Patents by Inventor Hans-Joerg Pfleiderer

Hans-Joerg Pfleiderer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4358786
    Abstract: Video signals are stored on a continuously movable magnetic tape with a dissection of the video signals into a plurality of partial signals and simultaneously recording the partial signals in a plurality of longitudinal tracks which extend parallel to one another. Inasmuch as mutual influences of the individual image formation to be stored are to be reduced, even given a great recording density, the signal lines of the video signal are employed as partial signals, whereby the line signals belonging to a television image are combined to at least one group and are successively recorded in groups. All line signals belonging to one and the same group are simultaneously recorded on a plurality of longitudinal tracks after an intermediate storage. The invention finds particular application in video recorders having longitudinal track recording.
    Type: Grant
    Filed: July 11, 1979
    Date of Patent: November 9, 1982
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hans-Joerg Pfleiderer, Karl-Ulrich Stein, Michael Koubek, Hans-Martin Christiansen
  • Patent number: 4349749
    Abstract: An integrated circuit for transferring complementary charge packets between a first and second charge transfer device has a resettable gate common to both charge transfer devices which serves as a transfer electrode for the first charge transfer device and as an electrode in the input stage of the second charge transfer device. An electrode which is maintained at a constant voltage is disposed in the second charge transfer device between the common electrode and an oppositely doped semiconductor region which is connected to a normally constant voltage which periodically is substantially reduced, thereby flooding the region beneath the common electrode with charge carriers. When the voltage connected to the oppositely doped semiconductor region is returned to a high value, a potential well is created beneath the constant voltage electrode which becomes filled with a first charge packet.
    Type: Grant
    Filed: July 11, 1980
    Date of Patent: September 14, 1982
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hans-Joerg Pfleiderer, Heiner Klar
  • Patent number: 4334151
    Abstract: A circuit for sensor-controlled distance measurement with two linear image sensors is disclosed. These sensors are exposed to lines corresponding to two images derived from one object. The sensor signals are subjected to correlation measurements, from which the range of the object is determined. An exposure-measuring circuit determines the optimum integration time of the sensor elements. A comparing sensor element of the exposure-measuring circuit is provided in a strip-shape and co-integrated on the semiconductor member. It is positioned for exposure to an optically generated charge quantity which corresponds to a plurality of sensor elements in at least one of the image sensors. The comparison sensor element is designed as a strip-shaped photodiode arranged next to the sensor element row in at least one of the image sensors.
    Type: Grant
    Filed: July 11, 1980
    Date of Patent: June 8, 1982
    Assignee: Siemens Aktiengesellschaft
    Inventors: Heiner Herbst, Hans-Joerg Pfleiderer, Hans-Peter Grassl
  • Patent number: 4334150
    Abstract: A circuit for sensor-controlled distance measurement with two linear image sensors is disclosed. These sensors are exposed to lines corresponding to two images derived from one object. The sensor signals are subjected to correlation measurements, from which the range of the object is determined. An exposure-measuring circuit determines the optimum integration time of the sensor elements. In the case of such circuits, one sets as exact a distance measurement as possible. For this purpose, comparing sensor elements of the exposure-measuring circuit, which are provided with a mean value of the exposure of many sensor locations, are designed such that they extend only over a part of the sensor lines. They are arranged in a sequence which runs along the entire sensor line. A separate controlling of the optimum integration time proceeds over individual line portions. A range of application for the invention encompasses photographic and electronic cameras.
    Type: Grant
    Filed: July 11, 1980
    Date of Patent: June 8, 1982
    Assignee: Siemens Aktiengesellschaft
    Inventors: Heiner Herbst, Hans-Joerg Pfleiderer, Hans-Peter Grassl
  • Patent number: 4314163
    Abstract: The invention relates to an input stage for a charge transfer device (CTD) arrangement which contains a source zone in a semiconductor body, two input electrodes, and a transfer gate, wherein one input gate is connected to a fixed voltage, and the other input gate is supplied with an analog input signal. In input stages of this kind, it is endeavored to evaluate the input signal within the widest possible limits without the need of altering the assigned semiconductor surface. The invention achieves this aim in that the input stage is divided into two input channels which possess different widths and which open into the CTD channel. A positive evaluation of the input signal is carried out via the first input channel, whereas a negative evaluation is carried out via the second input channel. The difference in area between the second input gate electrodes of the two input channels represents a gauge of the evaluation coefficient and can be kept very small.
    Type: Grant
    Filed: December 22, 1980
    Date of Patent: February 2, 1982
    Assignee: Siemens Aktiengesellschaft
    Inventors: Karl Knauer, Hans-Joerg Pfleiderer
  • Patent number: 4251785
    Abstract: The invention relates to an integrated filter circuit including a charge transfer device (CTD) transversal filter to which a sample-and-hold stage is post-connected. In such filters, a smoothing of the step-shaped signal output voltage emitted from the said stage is strived for. According to the invention, the smoothing ensues by means of a RC low pass which is realized by means of a "switched capacitor" circuit. This has two capacitors and two alternatively actuatable, electronic switches. The area of employment of the invention particularly embraces CTD transversal filters which are employed in systems with varying clock pulse frequencies.
    Type: Grant
    Filed: June 22, 1979
    Date of Patent: February 17, 1981
    Assignee: Siemens Aktiengesellschaft
    Inventor: Hans-Joerg Pfleiderer
  • Patent number: 4246553
    Abstract: This invention relates to an integrated filter circuit with a charge transfer device transversal filter and a further low-pass filter pre-connected to the transversal filter. The pre-connected filter includes a first capacitor and a second, significantly smaller capacitor, as well as two alternately actuable electronic switches.
    Type: Grant
    Filed: June 22, 1979
    Date of Patent: January 20, 1981
    Assignee: Siemens Aktiengesellschaft
    Inventor: Hans-Joerg Pfleiderer
  • Patent number: 4233527
    Abstract: An opto-electronic sensor has at least one light-permeable electrically insulating layer carried on a surface of a substrate of doped semiconductor material. The insulating layer carries a number of electrodes arranged in the form of a matrix of lines and columns in which at least one line is present with at least two electrodes. The electrodes belonging to a line are electrically interconnected with each other. A buried channel is present in the substrate below each column and is doped opposite to the doping of the substrate. Each buried channel is connected, by way of a respective on-off switch, to the input of a voltage amplifier whose input capacitance is smaller than the capacitance of each individual buried channel and whose input resistance is so great that the time constant determined by the input resistance and the capacitance of a buried channel is greater than 10 nsec.
    Type: Grant
    Filed: June 16, 1976
    Date of Patent: November 11, 1980
    Assignee: Siemens Aktiengesellschaft
    Inventors: Rudolf Koch, Hans-Joerg Pfleiderer
  • Patent number: 4231002
    Abstract: A transversal filter is disclosed in which the stages of an analog charge transfer device shift register, integrated on a doped semiconductor substrate, are provided with parallel inputs and evaluation circuits preconnected to the parallel inputs. The evaluation circuits respectively exhibit an area doped opposite to the substrate, a first input gate and a second input gate and a transfer gate, whereby the transfer gate is arranged immediately next to the transfer channel of the charge transfer device shift register. The one input gate is connected to an input signal, the other input gate is connected to a constant direct voltage, the oppositely doped area is connected to a first clock pulse voltage and the transfer gate is connected with a second clock pulse voltage. The output signal can be tapped at an output of the charge transfer device shift register. Comparators are provided having first inputs connected with a counter which is loaded with clock pulses and second inputs connected with digital memories.
    Type: Grant
    Filed: March 5, 1979
    Date of Patent: October 28, 1980
    Assignee: Siemens Aktiengesellschaft
    Inventors: Karl Knauer, Hans-Joerg Pfleiderer
  • Patent number: 4200848
    Abstract: A transversal filter has at least one analog shift register which includes a number of parallel inputs and one series output. A further number of individual, predeterminable evaluator circuits are provided, each evaluator circuit having at least one signal input for the input of the signal to be filtered and at least one output, and each evaluator circuit comprises a pair of capacitors arranged on a surface of a substrate. The substrate has at least one substrate terminal and comprises doped semiconductor material which carries a first insulating layer or blocking layer capacitor which contacts an oppositely doped zone located on the surface of the substrate and which is provided with a terminal contact. A second insulating layer or blocking layer capacitor is arranged beside the first capacitor, the second capacitor connectible, via a switching element, to an associated parallel input.
    Type: Grant
    Filed: May 18, 1978
    Date of Patent: April 29, 1980
    Assignee: Siemens Aktiengesellschaft
    Inventors: Karl Knauer, Hans-Joerg Pfleiderer
  • Patent number: 4163957
    Abstract: In illustrated embodiments, at least one analogue shift register has a number of parallel inputs and one series output. A number of individual evaluating circuits receive the signal to be filtered and supply respective output quantities of charge equal to the product of the difference between the relevant signal value and a predetermined minimum or maximum value, and a respective individual evaluation factor. The output of each evaluating circuit can be connected via a switching element to an associated parallel input. The capacity of every storage position of the shift register is at least such that it is always able to accommodate the maximum quantity of charge supplied by the preceding storage position, and when the storage position has a parallel input, can additionally accommodate the maximum quantities of charge supplied by the associated evaluating circuit (s). Various modifications are disclosed for reducing the space requirement of a transversal filter when implemented, for example, as a CCD.
    Type: Grant
    Filed: September 12, 1977
    Date of Patent: August 7, 1979
    Assignee: Siemens Aktiengesellschaft
    Inventors: Karl Knauer, Max Schlichte, Hans-Joerg Pfleiderer
  • Patent number: 4131810
    Abstract: An opto-electronic sensor has a light-permeable electrically insulating layer arranged on a thin layer of doped semiconductor material having at least one connection contact to form a charge-coupled transmission device including at least one row of electrodes carried on the light-permeable, electrically insulating layer, the electrodes being separated from one another by gaps. The entire rear surface of the thin layer of doped semiconductor material carries at least one light-permeable, electrically insulating layer which, over the entire area thereof, carries a rear electrode consisting of light-permeable, electrically conductive material.
    Type: Grant
    Filed: June 10, 1976
    Date of Patent: December 26, 1978
    Assignee: Siemens Aktiengesellschaft
    Inventors: Karl Knauer, Hans-Joerg Pfleiderer
  • Patent number: 4064491
    Abstract: An information memory for storing information in the form of electric charge carriers has at least one dynamic storage element which is arranged upon a surface of at least one substrate made of semiconductor material and doped with a given basic type doping. The substrate connection is included and the memory comprises at least one MIS capacitor. Upon the substrate surface at least one electrically insulating layer is present which carries at least one capacitor electrode. The dynamic storage element comprises the MIS capacitor or an adjacent arrangement of several MIS capacitors, separated from one another by, at the most, narrow distances and comprises at least one contact area at the substrate surface which is provided with an externally accessible ohmic terminal contact, and which contacts at least the margin of the MIS capacitor or t least one of the MIS capacitors, nd which contains material having the basic type of doping.
    Type: Grant
    Filed: September 15, 1976
    Date of Patent: December 20, 1977
    Assignee: Siemens Aktiengesellschaft
    Inventors: Karl Knauer, Hans Joerg Pfleiderer
  • Patent number: 4031315
    Abstract: An image sensor has image elements arranged in matrix form. Each of the elements possesses a pair of electrode arrangements comprising a first and a second electrode arrangement. The elements are photosensitive and form charge coupled shift registers in rows and columns. The first electrode arrangement of the pairs of electrode arrangements is, in each case, connected to a first control line and a second electrode arrangement of the pairs of electrode arrangements is connected to a second control line, the two control lines of a row or column may be connected by way of switches to drive lines and the switches may be operated by drive registers. The image sensor has output coupling devices for row-by-row and column-by-column output coupling.
    Type: Grant
    Filed: September 9, 1975
    Date of Patent: June 21, 1977
    Assignee: Siemens Aktiengesellschaft
    Inventor: Hans-Joerg Pfleiderer
  • Patent number: 3987313
    Abstract: An arrangement for generating pulse trains for charged-coupled circuits employs a plurality of series-connected master-slave JK flip-flop circuits in which a Q output of a flip-flop circuit is connected to a J input of the following flip-flop circuit and in which a terminal for obtaining the generated timing pulses is provided at each Q output of a flip-flop circuit. A pulse train input for providing timing pulses to the flip-flop circuits and for each flip-flop circuit an NAND gate is provided whose output is connected to the clear input of the flip-flop circuit. One input of the NAND gate is connected to the timing pulse input line and another input is connected to a Q output of the following flip-flop circuit, except for the last flip-flop circuit in which the other input of the NAND gate associated therewith is connected to the Q output of the first flip-flop circuit.
    Type: Grant
    Filed: December 30, 1974
    Date of Patent: October 19, 1976
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hans-Joerg Pfleiderer, Karl Knauer