Patents by Inventor Harald Wanka
Harald Wanka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150372170Abstract: The invention relates to a method for producing a selective emitter structure (8) on a useful side (3) of a solar cell (1), wherein the emitter structure (8) comprises a doped emitter layer (4) and several contact elements (5), in particular contact fingers, arranged on the emitter layer, and wherein the emitter layer (4) is provided with higher doping in the region below the contact elements (5) than in the region between the contact elements (5). The following steps are provided: a) providing the solar cell (1) having an emitter layer that is doped overall, b) producing the contact elements (5) on the emitter layer (4), and c) reducing the doping of the emitter layer (4) in the region between the contact elements (5) by an etching processing of the entire useful side (3) of the solar cell (1). The invention further relates to a device and a solar cell.Type: ApplicationFiled: February 5, 2014Publication date: December 24, 2015Applicant: ASYS AUTOMATISIERUNGSSYSTEME GMBHInventor: Harald WANKA
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Method for the removal of doped surface layers on the back faces of crystalline silicon solar wafers
Patent number: 8211323Abstract: The invention relates to a method for the one-sided removal of a doped surface layer on rear sides of crystalline silicon solar wafers. In accordance with the object set, doped surface layers should be able to be removed from rear sides of such solar wafers in a cost-effective manner and with a handling which is gentle on the substrate. In addition, the front side should not be modified. In accordance with the invention, an etching gas is directed onto the rear side surface of silicon solar wafers with a plasma atmospheric pressure.Type: GrantFiled: June 14, 2006Date of Patent: July 3, 2012Assignees: Fraunhofer-Gesellschaft zur Forderung der Angewandten Forschung E.V., Centrotherm Photovoltaics AGInventors: Moritz Heintze, Rainer Moeller, Harald Wanka, Elena Lopez, Volkmar Hopfe, Ines Dani, Milan Rosina -
Patent number: 8043946Abstract: A doping mixture for coating semiconductor substrates which are then subjected to a high temperature treatment to form a doped layer includes at least one p- or n-dopant, water and a mixture of two or more surfactants. At least one of the surfactants is nonionic. Also, provided are a method for producing such a doping mixture and the use thereof.Type: GrantFiled: May 31, 2006Date of Patent: October 25, 2011Assignees: Centrotherm Photovoltaics AG, Fraunhofer-Gesellschaft zur Forderung der Angewandten Forschung E.V.Inventors: Daniel Biro, Catherine Voyer, Harald Wanka, Jörg Koriath
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Patent number: 7850819Abstract: The invention relates to a plasma reactor with high productivity for surface coating or modification of objects and/or substrates by plasma processes in a processing chamber, preferably as vacuum processes at reduced pressure, having an entrance lock to the processing chamber and an exit lock. The invention is to create a plasma reactor of high productivity, which, with uniformly high productivity, will make possible a rapid simple and selective cleaning of the plasma sources and adjacent parts of the processing chamber. According to the invention, two plasma sources (1, 2) are provided, each alternately couplable to a reaction chamber (7) or a re-etching chamber (8). The plasma sources (1, 2) are fixed for this purpose to an alternating means (6) in such manner that the plasma sources (1, 2) are positionable by a rotatory motion of the alternating means (6) in the reaction chamber (7) or the re-etching chamber (8).Type: GrantFiled: April 18, 2005Date of Patent: December 14, 2010Assignee: Centrotherm Photovoltaics AGInventors: Harald Wanka, Johann Georg Reichart, Hans-Peter Voelk
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Publication number: 20090133628Abstract: A continuous vacuum system for processing substrates has an inlet air lock, an outlet air lock, at least one process chamber, and a device for conveying the substrates through the continuous system. To create a continuous system having a compact design and high throughput for plasma-enhanced treatment of substrates at a reduced pressure, which ensures a simple, rapid and secure handling of the substrates with a high capacity of the substrate carrier, the conveying device has at least one plasma boat in which the substrates are arranged on a base plate in a three-dimensional stack in at least one plane at a predefined distance from one another with intermediate carriers in between. At least the intermediate carriers are made of graphite or another suitable electrically conductive material and can be acted upon electrically with an alternating voltage via an electric connection.Type: ApplicationFiled: October 22, 2008Publication date: May 28, 2009Applicant: Centrotherm Photovoltaics AGInventors: Roland DAHL, Josef Haase, Moritz Heintze, Thomas Pernau, Hans Reichart, Harald Wanka, Jan-Dirk Kaehler, Reinhard Lenz, Dieter Zernickel, Robert Michael Hartung
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Publication number: 20090071535Abstract: Disclosed is an antireflective coating on solar cells made of crystalline silicon as well as a method for producing such an antireflective coating. The aim is to create an antireflective coating on solar cells made of crystalline silicon which makes it possible to optimize the optical and passivating properties thereof while making it possible to easily and economically integrate the production thereof into the production process especially of very thin crystalline silicon solar cells. The antireflective coating is composed of successive partial layers, i.e., a lower partial layer which covers the crystalline silicon, is embodied as an antireflective coating and as passivation with a particularly great hydrogen concentration, and is covered by an upper partial layer having an increased barrier effect against hydrogen diffusion.Type: ApplicationFiled: November 2, 2006Publication date: March 19, 2009Applicant: Centrotherm Photovoltaics AGInventors: Rainer Moeller, Robert Michael Hartung, Harald Wanka
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Publication number: 20080314288Abstract: A doping mixture for coating semiconductor substrates which are then subjected to a high temperature treatment to form a doped layer includes at least one p- or n-dopant, water and a mixture of two or more surfactants. At least one of the surfactants is nonionic. Also provided are a method for producing such a doping mixture and the use thereof.Type: ApplicationFiled: May 31, 2006Publication date: December 25, 2008Applicants: Centrotherm Photovoltaics AG, Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V.Inventors: Daniel Biro, Catherine Voyer, Harald Wanka, Jorg Koriath
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Method For the Removal of Doped Surface Layers on the Back Faces of Crystalline Silicon Solar Wafers
Publication number: 20080305643Abstract: The invention relates to a method for the one-sided removal of a doped surface layer on rear sides of crystalline silicon solar wafers. In accordance with the object set, doped surface layers should be able to be removed from rear sides of such solar wafers in a cost-effective manner and with a handling which is gentle on the substrate. In addition, the front side should not be modified. In accordance with the invention, an etching gas is directed onto the rear side surface of silicon solar wafers with a plasma atmospheric pressure.Type: ApplicationFiled: June 14, 2006Publication date: December 11, 2008Inventors: Moritz Heintze, Rainer Moeller, Harald Wanka, Elena Lopez, Volkmar Hopfe, Ines Dani, Milan Rosina -
Patent number: 7178402Abstract: A pressure-measuring device is configured for use in vacuum systems, which are used for surface coating or modification of objects and/or substrates in an inner receptacle inside a processing chamber. Elastic elements or portions are fabricated in the inner receptacle. The pressure-measuring device includes distance-measuring elements designed to measure the deformation of the elastic elements of the inner receptacle. The deformation measurements are related to the pressure in the inner receptacle. The pressure-measuring device provides a continuous and secure determination of the pressure.Type: GrantFiled: April 27, 2005Date of Patent: February 20, 2007Assignee: Centrotherm Photovoltaics GmbH & Co. KGInventors: Harald Wanka, Johann Georg Reichart, Hans-Peter Volkelk
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Publication number: 20060137459Abstract: A pressure-measuring device is configured for use in vacuum systems, which are used for surface coating or modification of objects and/or substrates in an inner receptacle inside a processing chamber. Elastic elements or portions are fabricated in the inner receptacle. The pressure-measuring device includes distance-measuring elements designed to measure the deformation of the elastic elements of the inner receptacle. The deformation measurements are related to the pressure in the inner receptacle. The pressure-measuring device provides a continuous and secure determination of the pressure.Type: ApplicationFiled: April 27, 2005Publication date: June 29, 2006Inventors: Harald Wanka, Johann Reichart, Hans-Peter Voelk
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Patent number: 7012026Abstract: A method of producing well-defined polycrystalline silicon regions is described, in particular for producing electrically conducting regions, in which a substrate is provided with an insulating layer and a layer of doped amorphous silicon, electromagnetic irradiation is performed using a laser source to produce the electrically conducting regions, and a shadow mask is positioned between the laser source and the substrate having the layer for definition of the contours of the electrically conducting regions.Type: GrantFiled: January 26, 2001Date of Patent: March 14, 2006Assignee: Robert Bosch GmbHInventors: Walter Emili, Herbert Goebel, Harald Wanka
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Publication number: 20050279455Abstract: A plasma reactor is configured for rapid, simple and selective cleaning of plasma sources and adjacent areas of the processing chamber. The plasma reactor includes a processing chamber having a plurality of plasma zones, each associated with its own plasma source and/or a remote or downstream plasma source. The plasma reactor is configured so that substrates can be transported past the individual plasma sources in a processing mode in which the substrates are exposed to processing gasses chemically activated by the plasmas of the individual plasma sources. The plasma sources or zones can be selectively isolated or shielded from the substrates.Type: ApplicationFiled: April 18, 2005Publication date: December 22, 2005Inventors: Harald Wanka, Johann Reichert, Hans-Peter Voelk, Moritz Heintze
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Publication number: 20050279456Abstract: The invention relates to a plasma reactor with high productivity for surface coating or modification of objects and/or substrates by plasma processes in a processing chamber, preferably as vacuum processes at reduced pressure, having an entrance lock to the processing chamber and an exit lock. The invention is to create a plasma reactor of high productivity, which, with uniformly high productivity, will make possible a rapid simple and selective cleaning of the plasma sources and adjacent parts of the processing chamber. According to the invention, two plasma sources (1, 2) are provided, each alternately couplable to a reaction chamber (7) or a re-etching chamber (8). The plasma sources (1, 2) are fixed for this purpose to an alternating means (6) in such manner that the plasma sources (1, 2) are positionable by a rotatory motion of the alternating means (6) in the reaction chamber (7) or the re-etching chamber (8).Type: ApplicationFiled: April 18, 2005Publication date: December 22, 2005Inventors: Harald Wanka, Johann Reichart, Hans-Peter Voelk
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Publication number: 20050275502Abstract: Proposed is a method for manufacturing a thin-layer component, in particular a thin-layer, high-pressure sensor, as well as a thin-layer component, where a resistive layer for forming measuring elements, in particular strain gauges, is deposited on an electrically non-conductive surface of a diaphragm layer, a contact-layer system for electrically contacting the measuring elements being deposited on the measuring elements in such a manner, that regions of the measuring elements are situated between each region of the contact-layer system and the diaphragm layer. This is used to provide, in particular, a high-pressure sensor, in which the capacitances of the contacts of the contact-layer system are designed to be symmetric.Type: ApplicationFiled: June 7, 2005Publication date: December 15, 2005Inventors: Herbert Goebel, Harald Wanka, Andre Kretschmann, Ralf Henn, Joachim Gluck, Horst Muenzel
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Publication number: 20040026367Abstract: Proposed is a method for manufacturing a thin-layer component, in particular a thin-layer, high-pressure sensor, as well as a thin-layer component, where a resistive layer for forming measuring elements, in particular strain gauges (30), is deposited on an electrically non-conductive surface of a diaphragm layer (10, 20), a contact-layer system (41) for electrically contacting the measuring elements being deposited on the measuring elements in such a manner, that regions of the measuring elements (30) are situated between each region of the contact-layer system and the diaphragm layer (10, 20). This is used to provide, in particular, a high-pressure sensor, in which the capacitances of the contacts of the contact-layer system are designed to be symmetric.Type: ApplicationFiled: July 29, 2003Publication date: February 12, 2004Inventors: Herbert Goebel, Harald Wanka, Andre Kretschmann, Ralf Henn, Joachim Gluck, Horst Muenzel
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Publication number: 20040026358Abstract: A method of producing well-defined polycrystalline silicon regions is described, in particular for producing electrically conducting regions, having the steps:Type: ApplicationFiled: December 2, 2002Publication date: February 12, 2004Inventors: Walter Emili, Herbert Goebel, Harald Wanka
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Patent number: 6667683Abstract: A trimming resistor is manufactured by depositing a resistive layer on a substrate, with a passivation layer having windows, and a contact layer which is in contact with the resistive layer via the windows. Trimming is carried out by interrupting the contact layer at narrow spots or regions. This invention has application for the manufacture of high-pressure sensors.Type: GrantFiled: October 13, 2000Date of Patent: December 23, 2003Assignee: Robert Bosch GmbHInventors: Walter Emili, Herbert Goebel, Harald Wanka