Patents by Inventor Hajime Matsuda

Hajime Matsuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050189584
    Abstract: A semiconductor device includes a compound semiconductor substrate, a channel layer provided on the compound semiconductor substrate, a buried layer provided on the channel layer, a first recess formed in the buried layer in an E-mode region, a second recess formed in the first recess in the E-mode region and another second recess formed in the buried layer in a D-mode region, and a gate electrode provided in the second recess in the E-mode region and another gate electrode provided in the second recess in the D-mode region, and a distance between a surface of the buried layer and a bottom of the second recess in the E-mode region is shorter than another distance between another surface of the buried layer and a bottom of said another second recess in the D-mode region.
    Type: Application
    Filed: January 14, 2005
    Publication date: September 1, 2005
    Applicant: EUDYNA DEVICES INC.
    Inventor: Hajime Matsuda
  • Publication number: 20050123655
    Abstract: In the container-packed, oil-in-water type emulsified food product in accordance with the present invention, an oil-in-water type emulsified food comprises edible oils and fats, vinegar and egg yolk, and is packed and sealed in a container with an oxygen barrier property and has a dissolved oxygen concentration immediately after manufacturing is 0.8 to 8.1% O2. This container-packed, oil-in-water type emulsified food product demonstrates excellent flavor balance and small degradation of quality caused by oxidation during storage.
    Type: Application
    Filed: March 18, 2003
    Publication date: June 9, 2005
    Applicant: Q.P. Corporation
    Inventors: Hideaki Kobayashi, Masahiro Ariizumi, Yasuhiko Shigematsu, Mitsuru Takamiya, Hajime Matsuda, Nobuhisa Sakabe
  • Patent number: 6504189
    Abstract: A microstrip line includes a first conductor pattern formed on a substrate, a second conductor pattern formed on the first conductor pattern with a width substantially identical with a width of the first conductor pattern, and a third conductor pattern formed on the second conductor pattern with a width smaller than the width of the second conductor pattern.
    Type: Grant
    Filed: June 30, 1999
    Date of Patent: January 7, 2003
    Assignee: Fujitsu Quantum Devices Limited
    Inventors: Hajime Matsuda, Norikazu Iwagami
  • Patent number: 6476427
    Abstract: A microwave monolithic integrated circuit comprises a T-shaped gate electrode including a Schottky gate electrode formed on a first region of a compound semiconductor substrate, a pair of ohmic electrodes making an ohmic contact with a surface of the substrate in the first region at respective sides of the T-shaped gate electrode, a lower capacitor electrode pattern formed on a second region of the compound semiconductor substrate with a composition substantially identical with a low-resistance, top electrode constituting the T-shaped gate electrode on the Schottky gate electrode, a dielectric film formed on the lower electrode pattern, and an upper electrode pattern formed on the dielectric film.
    Type: Grant
    Filed: February 6, 2001
    Date of Patent: November 5, 2002
    Assignee: Fujitsu Quantum Devices Limited
    Inventor: Hajime Matsuda
  • Patent number: 6329230
    Abstract: A semiconductor device includes a gate structure formed on a substrate in which an LDD structure is formed, wherein gate structure includes a Schottky electrode making a Schottky contact with a channel region in the substrate, a low-resistance layer provided above the Schottky electrode, and a stress-relaxation layer interposed between the Schottky electrode and the stress-relaxation layer. The low-resistance layer and said stress-relaxation layer form an overhang structure with respect to the Schottky electrode.
    Type: Grant
    Filed: April 11, 2000
    Date of Patent: December 11, 2001
    Assignee: Fujitsu Quantum Devices Limited
    Inventor: Hajime Matsuda
  • Patent number: 6316297
    Abstract: The method for fabricating a semiconductor device comprises the steps of forming on a semiconductor substrate a gate electrode, and an eave-shaped film of an inorganic material formed on the upper surface of the gate electrode and having a eave-shaped portion projected beyond the edge of the gate electrode; and ion-implanting a dopant with the gate electrode as a mask and with the eave-shaped portion of the eave-shaped film as a through film to form a first diffusion layer in the semiconductor substrate immediately below the eave-shaped portion and a second diffusion layer which is connected to the first diffusion layer, and is deeper and has a higher dopant concentration than the first diffusion layer, in the semiconductor substrate in a region where the eave-shaped film is not formed.
    Type: Grant
    Filed: November 8, 1999
    Date of Patent: November 13, 2001
    Assignee: Fujitsu Quantum Devices Limited
    Inventor: Hajime Matsuda
  • Patent number: 6309653
    Abstract: A cholesterol ester clathrate comprising a cholesterol ester included in a hydroxyalkylated cyclodextrin; a hydrous composition comprising a hydroxyalkylated cyclodextrin, a cholesterol ester and water; a hydrous composition comprising a hydroxyalkylated cyclodextrin, a cholesterol ester, a hydrous stabilizer, and water; a hydrous composition comprising a hydroxyalkylated cyclodextrin, a cholesterol ester, a clay mineral, and water; cosmetics containing these hydrous compositions; and process for the preparation thereof. The clathrate exhibits an emulsifying effect in itself. Further, the hydrous compositions are excellent in water-holding capacity and are improved in hydration properties and separation stability at a high temperature.
    Type: Grant
    Filed: January 11, 1999
    Date of Patent: October 30, 2001
    Assignee: Shiseido Co., Ltd.
    Inventors: Yohei Hamano, Akio Nasu, Takashi Minami, Takayuki Miyazaki, Noriko Tomita, Takashi Matsumoto, Yoshikazu Soyama, Kenzo Ito, Hajime Matsuda, Hideyuki Sumiyoshi
  • Publication number: 20010012652
    Abstract: A microwave monolithic integrated circuit comprises a T-shaped gate electrode including a Schottky gate electrode formed on a first region of a compound semiconductor substrate, a pair of ohmic electrodes making an ohmic contact with a surface of the substrate in the first region at respective sides of the T-shaped gate electrode, a lower capacitor electrode pattern formed on a second region of the compound semiconductor substrate with a composition substantially identical with a low-resistance, top electrode constituting the T-shaped gate electrode on the Schottky gate electrode, a dielectric film formed on the lower electrode pattern, and an upper electrode pattern formed on the dielectric film.
    Type: Application
    Filed: February 6, 2001
    Publication date: August 9, 2001
    Applicant: FUJITSU QUANTUM DEVICES LIMITED
    Inventor: Hajime Matsuda
  • Patent number: 6200838
    Abstract: In a compound semiconductor device constituting a field effect transistor having a buried p region 3, a channel region 4 is formed thin and highly doped by n-type impurity, and the buried p region 3 is formed shallowly and highly doped by p-type impurity to compensate the highly doped channel region 4. In order to prevent a leakage current between the highly doped buried p region 3 and a gate electrode 5, a low concentration p-type impurity region 2 is formed on both sides of the highly doped buried p region 3 to thus prevent a current flow via a portion other than a channel region. Accordingly, there can be provided the compound semiconductor device including an FET which is able to suppress both the deterioration in the pinch-off characteristic and the leakage current between neighboring elements due to p-type impurity conduction other than a channel in an FET which has a high concentration and thin active layer, while suppressing the short channel effect.
    Type: Grant
    Filed: July 21, 1999
    Date of Patent: March 13, 2001
    Assignee: Fujitsu Quantum Devices Limited
    Inventors: Kazutaka Inoue, Hajime Matsuda
  • Patent number: 6078071
    Abstract: A semiconductor device includes a gate structure formed on a substrate in which an LDD structure is formed, wherein gate structure includes a Schottky electrode making a Schottky contact with a channel region in the substrate, a low-resistance layer provided above the Schottky electrode, and a stress-relaxation layer interposed between the Schottky electrode and the stress-relaxation layer. The low-resistance layer and said stress-relaxation layer form an overhang structure with respect to the Schottky electrode.
    Type: Grant
    Filed: June 9, 1999
    Date of Patent: June 20, 2000
    Assignee: Fujitsu Quantum Devices Limited
    Inventor: Hajime Matsuda
  • Patent number: 6037245
    Abstract: A fabricating process of a semiconductor device includes the steps of forming a first photoresist layer on a surface of a substrate so as to cover a gate electrode on the substrate, forming a second photoresist layer on the fist photoresist layer with an increased sensitivity, forming a third photoresist layer on the second photoresist layer with a reduced sensitivity, forming an opening in a photoresist structure thus formed of the first through third photoresist layers such that the opening exposes the gate electrode and such that the opening has a diameter that increases gradually from the first photoresist layer to the second photoresist layer. Further, a low-resistance metal layer is deposited on the photoresist structure including the opening, such that the metal layer forms a low-resistance electrode on the gate electrode.
    Type: Grant
    Filed: June 28, 1999
    Date of Patent: March 14, 2000
    Assignee: Fujitsu Quantum Devices Limited
    Inventor: Hajime Matsuda
  • Patent number: 5879692
    Abstract: The invention provides a clathrate comprising a cyclodextrin or hydroxyalkylated cyclodextrin and, as included therein, dl-.alpha.-tocopheryl L-ascorbyl phosphate. In another aspect, the invention provides a dermal composition for external use, particularly a cosmetic composition. The composition is characterized by reduced foam production in aqueous solution and good stability against light.
    Type: Grant
    Filed: August 25, 1997
    Date of Patent: March 9, 1999
    Assignee: Senju Pharmaceutical Co., Ltd.
    Inventors: Yohei Hamano, Hajime Matsuda, Hideyuki Sumiyoshi
  • Patent number: 5871759
    Abstract: A cholesterol ester clathrate comprising a cholesterol ester included within a hydroxyalkylated cyclodextrin; a hydrous composition comprising a hydroxyalkylated cyclodextrin, a cholesterol ester and water; a hydrous composition comprising a hydroxyalkylated cyclodextrin, a cholesterol ester, a hydrous stabilizer, and water; a hydrous composition comprising a hydroxyalkylated cyclodextrin, a cholesterol ester, a clay mineral, and water; a cosmetic containing a hydrous composition; and processes for making the cholesterol ester clathrate and various hydrous compositions. The cholesterol ester clathrate exhibits an emulsifying effect and the hydrous compositions are excellent in water-holding capacity, hydration properties, and separation stability at a high temperature.
    Type: Grant
    Filed: February 27, 1997
    Date of Patent: February 16, 1999
    Assignee: Shiseido Co., Ltd.
    Inventors: Yohei Hamano, Akio Nasu, Takashi Minami, Takayuki Miyazaki, Noriko Tomita, Takashi Matsumoto, Yoshikazu Soyama, Kenzo Ito, Hajime Matsuda, Hideyuki Sumiyoshi
  • Patent number: 5447920
    Abstract: A cosmetic composition comprising an inclusion product having a slightly water-soluble component with a hydroxyalkylated cyclodextrin formulated therein.
    Type: Grant
    Filed: January 25, 1994
    Date of Patent: September 5, 1995
    Assignee: Shiseido Company Ltd.
    Inventors: Hajime Matsuda, Kenzo Ito, Akio Taki, Osamu Uejima
  • Patent number: 4589005
    Abstract: A charge transfer device in which a number of transfer electrodes, comprised of alternating main electrodes and auxiliary electrodes, are formed on but insulated from a channel region in a semiconductor substrate for transferring charges. The transfer electrodes are formed such that the sides of each of the electrodes which are transverse to the channel direction are concave in the direction of charge transfer. These concave sides produce an additional accelerating electric field which supplements the conventional fringing fields.
    Type: Grant
    Filed: June 2, 1983
    Date of Patent: May 13, 1986
    Assignee: NEC Corporation
    Inventors: Hajime Matsuda, Hiroshi Morito
  • Patent number: 3957969
    Abstract: A cosmetic stick having an excellent spreading property on human skin is prepared from a water-in-oil emulsion which comprises 1 to 50 weight % of water, 1 to 10 weight % of a polyhydroxy compound selected from glycerol, mannitol, dulcitol and carbohydrates, 1 to 5 weight % of an oleic acid esters of polyhydric alcohols and the balance consisting of a cosmetic base material.
    Type: Grant
    Filed: July 13, 1973
    Date of Patent: May 18, 1976
    Assignee: Shiseeido Co., Ltd.
    Inventors: Yoshio Fujiyama, Yoshihiro Kanda, Hajime Matsuda