Patents by Inventor Hehe HU

Hehe HU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11133363
    Abstract: The present discloses an array substrate and a manufacturing method thereof, and a display device. The array substrate includes a first transistor and a second transistor. The first transistor includes a first active layer, a first gate, a first source and a first drain. The second transistor includes a second active layer, a second gate, a second source and a second drain. An orthographic projection of the second source on the base substrate and an orthographic projection of the second drain on the base substrate at least partially overlap. One of the second source and the second drain is in the same layer as and made from the same material as the first gate. The first source and the first drain are in the same layer as and made from the same material as the other of the second source and the second drain.
    Type: Grant
    Filed: August 30, 2019
    Date of Patent: September 28, 2021
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Ke Wang, Xinhong Lu, Hehe Hu, Wei Yang, Ce Ning
  • Patent number: 11092866
    Abstract: The present disclosure provides a display panel and a manufacturing method thereof, a driving method and a display device. The display panel includes: a base substrate and a thin film transistor on a surface of the base substrate. The thin film transistor includes: a gate, and a source and a drain arranged along a first direction, and a first passivation layer covering the gate, the source and the drain. a space region in which liquid crystal molecules are filled is formed in the first passivation layer. The space region is between the source and the drain. The source and the drain are configured to control rotation of the liquid crystal molecules.
    Type: Grant
    Filed: July 18, 2019
    Date of Patent: August 17, 2021
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Hehe Hu, Xiaochen Ma, Guangcai Yuan, Ce Ning, Xin Gu
  • Publication number: 20210226064
    Abstract: Provided are a thin film transistor including: a base cushion layer having a recessed portion, base insulating layer, source-drain layer and active layer. The base insulating layer is located on a side of the base cushion layer where the recessed portion is located, and has a first and second partition walls that are spaced apart, and an orthographic projection region of a gap region between the first and second partition walls onto the base cushion layer is located at a region where the recessed portion is located; and both orthographic projection regions of the first and second partition walls onto the base cushion layer partially overlap with the recessed portion region; and both the source-drain layer and the active layer are located on the side of the base insulating layer away from the base cushion layer.
    Type: Application
    Filed: November 19, 2019
    Publication date: July 22, 2021
    Inventors: Xiaochen Ma, Guangcai Yuan, Ce Ning, Xin Gu, Hehe Hu
  • Publication number: 20210220824
    Abstract: The present disclosure relates to a micro-channel device. The micro-channel device may include a micro-channel structure and a semiconductor junction. The micro-channel structure may include a base layer, a plurality of rails distributed on the base layer at intervals, and a cover layer comprising a plurality of columns. The cover layer and the base layer are configured to form a plurality of micro-channels. The semiconductor junction may include a P-type semiconductor layer, an intrinsic semiconductor layer and a N-type semiconductor layer stacked in a first direction.
    Type: Application
    Filed: April 16, 2019
    Publication date: July 22, 2021
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Ce Ning, Xiaochen Ma, Hehe Hu, Guangcai Yuan, Xin Gu
  • Publication number: 20210217784
    Abstract: An array substrate, a method for manufacturing an array substrate, and a display panel are provided. The array substrate includes: a base substrate; a thin film transistor on the base substrate; and a PIN diode on a side of the thin film transistor away from the base substrate, in a direction running away the base substrate from the thin film transistor, the PIN diode including a first electrical conduction type semiconductor layer and an intrinsic semiconductor layer and a second electrical conduction type semiconductor layer stacked in sequence, wherein a material from which the first electrical conduction type semiconductor layer is made includes one or more of following materials: metal oxide, metal sulfide, metal selenide, metal nitride, metal phosphide, or metal arsenide.
    Type: Application
    Filed: November 21, 2019
    Publication date: July 15, 2021
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Zhengliang Li, Jiayu He, Hehe Hu, Wenlin Zhang, Song Liu, Xiaochen Ma, Nianqi Yao, Jie Huang
  • Publication number: 20210210516
    Abstract: A thin film transistor and a method for fabricating the same, an array substrate and a display device are provided. The thin film transistor includes an active layer and a protective layer being provided on and in direct contact with the active layer, the protective layer is provided corresponding to a channel region of the thin film transistor; the protective layer is made of an oxygen-enriched metallic oxide insulation material which will not introduce any new element into the active layer. In the thin film transistor and the method for fabricating the same, the array substrate and the display device provided by the present disclosure, the active layer can be protected from being damaged by the etchant for forming the source/drain, and no new element will be introduced into the active layer; thus the characteristics and the stability of the thin film transistor is improved.
    Type: Application
    Filed: January 19, 2018
    Publication date: July 8, 2021
    Inventors: Ke WANG, Hehe HU, Xinhong LU
  • Patent number: 11004980
    Abstract: Disclosed are a thin film transistor and a manufacturing method therefor, an array substrate, a display panel and a display device. The thin film transistor includes a base substrate; a first electrode on the base substrate; a second electrode on the first electrode; an active layer provided on the base substrate and connecting the first electrode with the second electrode; and a gate electrode on the base substrate. The base substrate includes an upper surface facing towards the first electrode, the active layer includes a first side surface extending in a direction intersecting the upper surface of the base substrate, the first side surface connects the first electrode with the second electrode, and the gate electrode surrounds the first side surface.
    Type: Grant
    Filed: May 29, 2018
    Date of Patent: May 11, 2021
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: Hehe Hu
  • Publication number: 20210132428
    Abstract: A display substrate and a manufacturing method thereof and a display device are disclosed. The manufacturing method of the display substrate includes: forming a first display electrode; and forming a thin film transistor, which includes forming a semiconductor layer; The first display electrode and the semiconductor layer are in one same layer, and a step of forming the first display electrode is performed before performing a step of forming the semiconductor layer.
    Type: Application
    Filed: January 3, 2019
    Publication date: May 6, 2021
    Inventors: Wenjun XIAO, Shijun WANG, Hehe HU, Haoliang ZHENG, Xi CHEN, Xiaochuan CHEN, Guangcai YUAN
  • Publication number: 20210129140
    Abstract: A microfluidic channel structure and a fabrication method thereof, a microfluidic detecting device and a detecting method thereof are disclosed. The microfluidic channel structure includes a support portion; a foundation portion, provided on the support portion and including a first foundation and a second foundation spaced apart from each other; and a channel defining portion, provided on a side of the foundation portion that is away from the support portion and including a first channel layer and a second channel layer, the first channel layer covering the first foundation and the second channel layer covering the second foundation have a gap therebtween to define a microfluidic channel; and the first channel layer and the second channel layer are made of a same material.
    Type: Application
    Filed: September 24, 2019
    Publication date: May 6, 2021
    Inventors: Xiaochen MA, Guangcai YUAN, Ce NING, Xin GU, Hehe HU
  • Publication number: 20210091223
    Abstract: An oxide thin film transistor includes an oxide active layer, a first loose layer and a first oxygen release layer. The first loose layer is at least disposed on a first surface of the oxide active layer perpendicular to a thickness direction of the oxide active layer, and is in contact with the oxide active layer. A material of the first loose layer includes a first inorganic oxide insulating material. The first oxygen release layer is disposed on a surface of the first loose layer facing away from the oxide active layer, and is in contact with the first loose layer. A material of the first oxygen release layer is a first oxygen-containing insulating material.
    Type: Application
    Filed: May 18, 2020
    Publication date: March 25, 2021
    Inventors: Lizhong WANG, Tianmin ZHOU, Hehe HU, Shuilang DONG, Wenhua WANG, Nianqi YAO
  • Publication number: 20210063793
    Abstract: The present disclosure provides a display panel and a manufacturing method thereof, a driving method and a display device. The display panel includes: a base substrate and a thin film transistor on a surface of the base substrate. The thin film transistor includes: a gate, and a source and a drain arranged along a first direction, and a first passivation layer covering the gate, the source and the drain. a space region in which liquid crystal molecules are filled is formed in the first passivation layer. The space region is between the source and the drain. The source and the drain are configured to control rotation of the liquid crystal molecules.
    Type: Application
    Filed: July 18, 2019
    Publication date: March 4, 2021
    Inventors: Hehe HU, Xiaochen MA, Guangcai YUAN, Ce NING, Xin GU
  • Patent number: 10889504
    Abstract: An oxide semiconductor composition for use in thin film transistors includes indium oxide, zinc oxide, and an oxide including a doping element of scandium, such as scandium oxide. A molar percentage of the indium oxide can be larger than approximately 50%. The oxide semiconductor composition can have a formula of In2Sc2ZnO7. Manufacturing of the oxide semiconductor composition can include: mixing indium oxide powder, scandium oxide powder, and zinc oxide powder to thereby obtain an oxide shaped object; and sintering the oxide shaped object to form the oxide semiconductor composition. A thin-film transistor for use in a semiconductor device, such as a display apparatus, can include the oxide semiconductor composition, and can thereby have improved mobility of the oxide semiconductor due to the reduced oxygen vacancy therein.
    Type: Grant
    Filed: September 17, 2018
    Date of Patent: January 12, 2021
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Wenlin Zhang, Ce Ning, Hehe Hu, Zhengliang Li
  • Publication number: 20200409419
    Abstract: A display substrate, a display device, and a method of forming a display substrate are provided. The display substrate includes: a flexible base substrate and a plurality of pixel islands arranged on the flexible base substrate, where the plurality of pixel islands are arranged in an array, two adjacent pixel islands are connected through an island bridge, display units are arranged on the pixel islands, the display units on the pixel islands are electrically connected through an inter-island connection line arranged on the island bridge, a region outside the pixel islands and the island bridge is a hollow area, and axes of four island bridges around the hollow area are arranged as a parallelogram.
    Type: Application
    Filed: June 12, 2020
    Publication date: December 31, 2020
    Inventors: Jiayu HE, Xue LIU, Hehe HU, Zhengliang LI
  • Patent number: 10818694
    Abstract: The present disclosure relates to array substrate, preparation method thereof and display panel. An array substrate comprises: a first thin film transistor and a second thin film transistor over a substrate; wherein the first thin film transistor comprises a first portion of a first insulating layer, the first insulating layer comprises a first recess corresponding to the second thin film transistor, and the second thin film transistor is located in the first recess; and wherein a thickness of a second portion of the first insulating layer, which is below the bottom of the first recess, is smaller than that of the first portion of the first insulating layer.
    Type: Grant
    Filed: October 22, 2018
    Date of Patent: October 27, 2020
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Wei Yang, Hehe Hu, Xinhong Lu
  • Publication number: 20200220020
    Abstract: The present disclosure relates to a thin-film transistor, a method for preparing the same, and a display substrate. The method for preparing the thin-film transistor includes the steps of forming a source electrode, a drain electrode, and an active layer, in which the step of forming the source electrode, the drain electrode, and the active layer includes: forming a first thin film from a first metal oxide material in an atmosphere of a first oxygen content; and forming a second thin film from a second metal oxide material in an atmosphere of a second oxygen content, in which the first thin film is configured to form the active layer, the second thin film is configured to form a source electrode and a drain electrode, and the second oxygen content is less than the first oxygen content.
    Type: Application
    Filed: April 25, 2019
    Publication date: July 9, 2020
    Inventors: Wenlin ZHANG, Jianming SUN, Hehe HU
  • Publication number: 20200194553
    Abstract: The present application provides a TFT, a manufacturing method thereof, and a sensor. The TFT includes a substrate, and a source, a drain and an active layer on the substrate. The active layer includes a microchannel, and the thin film transistor is configured to detect a sample in the microchannel. When a sample to be detected enters the microchannel, the electron distribution in the active layer would be affected, which causes fluctuations in the TFT characteristics. By detecting such fluctuations, detecting the composition and property of the liquid to be detected may be achieved. Moreover, by virtue of the microchannel, the sample may be precisely controlled. The impact of the external environment may be reduced and the detection accuracy can be enhanced. Continuous monitoring instead of one-time detection of the sample may be achieved and the sample detection efficiency may be improved.
    Type: Application
    Filed: July 24, 2019
    Publication date: June 18, 2020
    Inventors: Xiaochen MA, Guangcai YUAN, Ce NING, Hehe HU, Xin GU
  • Patent number: 10651212
    Abstract: A thin film transistor array substrate, a method for manufacturing the same and a display device are provided. The TFT array substrate includes: a substrate, and a gate electrode, a common electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode arranged on the substrate. The TFT array substrate further includes: a pixel electrode, arranged on the gate insulation layer, overlapped with and jointed to the drain electrode; a passivation layer, arranged on the gate insulation layer and a channel between the source and drain electrodes; and a common electrode line, arranged on a plane identical to the pixel electrode.
    Type: Grant
    Filed: April 18, 2019
    Date of Patent: May 12, 2020
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: Hehe Hu
  • Patent number: 10629834
    Abstract: The present disclosure relates to the field of display, in particular to a thin film transistor, a method for preparing the same, and a display device. The thin film transistor of the present disclosure includes a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, a drain electrode, and a photoelectric conversion layer in contact with the gate electrode. The photoelectric conversion layer is configured to generate an induced potential in a light environment.
    Type: Grant
    Filed: August 28, 2018
    Date of Patent: April 21, 2020
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Song Liu, Yu Wen, Jianming Sun, Zhengliang Li, Xiaochen Ma, Hehe Hu, Wenlin Zhang, Jianhua Du, Ce Ning
  • Patent number: 10615284
    Abstract: The present disclosure provides a thin film transistor, a method for fabricating the same, a display substrate, and a display apparatus, and belongs to the field of display technology. The method includes: forming a metal oxide semiconductor pattern comprising first and second metal oxide semiconductor layers, the second metal oxide semiconductor layer being above the first metal oxide semiconductor layer; depositing a source-drain metal layer on the metal oxide semiconductor pattern; etching the source-drain metal layer and the second metal oxide semiconductor layer to form source and drain electrodes and an active layer of the thin film transistor. The active layer is obtained after removing the second metal oxide semiconductor layer between the source and drain electrodes using a first etchant, and the first etchant has a higher etching rate on the second metal oxide semiconductor layer than on the first metal oxide semiconductor layer.
    Type: Grant
    Filed: June 16, 2017
    Date of Patent: April 7, 2020
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Wei Yang, Ce Ning, Hehe Hu, Ke Wang
  • Publication number: 20200091263
    Abstract: The present discloses an array substrate and a manufacturing method thereof, and a display device. The array substrate includes a first transistor and a second transistor. The first transistor includes a first active layer, a first gate, a first source and a first drain. The second transistor includes a second active layer, a second gate, a second source and a second drain. An orthographic projection of the second source on the base substrate and an orthographic projection of the second drain on the base substrate at least partially overlap. One of the second source and the second drain is in the same layer as and made from the same material as the first gate. The first source and the first drain are in the same layer as and made from the same material as the other of the second source and the second drain.
    Type: Application
    Filed: August 30, 2019
    Publication date: March 19, 2020
    Inventors: Ke Wang, Xinhong Lu, Hehe Hu, Wei Yang, Ce Ning