Patents by Inventor Hayato Namai

Hayato Namai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140363769
    Abstract: A photoresist composition containing a polymer having a structural unit including an acid-labile group, and a compound represented by the formula (1). In the formula (1), R1 represents a hydrogen atom or a monovalent acid-labile group. R2 represents an alicyclic hydrocarbon group having 3 to 20 carbon atoms and a valency of (m+1). m is an integer of 2 to 5. R3 and R4 each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms or a monovalent fluorinated hydrocarbon group having 1 to 20 carbon atoms. n is an integer of 0 to 5. At least two of a plurality of R1 s optionally taken together represent a ring structure, together with a plurality of oxygen atoms bonding to R1 and the carbon atom(s) constituting R2 and bonding to these oxygen atoms. M+ represents a monovalent radiation-degradable onium cation.
    Type: Application
    Filed: August 27, 2014
    Publication date: December 11, 2014
    Applicant: JSR CORPORATION
    Inventors: Hayato NAMAI, Kazuo NAKAHARA, Norihiko IKEDA
  • Patent number: 8883023
    Abstract: A method for forming a pattern includes providing a composition to form a resist underlayer film on a surface of a substrate to be processed. The composition contains a calixarene based compound having a group represented by a following formula (i) bound to at least a part of an aromatic ring or at least a part of a heteroaromatic ring of the calixarene based compound. The resist underlayer film on the surface of the substrate is treated with heat or an acid. A resist pattern is formed on a surface of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask to form the pattern on the substrate. The dry-etched resist underlayer film is removed from the substrate with a basic solution.
    Type: Grant
    Filed: September 28, 2012
    Date of Patent: November 11, 2014
    Assignee: JSR Corporation
    Inventors: Goji Wakamatsu, Hayato Namai, Syun Aoki
  • Publication number: 20140186771
    Abstract: A radiation-sensitive resin composition includes a polymer that includes a structural unit represented by a formula (1), and an acid generator. R1 is a hydrogen atom, a fluorine atom, or the like. R2 is a hydrogen atom or a monovalent hydrocarbon group. R3 is a hydrogen atom, a monovalent chain hydrocarbon group, or the like. R4 is a hydrogen atom, a monovalent chain hydrocarbon group, or the like. R5 is a hydrogen atom, a monovalent chain hydrocarbon group, or the like. R6 is a monovalent chain hydrocarbon group. R6 is bonded to R3 to form a first alicyclic structure, or R6 is bonded to R5 to form a second alicyclic structure. At least one hydrogen atom of R2, R3, or R4 is optionally substituted with a fluorine atom.
    Type: Application
    Filed: March 7, 2014
    Publication date: July 3, 2014
    Applicant: JSR CORPORATION
    Inventor: Hayato NAMAI
  • Patent number: 8734904
    Abstract: Methods are disclosed for forming topographical features. In one method, a pre-patterned structure is provided which comprises i) a support member having a surface and ii) an element for topographically guiding segregation of a polymer mixture including a first polymer and a second polymer, the element comprising a feature having a sidewall adjoined to the surface. The polymer mixture is disposed on the pre-patterned structure, wherein the disposed polymer mixture has contact with the sidewall and the surface. The first polymer and the second polymer are segregated in a plane parallel to the surface, thereby forming a segregated structure comprising a first polymer domain and a second polymer domain.
    Type: Grant
    Filed: November 30, 2010
    Date of Patent: May 27, 2014
    Assignees: International Business Machines Corporation, JSR Corporation
    Inventors: Joy Cheng, Hayato Namai, Charles Thomas Rettner, Daniel Paul Sanders, Ratnam Sooriyakumaran
  • Patent number: 8703395
    Abstract: A pattern-forming method includes applying a photoresist composition to a substrate to form a resist film. The photoresist composition includes an acid generator and a first polymer that includes an acid-dissociable group. The resist film is exposed. The resist film is developed using a developer having an organic solvent content of 80 mass % or more to form a prepattern of the resist film. A polymer film having a phase separation structure in a space defined by the prepattern is formed using a composition that includes a plurality of second polymers. A part of the phase separation structure of the polymer film is removed.
    Type: Grant
    Filed: October 28, 2011
    Date of Patent: April 22, 2014
    Assignee: JSR Corporation
    Inventors: Hayato Namai, Hiroki Nakagawa, Kentaro Harada, Takehiko Naruoka
  • Publication number: 20130206727
    Abstract: A pattern-forming method includes forming a prepattern on a substrate. A space other than a space in which the prepattern is formed on the substrate is filled with a resin composition containing a compound which is diffusible into the prepattern. The compound is diffused into a part of the prepattern. Portions in which the compound is undiffused in the prepattern are removed using a removing liquid.
    Type: Application
    Filed: February 15, 2012
    Publication date: August 15, 2013
    Applicant: JSR Corporation
    Inventor: Hayato NAMAI
  • Publication number: 20130107235
    Abstract: A pattern-forming method includes applying a photoresist composition to a substrate to form a resist film. The photoresist composition includes an acid generator and a first polymer that includes an acid-dissociable group. The resist film is exposed. The resist film is developed using a developer having an organic solvent content of 80 mass % or more to form a prepattern of the resist film. A polymer film having a phase separation structure in a space defined by the prepattern is formed using a composition that includes a plurality of second polymers. A part of the phase separation structure of the polymer film is removed.
    Type: Application
    Filed: October 28, 2011
    Publication date: May 2, 2013
    Applicant: JSR Corporation
    Inventors: Hayato NAMAI, Hiroki Nakagawa, Kentaro Harada, Takehiko Naruoka
  • Publication number: 20120135146
    Abstract: Methods are disclosed for forming topographical features. In one method, a pre-patterned structure is provided which comprises i) a support member having a surface and ii) an element for topographically guiding segregation of a polymer mixture including a first polymer and a second polymer, the element comprising a feature having a sidewall adjoined to the surface. The polymer mixture is disposed on the pre-patterned structure, wherein the disposed polymer mixture has contact with the sidewall and the surface. The first polymer and the second polymer are segregated in a plane parallel to the surface, thereby forming a segregated structure comprising a first polymer domain and a second polymer domain.
    Type: Application
    Filed: November 30, 2010
    Publication date: May 31, 2012
    Applicants: JSR CORPORATION, INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Joy Cheng, Hayato Namai, Charles T. Rettner, Daniel P. Sanders, Ratnam Sooriyakumaran
  • Publication number: 20120103935
    Abstract: A method for processing a structure. The structure is formed and includes a substrate, a substructure having a sidewall and disposed on the substrate, a first polymer structure disposed on the substrate, and a second polymer structure disposed on the substrate such that the first polymer structure is disposed between the sidewall and the second polymer structure. An aspect ratio of the first polymer structure, the second polymer structure, or both is reduced in a reducing step. One polymer structure (i.e., the first polymer structure or the second polymer structure) is selectively removed from the structure such that a remaining polymer structure (i.e., the second polymer structure or the first polymer structure) remains disposed on the external surface of the substrate after the one polymer structure has been selectively removed, wherein the aspect ratio of the remaining polymer structure was reduced in the reducing step.
    Type: Application
    Filed: October 28, 2010
    Publication date: May 3, 2012
    Applicants: JSR CORPORATION, INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Joy Cheng, Hayato Namai, Daniel P. Sanders
  • Publication number: 20100167024
    Abstract: A negative-tone radiation-sensitive composition includes a polymer, a photoacid generator, and a solvent. The polymer has a polystyrene-reduced weight average molecular weight of 4000 to 200,000, and is obtained by hydrolysis and condensation of at least one hydrolyzable silane compound among compounds shown by RaSi(OR1)4-a, Si(OR2)4 and R3x(R4O)3-xSi—(R7)z—Si(OR5)3-yR6y. “R” represents a fluorine atom, an alkylcarbonyloxy group, or a linear or branched alkyl group having 1 to 5 carbon atoms. “R1” represents a monovalent organic group. “R2” represents a monovalent organic group. “R3” and “R6” individually represent a fluorine atom, an alkylcarbonyloxy group, or a linear or branched alkyl group having 1 to 5 carbon atoms “R4” and “R5” individually represent a monovalent organic group. “R7” represents an oxygen atom, a phenylene group, or a group —(CH2)m—. The content of units derived from the compound RaSi(OR1)4-a is 50 to 100 mol % of the total units forming the polymer.
    Type: Application
    Filed: December 24, 2009
    Publication date: July 1, 2010
    Applicant: JSR Corporation
    Inventors: Norihiro Natsume, Takanori Kishida, Hayato Namai, Kyoyu Yasuda, Satoshi Dei, Koichi Hasegawa
  • Publication number: 20090163743
    Abstract: An object of the present invention is to provide, inexpensively and safely, a luminescence system, a method of luminescence, and a luminescent substance based on a novel luminescence mechanism that luminesces at high efficiency. The present invention relates to a luminescence system, wherein a first chemical substance changes into a second chemical substance having a chemical structure that is different from that of the first chemical substance and thereby luminesces. The present invention preferably relates to the luminescence system, wherein the second chemical substance turns back into the first chemical substance after luminescence.
    Type: Application
    Filed: February 17, 2009
    Publication date: June 25, 2009
    Inventors: Yousuke HOSHI, Yoshii Morishita, Satoyuki Nomura, Yoshihiro Tsuda, Shigeaki Funyuu, Hiroshi Ikeda, Hayato Namai
  • Publication number: 20070138945
    Abstract: An object of the present invention is to provide, inexpensively and safely, a luminescence system, a method of luminescence, and a luminescent substance based on a novel luminescence mechanism that luminesces at high efficiency. The present invention relates to a luminescence system, wherein a first chemical substance changes into a second chemical substance having a chemical structure that is different from that of the first chemical substance and thereby luminesces. The present invention preferably relates to the luminescence system, wherein the second chemical substance turns back into the first chemical substance after luminescence.
    Type: Application
    Filed: December 22, 2004
    Publication date: June 21, 2007
    Applicant: HITACHI CHIEMICAL CO., LTD.,
    Inventors: Yousuke Hoshi, Yoshii Morishita, Satoyuki Nomura, Yoshihiro Tsuda, Shigeaki Funyuu, Hiroshi Ikeda, Hayato Namai