Abstract: The present invention relates to a method for etching lithium niobate, the method including a process of etching lithium niobate using a mask pattern as a physical dry etching method using Ar plasma produced in a chamber through Ar gas, wherein in the process of etching lithium niobate, a process pressure of the chamber is maintained at 1 mTorr to 20 mTorr, and a method for forming a lithium niobate pattern using the same.

Abstract: Disclosed herein is a method of determining a concentration of a subject based on fraction bound measurement. The method of determining a concentration of a subject based on fraction bound measurement may include fixing a ligand to a surface of an optical device, measuring a fraction bound of a subject to be detected based on an optical signal when the subject reacts to the ligand fixed to the surface of the optical device, and determining a relative value of a concentration of the subject based on a ratio of measured values of the fraction bounds of the subject and a reference signal.

Abstract: The present invention relates to an optical device comprising a first sub-chip and a second sub-chip flipped over on the first sub-chip. The first sub-chip includes a first substrate, a first lower cladding pattern on a first surface of the first substrate, and a first core layer on the first lower cladding pattern. The second sub-chip includes a second substrate, a second lower cladding pattern on a second surface of the second substrate, and a second core layer on the second lower cladding pattern. The first surface of the first substrate faces the second surface of the second substrate. The first lower cladding pattern has a first top surface parallel to the first surface and a first sidewall inclined to the first surface. The first core layer includes a first core part on the first top surface and a first side part on the first sidewall.

Abstract: Disclosed herein is a method of determining a concentration of a subject based on fraction bound measurement. The method of determining a concentration of a subject based on fraction bound measurement may include fixing a ligand to a surface of an optical device, measuring a fraction bound of a subject to be detected based on an optical signal when the subject reacts to the ligand fixed to the surface of the optical device, and determining a relative value of a concentration of the subject based on a ratio of measured values of the fraction bounds of the subject and a reference signal.

Abstract: The present invention relates to an optical device comprising a first sub-chip and a second sub-chip flipped over on the first sub-chip. The first sub-chip includes a first substrate, a first lower cladding pattern on a first surface of the first substrate, and a first core layer on the first lower cladding pattern. The second sub-chip includes a second substrate, a second lower cladding pattern on a second surface of the second substrate, and a second core layer on the second lower cladding pattern. The first surface of the first substrate faces the second surface of the second substrate. The first lower cladding pattern has a first top surface parallel to the first surface and a first sidewall inclined to the first surface. The first core layer includes a first core part on the first top surface and a first side part on the first sidewall.

Abstract: A microwave-frequency source at frequency fM comprises: a dual optical-frequency reference source, an electro-optic sideband generator, an optical bandpass filter, an optical detector, a reference oscillator, an electrical circuit, and a voltage-controlled oscillator (VCO). The sideband generator modulates dual optical reference signals at v2 and v1 to generate sideband signals at v1±n1fM and v2±n2fM. The bandpass filter transmits sideband signals at v1+N1fM and v2?N2fM. The optical detector generates a beat note at (v2?N2fM)?(v1+N1fM). The beat note and a reference oscillator signal are processed by the circuit to generate a loop-filtered error signal to input to the VCO. Output of the VCO at fM drives the sideband generator and forms the microwave-frequency output signal. The resultant frequency division results in reduced phase noise on the microwave-frequency signal.

Abstract: A microwave-frequency source at frequency fM comprises: a dual optical-frequency reference source, an electro-optic sideband generator, an optical bandpass filter, an optical detector, a reference oscillator, an electrical circuit, and a voltage-controlled oscillator (VCO). The sideband generator modulates dual optical reference signals at v2 and v1 to generate sideband signals at v1±n1fM and v2±n2fM. The bandpass filter transmits sideband signals at v1+N1fM and v2?N2fM. The optical detector generates a beat note at (v2?N2fM)?(v1+N1fM). The beat note and a reference oscillator signal are processed by the circuit to generate a loop-filtered error signal to input to the VCO. Output of the VCO at fM drives the sideband generator and forms the microwave-frequency output signal. The resultant frequency division results in reduced phase noise on the microwave-frequency signal.

Abstract: A microwave-frequency source at frequency fM comprises: a dual optical-frequency reference source, an electro-optic sideband generator, an optical bandpass filter, an optical detector, a reference oscillator, an electrical circuit, and a voltage-controlled oscillator (VCO). The sideband generator modulates dual optical reference signals at v2 and v1 to generate sideband signals at v1±n1fM and v2±n2fM. The bandpass filter transmits sideband signals at v1+N1fM and v2?N2fM. The optical detector generates a beat note at (v2?N2fM)?(v1+N1fM). The beat note and a reference oscillator signal are processed by the circuit to generate a loop-filtered error signal to input to the VCO. Output of the VCO at fM drives the sideband generator and forms the microwave-frequency output signal. The resultant frequency division results in reduced phase noise on the microwave-frequency signal.

Abstract: A highly-coherent chip-based laser generating system includes a disk resonator incorporating a wedge structure fabricated from a silicon dioxide layer of a chip. The disk resonator is operable to generate a highly-coherent laser from a low-coherence optical pump input provided at an optical power level as low as 60 ?W. The disk resonator is fabricated with sub-micron cavity size control that allows generation of a highly-coherent laser using a controllable Stimulated Brillouin Scattering process that includes matching of a cavity free-spectral-range to a Brillouin shift frequency in silica. While providing several advantages due to fabrication on a chip, the highly-coherent laser produced by the disk resonator may feature a Schawlow-Townes noise level as low as 0.06 Hz2/Hz (measured with the coherent laser at a power level of about 400 ?W) and a technical noise that is at least 30 dB lower than the low-coherence optical pump input.

Abstract: A highly-coherent chip-based laser generating system includes a disk resonator incorporating a wedge structure fabricated from a silicon dioxide layer of a chip. The disk resonator is operable to generate a highly-coherent laser from a low-coherence optical pump input provided at an optical power level as low as 60 ?W. The disk resonator is fabricated with sub-micron cavity size control that allows generation of a highly-coherent laser using a controllable Stimulated Brillouin Scattering process that includes matching of a cavity free-spectral-range to a Brillouin shift frequency in silica. While providing several advantages due to fabrication on a chip, the highly-coherent laser produced by the disk resonator may feature a Schawlow-Townes noise level as low as 0.06 Hz2/Hz (measured with the coherent laser at a power level of about 400 ?W) and a technical noise that is at least 30 dB lower than the low-coherence optical pump input.

Abstract: A microwave-frequency source at frequency fM comprises: a dual optical-frequency reference source, an electro-optic sideband generator, an optical bandpass filter, an optical detector, a reference oscillator, an electrical circuit, and a voltage-controlled oscillator (VCO). The sideband generator modulates dual optical reference signals at v2 and v1 to generate sideband signals at v1±n1fM and v2±n2fM. The bandpass filter transmits sideband signals at v1+N1fM and v2?N2fM. The optical detector generates a beat note at (v2?N2fM)?(v1+N1fM). The beat note and a reference oscillator signal are processed by the circuit to generate a loop-filtered error signal to input to the VCO. Output of the VCO at fM drives the sideband generator and forms the microwave-frequency output signal. The resultant frequency division results in reduced phase noise on the microwave-frequency signal.

Abstract: A frequency comb generator fabricated on a chip with elimination of a disadvantageous reflow process, includes an ultra-high Q disk resonator having a waveguide that is a part of a wedge structure fabricated from a silicon dioxide layer of the chip. The disk resonator allows generation of a frequency comb with a mode spacing as low as 2.6 GHz and up to 220 GHz. A surface-loss-limited behavior of the disk resonator decouples a strong dependence of pumping threshold on repetition rate.

Abstract: A highly-coherent chip-based laser generating system includes a disk resonator incorporating a wedge structure fabricated from a silicon dioxide layer of a chip. The disk resonator is operable to generate a highly-coherent laser from a low-coherence optical pump input provided at an optical power level as low as 60 ?W. The disk resonator is fabricated with sub-micron cavity size control that allows generation of a highly-coherent laser using a controllable Stimulated Brillouin Scattering process that includes matching of a cavity free-spectral-range to a Brillouin shift frequency in silica. While providing several advantages due to fabrication on a chip, the highly-coherent laser produced by the disk resonator may feature a Schawlow-Townes noise level as low as 0.06 Hz2/Hz (measured with the coherent laser at a power level of about 400 ?W) and a technical noise that is at least 30 dB lower than the low-coherence optical pump input.

Abstract: A frequency comb generator fabricated on a chip with elimination of a disadvantageous reflow process, includes an ultra-high Q disk resonator having a waveguide that is a part of a wedge structure fabricated from a silicon dioxide layer of the chip. The disk resonator allows generation of a frequency comb with a mode spacing as low as 2.6 GHz and up to 220 GHz. A surface-loss-limited behavior of the disk resonator decouples a strong dependence of pumping threshold on repetition rate.

Abstract: A frequency comb generator fabricated on a chip with elimination of a disadvantageous reflow process, includes an ultra-high Q disk resonator having a waveguide that is a part of a wedge structure fabricated from a silicon dioxide layer of the chip. The disk resonator allows generation of a frequency comb with a mode spacing as low as 2.6 GHz and up to 220 GHz. A surface-loss-limited behavior of the disk resonator decouples a strong dependence of pumping threshold on repetition rate.

Abstract: An optical apparatus comprises a waveguide substrate and an optical reference cavity. The optical reference cavity comprises an optical waveguide formed on the waveguide substrate and arranged to form a closed loop greater than or about equal to 10 cm in length. The RMS resonance frequency fluctuation is less than or about equal to 100 Hz. The Q-factor can be greater than or about equal to 108. The optical waveguide can exhibit optical loss less than or about equal to 0.2 dB/m for propagation of an optical signal along the optical waveguide. The closed loop path can comprise two or more linked spirals greater than or about equal to 1 meter in length and can occupy an area on the waveguide substrate less than or about equal to 5 cm2.

Abstract: A method of manufacturing a waveguide eliminates a prior art reflow step and introduces certain new steps that permit fabricating of an ultra-low loss waveguide element on a silicon chip. The ultra-low loss waveguide element may be adapted to fabricate a number of devices, including a wedge resonator and a ultra-low loss optical delay line having an extended waveguide length.

Abstract: A frequency comb generator fabricated on a chip with elimination of a disadvantageous reflow process, includes an ultra-high Q disk resonator having a waveguide that is a part of a wedge structure fabricated from a silicon dioxide layer of the chip. The disk resonator allows generation of a frequency comb with a mode spacing as low as 2.6 GHz and up to 220 GHz. A surface-loss-limited behavior of the disk resonator decouples a strong dependence of pumping threshold on repetition rate.

Abstract: A method of manufacturing a waveguide eliminates a prior art reflow step and introduces certain new steps that permit fabricating of an ultra-low loss waveguide element on a silicon chip. The ultra-low loss waveguide element may be adapted to fabricate a number of devices, including a wedge resonator and a ultra-low loss optical delay line having an extended waveguide length.