Patents by Inventor Hartmut G. Roskos
Hartmut G. Roskos has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9190956Abstract: A sub-harmonic electronic mixer has at least one field effect transistor (FET) having a gate, source, and drain; and a useful signal input at a useful frequency; and a local oscillator input. The input receives the oscillator signal at a frequency being an integral fraction of the useful frequency, plus or minus a mixing frequency to provide a signal output. A gate of the FET and/or the drain and/or the source receives the useful signal to generate a gate-source voltage and/or a drain-source voltage whereby the gate receives the local oscillator signal to generate a gate-source voltage, and the drain or a source receives the local oscillator signal to generate a drain-source voltage. A phase shift is introduced between the signal received at the gate and the signal received at the drain or source of the FET.Type: GrantFiled: May 13, 2011Date of Patent: November 17, 2015Assignee: Johann Wolfgang Goethe-Universitat Frankfurt a.M.Inventors: Hartmut G. Roskos, Alvydas Lisauskas, Sebastian Boppel
-
Publication number: 20140145778Abstract: A sub-harmonic electronic mixer has at least one field effect transistor (FET) having a gate, source, and drain; and a useful signal input at a useful frequency; and a local oscillator input. The input receives the oscillator signal at a frequency being an integral fraction of the useful frequency, plus or minus a mixing frequency to provide a signal output. A gate of the FET and/or the drain and/or the source receives the useful signal to generate a gate-source voltage and/or a drain-source voltage whereby the gate receives the local oscillator signal to generate a gate-source voltage, and the drain or a source receives the local oscillator signal to generate a drain-source voltage. A phase shift is introduced between the signal received at the gate and the signal received at the drain or source of the FET.Type: ApplicationFiled: May 13, 2011Publication date: May 29, 2014Inventors: Hartmut G. Roskos, Alvydas Lisauskas, Sebastian Boppel
-
Patent number: 8547158Abstract: The invention relates to devices comprising field effect transistors to detect the power of an electromagnetic high frequency signal VRF. According to the prior art, the high frequency signal is coupled into the gate G and via a capacitor CGD into the drain D of the field effect transistor FET, the gate G being biased with a direct voltage Vg which corresponds to the threshold value of the FET transistor. The resulting current at the source S contains a direct current portion Ids which is proportional to the square of the amplitude of the high frequency signal. The operating frequency of said power detectors is limited to a few gigahertz (GHz) by the discrete arrangement and especially by the predetermined gate length of the field effect transistor. The aim of the invention is to improve a resistive mixer in such a manner that it can be operated at high gigahertz and terahertz frequencies.Type: GrantFiled: August 28, 2009Date of Patent: October 1, 2013Assignee: Johann Wolfgang Goeth-Universität Frankfurt a.M.Inventors: Ullrich Pfeiffer, Erik Oejefors, Hartmut G. Roskos, Alvydas Lisauskas
-
Patent number: 8350240Abstract: The present invention concerns a device for generating and detecting coherent electromagnetic radiation (8) in the THz frequency range, comprising an optically parametric oscillator (2) for generating electromagnetic radiation in the THz frequency range (8). To provide a device for generating and detecting electromagnetic radiation in the THz frequency range it is proposed in accordance with the invention that it has a coherent phase-sensitive detector (3, 21) for detecting intensity and phase of the electromagnetic radiation (8) generated by the optically parametric oscillator (2).Type: GrantFiled: May 21, 2008Date of Patent: January 8, 2013Assignee: Johann Wolfgang Goethe-UniversitatInventors: Torsten Loeffler, Hartmut G. Roskos, René Beigang
-
Patent number: 8330111Abstract: The present invention relates to a device for detecting millimeter waves, having at least one field effect transistor with a source, a drain, a gate, a gate-source contact, a source-drain channel, and a gate-drain contact. Compared to a similar such device, the problem addressed by the present invention, among others, is that of providing a device which enables the provision of a field effect transistor for detecting the power and/or phase of electromagnetic radiation in the Thz frequency range. In order to create such a device, it is suggested according to the invention, that a device be provided which has an antenna structure wherein the field effect transistor is connected to the antenna structure in such a manner that an electromagnetic signal received by the antenna structure in the THz range is fed into the field effect transistor via the gate-source contact, and wherein the field effect transistor and the antenna structure are arranged together on a single substrate.Type: GrantFiled: December 12, 2008Date of Patent: December 11, 2012Assignee: Johann Wolfgang Goethe-Universitat Frankfurt A.M.Inventors: Erik Öjefors, Peter Haring Bolivar, Hartmut G. Roskos, Ullrich Pfeiffer
-
Publication number: 20110254610Abstract: The invention relates to devices comprising field effect transistors to detect the power of an electromagnetic high frequency signal VRF. According to the prior art, the high frequency signal is coupled into the gate G and via a capacitor CGD into the drain D of the field effect transistor FET, the gate G being biased with a direct voltage Vg which corresponds to the threshold value of the FET transistor. The resulting current at the source S contains a direct current portion Ids which is proportional to the square of the amplitude of the high frequency signal. The operating frequency of said power detectors is limited to a few gigahertz (GHz) by the discrete arrangement and especially by the predetermined gate length of the field effect transistor. The aim of the invention is to improve a resistive mixer in such a manner that it can be operated at high gigahertz and terahertz frequencies.Type: ApplicationFiled: August 28, 2009Publication date: October 20, 2011Applicants: BERGISCHE UNIVERSIT??T WUPPERTAL, JOHANN WOLFGANG GOETHE-UNIVERSITAT FRANKFURT A.M.Inventors: Ullrich Pfeiffer, Erik Oejefors, Hartmut G. Roskos, Alvydas Lisauskas
-
Publication number: 20110001173Abstract: The present invention relates to a device for detecting millimeter waves, having at least one field effect transistor with a source, a drain, a gate, a gate-source contact, a source-drain channel, and a gate-drain contact. Compared to a similar such device, the problem addressed by the present invention, among others, is that of providing a device which enables the provision of a field effect transistor for detecting the power and/or phase of electromagnetic radiation in the Thz frequency range. In order to create such a device, it is suggested according to the invention, that a device be provided which has an antenna structure wherein the field effect transistor is connected to the antenna structure in such a manner that an electromagnetic signal received by the antenna structure in the THz range is fed into the field effect transistor via the gate-source contact, and wherein the field effect transistor and the antenna structure are arranged together on a single substrate.Type: ApplicationFiled: December 12, 2008Publication date: January 6, 2011Applicant: JOHANN WOLFGANG GOETHE-UNIVERSITAT FRANKFURT A.M.Inventors: Erik Öjefors, Peter Haring Bolivar, Hartmut G. Roskos, Ullrich Pfeiffer
-
Publication number: 20100213375Abstract: The present invention relates to a device for generating and detecting coherent electromagnetic radiation (8) in the THz frequency range, comprising an optically parametric oscillator (2) for generating electromagnetic radiation in the THz frequency range (8). In order to provide a device for generating and detecting electromagnetic radiation in the THz frequency range, according to the invention the device comprises a coherent phase-sensitive detector (3, 21) for detecting the intensity and phase of the electromagnetic radiation generated by the optically parametric oscillator (2).Type: ApplicationFiled: May 21, 2008Publication date: August 26, 2010Applicant: JOHANN WOLFGANG GOETHE-UNIVERSITAT FRANKFURT A.M.Inventors: Torsten Loeffler, Hartmut G. Roskos, Rene Beigang