Patents by Inventor Harry S. Whitesell

Harry S. Whitesell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • 3D NAND etch
    Patent number: 11515170
    Abstract: Methods of etching film stacks to form gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.
    Type: Grant
    Filed: December 30, 2020
    Date of Patent: November 29, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Shishi Jiang, Pramit Manna, Bo Qi, Abhijit Basu Mallick, Rui Cheng, Tomohiko Kitajima, Harry S. Whitesell, Huiyuan Wang
  • 3D NAND Etch
    Publication number: 20210118691
    Abstract: Methods of etching film stacks to form gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.
    Type: Application
    Filed: December 30, 2020
    Publication date: April 22, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Shishi Jiang, Pramit Manna, Bo Qi, Abhijit Basu Mallick, Rui Cheng, Tomohiko Kitajima, Harry S. Whitesell, Huiyuan Wang
  • 3D NAND etch
    Patent number: 10886140
    Abstract: Methods of etching film stacks to from gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.
    Type: Grant
    Filed: July 26, 2019
    Date of Patent: January 5, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Shishi Jiang, Pramit Manna, Bo Qi, Abhijit Basu Mallick, Rui Cheng, Tomohiko Kitajima, Harry S. Whitesell, Huiyuan Wang
  • 3D NAND Etch
    Publication number: 20200035505
    Abstract: Methods of etching film stacks to from gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.
    Type: Application
    Filed: July 26, 2019
    Publication date: January 30, 2020
    Inventors: Shishi Jiang, Pramit Manna, Bo Qi, Abhijit Basu Mallick, Rui Cheng, Tomohiko Kitajima, Harry S. Whitesell, Huiyuan Wang
  • Techniques for improved removal of sacrificial mask
    Patent number: 10354875
    Abstract: A method may include forming a sacrificial mask on a device structure, the sacrificial mask comprising a carbon-based material. The method may further include etching memory structures in exposed regions of the sacrificial mask, implanting an etch-enhancing species into the sacrificial mask, and performing a wet etch to selectively remove the sacrificial mask at etch temperature, less than 350° C.
    Type: Grant
    Filed: April 6, 2018
    Date of Patent: July 16, 2019
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Rajesh Prasad, Ning Zhan, Tzu-Yu Liu, James Cournoyer, Kyu-Ha Shim, Kwangduk Lee, John Lee Klocke, Eric J. Bergman, Terrance Lee, Harry S. Whitesell
  • TECHNIQUES FOR IMPROVED REMOVAL OF SACRIFICIAL MASK
    Publication number: 20190214255
    Abstract: A method may include forming a sacrificial mask on a device structure, the sacrificial mask comprising a carbon-based material. The method may further include etching memory structures in exposed regions of the sacrificial mask, implanting an etch-enhancing species into the sacrificial mask, and performing a wet etch to selectively remove the sacrificial mask at etch temperature, less than 350° C.
    Type: Application
    Filed: April 6, 2018
    Publication date: July 11, 2019
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Rajesh Prasad, Ning Zhan, Tzu-Yu Liu, James Cournoyer, Kyu-Ha Shim, Kwangduk Lee, John Lee Klocke, Eric J. Bergman, Terrance Lee, Harry S. Whitesell