Patents by Inventor Hemant P. Mungekar
Hemant P. Mungekar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7740706Abstract: Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.Type: GrantFiled: November 28, 2006Date of Patent: June 22, 2010Assignee: Applied Materials, Inc.Inventors: Soonam Park, Farhan Ahmad, Hemant P. Mungekar, Sanjay Kamath, Young S. Lee, Siqing Lu
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Patent number: 7704897Abstract: The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation.Type: GrantFiled: February 22, 2008Date of Patent: April 27, 2010Assignee: Applied Materials, Inc.Inventors: Hemant P. Mungekar, Young S. Lee, Agnieszka Jakubowicz, Zhong Qiang Hua, Rionard Purnawan, Sanjay Kamath, Walter Zygmunt
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Patent number: 7678715Abstract: The present invention pertains to methods of depositing low wet etch rate silicon nitride films on substrates using high-density plasma chemical vapor deposition techniques at substrate temperatures below 600° C. The method additionally involves the maintenance of a relatively high ratio of nitrogen to silicon in the plasma and a low process pressure.Type: GrantFiled: December 21, 2007Date of Patent: March 16, 2010Assignee: Applied Materials, Inc.Inventors: Hemant P. Mungekar, Jing Wu, Young S. Lee, Anchuan Wang
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Patent number: 7628897Abstract: A film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a trench formed between adjacent raised surfaces. A first portion of the film is deposited over the substrate from a first gaseous mixture flowed into the process chamber by chemical-vapor deposition. Thereafter, the first portion is etched by flowing an etchant gas having a halogen precursor, a hydrogen precursor, and an oxygen precursor into the process chamber. Thereafter, a second portion of the film is deposited over the substrate from a second gaseous mixture flowed into the processing chamber by chemical-vapor deposition.Type: GrantFiled: September 12, 2003Date of Patent: December 8, 2009Assignee: Applied Materials, Inc.Inventors: Hemant P. Mungekar, Anjana M. Patel, Manoj Vellaikal, Anchuan Wang, Bikram Kapoor
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Publication number: 20090215281Abstract: The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation.Type: ApplicationFiled: February 22, 2008Publication date: August 27, 2009Applicant: Applied Materials, Inc.Inventors: HEMANT P. MUNGEKAR, Young S. Lee, Agnieszka Jakubowicz, Zhong Qiang Hua, Rionard Purnawan, Sanjay Kamath, Walter Zygmunt
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Publication number: 20090163041Abstract: The present invention pertains to methods of depositing low wet etch rate silicon nitride films on substrates using high-density plasma chemical vapor deposition techniques at substrate temperatures below 600° C. The method additionally involves the maintenance of a relatively high ratio of nitrogen to silicon in the plasma and a low process pressure.Type: ApplicationFiled: December 21, 2007Publication date: June 25, 2009Applicant: Applied Materials, Inc.Inventors: Hemant P. Mungekar, Jing Wu, Young S. Lee, Anchuan Wang
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Publication number: 20090093129Abstract: Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.Type: ApplicationFiled: October 17, 2008Publication date: April 9, 2009Applicant: Applied Materials, Inc.Inventors: Soonam Park, Farhan Ahmad, Hemant P. Mungekar, Sanjay Kamath, Young S. Lee, Siqing Lu
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Publication number: 20090075489Abstract: A processing chamber is seasoned by providing a flow of season precursors to the processing chamber. A high-density plasma is formed from the season precursors by applying at least 7500 W of source power distributed with greater than 70% of the source power at a top of the processing chamber. A season layer having a thickness of at least 5000 ? is deposited at one point using the high-density plasma. Each of multiple substrates is transferred sequentially into the processing chamber to perform a process that includes etching. The processing chamber is cleaned between sequential transfers of the substrates.Type: ApplicationFiled: September 4, 2008Publication date: March 19, 2009Applicant: Applied Materials, Inc.Inventors: Anchuan Wang, Young S. Lee, Manoj Vellaikal, Jason Thomas Bloking, Jin Ho Jeon, Hemant P. Mungekar
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Publication number: 20090068853Abstract: Methods are disclosed of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A first portion of the silicon oxide film is deposited over the substrate and within the gap using a high-density plasma process. Thereafter, a portion of the deposited first portion of the silicon oxide film is etched back. This includes flowing a halogen precursor through a first conduit from a halogen-precursor source to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the portion has been etched back. Thereafter, a halogen scavenger is flowed to the substrate processing chamber to react with residual halogen in the substrate processing chamber. Thereafter, a second portion of the silicon oxide film is deposited over the first portion of the silicon oxide film and within the gap using a high-density plasma process.Type: ApplicationFiled: September 4, 2008Publication date: March 12, 2009Applicant: Applied Materials, Inc.Inventors: Anchuan Wang, Young S. Lee, Manoj Vellaikal, Jason Thomas Bloking, Jin Ho Jeon, Hemant P. Mungekar
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Publication number: 20080299775Abstract: Methods are disclosed for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A silicon-containing gas, an oxygen-containing gas, and a fluent gas are flowed into the substrate processing chamber. A high-density plasma is formed from the silicon-containing gas, the oxygen-containing gas, and the fluent gas. A first portion of the silicon oxide film is deposited using the high-density plasma at a deposition rate between 900 and 6000 ?/min and with a deposition/sputter ratio greater than 30. The deposition/sputter ratio is defined as a ratio of a net deposition rate and a blanket sputtering rate to the blanket sputtering rate. Thereafter, a portion of the deposited first portion of the silicon oxide film is etched. A second portion of the silicon oxide film is deposited over the etched portion of the silicon oxide film.Type: ApplicationFiled: June 4, 2007Publication date: December 4, 2008Applicant: Applied Materials, Inc.Inventors: Anchuan Wang, Young S. Lee, Manoj Vellaikal, Jason Thomas Bloking, Jin Ho Jeon, Hemant P. Mungekar
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Publication number: 20080121179Abstract: Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.Type: ApplicationFiled: November 28, 2006Publication date: May 29, 2008Applicant: Applied Materials, Inc.Inventors: SOONAM PARK, Farhan Ahmad, Hemant P. Mungekar, Sanjay Kamath, Young S. Lee, Siqing Lu
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Publication number: 20080124944Abstract: Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.Type: ApplicationFiled: November 28, 2006Publication date: May 29, 2008Applicant: Applied Materials, Inc.Inventors: Soonam Park, Farhan Ahmad, Hemant P. Mungekar, Sanjay Kamath, Young S. Lee, Siqing Lu
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Patent number: 7329586Abstract: Methods deposit a film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. Flows of first precursor deposition gases are provided to the substrate processing chamber. A first high-density plasma is formed from the flows of first deposition gases to deposit a first portion of the film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components until after the gap has closed. A sufficient part of the first portion of the film is etched back to reopen the gap. Flows of second precursor deposition gases are provided to the substrate processing chamber. A second high-density plasma is formed from the flows of second precursor deposition gases to deposit a second portion of the film over the substrate and within the reopened gap with a second deposition process that has simultaneous deposition and sputtering components.Type: GrantFiled: June 24, 2005Date of Patent: February 12, 2008Assignees: Applied Materials, Inc., Matsushita Electric Industrial Co., Ltd.Inventors: Manoj Vellaikal, Hemant P. Mungekar, Young S. Lee, Yasutoshi Okuno, Hiroshi Yuasa
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Publication number: 20080029484Abstract: The concentration of various contaminants in a plasma can be monitored during processing of a substrate such as a silicon wafer, in order to prevent an unacceptable amount of contamination from being deposited on the substrate. The radiation emitted from the plasma through a window in the processing chamber during processing can be detected and measured by a tool such as an optical emission spectrograph (OES) and the relative intensity of peaks in the spectrum corresponding to various contaminants can be analyzed in order to determine contaminant concentration. In one embodiment, the concentration of aluminum in a plasma is monitored during a plasma chemical vapor deposition (CVD) process in order to ensure that the amount of aluminum in the produced device is lower than a maximum threshold amount.Type: ApplicationFiled: July 25, 2006Publication date: February 7, 2008Applicant: Applied Materials, Inc.Inventors: Soonam Park, Farhan Ahmad, Hemant P. Mungekar, Young S. Lee
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Patent number: 7229931Abstract: Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas having a silicon-containing gas, an oxygen-containing gas, and a fluent gas is flowed into the substrate processing chamber. The fluent gas is introduced into the substrate processing chamber at a flow rate of at least 500 sccm. A plasma is formed having an ion density of at least 1011 ions/cm3 from the process gas to deposit a first portion of the silicon oxide film over the substrate and into the gap. Thereafter, the deposited first portion is exposed to an oxygen plasma having at least 1011 ions/cm3. Thereafter, a second portion of the silicon oxide film is deposited over the substrate and into the gap.Type: GrantFiled: June 16, 2004Date of Patent: June 12, 2007Assignee: Applied Materials, Inc.Inventors: Hemant P. Mungekar, Young S Lee, Manoj Vellaikal, Karen Greig, Bikram Kapoor
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Publication number: 20040079728Abstract: A film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a trench formed between adjacent raised surfaces. A first portion of the film is deposited over the substrate from a first gaseous mixture flowed into the process chamber by chemical-vapor deposition. Thereafter, the first portion is etched by flowing an etchant gas having a halogen precursor, a hydrogen precursor, and an oxygen precursor into the process chamber. Thereafter, a second portion of the film is deposited over the substrate from a second gaseous mixture flowed into the processing chamber by chemical-vapor deposition.Type: ApplicationFiled: September 12, 2003Publication date: April 29, 2004Applicant: APPLIED MATERIALS, INC.Inventors: Hemant P. Mungekar, Anjana M. Patel, Manoj Vellaikal, Anchuan Wang, Bikram Kapoor