material connected electrically to an electrical potential of the electrical power supply and/or of the integrated circuit, and able to form a reflector with regard to the radio waves intended to be emitted by the antenna.
    Type: Grant
    Filed: April 23, 2013
    Date of Patent: September 19, 2017
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Jean-Charles Souriau, Leaticia Castagne, Guy-Michel Parat
  • Patent number: 9230923
    Abstract: An electronic chip is provided, including an electronic circuit located at a front face of a substrate; a capacitive element placed at a back face of the substrate and facing the electronic circuit, and electrically connected to the electronic circuit by a first electrical connection and a second electrical connection, the first electrical connection including at least a first electrically conducting via passing through the substrate, the electronic circuit being configured to measure a value of electrical capacitance of the capacitive element between the first and the second electrical connections; and a plurality of second vias or trenches passing through the back face of the substrate and a part of the thickness of the substrate, and extending toward the electronic circuit such that bottom walls of the plurality of second vias or trenches are separated from the electronic circuit by at least one non-zero distance.
    Type: Grant
    Filed: October 9, 2014
    Date of Patent: January 5, 2016
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Yann Lamy, Alain Merle, Guy-Michel Parat, Assia Tria
  • Publication number: 20150108606
    Abstract: Electronic chip comprising: an electronic circuit located at a front face of a substrate; a capacitive element placed at a back face of the substrate and facing the electronic circuit, and electrically connected to the electronic circuit by a first electrical connection and a second electrical connection, the first electrical connection including at least a first electrically conducting via passing through the substrate, the electronic circuit being capable of measuring the value of the electrical capacitance of the capacitive element between the first and the second electronic connections, and at least one second via or a trench passing through the back face of the substrate and a part of the thickness of the substrate, and facing the electronic circuit such that a bottom wall of the second via or of the trench are separated from the electronic circuit by a non-zero distance.
    Type: Application
    Filed: October 9, 2014
    Publication date: April 23, 2015
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventors: Yann Lamy, Alain Merle, Guy-Michel Parat, Assia Tria
  • Patent number: 8853845
    Abstract: A component including at least one active element hermetically encapsulated in a cavity formed between a support and a cover, in which the support and the cover are made from an electrically conductive material, and are insulated electrically from one another, and include a first electrical connection between the active element and the support, and a second electrical connection, separate from the first connection, between the active element and the cover, and in which: the active element is securely attached to the support through a dielectric layer positioned between the support and the active element, and between the support and the cover; the second electrical connection includes a second portion of electrically conductive material electrically connected to the cover, positioned on the dielectric layer and electrically in contact with an electrically conductive sealing bead providing hermetic secure attachment of the cover to the support.
    Type: Grant
    Filed: March 18, 2013
    Date of Patent: October 7, 2014
    Assignees: Commissariat a l'energie atomique et aux energies alternatives, Sorin CRM S.A.S.
    Inventors: Jean-Charles Souriau, Guy-Michel Parat, Renzo Dal Molin
  • Patent number: 8801274
    Abstract: A transducer for transducing time-related temperature variations into a difference in potentials includes an upper conductive electrode designed to be exposed to a time-related temperature variation to be measured, a lower conductive electrode, and at least one layer of pyroelectric material based on a III-V nitride directly interposed between the upper and lower conductive electrodes to generate, between the upper and lower conductive electrodes, a difference in potentials corresponding to the temperature variation even in the absence of external mechanical stress.
    Type: Grant
    Filed: May 5, 2011
    Date of Patent: August 12, 2014
    Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Jean-Francois Mainguet, Alain Chambron, Bruno Charrat, Emmanuel Defay, Guy-Michel Parat
  • Patent number: 8721172
    Abstract: A method for calibrating an electronic chip comprises: the placing of a calibration transducer of a chip to be calibrated in contact with a first element and the measurement of a corresponding temperature variation ?Tc with this calibration transducer, the calibration thermal transducer having thermal characteristics different from those of the normal transducer so as to measure a temperature variation ?Tc that is different from a variation ?T1 measured by the normal transducer, and the calibration of the chip to be calibrated on the basis of the measured variations ?T1 and ?Tc.
    Type: Grant
    Filed: May 6, 2011
    Date of Patent: May 13, 2014
    Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Jean-Francois Mainguet, Alain Chambron, Guy-Michel Parat
  • Publication number: 20130296658
    Abstract: A component including at least one active element hermetically encapsulated in a cavity formed between a support and a cover, in which the support and the cover are made from an electrically conductive material, and are insulated electrically from one another, and include a first electrical connection between the active element and the support, and a second electrical connection, separate from the first connection, between the active element and the cover, and in which: the active element is securely attached to the support through a dielectric layer positioned between the support and the active element, and between the support and the cover; the second electrical connection includes a second portion of electrically conductive material electrically connected to the cover, positioned on the dielectric layer and electrically in contact with an electrically conductive sealing bead providing hermetic secure attachment of the cover to the support.
    Type: Application
    Filed: March 18, 2013
    Publication date: November 7, 2013
    Applicant: Commissariat a l'energie atomique et aux ene alt
    Inventors: Jean-Charles Souriau, Guy-Michel Parat, Renzo Dal Molin
  • Patent number: 8460987
    Abstract: A method for producing a layer of AlN having substantially vertical sides relative to the surface of a substrate, including: the formation of an AlN growth layer on a substrate, the deposition of the AlN layer, on at least said growth layer, the formation of a mask layer over the AlN layer, at least one edge of which is aligned with at least one edge or side of the growth layer, in a plane which is substantially perpendicular to a surface of the substrate or a surface of the growth layer, and the etching of the AlN layer.
    Type: Grant
    Filed: April 29, 2011
    Date of Patent: June 11, 2013
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Marc Aid, Emmanuel Defay, Aude Lefevre, Guy-Michel Parat
  • Publication number: 20110286491
    Abstract: This method for calibrating an electronic chip comprises: the placing of a calibration transducer of a chip to be calibrated in contact (144) with a first element and the measurement of a corresponding temperature variation ?Tc with this calibration transducer, the calibration thermal transducer having thermal characteristics different from those of the normal transducer so as to measure a temperature variation ?Tc that is different from a variation ?T1 measured by the normal transducer, and the calibration (154, 156) of the chip to be calibrated on the basis of the measured variations ?T1 and ?Tc.
    Type: Application
    Filed: May 6, 2011
    Publication date: November 24, 2011
    Applicant: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Jean-Francois Mainguet, Alain Chambron, Guy-Michel Parat
  • Publication number: 20110280276
    Abstract: A transducer for transducing time-related temperature variations into a difference in potentials includes an upper conductive electrode designed to be exposed to a time-related temperature variation to be measured, a lower conductive electrode, and at least one layer of pyroelectric material based on a III-V nitride directly interposed between the upper and lower conductive electrodes to generate, between the upper and lower conductive electrodes, a difference in potentials corresponding to the temperature variation even in the absence of external mechanical stress.
    Type: Application
    Filed: May 5, 2011
    Publication date: November 17, 2011
    Applicant: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Jean-Francois Mainguet, Alain Chambron, Bruno Charrat, Emmanuel Defay, Guy-Michel Parat
  • Publication number: 20110266594
    Abstract: A method is disclosed, for producing a layer of AlN having substantially vertical sides relative to the surface of a substrate, comprising: the formation of an AlN growth layer on a substrate, the deposition of the AlN layer, on at least said growth layer, the formation of a mask layer over the AlN layer, at least one edge of which is aligned with at least one edge or side of the growth layer, in a plane which is substantially perpendicular to a surface of the substrate or a surface of the growth layer, the etching of the AlN layer.
    Type: Application
    Filed: April 29, 2011
    Publication date: November 3, 2011
    Applicant: COMMISS. A L'ENERGIE ATOM. ET AUX ENERG. ALTERNA.
    Inventors: Marc Aid, Emmanuel Defay, Aude Lefevre, Guy-Michel Parat