Patents by Inventor Han-Din D. Liu

Han-Din D. Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low voltage avalanche photodiode with re-entrant mirror for silicon based photonic integrated circuits
    Patent number: 9761746
    Abstract: A low voltage APD is disposed at an end of a waveguide extending laterally within a silicon device layer of a PIC chip. The APD is disposed over an inverted re-entrant mirror co-located at the end of the waveguide to couple light by internal reflection from the waveguide to an under side of the APD. In exemplary embodiments, a 45°-55° facet is formed in the silicon device layer by crystallographic etch. In embodiments, the APD includes a silicon multiplication layer, a germanium absorption layer over the multiplication layer, and a plurality of ohmic contacts disposed over the absorption layer. An overlying optically reflective metal film interconnects the plurality of ohmic contacts and returns light transmitted around the ohmic contacts to the absorption layer for greater detector responsivity.
    Type: Grant
    Filed: March 11, 2013
    Date of Patent: September 12, 2017
    Assignee: Intel Corporation
    Inventors: Yimin Kang, Han-Din D. Liu, Ansheng Liu
  • LOW VOLTAGE AVALANCHE PHOTODIODE WITH RE-ENTRANT MIRROR FOR SILICON BASED PHOTONIC INTEGRATED CIRCUITS
    Publication number: 20140252411
    Abstract: A low voltage APD is disposed at an end of a waveguide extending laterally within a silicon device layer of a PIC chip. The APD is disposed over an inverted re-entrant mirror co-located at the end of the waveguide to couple light by internal reflection from the waveguide to an under side of the APD. In exemplary embodiments, a 45°-55° facet is formed in the silicon device layer by crystallographic etch. In embodiments, the APD includes a silicon multiplication layer, a germanium absorption layer over the multiplication layer, and a plurality of ohmic contacts disposed over the absorption layer. An overlying optically reflective metal film interconnects the plurality of ohmic contacts and returns light transmitted around the ohmic contacts to the absorption layer for greater detector responsivity.
    Type: Application
    Filed: March 11, 2013
    Publication date: September 11, 2014
    Inventors: Yimin Kang, Han-Din D. Liu, Ansheng Liu