Abstract: A compact solar simulator includes a target surface for a solar module, an enclosure behind the target surface, and at least one source fixture including a lamp in the enclosure spaced from the target surface. Diffusing surfaces about the source fixture diffuse radiation emitted by the lamp. Specular reflectors are positioned to steer the diffused radiation to the target surface and are oriented to create a uniform intensity distribution across the target surface. Moreover, the surface area of any desired filters is reduced and any longitudinal non-uniform intensity distribution of the lamp is corrected.

Abstract: An LED based solar simulator and method. An emitter plane includes an array of quarter panels below a test plane. Each quarter panel includes multiple close pitch LEDs of different wavelengths in an array, a plurality of LEDs for select wavelengths per quarter panel, and one or more different wavelength LEDs in a plurality of class A wavelength intervals in order to more closely match the solar spectrum.

Abstract: A compact solar simulator includes a target surface for a solar module, an enclosure behind the target surface, and at least one source fixture including a lamp in the enclosure spaced from the target surface. Diffusing surfaces about the source fixture diffuse radiation emitted by the lamp. Specular reflectors are positioned to steer the diffused radiation to the target surface and are oriented to create a uniform intensity distribution across the target surface. Moreover, the surface area of any desired filters is reduced and any longitudinal non-uniform intensity distribution of the lamp is corrected.

Abstract: A solar simulator filter includes filter material configured to achieve class A performance for the spectral output of the optical source except between about 900 and 1,100 nm. Openings in the filter material increase the average effective transmittance between about 900 and 1,100 nm to achieve class A performance for the spectral output of the source.

Abstract: A solar simulator filter includes filter material configured to achieve class A performance for the spectral output of the optical source except between about 900 and 1,100 nm. Openings in the filter material increase the average effective transmittance between about 900 and 1,100 nm to achieve class A performance for the spectral output of the source.

Abstract: A detector-preamplifier subassembly for an optical receiver comprising a header base having a top surface and a bottom surface, a plurality of leads passing through the top and bottom surfaces of the header base, a preamplifier mounted to the top surface of the header base, a standoff mounted to the top surface of the header base, a photodetector mounted to the standoff, and said standoff comprising a single-layer capacitor, wherein the single-layer capacitor functions as both a capacitor for the detector-preamplifier subassembly and a standoff for properly positioning the photodetector above the top surface of the header base. In this manner, the separate capacitors and several wire bonds are eliminated, thus increasing available surface area on the header base and improving performance and reliability of the detector-preamplifier subassembly and the optical receiver.

Abstract: A semiconductor laser device which provides enhanced carrier confinement. This device utilizes a single or multi-quantum well structure located between graded index confinement layers which are in turn between a pair of cladding layers. Semiconductor layers are selected such that the quantum well active region and confinement layers form a PN junction by being located between layers having N-type dopants on one side and P-type dopants on the second side for proper diode response. Within each confinement layer there is formed a plurality of multi-quantum barrier layers which serve to further increase the carrier confinement within the quantum well region by increasing the effective potential barrier within the graded index confinement region. The multi-quantum barrier layers are comprised of layers of the material forming the graded index confinement layers having alternating large and small concentrations of the material whose percentage is being varied in the graded index confinement layers.

Abstract: Pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP, and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms thick and grown preferably by molecular beam deposition, although other processes such as vacuum evaporation, sputtering, chemical vapor deposition, and deposition from a liquid melt may be used. The layers are grown on the <100> <110>, and surfaces of the III-V crystals. The pnictide layer reduces the density of surface states, and allows the depletion layer to be modulated, the surface barrier reduced, the electron concentration at the surface increased, and there is a decrease in the surface recombination velocity and an increase in the photoluminescence intensity.

Abstract: Disclosed herein is a semiconductor laser device comprised of a semiconductor substrate having deposited thereon at least one quantum well active region comprised of an alloy of the group consisting of GaInAsP and AlGaInAs sandwiched between upper and lower confinement layers of AlGaInAsP alloy. The laser device is further comprised of AlGaInP cladding layers.

Abstract: A semiconductor laser device comprised of GaInP/AlGaInP materials which efficiently produces visible light output with improved carrier confinement and decreased threshold current density levels. The laser diode uses a strained quantum well positioned between a pair of graded index confinement layers which are in turn positioned between a pair of cladding layers. The active region is preferably comprised of Ga.sub.y In.sub.1-y P and the confinement layers are graded index layers comprised of (Al.sub.x Ga.sub.1-x).sub.0.51 In.sub.0.49 P in which the value of x is linearly graded from 0.40 to a maximum value selected from the range of 0.8 to 1.0 in a direction away from the active region. The cladding layers are comprised of (Al.sub.x Ga.sub.1-x).sub.0.51 In.sub.0.49 P in which the value of x is selected from the range 0.8 to 1.0. Bounding layers may be interdisposed between active region and the confinement layer on either side of the active region. The bounding layers are thin layers comprised of (Al.sub.

Abstract: Pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP, and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms thick and grown preferably by molecular beam deposition, although other processes such as vacuum evaporation, sputtering, chemical vapor deposition, and deposition from a liquid melt may be used. The layers are grown on the <100> <110>, and <111> surfaces of the III-V crystals. The pnictide layer reduces the density of surface states, and allows the depletion layer to be modulated, the surface barrier reduced, the electron concentration at the surface increased, and there is a decrease in the surface recombination velocity and an increase in the photoluminescence intensity.

Abstract: Forming a film by spraying onto a heated substrate an atomized solution containing the appropriate salt of a constituent element of the film and an agent in sufficient amount to change the oxidation state of at least one solute element of the spray solution after contacting the heated substrate.