Abstract: Disclosed is a video camera, including a body, a camera module installed in the body, and a stand located under the body to support, the stand including a leg bracket coupled to the body, a first leg rotatably coupled to the leg bracket through a first hinge, and a second leg rotatably coupled to an end portion of the first leg through a second hinge, wherein an angle and height of the body are adjustable by adjusting angles of the first and second hinges. Accordingly, the video camera can be installed not only on a floor, but also on a monitor or a wall, thereby being easily installed in various places.

Abstract: A semiconductor device has a first substrate and a first electrical component disposed over a first surface of the first substrate. A first encapsulant is deposited over the first electrical component and first surface of the first substrate. A modular interconnect unit is disposed over a second surface of the first substrate. A second encapsulant is deposited over the second surface of the first substrate. A second substrate is disposed over the second surface of the first substrate and electrically connected to the first substrate through the modular interconnect unit.

Abstract: A semiconductor device has a substrate. A first electrical component and second electrical component are disposed over the substrate. A zero-ohm resistor is disposed over the substrate between the first electrical component and second electrical component. An encapsulant is deposited over the substrate, first electrical component, second electrical component, and first zero-ohm resistor. An opening is formed through the encapsulant to the first zero-ohm resistor. A shielding layer is formed over the encapsulant and into the opening.

Abstract: A semiconductor device has a substrate including an antenna formed in a first area of the substrate. An electrical component is disposed over a second area of the substrate. An interconnect structure is disposed over a third area of the substrate. A first encapsulant is deposited over the electrical component and interconnect structure. A second encapsulant is disposed over the antenna. The second encapsulant includes a higher dielectric constant than the first encapsulant.

Abstract: A semiconductor device has a substrate and a first electrical component disposed over the substrate. An encapsulant is deposited over the first electrical component. A shielding layer is formed over the encapsulant. The shielding layer is patterned to form a conductive trace and a contact pad. A board-to-board (B2B) connector is disposed over the encapsulant and electrically coupled to the substrate by the conductive trace.

Abstract: Cesium-niobium-chalcogenide compounds and a semiconductor device are provided. The cesium-niobium-chalcogenide compound is selected from the group consisting of CsNbS3, CsNbSe3, and CsNbOx-3Qx, where Q is S or Se, and x is 1 or 2, and includes an edge-shared orthorhombic crystal structure. In one embodiment, the semiconductor device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, and the active layer includes the cesium-niobium-chalcogenide compound.

Abstract: A transport device inspection system includes a plurality of transport devices configured to move along a transport path, a diagnostic server configured to create inspection schedule information for the plurality of transport devices, an inspector configured to receive the inspection schedule information from the diagnostic server and to sequentially inspect the plurality of transport devices in accordance with the inspection schedule information, and a transport device controller configured to receive the inspection schedule information from the inspector and to control the plurality of transport devices to sequentially move to an inspection position in accordance with the inspection schedule information.

Abstract: Cesium-niobium-chalcogenide compounds and a semiconductor device are provided. The cesium-niobium-chalcogenide compound is selected from the group consisting of CsNbS3, CsNbSe3, and CsNbOx-3Qx, where Q is S or Se, and x is 1 or 2, and includes an edge-shared orthorhombic crystal structure. In one embodiment, the semiconductor device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, and the active layer includes the cesium-niobium-chalcogenide compound.

Abstract: A flexible TV is disclosed. The flexible TV includes a housing, a user interface configured to receive at least one command, a flexible display positioned in the housing, and a controller configured to control a door and a motor. In particular, the controller determines a range of the flexible display exposed to an outside of the housing by controlling at least one of the door or the motor according to a type of the command.

Abstract: Photovoltaic perovskite oxychalcogenide material and an optoelectronic device are provided. The optoelectronic device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer. In one embodiment, the active layer includes a perovskite oxychalcogenide compound and the perovskite oxychalcogenide compound is NaMO2Q, wherein M is Nb or Ta, and Q is S, Se or Te.

Abstract: A flexible TV is disclosed. The flexible TV includes a housing, a user interface configured to receive at least one command, a flexible display positioned in the housing, and a controller configured to control a door and a motor. In particular, the controller determines a range of the flexible display exposed to an outside of the housing by controlling at least one of the door or the motor according to a type of the command.

Abstract: Photovoltaic perovskite oxychalcogenide material and an optoelectronic device are provided. The optoelectronic device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer. In one embodiment, the active layer includes a perovskite oxychalcogenide compound and the perovskite oxychalcogenide compound is NaMO2Q, wherein M is Nb or Ta, and Q is S, Se or Te.