Patents by Inventor Hans-Guenter Eckel
Hans-Guenter Eckel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160240644Abstract: A semiconductor device includes a first transistor structure including a first transistor body region of a first conductivity type located within a semiconductor substrate. At least part of the first transistor body region is located between a first source/drain region of the first transistor structure and a second source/drain region of the first transistor structure. The semiconductor device includes a second transistor structure including a second transistor body region of a second conductivity type located within the semiconductor substrate. At least part of the second transistor body region is located between a first source/drain region of the second transistor structure and a second source/drain region of the second transistor structure. At least part of the second source/drain region of the second transistor structure is located between a doping region comprising the second source/drain region of the first transistor structure and the second transistor body region.Type: ApplicationFiled: February 12, 2016Publication date: August 18, 2016Inventors: Marten Müller, Hans-Guenter Eckel
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Publication number: 20160233758Abstract: A multilevel converter has a plurality of series-connected sub modules, which each have at least one first switch, one second switch and one capacitor. Current is output by way of the capacitor during discharging phases and current is received or charging the capacitor during charging phases. At least one of the sub modules has two part-modules that are galvanically connected to each other or are formed by two part-modules that are galvanically connected to each other. Each has a first switch, a second switch and a capacitor, and a first and a second part-module terminal. The galvanic connection between the two part-modules includes at least one inductive element.Type: ApplicationFiled: September 8, 2014Publication date: August 11, 2016Inventor: HANS-GUENTER ECKEL
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Patent number: 9412853Abstract: A protective device for a voltage-controlled semiconductor switch has a gate connection, a power emitter connection, an auxiliary emitter connection and a collector connection. The semiconductor switch can switch a current between the collector connection and the power emitter connection. A voltage-limiting device limits the voltage between the gate connection and the power emitter connection. A deactivation device is connected to the voltage-limiting device and deactivates the voltage-limiting device during a switch-on of the semiconductor switch.Type: GrantFiled: November 7, 2011Date of Patent: August 9, 2016Assignee: SIEMENS AKTIENGESELLSCHAFTInventors: Hans-Günter Eckel, Steffen Pierstorf
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Publication number: 20160190846Abstract: A multilevel converter has a central device for controlling operations and a plurality of series-connected sub modules that each has a first switch, a second switch, and a capacitor. At least two of the sub modules form a multi module, wherein, in charging phases and in discharging phases of the multi module, one of the switches of each sub module is switched off and the other switch of each sub module is switched on. The multi module has a control device that is connected to the central device and undertakes control of the sub modules of the multi module on the basis of control signals from the central device. The control device is configured such that it monitors the capacitor voltages of the sub modules and, in the event of an imbalance in the capacitor voltages, brings about balancing.Type: ApplicationFiled: August 15, 2013Publication date: June 30, 2016Inventor: HANS-GÜNTER ECKEL
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Publication number: 20160181948Abstract: The invention relates to a active-neutral point clamped converter having at least one half-bridge circuit connected into a DC voltage circuit. Each half-bridge circuit has a high-potential-side input half-bridge and a low-potential-side input half-bridge in series. The half-bridge circuit further has an output half-bridge connected between center taps of the input half-bridges. The total inductance within the output half-bridges and between the three half-bridges is dimensioned such that if any of the power semiconductors of the half-bridge circuit fails, a short-circuit can be reliably disconnected via a shorted circuit formed between the three half-bridges of the half-bridge circuit by the intact power semiconductors in said shorted circuit.Type: ApplicationFiled: July 8, 2014Publication date: June 23, 2016Applicant: SIEMENS AKTIENGESELLSCHAFTInventor: Hans-Günter ECKEL
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Publication number: 20160094128Abstract: An intermediate voltage circuit current converter having two current converter sections arranged in series on the direct voltage side is disclosed. The current converter section has a capacitor connected in parallel with two bridge modules that are connected in series with each other. The output of the current converter section is located on the series connection between the two bridge modules and the outputs of the two current converter sections are connected to a further bridge module. Each bridge modules comprises a series connection of two power semiconductor units. The intermediate potentials on the connection between the two power semiconductor units in each of the bridge modules are electrically connected to one another by a further capacitor, and the intermediate potential of the further bridge module provides the phase connection of the intermediate voltage circuit current converter for a given phase of the intermediate voltage circuit current converter.Type: ApplicationFiled: September 29, 2015Publication date: March 31, 2016Applicant: Siemens AktiengesellschaftInventors: Hans-Günter Eckel, Sidney Gierschner
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Patent number: 9263933Abstract: The invention relates to a method for commutating from a reverse-conducting IGBT (T1) operated in the diode mode to a reverse-conducting IGBT (T2) operated in the IGBT mode. According to the invention the reverse-conducting IGBT (T1) operated in the diode mode is turned off only at the instant a current starts to flow in the reverse-conducting IGBT (T2) operated in the IGBT mode. Accordingly said commutation method is event-driven, as a result of which it is less sensitive to poorly toleranced operating times.Type: GrantFiled: May 17, 2010Date of Patent: February 16, 2016Assignee: SIEMENS AKTIENGESELLSCHAFTInventor: Hans-Günter Eckel
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Patent number: 9263969Abstract: A submodule for a high-voltage converter with reduced risk of cross-ignition includes first and second series-connected energy storage devices, first and second semiconductor series circuits connected in parallel with the energy storage devices, respectively, and having first and second, and respectively third and fourth, switched power semiconductor switching units. A first terminal connects to a first potential point between the first and second switching units, a second terminal connects to a second potential point between the third and fourth switching units. A connecting switching unit is connected between the first and second semiconductor series circuits. A first connecting branch with a first diode connects the first potential point and the potential point between the energy storage devices. A second connecting branch with a second diode connects the second potential point and the potential point between the energy storage devices.Type: GrantFiled: June 11, 2010Date of Patent: February 16, 2016Assignee: SIEMENS AKTIENGESELLSCHAFTInventors: Hans-Günter Eckel, Herbert Gambach
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Publication number: 20150318690Abstract: A submodule for a modular multistage converter contains a first and a second connection terminal, an energy store, and a power semiconductor circuit which is connected to the energy store such that the voltage dropping at the energy store can be generated at the connection terminals in a first switch state and a zero voltage can be generated at the connection terminals in a second switch state. The aim is to provide such a submodule which allows an inexpensive submodule housing to be used while maintaining the same energy storage capacity or which allows an increased energy storage capacity while using the same housing without thereby undermining the protection provided by the submodule housing. This is achieved in that the power semiconductor circuit is connected in parallel to an energy storage branch in which the energy store and a device for limiting a surge current are arranged.Type: ApplicationFiled: December 10, 2012Publication date: November 5, 2015Applicant: SIEMENS AKTIENGESELLSCHAFTInventors: HANS-GUENTER ECKEL, HERBERT GAMBACH, FRANK SCHREMMER, MARCUS WAHLE
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Publication number: 20150145330Abstract: A device for load flow control of a direct current in a branch of a direct current voltage network node having a longitudinal voltage source which has a coupling device for connection or disconnection of electrical power. The coupling device for connection and disconnection of electrical power are connected to a coupling device for connection and disconnection of electric power of a further load flow control device which is disposed in another branch of the same direct current voltage network node. Thus the device can be used economically and flexibly for control of a load flow on or in a network node.Type: ApplicationFiled: June 19, 2012Publication date: May 28, 2015Applicant: SIEMENS AKTIENGELLSCHAFTInventor: Hans-Guenter Eckel
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Publication number: 20140362628Abstract: A submodule for a modular multilevel converter has at least one unipolar energy storage device, first and second connection terminals and a power semiconductor circuit with power semiconductor switches that are driven with a control signal and freewheeling diodes connected in parallel with an assigned power semiconductor switch in the opposite sense. Depending on the driving of the power semiconductor switches, the voltage across the energy storage device(s) or else a zero voltage can be generated between the first and second connection terminals. The power semiconductor circuit forms a bridging branch between the potential points of the first and second connection terminals. Only the power semiconductor switches in the bridging branch are reverse conductive power semiconductor switches. The submodule has low on-state losses during normal operation and is also cost-effective.Type: ApplicationFiled: March 14, 2012Publication date: December 11, 2014Inventor: Hans-Guenter Eckel
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Publication number: 20140320198Abstract: A protective device for a voltage-controlled semiconductor switch has a gate connection, a power emitter connection, an auxiliary emitter connection and a collector connection. The semiconductor switch can switch a current between the collector connection and the power emitter connection. A voltage-limiting device limits the voltage between the gate connection and the power emitter connection. A deactivation device is connected to the voltage-limiting device and deactivates the voltage-limiting device during a switch-on of the semiconductor switch.Type: ApplicationFiled: November 7, 2011Publication date: October 30, 2014Applicant: SIEMENS AKTIENGESELLSCHAFTInventors: Hans-Günter Eckel, Steffen Pierstorf
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Patent number: 8854109Abstract: A method for controlling two electrically series-connected reverse-conductive (RC) IGBTs (RC-IBGT) of a half bridge is disclosed, wherein an operating DC voltage is applied across the series connection and one of the two series-connected reverse-conductive IGBTs operates in IGBT mode and another of the two series-connected reverse-conductive IGBTs operates in diode mode, and wherein each of the two reverse-conductive IGBTs has three switching states “+15V”, “0V”, “?15V”. The RC-IGBT T1 operated in diode mode does not go into the switching state (?15V) of highly charged carrier concentration, but instead into a state of medium charge carrier concentration associated with the switching state “0V”, and not into the switching state “?15V”, as is known from conventional methods. This reduces the reverse-recovery without adversely affecting the forward voltage.Type: GrantFiled: January 13, 2012Date of Patent: October 7, 2014Assignee: Siemens AktiengesellschaftInventor: Hans-Günter Eckel
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Publication number: 20130321062Abstract: A method for controlling two electrically series-connected reverse-conductive (RC) IGBTs (RC-IBGT) of a half bridge is disclosed, wherein an operating DC voltage is applied across the series connection and one of the two series-connected reverse-conductive IGBTs operates in IGBT mode and another of the two series-connected reverse-conductive IGBTs operates in diode mode, and wherein each of the two reverse-conductive IGBTs has three switching states “+15V”, “0V”, “?15V”. The RC-IGBT T1 operated in diode mode does not go into the switching state (?15V) of highly charged carrier concentration, but instead into a state of medium charge carrier concentration associated with the switching state “0V”, and not into the switching state “?15V”, as is known from conventional methods. This reduces the reverse-recovery without adversely affecting the forward voltage.Type: ApplicationFiled: January 13, 2012Publication date: December 5, 2013Applicant: Siemens AktiengesellschaftInventor: Hans-Günter Eckel
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Patent number: 8415747Abstract: A semiconductor device includes a cathode and an anode. The anode includes a first p-type semiconductor anode region and a second p-type semiconductor anode region. The first p-type semiconductor anode region is electrically connected to an anode contact area. The second p-type semiconductor anode region is electrically coupled to the anode contact area via a switch configured to provide an electrical connection or an electrical disconnection between the second p-type anode region and the anode contact area.Type: GrantFiled: December 28, 2010Date of Patent: April 9, 2013Assignee: Infineon Technologies Austria AGInventors: Hans-Günter Eckel, Jörg Schumann
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Publication number: 20130082534Abstract: A submodule for a high-voltage converter with reduced risk of cross-ignition includes first and second series-connected energy storage devices, first and second semiconductor series circuits connected in parallel with the energy storage devices, respectively, and having first and second, and respectively third and fourth, switched power semiconductor switching units. A first terminal connects to a first potential point between the first and second switching units, a second terminal connects to a second potential point between the third and fourth switching units. A connecting switching unit is connected between the first and second semiconductor series circuits. A first connecting branch with a first diode connects the first potential point and the potential point between the energy storage devices. A second connecting branch with a second diode connects the second potential point and the potential point between the energy storage devices.Type: ApplicationFiled: June 11, 2010Publication date: April 4, 2013Applicant: SIEMENS AKTIENGESELLSCHAFTInventors: Hans-Günter Eckel, Herbert Gambach
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Publication number: 20120161224Abstract: A semiconductor device includes a cathode and an anode. The anode includes a first p-type semiconductor anode region and a second p-type semiconductor anode region. The first p-type semiconductor anode region is electrically connected to an anode contact area. The second p-type semiconductor anode region is electrically coupled to the anode contact area via a switch configured to provide an electrical connection or an electrical disconnection between the second p-type anode region and the anode contact area.Type: ApplicationFiled: December 28, 2010Publication date: June 28, 2012Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Hans-Günter Eckel, Jörg Schumann
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Publication number: 20120092912Abstract: The invention relates to a method for commutating from a reverse-conducting IGBT (T1) operated in the diode mode to a reverse-conducting IGBT (T2) operated in the IGBT mode. According to the invention the reverse-conducting IGBT (T1) operated in the diode mode is turned off only at the instant a current starts to flow in the reverse-conducting IGBT (T2) operated in the IGBT mode. Accordingly said commutation method is event-driven, as a result of which it is less sensitive to poorly toleranced operating times.Type: ApplicationFiled: May 17, 2010Publication date: April 19, 2012Applicant: Siemens AktiengesellschaftInventor: Hans-Günter Eckel
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Patent number: 7582939Abstract: The invention relates to a semiconductor diode, an electronic component and to a voltage source converter. According to the invention, the semiconductor diode having at least one pn-transition can be switched between a first state and a second state. In comparison to the first state, the second state has a greater on-state resistance and a smaller accumulated charge, and the pn-transition is capable of blocking both in the first state as well as in the second state with at least one predetermined blocking ability. An MOS-controlled diode is hereby obtained in which the transition from the on-state to the blocking state is simplified and is thus not critical with regard to the temporal sequence of the control pulses.Type: GrantFiled: February 18, 2004Date of Patent: September 1, 2009Assignee: Siemens AktiengesellschaftInventors: Mark-Matthias Bakran, Hans-Günter Eckel
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Patent number: 7480160Abstract: A traction current converter includes a line-side four-quadrant converter which is provided with turn-off power semiconductors that are implemented as current converter valves. Each of the power semiconductors is connected electrically back-to-back in parallel to a corresponding power diode. A regulating device has an output side which is connected to control terminals of the power semiconductors. Each of the power diodes is implemented as controllable power diode which can be connected on the control system side to a corresponding diode control device having an input side which is connected to control outputs of the regulating device. In this way, the four-quadrant converter of a traction current converter can be reliably operated without having to use power semiconductor modules with enlarged diode chip surface.Type: GrantFiled: July 20, 2005Date of Patent: January 20, 2009Assignee: Siemens AktiengesellschaftInventors: Mark-Matthias Bakran, Hans-Günter Eckel