Patents by Inventor Hajime Matsuda

Hajime Matsuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210167188
    Abstract: A process of forming a field effect transistor (FET) of a type of high electron mobility transistor (HEMT) reducing damages caused in a semiconductor layer is disclosed. The process carries out steps of: (a) depositing an insulating film on a semiconductor stack; (b) depositing a conductive film on the insulating film; (c) forming an opening in the conductive film and the insulating film by a dry-etching using ions of reactive gas to expose a surface of the semiconductor stack; and (d) forming a gate electrode to be in contact with the surface of the semiconductor stack through the opening, the gate electrode filling the opening in the conductive film and the insulating film.
    Type: Application
    Filed: December 10, 2020
    Publication date: June 3, 2021
    Applicant: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
    Inventors: Tadashi WATANABE, Hajime MATSUDA
  • Patent number: 10896970
    Abstract: A process of forming a field effect transistor (FET) of a type of high electron mobility transistor (HEMT) reducing damages caused in a semiconductor layer is disclosed. The process carries out steps of: (a) depositing an insulating film on a semiconductor stack; (b) depositing a conductive film on the insulating film; (c) forming an opening in the conductive film and the insulating film by a dry-etching using ions of reactive gas to expose a surface of the semiconductor stack; and (d) forming a gate electrode to be in contact with the surface of the semiconductor stack through the opening, the gate electrode filling the opening in the conductive film and the insulating film.
    Type: Grant
    Filed: April 15, 2020
    Date of Patent: January 19, 2021
    Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
    Inventors: Tadashi Watanabe, Hajime Matsuda
  • Patent number: 10840091
    Abstract: A process of forming a nucleus fanning layer in a nitride semiconductor epitaxial substrate is disclosed. The process includes steps of growing: a lower layer of the nucleus forming layer on a substrate; an upper layer of the nucleus thrilling layer on the lower layer; and a nitride semiconductor layer each by the metal organic chemical vapor deposition (MOCVD) technique. The growth of the nitride semiconductor layer is done at a temperature lower than a growth temperature for the upper layer, and the growth of the upper layer is done by supplying ammonia (NH3) at a flow rate greater than the flow rate of ammonia (NH3) timing the growth of the lower layer.
    Type: Grant
    Filed: December 19, 2017
    Date of Patent: November 17, 2020
    Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
    Inventor: Hajime Matsuda
  • Publication number: 20200312982
    Abstract: A process of forming a field effect transistor (FET) of a type of high electron mobility transistor (HEMT) reducing damages caused in a semiconductor layer is disclosed. The process carries out steps of: (a) depositing an insulating film on a semiconductor stack; (b) depositing a conductive film on the insulating film; (c) forming an opening in the conductive film and the insulating film by a dry-etching using ions of reactive gas to expose a surface of the semiconductor stack; and (d) forming a gate electrode to be in contact with the surface of the semiconductor stack through the opening, the gate electrode filling the opening in the conductive film and the insulating film.
    Type: Application
    Filed: April 15, 2020
    Publication date: October 1, 2020
    Applicant: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
    Inventors: Tadashi WATANABE, Hajime MATSUDA
  • Publication number: 20200264464
    Abstract: To miniaturize an illumination device while meeting requirements of angle characteristics of a liquid crystal panel. A light source 31b is arranged above an outer end portion side of a liquid crystal panel 31d that is positioned radially outward of an illumination housing. A relative position between the liquid crystal panel 31d and the light source 31b is set such that light emitted from the light source 31b is incident within an effective angle range of the liquid crystal panel 31d.
    Type: Application
    Filed: December 27, 2019
    Publication date: August 20, 2020
    Applicant: Keyence Corporation
    Inventor: Hajime MATSUDA
  • Patent number: 10734510
    Abstract: A process for forming a nitride semiconductor device is disclosed. The resulting semiconductor device includes a semiconductor stack with a top layer containing gallium (Ga) and nitrogen (N), electrodes of a source, a gate and a drain provided on the semiconductor stack, and a silicon nitride (SiN) film provided on the GaN layer between the drain electrode and the gate electrode but apart from the gate electrode. The SiN film has a silicon rich composition with a composition ratio of Si/N that is greater than ¾ and substantial oxygen contents.
    Type: Grant
    Filed: December 6, 2019
    Date of Patent: August 4, 2020
    Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
    Inventor: Hajime Matsuda
  • Patent number: 10686053
    Abstract: A high electron mobility transistor (HEMT) includes a semiconductor layer on a substrate; an insulating film on the semiconductor layer; a gate electrode in contact with a surface of the semiconductor layer through an opening in the insulating film; and a conductive film provided between the insulating film and a portion of the gate electrode at peripheries of the opening. The insulating film and the conductive film are made of respective materials containing silicon (Si). The gate electrode includes a Schottky metal in contact with the semiconductor layer and a cover metal provided on the Schottky metal. The Schottky metal covers the conductive film thereunder.
    Type: Grant
    Filed: September 11, 2018
    Date of Patent: June 16, 2020
    Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
    Inventors: Tadashi Watanabe, Hajime Matsuda
  • Publication number: 20200127129
    Abstract: A process for forming a nitride semiconductor device is disclosed. The resulting semiconductor device includes a semiconductor stack with a top layer containing gallium (Ga) and nitrogen (N), electrodes of a source, a gate and a drain provided on the semiconductor stack, and a silicon nitride (SiN) film provided on the GaN layer between the drain electrode and the gate electrode but apart from the gate electrode. The SiN film has a silicon rich composition with a composition ratio of Si/N that is greater than 3/4 and substantial oxygen contents.
    Type: Application
    Filed: December 6, 2019
    Publication date: April 23, 2020
    Applicant: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
    Inventor: Hajime MATSUDA
  • Patent number: 10627216
    Abstract: Based on a plurality of first pattern images, a first angle image with each pixel having irradiation angle information of first measuring pattern lights on the measurement object is generated, and based on a plurality of second pattern images, a second angle image with each pixel having irradiation angle information of second measuring pattern lights on the measurement object is generated. In accordance with the irradiation angle information of each pixel in the first angle image, the irradiation angle information of each pixel in the second angle image, and relative position information of a first light projection unit and a second light projection unit, the height of the measurement object in a direction of a central axis of a lighting device is measured.
    Type: Grant
    Filed: January 11, 2019
    Date of Patent: April 21, 2020
    Assignee: Keyence Corporation
    Inventors: Hajime Matsuda, Masashi Nakao
  • Patent number: 10546746
    Abstract: A process of growing a barrier layer made of AlGaN on a GaN channel layer is disclosed. The process includes steps of, growing the GaN channel layer, growing the AlGaN barrier layer, and growing a cap layer made of GaN. The growth temperature of the AlGaN barrier layer monotonically lowers from the initial temperature, which may be equal to the growth temperature for the GaN channel layer, to the finish temperature that is lower than the initial temperature and may be substantially equal to the growth temperature of the GaN cap layer.
    Type: Grant
    Filed: June 26, 2018
    Date of Patent: January 28, 2020
    Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
    Inventor: Hajime Matsuda
  • Patent number: 10541322
    Abstract: A nitride semiconductor device is disclosed. The semiconductor device includes a semiconductor stack with a top layer containing gallium (Ga) and nitrogen (N), electrodes of a source, a gate and a drain provided on the semiconductor stack, and a silicon nitride (SiN) film provided on the GaN layer between the drain electrode and the gate electrode but apart from the gate electrode. The SiN film has a silicon rich composition with a composition ratio of Si/N that is greater than 3/4 and substantial oxygen contents.
    Type: Grant
    Filed: January 5, 2018
    Date of Patent: January 21, 2020
    Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
    Inventor: Hajime Matsuda
  • Publication number: 20190293409
    Abstract: Based on a plurality of first pattern images, a first angle image with each pixel having irradiation angle information of first measuring pattern lights on the measurement object is generated, and based on a plurality of second pattern images, a second angle image with each pixel having irradiation angle information of second measuring pattern lights on the measurement object is generated. In accordance with the irradiation angle information of each pixel in the first angle image, the irradiation angle information of each pixel in the second angle image, and relative position information of a first light projection unit and a second light projection unit, the height of the measurement object in a direction of a central axis of a lighting device is measured.
    Type: Application
    Filed: January 11, 2019
    Publication date: September 26, 2019
    Applicant: Keyence Corporation
    Inventors: Hajime Matsuda, Masashi Nakao
  • Patent number: 10241056
    Abstract: To facilitate adjusting of a distance from an inspection target to an illumination section by providing a movable illumination section that is movable independently of the imaging section. An illumination apparatus has a plurality of LEDs arranged in a substantially annular form, a light diffusion member for diffusing light emitted from the plurality of LEDs, and a lighting control part for lighting the plurality of light sources in accordance with a predetermined lighting pattern when designated to start lighting. In particular, the illumination apparatus moves independently of a camera to adjust a distance to a workpiece.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: March 26, 2019
    Assignee: Keyence Corporation
    Inventor: Hajime Matsuda
  • Publication number: 20190081154
    Abstract: A process of forming a field effect transistor (FET) of a type of high electron mobility transistor (HEMT) reducing damages caused in a semiconductor layer is disclosed. The process carries out steps of: (a) depositing an insulating film on a semiconductor stack; (b) deposing a conductive film on the insulating film; (c) forming an opening in the conductive film and the insulating film by a dry-etching using ions of reactive gas to exposes a surface of the semiconductor stack; and (d) forming a gate electrode to be in contact with the surface of the semiconductor stack through the opening, the gate electrode filling the opening in the conductive film and the insulating film.
    Type: Application
    Filed: September 11, 2018
    Publication date: March 14, 2019
    Applicant: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
    Inventors: Tadashi WATANABE, Hajime MATSUDA
  • Publication number: 20190064078
    Abstract: To facilitate adjusting of a distance from an inspection target to an illumination section by providing a movable illumination section that is movable independently of the imaging section. An illumination apparatus has a plurality of LEDs arranged in a substantially annular form, a light diffusion member for diffusing light emitted from the plurality of LEDs, and a lighting control part for lighting the plurality of light sources in accordance with a predetermined lighting pattern when designated to start lighting. In particular, the illumination apparatus moves independently of a camera to adjust a distance to a workpiece.
    Type: Application
    Filed: October 25, 2018
    Publication date: February 28, 2019
    Applicant: Keyence Corporation
    Inventor: Hajime Matsuda
  • Publication number: 20190006176
    Abstract: A process of growing a barrier layer made of AlGaN on a GaN channel layer is disclosed. The process includes steps of, growing the GaN channel layer, growing the AlGaN barrier layer, and growing a cap layer made of GaN. The growth temperature of the AlGaN barrier layer monotonically lowers from the initial temperature, which may be equal to the growth temperature for the GaN channel layer, to the finish temperature that is lower than the initial temperature and may be substantially equal to the growth temperature of the GaN cap layer.
    Type: Application
    Filed: June 26, 2018
    Publication date: January 3, 2019
    Applicant: Sumitomo Electric Device Innovations, Inc
    Inventor: Hajime MATSUDA
  • Patent number: 10156525
    Abstract: To facilitate adjusting of a distance from an inspection target to an illumination section by providing a movable illumination section that is movable independently of the imaging section. An illumination apparatus has a plurality of LEDs arranged in a substantially annular form, a light diffusion member for diffusing light emitted from the plurality of LEDs, and a lighting control part for lighting the plurality of light sources in accordance with a predetermined lighting pattern when designated to start lighting. In particular, the illumination apparatus moves independently of a camera to adjust a distance to a workpiece.
    Type: Grant
    Filed: June 15, 2018
    Date of Patent: December 18, 2018
    Assignee: Keyence Corporation
    Inventor: Hajime Matsuda
  • Patent number: 10147605
    Abstract: A process of forming an epitaxial substrate that includes nitride semiconductor layers is disclosed. The process includes steps of; (a) growing a nucleus forming layer on the substrate, and (b) growing a nitride semiconductor layer on the nucleus forming layer. The step (a) sets first and second growth temperatures in an upstream side and a downstream side, respectively, of the substrate for the flow of the source gases, where the first temperature of the upstream side is at least 5° C. but at most 10° C. lower than the second temperature of the downstream side, and the second temperature is higher than 1100° C.
    Type: Grant
    Filed: November 22, 2017
    Date of Patent: December 4, 2018
    Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
    Inventors: Tadashi Watanabe, Hajime Matsuda
  • Publication number: 20180292327
    Abstract: To facilitate adjusting of a distance from an inspection target to an illumination section by providing a movable illumination section that is movable independently of the imaging section. An illumination apparatus has a plurality of LEDs arranged in a substantially annular form, a light diffusion member for diffusing light emitted from the plurality of LEDs, and a lighting control part for lighting the plurality of light sources in accordance with a predetermined lighting pattern when designated to start lighting. In particular, the illumination apparatus moves independently of a camera to adjust a distance to a workpiece.
    Type: Application
    Filed: June 15, 2018
    Publication date: October 11, 2018
    Applicant: Keyence Corporation
    Inventor: Hajime Matsuda
  • Patent number: 10056252
    Abstract: A process of forming a semiconductor device by use of a MOCVD technique is disclosed. The semiconductor device, which is made of primarily nitride semiconductor materials, includes a GaN channel layer, an AlGaN barrier layer, and a GaN cap layer on a substrate. The barrier layer and the cap layer are grown under a gradient temperature condition where the upstream side of the substrate with respect to the flow of the MOCVD source gases is at a higher temperature as compared with the temperature at the downstream side of the substrate with respect to the flow of the source gases.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: August 21, 2018
    Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
    Inventors: Tadashi Watanabe, Hajime Matsuda