Abstract: Systems and methods which provide low-loss dielectric microstrip line (DML) circuits for use with respect to signals in the terahertz frequency range are described. Low-loss DML integrated circuits of embodiments, such as may comprise DML transmission lines, DML couplers, DML crossovers, etc., may be based on silicon technology and are adapted for signal frequencies in the range of 750-925 GHz. A DML circuit implementation may be comprised of silicon on insulator based DML structure having a silicon dioxide (SiO2) insulation layer as the middle layer of the DML, wherein the device layer (HR—Si) and the handle layer (HR—Si) are the top and bottom layers of the DML. A high-precision fabrication process for the SOI wafer, wherein the height of the dielectric microstrip lines can be accurately controlled, may be utilized to fabricate DML circuits of embodiments. A non-contact measurement technology may be used to test the DML circuits of embodiments.

Abstract: Systems and methods which provide low-loss dielectric microstrip line (DML) circuits for use with respect to signals in the terahertz frequency range are described. Low-loss DML integrated circuits of embodiments, such as may comprise DML transmission lines, DML couplers, DML crossovers, etc., may be based on silicon technology and are adapted for signal frequencies in the range of 750-925 GHz. A DML circuit implementation may he comprised of silicon on insulator based DML structure having a silicon dioxide (SiO2) insulation layer as the middle layer of the DML, wherein the device layer (HR—Si) and the handle layer (HR—Si) are the top and bottom layers of the DML. A high-precision fabrication process for the SOI wafer, wherein the height of the dielectric microstrip lines can be accurately controlled, may be utilized to fabricate DML circuits of embodiments. A non-contact measurement technology may be used to test the DML circuits of embodiments.