Patents by Inventor Gwenaël LE RHUN

Gwenaël LE RHUN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11504958
    Abstract: The invention relates to a method for transferring at least one layer of material, comprising: producing first and second separating layers (108, 110), one against the other, on a first substrate (104); producing the layer to be transferred on the second separating layer (110); securing the layer to be transferred to a second substrate (106), forming a stack of different materials; and performing mechanical separation at the interface between the separating layers; in which the materials of the stack are such that the interface between the first and second separating layers has the weakest adhesion force, and the method comprises a step reducing an initial adhesion force of the interface between the first and second separating layers.
    Type: Grant
    Filed: June 19, 2019
    Date of Patent: November 22, 2022
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Gwenaël Le Rhun, Christel Dieppedale, Stéphane Fanget
  • Publication number: 20220299562
    Abstract: A structure for the testing of an electronic circuit for addressing a matrix of cells including a plurality of blocks containing at least one first material, piezoelectric and/or dielectric, the dielectric properties of which can be modulated according to the intensity of an electric field that is applied to it, at least one separation region between the blocks, the structure further including a shared electrode connected to a first end of the blocks containing the first material, a second end of the blocks containing the first material being arranged with respect to a face of the structure called “contact face”, so that when the contact face is disposed on the addressing circuit, the second end of the blocks is connected to at least one conductive stud of the addressing circuit.
    Type: Application
    Filed: March 14, 2022
    Publication date: September 22, 2022
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Aurélien SUHM, Gwenaël LE RHUN, Nicolas DEVANCIARD
  • Patent number: 11417723
    Abstract: A method for producing a metal-insulator-metal (MIM) type structure is provided, including producing, on a first substrate, first and second separation layers arranged one against the other; producing, on the second separation layer, an insulator layer including a perovskite structure material; producing a first gold and/or copper layer on the insulator layer, forming at least one part of a first electrode; making the first gold and/or copper layer integral with a second substrate; and forming a mechanical separation at an interface between the first and the second separation layers, the first separation layer remaining integral with the first substrate and the second separation layer remaining integral with the insulator layer, the insulator layer being arranged between the first electrode and a second electrode including at least one metal layer.
    Type: Grant
    Filed: June 19, 2019
    Date of Patent: August 16, 2022
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Gwenael Le Rhun, Christel Dieppedale
  • Patent number: 11262246
    Abstract: Pyroelectric detection device, including at least: a substrate; a membrane arranged on the substrate; a pyroelectric detection element arranged on the membrane or forming at least one part of the membrane, and including at least one portion of pyroelectric material arranged between first and second electrodes; a cavity passing through the substrate, emerging opposite a part of the membrane which forms a bottom wall of the cavity, and including side edges formed by the substrate; an element for stiffening the membrane arranged in the cavity, partially filling the cavity, made integral with the side edges of the cavity at at least two distinct anchoring regions, and arranged against the membrane.
    Type: Grant
    Filed: October 3, 2019
    Date of Patent: March 1, 2022
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Gwenael Le Rhun, Stephane Fanget, Andre Rouzaud
  • Patent number: 11251274
    Abstract: A semiconductor device includes a substrate; a semiconductor structure arranged on the substrate, the semiconductor structure including at least one first semiconductor layer; an insulator layer arranged on the semiconductor structure; a field plate covering a part of the insulator layer, wherein the insulator layer includes a non-linear dielectric material having a permittivity that decreases as an electric field traversing the dielectric material increases.
    Type: Grant
    Filed: November 12, 2019
    Date of Patent: February 15, 2022
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Romain Gwoziecki, Gwenaël Le Rhun
  • Publication number: 20210260859
    Abstract: The invention relates to a method for transferring at least one layer of material, comprising: producing first and second separating layers (108, 110), one against the other, on a first substrate (104); producing the layer to be transferred on the second separating layer (110); securing the layer to be transferred to a second substrate (106), forming a stack of different materials; and performing mechanical separation at the interface between the separating layers; in which the materials of the stack are such that the interface between the first and second separating layers has the weakest adhesion force, and the method comprises a step reducing an initial adhesion force of the interface between the first and second separating layers.
    Type: Application
    Filed: June 19, 2019
    Publication date: August 26, 2021
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Gwenaël LE RHUN, Christel DIEPPEDALE, Stéphane FANGET
  • Patent number: 11035734
    Abstract: Pyroelectric detection device, comprising at least: a suspended membrane; a pyroelectric detection element located on the suspended membrane and comprising at least one portion of pyroelectric material located between first and second electrodes, the first electrode being located between said at least one portion of pyroelectric material and the suspended membrane; and in which the membrane and the pyroelectric detection element are subjected to a higher compression stress than a limiting buckling stress of the suspended membrane and the pyroelectric detection element and together form a bistable structure.
    Type: Grant
    Filed: July 17, 2019
    Date of Patent: June 15, 2021
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Gwenael Le Rhun, Stephane Fanget
  • Patent number: 10707405
    Abstract: This invention relates to an electromechanical actuator comprising a support and a deformable element comprising a portion anchored to at least one anchoring zone of the support and mobile portion, the deformable element comprising an electro-active layer, a reference electrode arranged on a first face of the electro-active layer an actuating electrode arranged on a second face, opposite the first face, of the electro-active layer comprises a capacitive device for measuring the deformation of the deformable element, said device being at least partially formed by a capacitive stack comprising a measuring electrode on the second face of the electro-active layer, a measuring portion of the reference electrode located facing the measuring electrode, and a portion of the electro-active layer inserted between the measuring electrode.
    Type: Grant
    Filed: June 16, 2017
    Date of Patent: July 7, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Julie Abergel, Jean-Sebastien Danel, Emmanuel Defay, Gwenael Le Rhun
  • Publication number: 20200152747
    Abstract: A semiconductor device includes a substrate; a semiconductor structure arranged on the substrate, the semiconductor structure including at least one first semiconductor layer; an insulator layer arranged on the semiconductor structure; a field plate covering a part of the insulator layer, wherein the insulator layer includes a non-linear dielectric material having a permittivity that decreases as an electric field traversing the dielectric material increases.
    Type: Application
    Filed: November 12, 2019
    Publication date: May 14, 2020
    Inventors: Romain GWOZIECKI, Gwenaël LE RHUN
  • Publication number: 20200109992
    Abstract: Pyroelectric detection device, including at least: a substrate; a membrane arranged on the substrate; a pyroelectric detection element arranged on the membrane or forming at least one part of the membrane, and including at least one portion of pyroelectric material arranged between first and second electrodes; a cavity passing through the substrate, emerging opposite a part of the membrane which forms a bottom wall of the cavity, and including side edges formed by the substrate; an element for stiffening the membrane arranged in the cavity, partially filling the cavity, made integral with the side edges of the cavity at at least two distinct anchoring regions, and arranged against the membrane.
    Type: Application
    Filed: October 3, 2019
    Publication date: April 9, 2020
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Gwenael LE RHUN, Stephane Fanget, Andre Rouzaud
  • Publication number: 20200025620
    Abstract: Pyroelectric detection device, comprising at least: a suspended membrane; a pyroelectric detection element located on the suspended membrane and comprising at least one portion of pyroelectric material located between first and second electrodes, the first electrode being located between said at least one portion of pyroelectric material and the suspended membrane; and in which the membrane and the pyroelectric detection element are subjected to a higher compression stress than a limiting buckling stress of the suspended membrane and the pyroelectric detection element and together form a bistable structure.
    Type: Application
    Filed: July 17, 2019
    Publication date: January 23, 2020
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Gwenael LE RHUN, Stephane FANGET
  • Publication number: 20200013852
    Abstract: A method for producing a metal-insulator-metal (MIM) type structure is provided, including producing, on a first substrate, first and second separation layers arranged one against the other; producing, on the second separation layer, an insulator layer including a perovskite structure material; producing a first gold and/or copper layer on the insulator layer, forming at least one part of a first electrode; making the first gold and/or copper layer integral with a second substrate; and forming a mechanical separation at an interface between the first and the second separation layers, the first separation layer remaining integral with the first substrate and the second separation layer remaining integral with the insulator layer, the insulator layer being arranged between the first electrode and a second electrode including at least one metal layer.
    Type: Application
    Filed: June 19, 2019
    Publication date: January 9, 2020
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Gwenael LE RHUN, Christel DIEPPEDALE
  • Publication number: 20200013947
    Abstract: A method for producing a piezoelectric transducer device is provided, including a membrane including at least one silicon and/or silicon nitride layer; a piezoelectric layer including at least one piezoelectric material with crystalline perovskite structure and arranged on the membrane; first and second electrodes electrically in contact with the piezoelectric layer; and in which the piezoelectric layer is in direct contact with the silicon and/or silicon nitride layer, or in which the piezoelectric layer is in contact with the silicon and/or silicon nitride layer solely through one or more metal layers.
    Type: Application
    Filed: June 19, 2019
    Publication date: January 9, 2020
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventor: Gwenael LE RHUN
  • Publication number: 20200001327
    Abstract: A method for producing an at least partially transparent device is provided, including producing, on a first substrate, first and second separation layers one against the other; producing, on the second separation layer, an at least partially transparent functional layer; making the functional layer integral with a second at least partially transparent substrate; forming a mechanical separation at an interface between the separation layers; removing the second separation layer; producing a first at least partially transparent electrode layer on the functional layer; where the materials of the stack are chosen such that the interface between the separation layers corresponds to that, among all the interfaces of the stack, having the lowest adherence force.
    Type: Application
    Filed: June 19, 2019
    Publication date: January 2, 2020
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventor: Gwenael LE RHUN
  • Publication number: 20170365770
    Abstract: This invention relates to an electromechanical actuator comprising a support and a deformable element comprising a portion anchored to at least one anchoring zone of the support and mobile portion, the deformable element comprising an electro-active layer, a reference electrode arranged on a first face of the electro-active layer an actuating electrode arranged on a second face, opposite the first face, of the electro-active layer comprises a capacitive device for measuring the deformation of the deformable element, said device being at least partially formed by a capacitive stack comprising a measuring electrode on the second face of the electro-active layer, a measuring portion of the reference electrode located facing the measuring electrode, and a portion of the electro-active layer inserted between the measuring electrode.
    Type: Application
    Filed: June 16, 2017
    Publication date: December 21, 2017
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Julie ABERGEL, Jean-Sebastien DANEL, Emmanuel DEFAY, Gwenael LE RHUN
  • Patent number: 9673269
    Abstract: An integrated capacitor comprises a layer of dielectric material known as functional dielectric material based on crystallized material of perovskite type, between at least one first electrode known as a bottom electrode at the surface of a substrate and at least one second electrode known as a top electrode, said electrodes being electrically insulated by a layer of electrically insulating material in order to allow at least one contact on the top electrode. The electrically insulating material is made of an amorphous dielectric material of perovskite type having a dielectric constant lower than that of the crystallized material of perovskite type. The contact is formed from an etched contacting layer in contact with the electrically insulating dielectric layer level with its surface parallel to the plane of the layers. A process for manufacturing such an integrated capacitor is also provided.
    Type: Grant
    Filed: September 4, 2011
    Date of Patent: June 6, 2017
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Emmanuel Defay, Gwenaël Le Rhun, Aurélien Suhm
  • Patent number: 9620581
    Abstract: A method and an electrical device with superimposed layers in an alternation of conductive layers and insulating layers. A mesa-type structure is formed, leaving for at least one conductive layer, an uncovered peripheral portion accessible for connection. In this portion, an electrically insulating pattern is configured in order to mark out an electrically insulated area located in the peripheral portion of said at least one of the electrically conductive layers. Application to electrical capacitances and redistribution layers for microelectronic devices.
    Type: Grant
    Filed: June 10, 2015
    Date of Patent: April 11, 2017
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Sylvain Pelloquin, Christel Dieppedale, Gwenael Le Rhun, Henri Sibuet
  • Publication number: 20150357401
    Abstract: A method and an electrical device with superimposed layers in an alternation of conductive layers and insulating layers. A mesa-type structure is formed, leaving for at least one conductive layer, an uncovered peripheral portion accessible for connection. In this portion, an electrically insulating pattern is configured in order to mark out an electrically insulated area located in the peripheral portion of said at least one of the electrically conductive layers. Application to electrical capacitances and redistribution layers for microelectronic devices.
    Type: Application
    Filed: June 10, 2015
    Publication date: December 10, 2015
    Applicant: Commissariat a L'Energie Atomique et aux Energies Alternatives
    Inventors: Sylvain PELLOQUIN, Christel DIEPPEDALE, Gwenael LE RHUN, Henri SIBUET
  • Patent number: 9190599
    Abstract: In a process for fabricating a membrane, including, on a substrate, a thin-film multilayer including a film of piezoelectric material placed between a top electrode film and a bottom electrode film and an elastic film supporting said piezoelectric film, the process includes: determining at least one concavity/convexity curvature of said membrane along an axis parallel to the plane of the films so that at least one inflection point is defined, said point allowing a first region and a second region, corresponding to a concave part and a convex part or vice versa, to be isolated; depositing, on the surface of the substrate, a thin-film multilayer including at least one film of piezoelectric material, one bottom electrode film and one top electrode film; and structuring at least one of the electrode films to define at least said first membrane region, in which an electric field perpendicular to the plane of the films may be applied, and at least said second region, in which an electric field parallel to the plane
    Type: Grant
    Filed: September 14, 2010
    Date of Patent: November 17, 2015
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Emmanuel Defay, Gwenaël Le Rhun
  • Patent number: 8692443
    Abstract: An electrical component comprises a lead-based perovskite crystal material layer between a lower electrode on the surface of a substrate and an upper electrode, characterized in that the lower electrode comprises a stabilizing first layer made of a first material and a seeding second layer made of a second material, the first and second materials having the same chemical composition but different structural parameters and/or densities. A process for fabricating a component is also provided, in which the material with a perovskite structure may be PZT with a (100) or (111) orientation.
    Type: Grant
    Filed: May 25, 2012
    Date of Patent: April 8, 2014
    Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Matthieu Cueff, Emmanuel Defay, Gwenael Le Rhun