Patents by Inventor Hatsuo Osada

Hatsuo Osada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7648610
    Abstract: The present invention provides a gas process apparatus that realizes uniform exhaust without depending on process conditions, a gas process chamber that constitutes the gas process apparatus, a baffle plate mounted on the gas process chamber, a method of producing the baffle plate, and an apparatus for producing the baffle plate. The baffle plate of the present invention serves as a partition between a process space in which a chemical process is carried out with a supplied gas, and a duct that is adjacent to the process space and functions to discharge exhaust gas generated as a result of the chemical process. In accordance with the difference between the pressures on both sides of the baffle plate, which difference varies depending on the location on the baffle plate, the baffle holes are disposed on a plurality of locations on the baffle plate.
    Type: Grant
    Filed: December 21, 2000
    Date of Patent: January 19, 2010
    Assignee: Tokyo Electron Limited
    Inventors: Taro Komiya, Hatsuo Osada, Shigetoshi Hosaka, Tomihiro Yonenaga, Masayuki Tomoyasu
  • Publication number: 20030094135
    Abstract: The present invention provides a gas process apparatus that realizes uniform exhaust without depending on process conditions, a gas process chamber that constitutes the gas process apparatus, a baffle plate mounted on the gas process chamber, a method of producing the baffle plate, and an apparatus for producing the baffle plate. The baffle plate of the present invention serves as a partition between a process space in which a chemical process is carried out with a supplied gas, and a duct that is adjacent to the process space and functions to discharge exhaust gas generated as a result of the chemical process. In accordance with the difference between the pressures on both sides of the baffle plate, which difference varies depending on the location on the baffle plate, the baffle holes are disposed on a plurality of locations on the baffle plate.
    Type: Application
    Filed: October 11, 2002
    Publication date: May 22, 2003
    Inventors: Taro Komiya, Hatsuo Osada, Shigetoshi Hosaka, Tomihiro Yonenaga, Masayuki Tomoyasu
  • Patent number: 5951772
    Abstract: A vacuum processing apparatus includes: a vacuum processing chamber for processing a target object; a processing gas supply source for supplying a processing gas by which a process is performed to the target object in the vacuum processing chamber; a processing gas supply pipe for supplying the processing gas from the processing gas supply source into the vacuum processing chamber; and a pressure reducing valve for keeping the gas supply pipe at a lower pressure than the atmospheric pressure when the processing gas is to be supplied to the vacuum processing chamber.
    Type: Grant
    Filed: February 21, 1997
    Date of Patent: September 14, 1999
    Assignee: Tokyo Electron Limited
    Inventors: Kimihiro Matsuse, Hideki Lee, Hatsuo Osada, Sumi Tanaka
  • Patent number: 5647945
    Abstract: A vacuum processing apparatus includes: a vacuum processing chamber for processing a target object; a processing gas supply source for supplying a processing gas by which a process is performed to the target object in the vacuum processing chamber; a processing gas supply pipe for supplying the processing gas from the processing gas supply source into the vacuum processing chamber; and a pressure reducing valve for keeping the gas supply pipe at a lower pressure than the atmospheric pressure when the processing gas is to be supplied to the vacuum processing chamber.
    Type: Grant
    Filed: June 7, 1994
    Date of Patent: July 15, 1997
    Assignee: Tokyo Electron Limited
    Inventors: Kimihiro Matsuse, Hideki Lee, Hatsuo Osada, Sumi Tanaka
  • Patent number: 5445675
    Abstract: A semiconductor processing apparatus comprises a vacuum processing chamber and a lamp house provided thereunder. A susceptor is provided in the processing chamber, and a semiconductor wafer is mounted thereon. The processing chamber and the lamp house are partitioned by a widow plate made of quartz glass in an airtight state. Eight light sources for heating are arranged in a circumferential form on a rotatable table at the portion which is in the lamp house and under the window plate. A sensor comprising a thermocouple for detecting energy of transmitted light is provided between the susceptor and the window plate. The sensor is connected to a measuring section comprising an A/D converter, and thereby detected data is converted from a digital signal to an observed value. The observed value is sent to a comparator to be compared with a predetermined reference model. A comparative result obtained by the comparator is transmitted to a controlling section.
    Type: Grant
    Filed: July 9, 1993
    Date of Patent: August 29, 1995
    Assignee: Tel-Varian Limited
    Inventors: Masao Kubodera, Shigeru Kasai, Hatsuo Osada
  • Patent number: 5333986
    Abstract: A transfer apparatus for transferring a semiconductor wafer has a base provided with a rotary driving source, and four arms having the same length. A first inner arm has an end fixed to the rotary driving shaft, and the other end fixed to a first coupling shaft. A second inner arm has an end supported by the base such that it can rotate about a pivotal point, and the other end is rotatably connected to a second coupling shaft. A transmission mechanism is provided between the first and second coupling shafts. A first outer arm has an end rotatably connected to the first coupling shaft, and a second outer arm has an end fixed to the second coupling shaft. The other ends of the first and second outer arms are rotatably connected to a supporting plate having a wafer-holding portion. The four arms are arranged so as to have a link structure in the form of a parallelogram, which enables linear transfer of a wafer.
    Type: Grant
    Filed: July 29, 1992
    Date of Patent: August 2, 1994
    Assignee: Tokyo Electron Limited
    Inventors: Masami Mizukami, Hatsuo Osada