Patents by Inventor H. J. Chang

H. J. Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Source inner shield for eaton NV-10 high current implanter
    Patent number: 5883393
    Abstract: A plurality of removable shields are disclosed for use with ion source in ion implanters. Specifically, the shields fit over the extraction electrode assembly, the sides of the interior walls and the cold-plate inside an ion source chamber. The shields are easily mountable and dismountable by the maintenance personnel. It is shown that shields can very effectively protect the insides of ion source from contamination by toxic materials emanating from the ionization source. A method is also disclosed for cleaning the shields outside the ion source by means of bead blasting followed by washing by deionized water and rinse with isopropyl alcohol. It is shown that the turn-around-time for preventive maintenance of an ion source in an ion implanter can be shortened by a factor of four.
    Type: Grant
    Filed: April 6, 1998
    Date of Patent: March 16, 1999
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Fu-Kang Tien, H. J. Chang
  • Source inner shield for eaton NV-10 high current implanter
    Patent number: 5763895
    Abstract: A plurality of removable shields are disclosed for use with ion source in ion implanters. Specifically, the shields fit over the extraction electrode assembly, the sides of the interior walls and the cold-plate inside an ion source chamber. The shields are easily mountable and dismountable by the maintenance personnel. It is shown that shields can very effectively protect the insides of ion source from contamination by toxic materials emanating from the ionization source. A method is also disclosed for cleaning the shields outside the ion source by means of bead blasting followed by washing by deionized water and rinse with isopropyl alcohol. It is shown that the turn-around-time for preventive maintenance of an ion source in an ion implanter can be shortened by a factor of four.
    Type: Grant
    Filed: January 13, 1997
    Date of Patent: June 9, 1998
    Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
    Inventors: Fu-Kang Tien, H. J. Chang