Patents by Inventor Hariklia Deligianni

Hariklia Deligianni has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11311234
    Abstract: A sensing and treatment device includes an array of metal nanorod electrodes formed on a substrate, the array including first electrodes for sensing, and second electrodes for electrical pulsation. A data processing system is configured to monitor a parameter using the first electrodes and to activate the electrical pulsation in the second electrodes in accordance with a reading of the parameter.
    Type: Grant
    Filed: November 9, 2017
    Date of Patent: April 26, 2022
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hariklia Deligianni, Bruce B. Doris, Steven J. Holmes, Emily R. Kinser, Qinghuang Lin, Roy R. Yu
  • Patent number: 11311233
    Abstract: A sensing and treatment device includes an array of metal nanorod electrodes formed on a substrate, the array including first electrodes for sensing, and second electrodes for electrical pulsation. A data processing system is configured to monitor a parameter using the first electrodes and to activate the electrical pulsation in the second electrodes in accordance with a reading of the parameter.
    Type: Grant
    Filed: May 23, 2017
    Date of Patent: April 26, 2022
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hariklia Deligianni, Bruce B. Doris, Steven J. Holmes, Emily R. Kinser, Qinghuang Lin, Roy R. Yu
  • Patent number: 11222742
    Abstract: Embodiments are directed to a method of forming a laminated magnetic inductor and resulting structures having anisotropic magnetic layers. A first magnetic stack is formed having one or more magnetic layers alternating with one or more insulating layers. A trench is formed in the first magnetic stack oriented such that an axis of the trench is perpendicular to a hard axis of the magnetic inductor. The trench is filled with a dielectric material.
    Type: Grant
    Filed: October 3, 2019
    Date of Patent: January 11, 2022
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hariklia Deligianni, Bruce B. Doris, Eugene J. O'Sullivan, Naigang Wang
  • Patent number: 11205541
    Abstract: A method for fabricating a magnetic material stack on a substrate, comprises forming a first dielectric layer, forming a first magnetic material layer on the first dielectric layer, forming at least a second dielectric layer on the first magnetic material layer and forming at least a second magnetic material layer on the second dielectric layer. During one or more of the forming steps, a surface smoothing operation is performed to remove at least a portion of surface roughness on the layer being formed.
    Type: Grant
    Filed: March 4, 2019
    Date of Patent: December 21, 2021
    Assignee: International Business Machines Corporation
    Inventors: Hariklia Deligianni, Bruce B. Doris, Eugene J. O'Sullivan, Naigang Wang
  • Patent number: 11191950
    Abstract: Aspects include high resolution brain-electronic interfaces and related methods. Aspects include forming a semiconductor circuit on a substrate, depositing a tensile stress layer on the circuit, and separating the semiconductor circuit from a portion of the silicon substrate. Aspects also include removing the tensile stress layer from the semiconductor circuit and transferring the semiconductor circuit to a biocompatible film.
    Type: Grant
    Filed: August 16, 2019
    Date of Patent: December 7, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Qing Cao, Hariklia Deligianni, Fei Liu
  • Patent number: 11170933
    Abstract: Embodiments of the invention are directed to a method of fabricating a yoke arrangement of an inductor. A non-limiting example method includes forming a dielectric layer across from a major surface of a substrate. The method further includes configuring the dielectric layer such that it imparts a predetermined dielectric layer compressive stress on the substrate. A magnetic stack is formed on an opposite side of the dielectric layer from the substrate, wherein the magnetic stack includes one or more magnetic layers alternating with one or more insulating layers. The method further includes configuring the magnetic stack such that it imparts a predetermined magnetic stack tensile stress on the dielectric layer, wherein a net effect of the predetermined dielectric layer compressive stress and the predetermined magnetic stack tensile stress on the substrate is insufficient to cause a portion of the major surface of the substrate to be substantially non-planar.
    Type: Grant
    Filed: April 23, 2019
    Date of Patent: November 9, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hariklia Deligianni, Bruce B. Doris, Eugene J. O'Sullivan, Naigang Wang
  • Patent number: 11164992
    Abstract: A semiconductor device includes a substrate and a buffer layer disposed on a first portion, a second portion, and a third portion of the substrate. The semiconductor device further includes a multilayer light-emitting diode (LED) stack disposed on the first portion of the substrate, and an optical sensor disposed on the second portion of the substrate. The semiconductor device further includes at least one electrode disposed on the third portion of the substrate, a first conductor in contact with the multilayer LED stack, and a second conductor in contact with the optical sensor. The at least one electrode, the first conductor, and the second conductor are formed of a glassy carbon material.
    Type: Grant
    Filed: November 13, 2019
    Date of Patent: November 2, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Steve Holmes, Devendra Sadana, Stephen W. Bedell, Bruce Doris, Hariklia Deligianni, Jia Chen
  • Patent number: 11152144
    Abstract: Present disclosure relates to magnetic materials, chips having magnetic materials, and methods of forming magnetic materials. In certain embodiments, magnetic materials may include a seed layer, and a cobalt-based alloy formed on seed layer. The seed layer may include copper, cobalt, nickel, platinum, palladium, ruthenium, iron, nickel alloy, cobalt-iron-boron alloy, nickel-iron alloy, and any combination of these materials. In certain embodiments, the chip may include one or more on-chip magnetic structures. Each on-chip magnetic structure may include a seed layer, and a cobalt-based alloy formed on seed layer. In certain embodiments, method may include: placing a seed layer in an aqueous electroless plating bath to form a cobalt-based alloy on seed layer. In certain embodiments, the aqueous electroless plating bath may include sodium tetraborate, an alkali metal tartrate, ammonium sulfate, cobalt sulfate, ferric ammonium sulfate and sodium borohydride and has a pH between about 9 to about 13.
    Type: Grant
    Filed: April 13, 2017
    Date of Patent: October 19, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hariklia Deligianni, William J. Gallagher, Yu Luo, Lubomyr T. Romankiw, Joonah Yoon
  • Patent number: 11110608
    Abstract: A method controls a robot. One or more processors receive sensor readings from one or more sensors that are monitoring a human in real time, where the human is currently observing a robotic action by a robot, and where the robotic action is a physical movement performed by the robot. The processor(s) determine a cognitive state of the human while the human is observing the robotic action by the robot, and then adjust the robotic action being performed by the robot based on the cognitive state of the human.
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: September 7, 2021
    Assignee: International Business Machines Corporation
    Inventors: Andrew Aaron, Hariklia Deligianni, David O. S. Melville, Mark E. Podlaseck, Hyun Kyu Seo
  • Patent number: 11107878
    Abstract: An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.
    Type: Grant
    Filed: March 24, 2015
    Date of Patent: August 31, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hariklia Deligianni, William J. Gallagher, Maurice Mason, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang
  • Patent number: 11083902
    Abstract: Techniques regarding an implantable biosensor package are provided. For example, one or more embodiments described herein can regard an apparatus, which can comprise a biosensor module. The biosensor module can comprise a semiconductor substrate and a processor. The semiconductor substrate can have a sensor operably coupled to the processor. The apparatus can also comprise a polymer layer. The biosensor module can be embedded within the polymer layer such that the polymer layer can be provided on a plurality of sides of the biosensor module.
    Type: Grant
    Filed: May 29, 2018
    Date of Patent: August 10, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Steven Holmes, Bruce B. Doris, Hariklia Deligianni, Roy R. Yu
  • Patent number: 11014127
    Abstract: A first material is filled during a semiconductor fabrication process in a space bound on at least one side by a fence formation created as a result of an etching operation. A solvent-removable material is deposited such that the solvent-removable material encapsulates at least that portion of the fence formation which is protruding from the structure such that a height of the fence formation exceeds a height of the structure. The portion of the fence formation which is protruding from the structure and a first portion of the solvent-removable material are removed by planarization. A second portion of the solvent-removable material is removed by dissolving in a solvent, the second portion remaining after removal by the planarization of the first portion of the solvent-removable material.
    Type: Grant
    Filed: October 7, 2019
    Date of Patent: May 25, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hariklia Deligianni, Bruce B. Doris, Eugene J. O'Sullivan, Naigang Wang
  • Patent number: 10971576
    Abstract: An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.
    Type: Grant
    Filed: November 20, 2017
    Date of Patent: April 6, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hariklia Deligianni, William J. Gallagher, Andrew J. Kellock, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang
  • Patent number: 10954544
    Abstract: Embodiments of the present invention are directed to a semiconductor device. A non-limiting example of the semiconductor device includes a semiconductor substrate. The semiconductor device also includes a plurality of metal nanopillars formed on the substrate. The semiconductor device also includes an amperometric sensor associated with one of the plurality of nanopillars, wherein the amperometric sensor is selective to an enzyme-active neurotransmitter. The semiconductor device also includes a resistivity sensor associated with a pair of nanopillars, wherein the resistivity sensor is selective to an analyte.
    Type: Grant
    Filed: November 22, 2019
    Date of Patent: March 23, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Hariklia Deligianni, Bruce B. Doris, Steven J. Holmes, Qinghuang Lin, Roy R. Yu
  • Patent number: 10943732
    Abstract: A magnetic material stack comprises a first dielectric layer, a first magnetic material layer on the first dielectric layer, at least a second dielectric layer on the first magnetic material layer and at least a second magnetic material layer on the second dielectric layer. One or more surfaces of the layers are smoothed to remove at least a portion of surface roughness on the respective layers.
    Type: Grant
    Filed: March 4, 2019
    Date of Patent: March 9, 2021
    Assignee: International Business Machines Corporation
    Inventors: Hariklia Deligianni, Bruce B. Doris, Eugene J. O'Sullivan, Naigang Wang
  • Patent number: 10900924
    Abstract: Embodiments of the invention are directed to a system for detecting neurotransmitters. A non-limiting example of the system includes a porous electrode. A system can also include a pH sensor attached to the porous electrode, wherein the pH sensor includes a sensing electrode and a reference electrode. The system can also include electronic circuitry in communication with the pH sensor.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: January 26, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Qing Cao, Hariklia Deligianni, Fei Liu
  • Patent number: 10898725
    Abstract: Embodiments of the invention are directed to an integrated optogenetic device. The integrated optogenetic includes a substrate layer having a first substrate region and a second substrate region. The device further includes a first contact formed over the substrate layer in the first substrate region and a second contact layer formed over the substrate layer in the second region. In addition, the device includes a light-emitting diode (LED) structure communicatively coupled to the first contact layer and a biosensor element communicatively coupled to the second contact layer. The first contact layer is configured to operate as a bottom contact that provides electrical contact to the LED structure. The first contact layer is further configured to be substantially lattice matched with the substrate layer and a bottom layer of the LED structure.
    Type: Grant
    Filed: November 26, 2018
    Date of Patent: January 26, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Steve Holmes, Stephen W. Bedell, Jia Chen, Hariklia Deligianni, Devendra K. Sadana
  • Patent number: 10874876
    Abstract: Probes include a probe body configured to penetrate biological tissue. High-efficiency light sources are positioned within the probe body. Each high-efficiency light source has a sufficiently intense light output to trigger a light-sensitive reaction in neighboring tissues and has a sufficiently low power output such that a combined heat output of multiple light sources does cause a disruptive temperature increase in the neighboring tissues.
    Type: Grant
    Filed: January 26, 2018
    Date of Patent: December 29, 2020
    Assignee: International Business Machines Corporation
    Inventors: Hariklia Deligianni, Ko-Tao Lee, Ning Li, Devendra K. Sadana
  • Patent number: 10811547
    Abstract: A chalcogen-resistant material including at least one of a conductive elongated nanostructure layer and a high work function material layer is deposited on a transition metal layer on a substrate. A semiconductor chalcogenide material layer is deposited over the chalcogen-resistant material. The conductive elongated nanostructures, if present, can reduce contact resistance by providing direct electrically conductive paths from the transition metal layer through the chalcogen-resistant material and to the semiconductor chalcogenide material. The high work function material layer, if present, can reduce contact resistance by blocking chalcogenization of the transition metal in the transition metal layer. Reduction of the contact resistance can enhance efficiency of a solar cell including the chalcogenide semiconductor material.
    Type: Grant
    Filed: September 12, 2016
    Date of Patent: October 20, 2020
    Assignee: International Business Machines Corporation
    Inventors: Shafaat Ahmed, Hariklia Deligianni, Lubomyr T. Romankiw
  • Patent number: 10811177
    Abstract: A magnetic laminating structure and process for preventing substrate bowing include a first magnetic layer, at least one additional magnetic layer, and a dielectric spacer disposed between the first and at least one additional magnetic layers. The magnetic layers are characterized by defined tensile strength. To balance the tensile strength of the magnetic layer, the dielectric layer is selected to provide compressive strength so as to counteract the tendency of the wafer to bow as a consequence of the tensile strength imparted by the magnetic layer(s).
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: October 20, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Bruce B. Doris, Hariklia Deligianni, Eugene J. O'Sullivan, Naigang Wang