Patents by Inventor Heath A. Pois

Heath A. Pois has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210372787
    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.
    Type: Application
    Filed: June 8, 2021
    Publication date: December 2, 2021
    Applicant: NOVA MEASURING INSTRUMENTS INC.
    Inventors: Heath POIS, Wei T. LEE, Lawrence BOT, Michael KWAN, Mark KLARE, Charles LARSON
  • Patent number: 11029148
    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.
    Type: Grant
    Filed: May 12, 2020
    Date of Patent: June 8, 2021
    Assignee: NOVA MEASURING INSTRUMENTS, INC.
    Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
  • Publication number: 20210164924
    Abstract: A system and method for measuring a sample by X-ray reflectance scatterometry. The method may include impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles; and collecting at least a portion of the scattered X-ray beam.
    Type: Application
    Filed: December 8, 2020
    Publication date: June 3, 2021
    Applicant: NOVA MEASURING INSTRUMENTS LTD.
    Inventors: Heath POIS, David REED, Bruno SHUELER, Rodney SMEDT, Jeffrey FANTON
  • Patent number: 10859519
    Abstract: Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.
    Type: Grant
    Filed: November 18, 2019
    Date of Patent: December 8, 2020
    Assignee: NOVA MEASURING INSTRUMENTS, INC.
    Inventors: Heath A. Pois, David A. Reed, Bruno W. Schueler, Rodney Smedt, Jeffrey T. Fanton
  • Publication number: 20200370885
    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.
    Type: Application
    Filed: May 12, 2020
    Publication date: November 26, 2020
    Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
  • Publication number: 20200191734
    Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).
    Type: Application
    Filed: January 13, 2020
    Publication date: June 18, 2020
    Inventors: Wei Ti Lee, Heath Pois, Mark Klare, Cornel Bozdog
  • Patent number: 10648802
    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.
    Type: Grant
    Filed: August 8, 2019
    Date of Patent: May 12, 2020
    Assignee: NOVA MEASURING INSTRUMENTS, INC.
    Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
  • Publication number: 20200088656
    Abstract: Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.
    Type: Application
    Filed: November 18, 2019
    Publication date: March 19, 2020
    Inventors: Heath A. Pois, David A. Reed, Bruno W. Schueler, Rodney Smedt, Jeffrey T. Fanton
  • Patent number: 10533961
    Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).
    Type: Grant
    Filed: November 2, 2016
    Date of Patent: January 14, 2020
    Assignee: NOVA MEASURING INSTRUMENTS, INC.
    Inventors: Wei Ti Lee, Heath Pois, Mark Klare, Cornel Bozdog
  • Publication number: 20190360800
    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.
    Type: Application
    Filed: August 8, 2019
    Publication date: November 28, 2019
    Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
  • Patent number: 10481112
    Abstract: Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.
    Type: Grant
    Filed: November 5, 2018
    Date of Patent: November 19, 2019
    Assignee: NOVA MEASURING INSTRUMENTS INC.
    Inventors: Heath A. Pois, David A. Reed, Bruno W. Schueler, Rodney Smedt, Jeffrey T. Fanton
  • Publication number: 20190086342
    Abstract: Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.
    Type: Application
    Filed: November 5, 2018
    Publication date: March 21, 2019
    Inventors: Heath A. Pois, David A. Reed, Bruno W. Schueler, Rodney Smedt, Jeffrey T. Fanton
  • Publication number: 20190033069
    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.
    Type: Application
    Filed: September 24, 2018
    Publication date: January 31, 2019
    Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
  • Publication number: 20180328871
    Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).
    Type: Application
    Filed: November 2, 2016
    Publication date: November 15, 2018
    Inventors: Wei Ti Lee, Heath Pois, Mark Klare, Cornel Bozdog
  • Patent number: 10119925
    Abstract: Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: November 6, 2018
    Assignee: Nova Measuring Instruments Inc.
    Inventors: Heath A. Pois, David A. Reed, Bruno W. Schueler, Rodney Smedt, Jeffrey T. Fanton
  • Patent number: 10082390
    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technolgies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. A thickness of the first layer is determined based on the first XPS and XRF intensity signals. The information for the first layer and for the substrate is combined to estimate an effective substrate. Second XPS and XRF intensity signals are measured for a sample having a second layer above the first layer above the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.
    Type: Grant
    Filed: June 19, 2015
    Date of Patent: September 25, 2018
    Assignee: NOVA MEASURING INSTRUMENTS INC.
    Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
  • Publication number: 20180172609
    Abstract: A monitoring system and method are provided for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer. The monitoring system receives measured data comprising data indicative of optical measurements performed on the IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on the IC and data indicative of x-ray fluorescence spectroscopy (XRF) measurements performed on the IC. An optical data analyzer module analyzes the data indicative of the optical measurements and generates geometrical data indicative of one or more geometrical parameters of the multi-layer structure formed by at least the layer on top of the underlayer.
    Type: Application
    Filed: December 18, 2017
    Publication date: June 21, 2018
    Inventors: Wei Ti LEE, Heath A. POIS, Mark KLARE, Cornel BOZDOG, Alok VAID
  • Patent number: 9952166
    Abstract: Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both.
    Type: Grant
    Filed: March 9, 2017
    Date of Patent: April 24, 2018
    Assignee: Nova Measuring Instruments Inc.
    Inventors: Heath A. Pois, Wei Ti Lee
  • Publication number: 20170176354
    Abstract: Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.
    Type: Application
    Filed: March 6, 2017
    Publication date: June 22, 2017
    Inventors: Heath A. Pois, David A. Reed, Bruno W. Schueler, Rodney Smedt, Jeffrey T. Fanton
  • Publication number: 20170176357
    Abstract: Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both.
    Type: Application
    Filed: March 9, 2017
    Publication date: June 22, 2017
    Inventors: Heath A. Pois, Wei Ti Lee