Patents by Inventor Helmut Schoenherr

Helmut Schoenherr has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10217644
    Abstract: In various aspects of the disclosure, a semiconductor device including at least one semiconductor die; a dielectric layer adjoining the semiconductor die; geometric structures formed in the dielectric layer; and a conductive layer deposited over the dielectric layer, wherein the conductive layer is at least partially located over the geometric structures.
    Type: Grant
    Filed: July 24, 2012
    Date of Patent: February 26, 2019
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Thomas Grille, Ursula Hedenig, Joern Plagmann, Helmut Schoenherr, Ralph Muth
  • Publication number: 20180247820
    Abstract: A method for depositing an insulating layer includes performing a primary deposition over a sidewall of a feature by depositing a layer of silicate glass using a silicon source at a first flow rate and a dopant source at a second flow rate. The method further includes performing a secondary deposition over the sidewall of a feature by increasing the flow of the silicon source relative to the flow of the dopant source. A reflow process is performed after stopping the flow. A variation in thickness of the layer of silicate glass over the sidewall of a feature after the reflow process is between 1% to 20%.
    Type: Application
    Filed: April 27, 2018
    Publication date: August 30, 2018
    Inventors: Juergen Steinbrenner, Markus Kahn, Helmut Schoenherr, Ravi Keshav Joshi, Heimo Hofer, Martin Poelzl, Harald Huetter
  • Patent number: 9728480
    Abstract: A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.
    Type: Grant
    Filed: April 29, 2015
    Date of Patent: August 8, 2017
    Assignee: Infineon Technologies AG
    Inventors: Kurt Matoy, Hubert Maier, Christian Krenn, Elfriede Kraxner Wellenzohn, Helmut Schoenherr, Juergen Steinbrenner, Markus Kahn, Silvana Fister, Christoph Brunner, Herbert Gietler, Uwe Hoeckele
  • Publication number: 20170011927
    Abstract: A method for depositing an insulating layer includes performing a primary deposition over a sidewall of a feature by depositing a layer of silicate glass using a silicon source at a first flow rate and a dopant source at a second flow rate. A ratio of the flow of the dopant source to the flow of the silicon source is a first ratio. The method further includes performing a secondary deposition over the sidewall of a feature by increasing the flow of the silicon source relative to the flow of the dopant source. The ratio of the flow of the dopant source to the flow of the silicon source is a second ratio lower than the first ratio, and stopping the flow of the silicon source after performing the secondary deposition. A reflow process is performed after stopping the flow. A variation in thickness of the layer of silicate glass over the sidewall of a feature after the reflow process is between 1% to 20%.
    Type: Application
    Filed: September 22, 2016
    Publication date: January 12, 2017
    Inventors: Juergen Steinbrenner, Markus Kahn, Helmut Schoenherr, Ravi Joshi, Heimo Hofer, Martin Poelzl, Harald Huetter
  • Patent number: 9478409
    Abstract: In various embodiments, a method for coating a workpiece is provided. The method may include drying a workpiece, the workpiece being coated with at least one oxide layer as an uppermost layer; depositing a dielectric layer over the uppermost layer of the dried workpiece; wherein the workpiece is continuously subject to a pressure which is lower than atmospheric pressure during the drying process and during the depositing process.
    Type: Grant
    Filed: January 12, 2015
    Date of Patent: October 25, 2016
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Juergen Steinbrenner, Markus Kahn, Helmut Schoenherr
  • Patent number: 9455136
    Abstract: A method for depositing an insulating layer includes performing a primary deposition over a sidewall of a feature by depositing a layer of silicate glass using a silicon source at a first flow rate and a dopant source at a second flow rate. A ratio of the flow of the dopant source to the flow of the silicon source is a first ratio. The method further includes performing a secondary deposition over the sidewall of a feature by increasing the flow of the silicon source relative to the flow of the dopant source. The ratio of the flow of the dopant source to the flow of the silicon source is a second ratio lower than the first ratio, and stopping the flow of the silicon source after performing the secondary deposition. A reflow process is performed after stopping the flow. A variation in thickness of the layer of silicate glass over the sidewall of a feature after the reflow process is between 1% to 20%.
    Type: Grant
    Filed: January 23, 2015
    Date of Patent: September 27, 2016
    Assignee: Infineon Technologies Austria AG
    Inventors: Juergen Steinbrenner, Markus Kahn, Helmut Schoenherr, Ravi Joshi, Heimo Hofer, Martin Poelzl, Harald Huetter
  • Publication number: 20160218002
    Abstract: A method for depositing an insulating layer includes performing a primary deposition over a sidewall of a feature by depositing a layer of silicate glass using a silicon source at a first flow rate and a dopant source at a second flow rate. A ratio of the flow of the dopant source to the flow of the silicon source is a first ratio. The method further includes performing a secondary deposition over the sidewall of a feature by increasing the flow of the silicon source relative to the flow of the dopant source. The ratio of the flow of the dopant source to the flow of the silicon source is a second ratio lower than the first ratio, and stopping the flow of the silicon source after performing the secondary deposition. A reflow process is performed after stopping the flow. A variation in thickness of the layer of silicate glass over the sidewall of a feature after the reflow process is between 1% to 20%.
    Type: Application
    Filed: January 23, 2015
    Publication date: July 28, 2016
    Inventors: Juergen Steinbrenner, Markus Kahn, Helmut Schoenherr, Ravi Joshi, Heimo Hofer, Martin Poelzl, Harald Huetter
  • Publication number: 20150340224
    Abstract: In various embodiments, a method for coating a workpiece is provided. The method may include drying a workpiece, the workpiece being coated with at least one oxide layer as an uppermost layer; depositing a dielectric layer over the uppermost layer of the dried workpiece; wherein the workpiece is continuously subject to a pressure which is lower than atmospheric pressure during the drying process and during the depositing process.
    Type: Application
    Filed: January 12, 2015
    Publication date: November 26, 2015
    Inventors: Juergen Steinbrenner, Markus Kahn, Helmut Schoenherr
  • Publication number: 20150235917
    Abstract: A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.
    Type: Application
    Filed: April 29, 2015
    Publication date: August 20, 2015
    Inventors: Kurt Matoy, Hubert Maier, Christian Krenn, Elfriede Kraxner Wellenzohn, Helmut Schoenherr, Juergen Steinbrenner, Markus Kahn, Silvana Fister, Christoph Brunner, Herbert Gietler, Uwe Hoeckele
  • Publication number: 20140335700
    Abstract: Carbon layers with reduced hydrogen content may be deposited by plasma-enhanced chemical vapor deposition by selecting processing parameters accordingly. Such carbon layers may be subjected to high temperature processing without showing excessive shrinking.
    Type: Application
    Filed: May 10, 2013
    Publication date: November 13, 2014
    Inventors: Guenter Denifl, Markus Kahn, Helmut Schoenherr, Daniel Maurer, Thomas Grille, Joachim Hirschler, Ursula Hedenig, Roland Moennich, Matthias Kuenle
  • Publication number: 20140117511
    Abstract: A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.
    Type: Application
    Filed: October 30, 2012
    Publication date: May 1, 2014
    Applicant: Infineon Technologies AG
    Inventors: Kurt Matoy, Hubert Maier, Christian Krenn, Elfriede Kraxner Wellenzohn, Helmut Schoenherr, Juergen Steinbrenner, Markus Kahn, Fister Schlemitz Silvana, Christoph Brunner, Herbert Gietler, Uwe Hoeckele
  • Publication number: 20140027915
    Abstract: In various aspects of the disclosure, a semiconductor device including at least one semiconductor die; a dielectric layer adjoining the semiconductor die; geometric structures formed in the dielectric layer; and a conductive layer deposited over the dielectric layer, wherein the conductive layer is at least partially located over the geometric structures.
    Type: Application
    Filed: July 24, 2012
    Publication date: January 30, 2014
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Thomas GRILLE, Ursula Hedenig, Joern Plagmann, Helmut Schoenherr, Ralph Muth