Abstract: The present disclosure hereinafter proposes a charged particle beam device and a method for adjusting a charged particle beam device which aim to appropriately set device conditions independently of a state of a sample.

Abstract: An object of the present disclosure is to provide a charged particle beam system capable of obtaining information about a sample by using a feature amount on an observed image caused by light interference, light diffraction, light standing waves, and the like caused by irradiating a sample with light, and the like. In the charged particle beam system according to the present disclosure, a first feature amount resulting from the light interference, the light diffraction, or the light standing wave generated by irradiating the sample with light is extracted from the observed image of the sample, and a second feature amount of the sample is obtained by using the first feature amount (see FIG. 6).

Abstract: Provided is an inspection system capable of estimating electric characteristics of a sample with high accuracy regardless of an initial charging state of a wafer. The inspection system includes a charged particle beam device and a computer system, and inspects the electric characteristics of the sample. The inspection system evaluates initial charging of an inspection region including inspection patterns based on reference data indicating a secondary charged particle signal from a reference pattern corresponding to a plurality of pulse conditions. The reference pattern has the same electric characteristics as the inspection pattern and initial charging therein caused by electric charges that are not emitted according to a discharge time constant of the sample is negligible. The reference pattern is obtained by irradiating the reference pattern with a pulse charged particle beam under a plurality of pulse conditions.

Abstract: A system is provided in which electrical characteristics of an element formed on a sample can be evaluated. In order to achieve the above-described object, disclosed is a system including: an image acquisition tool; and a computer system that includes one or more processors and is configured to be communicable with the image acquisition tool, in which electrical characteristic are derived by receiving information regarding two or more characteristics of a specific pattern that is included in a plurality of images acquired from the image acquisition tool under at least two different image acquisition conditions and by referring to, for the information, relation information between information regarding two or more characteristics and electrical characteristics of an element formed on a sample, the characteristics being extracted from at least two pieces of image data acquired from the image acquisition tool under at least two image acquisition conditions.

Abstract: A system in which electrical characteristics of an element formed on a sample can be evaluated. The system includes an image acquisition tool and a computer system that includes one or more processors and is configured to be communicable with the image acquisition tool. Electrical characteristic are derived by the image acquisition tool by receiving information regarding two or more characteristics of a specific pattern that is included in a plurality of images acquired from the image acquisition tool under at least two different image acquisition conditions and by referring to, for the information, relation information between information regarding two or more characteristics and electrical characteristics of an element formed on a sample, the characteristics being extracted from at least two pieces of image data acquired from the image acquisition tool under at least two image acquisition conditions.

Abstract: A computing unit generates a to-be-used-in-computation netlist on the basis of a to-be-used-in-calculation device model corresponding to a correction sample, estimates a first application result, on the basis of the to-be-used-in-computation netlist and an optical condition, when a charged particle beam is applied to the correction sample under the optical condition, compares the first application result and a second application result based on a detection signal when the charged particle beam is applied to the correction sample under the optical condition, and corrects the optical condition when the first application result and the second application result differ from each other.

Abstract: An object of the present disclosure is to provide a system for deriving a type of defect of a semiconductor element and a non-transitory computer-readable medium. The system receives, from the image acquisition tool, image data obtained by sequentially irradiating a plurality of patterns provided on the semiconductor wafer with a beam and extracts characteristics of the plurality of patterns sequentially irradiated with a beam from the received image data, the characteristics being included in the image data, or receives characteristics of the plurality of patterns sequentially irradiated with a beam from the image acquisition tool, the characteristics being extracted from the image data (Step 603), and derives (Step 605) a type of a defect by referring to (Step 604) related information for the characteristics of the plurality of patterns, the related information storing the characteristics of the plurality of patterns and types of defects in association with each other.

Abstract: An object of the present disclosure is to provide a system for deriving a type of a defect of a semiconductor element and a non-transitory computer-readable medium. The system receives, from the image acquisition tool, image data obtained by sequentially irradiating a plurality of patterns provided on the semiconductor wafer with a beam and extracts characteristics of the plurality of patterns sequentially irradiated with a beam from the received image data, the characteristics being included in the image data, or receives characteristics of the plurality of patterns sequentially irradiated with a beam from the image acquisition tool, the characteristics being extracted from the image data (Step 603), and derives (Step 605) a type of a defect by referring to (Step 604) related information for the characteristics of the plurality of patterns, the related information storing the characteristics of the plurality of patterns and types of defects in association with each other.

Abstract: A charged particle beam apparatus includes a database that stores a to-be-used-in-calculation device model for use in estimation of a circuit of a sample and an optical condition under which a charged particle beam is applied to the sample, a charged particle beam optical system that controls the beam applied to the sample under the optical condition, a detector that detects secondary electrons emitted from the sample excited by the application of the beam and outputs a detection signal based on the secondary electrons, and a computing unit that generates a to-be-used-in-computation netlist based on the to-be-used-in-calculation device model, estimates a first application result when the beam is applied to the sample based on the to-be-used-in-computation netlist and the optical condition, and compares the first application result with a second application result when the beam is applied to the sample based on the optical condition.

Abstract: A charged particle beam device includes: a stage 124 on which a sample 108 is to be placed; a charged particle optical system including a charged particle source 113 and an objective lens 121 that focuses a charged particle beam from the charged particle source onto the sample; and a detector 123 disposed between the objective lens and the stage and configured to detect electrons 109 emitted by an interaction between the charged particle beam and the sample. The stage, the charged particle optical system, and the detector are housed in a vacuum housing 112, and the detector includes a scintillator 107, a solid-state photomultiplier tube 104, and a light guide 106 provided between the scintillator and the solid-state photomultiplier tube, and an area of a light receiving surface of the scintillator is larger than an area of a light receiving surface of the solid-state photomultiplier tube.

Abstract: A charged particle beam apparatus includes a database that stores a to-be-used-in-calculation device model for use in estimation of a circuit of a sample and an optical condition under which a charged particle beam is applied to the sample, a charged particle beam optical system that controls the beam applied to the sample under the optical condition, a detector that detects secondary electrons emitted from the sample excited by the application of the beam and outputs a detection signal based on the secondary electrons, and a computing unit that generates a to-be-used-in-computation netlist based on the to-be-used-in-calculation device model, estimates a first application result when the beam is applied to the sample based on the to-be-used-in-computation netlist and the optical condition, and compares the first application result with a second application result when the beam is applied to the sample based on the optical condition.

Abstract: A computing unit generates a to-be-used-in-computation netlist on the basis of a to-be-used-in-calculation device model corresponding to a correction sample, estimates a first application result, on the basis of the to-be-used-in-computation netlist and an optical condition, when a charged particle beam is applied to the correction sample under the optical condition, compares the first application result and a second application result based on a detection signal when the charged particle beam is applied to the correction sample under the optical condition, and corrects the optical condition when the first application result and the second application result differ from each other.

Abstract: Provided is a charged particle beam apparatus capable of estimating an internal device structure of a sample. The charged particle beam apparatus includes an electron beam optical system, a detector, and a calculator. The electron beam optical system irradiates a plurality of irradiation points on a sample, which are different in position or time, with an electron beam. The detector detects electrons emitted from the sample in response to irradiation of the electron beam by the electron beam optical system. The calculator calculates a dependence relationship between the irradiation points based on the electrons detected by the detector at the plurality of irradiation points.

Abstract: A charged particle beam apparatus includes a database that stores a to-be-used-in-calculation device model for use in estimation of a circuit of a sample and an optical condition under which a charged particle beam is applied to the sample, a charged particle beam optical system that controls the beam applied to the sample under the optical condition, a detector that detects secondary electrons emitted from the sample excited by the application of the beam and outputs a detection signal based on the secondary electrons, and a computing unit that generates a to-be-used-in-computation netlist based on the to-be-used-in-calculation device model, estimates a first application result when the beam is applied to the sample based on the to-be-used-in-computation netlist and the optical condition, and compares the first application result with a second application result when the beam is applied to the sample based on the optical condition.

Abstract: A computing unit generates a to-be-used-in-computation netlist on the basis of a to-be-used-in-calculation device model corresponding to a correction sample, estimates a first application result, on the basis of the to-be-used-in-computation netlist and an optical condition, when a charged particle beam is applied to the correction sample under the optical condition, compares the first application result and a second application result based on a detection signal when the charged particle beam is applied to the correction sample under the optical condition, and corrects the optical condition when the first application result and the second application result differ from each other.

Abstract: The purpose of the present disclosure is to propose a charged particle beam device capable of allowing specifying of a distance between irradiation points for a pulsed beam and a time between irradiation points.

Abstract: The present disclosure hereinafter proposes a charged particle beam device and a method for adjusting a charged particle beam device which aim to appropriately set device conditions independently of a state of a sample.

Abstract: Provided are a charged particle beam apparatus and a charged particle beam inspection system capable of estimating electrical characteristics of a sample including capacitance characteristics. The charged particle beam apparatus estimates electrical characteristics of the sample using the correspondence data representing the correspondence between the node of the netlist and the coordinate on the sample and the pulsing condition when the sample is irradiated with the charged particle beam in a pulsed manner. The charged particle beam optical system irradiates a predetermined coordinate on the sample with a charged particle beam based on a pulsing condition, and the detector actually measures an emission amount of electrons.

Abstract: Provided are a charged particle beam apparatus and a charged particle beam inspection system capable of estimating electrical characteristics of a sample including capacitance characteristics. The charged particle beam apparatus estimates electrical characteristics of the sample using the correspondence data representing the correspondence between the node of the netlist and the coordinate on the sample and the pulsing condition when the sample is irradiated with the charged particle beam in a pulsed manner. The charged particle beam optical system irradiates a predetermined coordinate on the sample with a charged particle beam based on a pulsing condition, and the detector actually measures an emission amount of electrons.

Abstract: A computing unit generates a to-be-used-in-computation netlist on the basis of a to-be-used-in-calculation device model corresponding to a correction sample, estimates a first application result, on the basis of the to-be-used-in-computation netlist and an optical condition, when a charged particle beam is applied to the correction sample under the optical condition, compares the first application result and a second application result based on a detection signal when the charged particle beam is applied to the correction sample under the optical condition, and corrects the optical condition when the first application result and the second application result differ from each other.