Patents by Inventor GwideokRyan Lee
GwideokRyan Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10707254Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation pattern in the substrate to electrically isolate a first pixel and a second pixel from each other, a conductive pattern in the device isolation pattern, and a doping layer on a side surface of the device isolation pattern. The doping layer may have a conductivity type different from a conductivity type of the substrate.Type: GrantFiled: October 5, 2018Date of Patent: July 7, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Taeyon Lee, Gwideokryan Lee, Myungwon Lee
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Patent number: 10468460Abstract: An image sensor includes a photoelectric conversion element and a charge storage node coupled to the photoelectric conversion element. The charge storage node may store photocharges generated in the photoelectric conversion element. The charge storage node may include a floating diffusion region in a semiconductor substrate, a barrier dopant region on the floating diffusion region in the semiconductor substrate, and a charge drain region on the barrier dopant region in the semiconductor substrate, where the semiconductor substrate is associated with a first conductivity type, the floating diffusion region is associated with a second conductivity type, the barrier dopant region is associated with the first conductivity type, and the charge drain region is associated with the second conductivity type.Type: GrantFiled: October 19, 2017Date of Patent: November 5, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Masaru Ishii, GwideokRyan Lee, Taeyon Lee
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Patent number: 10361239Abstract: An image sensor having active, peripheral and dummy regions is provided as follows. A dummy through electrode is disposed in the substrate. An active through electrode is disposed in the substrate. An insulation structure in which a color filter is embedded is disposed on the substrate. A dummy bottom electrode is disposed on the insulation structure and connected electrically to the dummy through electrode. An active bottom electrode is disposed on the insulation structure and connected electrically to the active through electrode. A photoelectric conversion layer is disposed on the insulation structure. A top electrode is disposed on the photoelectric conversion layer and the dummy bottom electrode. The top electrode is connected electrically to the dummy bottom electrode. The photoelectric conversion layer is interposed between the top electrode and the active bottom electrode which are separated from each other.Type: GrantFiled: September 5, 2017Date of Patent: July 23, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kwang-Min Lee, GwideokRyan Lee, Seokjin Kwon, Beomsuk Lee, Taeyon Lee, Dongmo Im
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Publication number: 20190043902Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation pattern in the substrate to electrically isolate a first pixel and a second pixel from each other, a conductive pattern in the device isolation pattern, and a doping layer on a side surface of the device isolation pattern. The doping layer may have a conductivity type different from a conductivity type of the substrate.Type: ApplicationFiled: October 5, 2018Publication date: February 7, 2019Inventors: TAEYON LEE, Gwideokryan Lee, Myungwon Lee
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Patent number: 10134792Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation pattern in the substrate to electrically isolate a first pixel and a second pixel from each other, a conductive pattern in the device isolation pattern, and a doping layer on a side surface of the device isolation pattern. The doping layer may have a conductivity type different from a conductivity type of the substrate.Type: GrantFiled: April 27, 2017Date of Patent: November 20, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Taeyon Lee, Gwideokryan Lee, Myungwon Lee
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Publication number: 20180301509Abstract: An image sensor includes a photoelectric conversion element and a charge storage node coupled to the photoelectric conversion element. The charge storage node may store photocharges generated in the photoelectric conversion element. The charge storage node may include a floating diffusion region in a semiconductor substrate, a barrier dopant region on the floating diffusion region in the semiconductor substrate, and a charge drain region on the barrier dopant region in the semiconductor substrate, where the semiconductor substrate is associated with a first conductivity type, the floating diffusion region is associated with a second conductivity type, the barrier dopant region is associated with the first conductivity type, and the charge drain region is associated with the second conductivity type.Type: ApplicationFiled: October 19, 2017Publication date: October 18, 2018Applicant: Samsung Electronics Co., Ltd.Inventors: Masaru ISHII, GwideokRyan LEE, Taeyon LEE
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Publication number: 20180204874Abstract: An image sensor having active, peripheral and dummy regions is provided as follows. A dummy through electrode is disposed in the substrate. An active through electrode is disposed in the substrate. An insulation structure in which a color filter is embedded is disposed on the substrate. A dummy bottom electrode is disposed on the insulation structure and connected electrically to the dummy through electrode. An active bottom electrode is disposed on the insulation structure and connected electrically to the active through electrode. A photoelectric conversion layer is disposed on the insulation structure. A top electrode is disposed on the photoelectric conversion layer and the dummy bottom electrode. The top electrode is connected electrically to the dummy bottom electrode. The photoelectric conversion layer is interposed between the top electrode and the active bottom electrode which are separated from each other.Type: ApplicationFiled: September 5, 2017Publication date: July 19, 2018Inventors: Kwang-Min LEE, GwideokRyan LEE, SEOKJIN KWON, BEOMSUK LEE, TAEYON LEE, DONGMO IM
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Publication number: 20180061873Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation pattern in the substrate to electrically isolate a first pixel and a second pixel from each other, a conductive pattern in the device isolation pattern, and a doping layer on a side surface of the device isolation pattern. The doping layer may have a conductivity type different from a conductivity type of the substrate.Type: ApplicationFiled: April 27, 2017Publication date: March 1, 2018Inventors: TAEYON LEE, Gwideokryan Lee, Myungwon Lee
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Patent number: 9679929Abstract: A binary image sensor includes a plurality of unit pixels on a substrate having a surface on which light is incident. At least one quantum dot is disposed on the surface of a substrate. A column sense amplifier circuit is configured to detect binary information of a selected unit pixel among the plurality of unit pixels from a voltage or a current detected from the selected unit pixel, and a processing unit is configured to process binary information of the respective unit pixels to generate pixel image information. Related devices and methods of operation are also discussed.Type: GrantFiled: October 11, 2013Date of Patent: June 13, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: GwideokRyan Lee, SangChul Sul, Myungwon Lee, Min-ho Kim, Taechan Kim, Taeseok Oh, KwangHyun Lee, Taeyon Lee, Younggu Jin
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Patent number: 9293489Abstract: An image sensor includes a semiconductor substrate, a storage node region in the semiconductor substrate, an insulating portion on the semiconductor substrate, a via contact extending through the insulating portion, a photo-electric converter in the semiconductor substrate and spaced apart from the storage node region, an organic photo-electric layer on the insulating portion, and a buffer interposed between and electrically connecting the via contact and the storage node region.Type: GrantFiled: June 26, 2014Date of Patent: March 22, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Myungwon Lee, Sangchul Sul, Hirosige Goto, Sae-Young Kim, Kang-Su Lee, Gwideokryan Lee, Masaru Ishii
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Publication number: 20150001663Abstract: An image sensor includes a semiconductor substrate, a storage node region in the semiconductor substrate, an insulating portion on the semiconductor substrate, a via contact extending through the insulating portion, a photo-electric converter in the semiconductor substrate and spaced apart from the storage node region, an organic photo-electric layer on the insulating portion, and a buffer interposed between and electrically connecting the via contact and the storage node region.Type: ApplicationFiled: June 26, 2014Publication date: January 1, 2015Inventors: MYUNGWON LEE, SANGCHUL SUL, HIROSIGE GOTO, SAE-YOUNG KIM, KANG-SU LEE, GWIDEOKRYAN LEE, MASARU ISHII
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Publication number: 20140103193Abstract: A binary image sensor includes a plurality of unit pixels on a substrate having a surface on which light is incident. At least one quantum dot is disposed on the surface of a substrate. A column sense amplifier circuit is configured to detect binary information of a selected unit pixel among the plurality of unit pixels from a voltage or a current detected from the selected unit pixel, and a processing unit is configured to process binary information of the respective unit pixels to generate pixel image information. Related devices and methods of operation are also discussed.Type: ApplicationFiled: October 11, 2013Publication date: April 17, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: GwideokRyan Lee, SangChul Sul, Myungwon Lee, Min-ho Kim, Taechan Kim, Taeseok Oh, KwangHyun Lee, Taeyon Lee, Younggu Jin