Abstract: Embodiments of the present invention generally relate to apparatus for and methods of measuring and monitoring the temperature of a substrate having a 3D feature thereon. The apparatus include a light source for irradiating a substrate having a 3D feature thereon, a focus lens for gathering and focusing reflected light, and an emissometer for detecting the emissivity of the focused reflected light. The apparatus may also include a beam splitter and an imaging device. The imaging device provides a magnified image of the diffraction pattern of the reflected light. The method includes irradiating a substrate having a 3D feature thereon with light, and focusing reflected light with a focusing lens. The focused light is then directed to a sensor and the emissivity of the substrate is measured. The reflected light may also impinge upon an imaging device to generate a magnified image of the diffraction pattern of the reflected light.

Abstract: Embodiments of methods for treating dielectric layers are provided herein. In some embodiments, a method of treating a dielectric layer disposed on a substrate supported in a process chamber includes: (a) exposing the dielectric layer to an active radical species formed in a plasma for a first period of time; (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius; and (c) maintaining the peak temperature for a second period of time of about 1 second to about 20 seconds.

Abstract: Embodiments of the present invention generally relate to a support ring for supporting a substrate during thermal processing in a process chamber. The support ring generally includes a ring body, an outer rib extending from a first surface of the ring body, a midrib extending from the first surface of the ring body, and a substrate support extending from a second surface of the ring body. The support ring reduces thermal coupling between a substrate and the support ring.

Abstract: Embodiments of methods for treating dielectric layers are provided herein. In some embodiments, a method of treating a dielectric layer disposed on a substrate supported in a process chamber includes: (a) exposing the dielectric layer to an active radical species formed in a plasma for a first period of time; (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius; and (c) maintaining the peak temperature for a second period of time of about 1 second to about 20 seconds.

Abstract: A system, method and device to interrogate for the presence of objects, to prevent the inadvertent separation of the objects from their owner. An owner is alerted when they are separated from the objects by determining when a trigger event occurs, such as a person leaving and/or entering a particular monitored area or location. These monitored areas can be retrofitted with an electronic interrogation device that monitors local conditions to determine whether a user is entering or leaving the monitored area to trigger an interrogation of the personal items. The interrogation device is constructed and arranged to communicate with the objects to determine whether the objects are with the owner. The interrogation device automatically determines the presence of a particular object at the monitored environment and automatically generates a notification when needed. The system further controls functionality of the objects, according to illustrative embodiments, when the object is present.

Abstract: A dry electrode manufacturing process employed for low cost battery through a dry mixing and formation process. A thermal activation renders the dry fabricated electrode comparable to conventional slurry casted electrodes. The dry electrode mixture results from a combination of a plurality of types of constituent particles, including at least an active charge material and a binder, and typically a conductive material such as carbon. The process heats the deposited mixture to a moderate temperature for activating the binder for adhering the mixture to the substrate; and compresses the deposited mixture to a thickness for achieving an electrical sufficiency of the compressed, deposited mixture as a charge material in a battery.

Abstract: Embodiments of the disclosure generally relate to a support ring that supports a substrate in a process chamber. In one embodiment, the support ring comprises an inner ring, an outer ring connecting to an outer perimeter of the inner ring through a flat portion, an edge lip extending radially inwardly from an inner perimeter of the inner ring to form a supporting ledge, and a substrate support extending upwardly from a top surface of the edge lip. The substrate support may be a continuous ring-shaped body disposed around a circumference of the edge lip. The substrate support supports a substrate about its entire periphery from the back side with minimized contact surface to thermally disconnect the substrate from the edge lip. Particularly, the substrate support provides a substantial line contact with the back surface of the substrate.

Abstract: Devices and methods for selectively oxidizing silicon are described herein. An apparatus for selective oxidation of exposed silicon surfaces includes a thermal processing chamber with a plurality of walls, first inlet connection and a second inlet connection, wherein the walls define a processing region within the processing chamber, a substrate support within the processing chamber, a hydrogen source connected with the first inlet connection, a heat source connected with the hydrogen source, and a remote plasma source connected with the second inlet connection and an oxygen source. A method for selective oxidation of non-metal surfaces, can include positioning a substrate in a processing chamber at a temperature less than 800° C., flowing hydrogen into the processing chamber, generating a remote plasma comprising oxygen, mixing the remote plasma with the hydrogen gas in the processing chamber to create an activated processing gas, and exposing the substrate to the activated gas.

Abstract: Disclosed are apparatus and methods for processing a substrate. The substrate having a feature with a layer thereon is exposed to an inductively coupled plasma which forms a substantially conformal layer.

Abstract: Embodiments of substrate support rings providing more uniform thickness of layers deposited or grown on a substrate are provided herein. In some embodiments, a substrate support ring includes: an inner ring with a centrally located support surface to support a substrate; and an outer ring extending radially outward from the support surface, wherein the outer ring comprises a reaction surface area disposed above and generally parallel to a support plane of the support surface, and wherein the reaction surface extends beyond the support surface by about 24 mm to about 45 mm.

Abstract: Disclosed are apparatus and methods for processing a substrate. The substrate having a feature with a layer thereon is exposed to an inductively coupled plasma which forms a substantially conformal layer.

Abstract: Embodiments of the present invention generally relate to a support ring for supporting a substrate during thermal processing in a process chamber. The support ring generally includes a ring body, an outer rib extending from a first surface of the ring body, a midrib extending from the first surface of the ring body, and a substrate support extending from a second surface of the ring body. The support ring reduces thermal coupling between a substrate and the support ring.

Abstract: Provided are methods post deposition treatment of films comprising SiN. Certain methods pertain to providing a film comprising SiN; and exposing the film to an inductively coupled plasma, capacitively coupled plasma or a microwave plasma to provide a treated film with a modulated film stress and/or wet etch rate in dilute HF. Certain other methods comprise depositing a PEALD SiN film followed by exposure to a plasma nitridation process or a UV treatment to provide a treated film.

Abstract: Embodiments of methods for treating dielectric layers are provided herein. In some embodiments, a method of treating a dielectric layer disposed on a substrate supported in a process chamber includes: (a) exposing the dielectric layer to an active radical species formed in a plasma for a first period of time; (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius; and (c) maintaining the peak temperature for a second period of time of about 1 second to about 20 seconds.

Abstract: Embodiments of the disclosure generally relate to a support ring that supports a substrate in a process chamber. In one embodiment, the support ring comprises an inner ring, an outer ring connecting to an outer perimeter of the inner ring through a flat portion, an edge lip extending radially inwardly from an inner perimeter of the inner ring to form a supporting ledge, and a substrate support extending upwardly from a top surface of the edge lip. The substrate support may be a continuous ring-shaped body disposed around a circumference of the edge lip. The substrate support supports a substrate about its entire periphery from the back side with minimized contact surface to thermally disconnect the substrate from the edge lip. Particularly, the substrate support provides a substantial line contact with the back surface of the substrate.

Abstract: A system, method and device to interrogate for the presence of objects, to prevent the inadvertent separation of the objects from their owner. An owner is alerted when they are separated from the objects by determining when a trigger event occurs, such as a person leaving and/or entering a particular monitored area or location. These monitored areas can be retrofitted with an electronic interrogation device that monitors local conditions to determine whether a user is entering or leaving the monitored area to trigger an interrogation of the personal items. The interrogation device is constructed and arranged to communicate with the objects to determine whether the objects are with the owner. The interrogation device automatically determines the presence of a particular object at the monitored environment and automatically generates a notification when needed. The system further controls functionality of the objects, according to illustrative embodiments, when the object is present.

Abstract: Devices and methods for selectively oxidizing silicon are described herein. An apparatus for selective oxidation of exposed silicon surfaces includes a thermal processing chamber with a plurality of walls, first inlet connection and a second inlet connection, wherein the walls define a processing region within the processing chamber, a substrate support within the processing chamber, a hydrogen source connected with the first inlet connection, a heat source connected with the hydrogen source, and a remote plasma source connected with the second inlet connection and an oxygen source. A method for selective oxidation of non-metal surfaces, can include positioning a substrate in a processing chamber at a temperature less than 800° C., flowing hydrogen into the processing chamber, generating a remote plasma comprising oxygen, mixing the remote plasma with the hydrogen gas in the processing chamber to create an activated processing gas, and exposing the substrate to the activated gas.

Abstract: A system, method and device to interrogate for the presence of objects, to prevent the inadvertent separation of the objects from their owner. An owner is alerted when they are separated from the objects by determining when a trigger event occurs, such as a person leaving and/or entering a particular monitored area or location. These monitored areas can be retrofitted with an electronic interrogation device that monitors local conditions to determine whether a user is entering or leaving the monitored area to trigger an interrogation of the personal items. The interrogation device is constructed and arranged to communicate with the objects to determine whether the objects are with the owner. The interrogation device automatically determines the presence of a particular object at the monitored environment and automatically generates a notification when needed. The system further controls functionality of the objects, according to illustrative embodiments, when the object is present.

Abstract: The present invention is directed to a system and method which base stations send informational messages to neighbor base stations when conditions change, so that the neighbor base stations can update its database to keep itself current on the parameters (including availability, traffic load, modulation scheme, etc.) to use in effecting efficient base station to base station handoffs. In one embodiment, the receiving base station marks the time of the received message from a neighbor base station and if a new updated message is not received within a time window then the receiving base station assumes that there is a problem with that neighbor.

Abstract: Embodiments of the present invention generally relate to apparatus for and methods of measuring and monitoring the temperature of a substrate having a 3D feature thereon. The apparatus include a light source for irradiating a substrate having a 3D feature thereon, a focus lens for gathering and focusing reflected light, and an emissometer for detecting the emissivity of the focused reflected light. The apparatus may also include a beam splitter and an imaging device. The imaging device provides a magnified image of the diffraction pattern of the reflected light. The method includes irradiating a substrate having a 3D feature thereon with light, and focusing reflected light with a focusing lens. The focused light is then directed to a sensor and the emissivity of the substrate is measured. The reflected light may also impinge upon an imaging device to generate a magnified image of the diffraction pattern of the reflected light.