Patents by Inventor Henricus Wilhelmus Maria Van Buel
Henricus Wilhelmus Maria Van Buel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230176491Abstract: Disclosed is a substrate and associated patterning device. The substrate comprises at least one target arrangement suitable for metrology of a lithographic process, the target arrangement comprising at least one pair of similar target regions which are arranged such that the target arrangement is, or at least the target regions for measurement in a single direction together are, centrosymmetric. A metrology method is also disclosed for measuring the substrate. A metrology method is also disclosed comprising which comprises measuring such a target arrangement and determining a value for a parameter of interest from the scattered radiation, while correcting for distortion of the metrology apparatus used.Type: ApplicationFiled: April 21, 2021Publication date: June 8, 2023Applicant: ASML Netherlands B.V.Inventors: Olger Victor ZWIER, Maurits VAN DER SCHAAR, Hilko Dirk BOS, Hans VAN DER LAAN, S.M. Masudur Rahman AL ARIF, Henricus Wilhelmus Maria Van Buel, Armand Eugene Albert KOOLEN, Victor CALADO, Kaustuve BHATTACHARYYA, Jin LIAN, Sebastianus Adrianus GOORDEN, Hui Quan LIM
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Publication number: 20230016664Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: ApplicationFiled: July 26, 2022Publication date: January 19, 2023Applicant: ASML NETHERLANDS B.V.Inventors: Kaustuve BHATTACHARYYA, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
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Patent number: 11428521Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: GrantFiled: November 5, 2021Date of Patent: August 30, 2022Assignee: ASML Netherlands B.V.Inventors: Kaustuve Bhattacharyya, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
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Publication number: 20220057192Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: ApplicationFiled: November 5, 2021Publication date: February 24, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Kaustuve BHATTACHARYYA, Henricus Wilhelmus Maria VAN BUEL, Christophe David FOUQUET, Hendrik Jan Hidde SMILDE, Maurits VAN DER SCHAAR, Arie Jeffrey DEN BOEF, Richard Johannes Franciscus VAN HAREN, Xing Lan LIU, Johannes Marcus Maria BELTMAN, Andreas FUCHS, Omer Abubaker Omer ADAM, Michael KUBIS, Martin Jacobus Johan JAK
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Patent number: 11204239Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: GrantFiled: July 17, 2020Date of Patent: December 21, 2021Assignee: ASML Netherlands B.V.Inventors: Kaustuve Bhattacharyya, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
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Patent number: 11123773Abstract: An apparatus (300) for removing contaminant particles (205) from a component (202, 204) of an apparatus (140, MT), the contaminant particles giving rise to an ambient electric field (E), the apparatus comprising: a collection region (301) for attracting the particles, wherein the ambient electric field is at least between the component and the collection region; and an electric field generator configured to establish an applied electric field between the collection region and the component to cause the particles to be transported from the component to the collection region, wherein the electric field generator is configured to determine the polarity of the applied electric field based on the ambient electric field.Type: GrantFiled: December 27, 2018Date of Patent: September 21, 2021Assignee: ASML Netherlands B.V.Inventors: Tim Peter Johan Gerard Maas, Bartolomeus Martinus Johannes Van Hout, Henricus Wilhelmus Maria Van Buel, Floris Zoethout
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Publication number: 20200348125Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: ApplicationFiled: July 17, 2020Publication date: November 5, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Kaustuve BHATTACHARYYA, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
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Patent number: 10718604Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: GrantFiled: July 10, 2019Date of Patent: July 21, 2020Assignee: ASML Netherlands B.V.Inventors: Kaustuve Bhattacharyya, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
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Publication number: 20190346256Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: ApplicationFiled: July 10, 2019Publication date: November 14, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Kaustuve BHATTACHARYYA, Henricus Wilhelmus Maria VAN BUEL, Christophe David FOUQUET, Hendrik Jan Hidde SMILDE, Maurits VAN DER SCHAAR, Arie Jeffrey DEN BOEF, Richard Johannes Franciscus VAN HAREN, Xing Lan LIU, Johannes Marcus Maria BELTMAN, Andreas FUCHS, Orner Abubaker Orner ADAM, Michael KUBIS, Martin Jacobus Johan JAK
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Patent number: 10386176Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: GrantFiled: August 25, 2015Date of Patent: August 20, 2019Assignee: ASML Netherlands B.V.Inventors: Kaustuve Bhattacharyya, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
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Publication number: 20190201943Abstract: An apparatus (300) for removing contaminant particles (205) from a component (202, 204) of an apparatus (140, MT), the contaminant particles giving rise to an ambient electric field (E), the apparatus comprising: a collection region (301) for attracting the particles, wherein the ambient electric field is at least between the component and the collection region; and an electric field generator configured to establish an applied electric field between the collection region and the component to cause the particles to be transported from the component to the collection region, wherein the electric field generator is configured to determine the polarity of the applied electric field based on the ambient electric field.Type: ApplicationFiled: December 27, 2018Publication date: July 4, 2019Applicant: ASML Netherlands B.V.Inventors: Tim Peter Johan Gerard MAAS, Bartolomeus Martinus Johannes VAN HOUT, Henricus Wilhelmus Maria VAN BUEL, Floris ZOETHOUT
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Patent number: 10331043Abstract: A method of devising a target arrangement, and associated target and reticle. The target includes a plurality of gratings, each grating having a plurality of substructures. The method includes: defining a target area; locating the substructures within the target area so as to form the gratings; and locating assist features at the periphery of the gratings, the assist features being configured to reduce measured intensity peaks at the periphery of the gratings. The method may include an optimization process including modelling a resultant image obtained by inspection of the target using a metrology process; and evaluating whether the target arrangement is optimized for detection using a metrology process.Type: GrantFiled: January 29, 2015Date of Patent: June 25, 2019Assignee: ASML Netherlands B.V.Inventors: Henricus Wilhelmus Maria Van Buel, Johannes Marcus Maria Beltman, Xing Lan Liu, Hendrik Jan Hidde Smilde, Richard Johannes Franciscus Van Haren
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Patent number: 10162272Abstract: A substrate has a plurality of overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values, each of the overall asymmetry measurements being weighted by a corresponding weight factor. Each one of the weight factors represents a measure of feature asymmetry within the respective overlay grating. The calculation is used to improve subsequent performance of the measurement process, and/or the lithographic process. Some of the asymmetry measurements may additionally be weighted by a second weight factor in order to eliminate or reduce the contribution of phase asymmetry to the overlay.Type: GrantFiled: August 18, 2016Date of Patent: December 25, 2018Assignee: ASML Netherlands B.V.Inventors: Martin Jacobus Johan Jak, Hendrik Jan Hidde Smilde, Te-Chih Huang, Victor Emanuel Calado, Henricus Wilhelmus Maria Van Buel, Richard Johannes Franciscus Van Haren
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Patent number: 10101677Abstract: An inspection apparatus (for example a scatterometer) comprises: a substrate support for supporting a substrate and an optical system. An illumination system illuminates a target (T) with radiation. A positioning system (518) moves one or both of the optical system and the substrate support so as to position an individual target (T) relative to the optical system so that the imaging optics can use a portion of the diffracted radiation to form an image of the target structure on an image sensor (23). A liquid lens (722) is controlled (902) by feed-forward control to maintain said image stationary against vibration and/or scanning movement between the optical system and the target structure. In a second aspect, a liquid lens (1324, 1363) to correct chromatic aberration during measurements made at different wavelengths. This may improve focusing of the illumination on the target (T), and/or focusing of an image on the image sensor (23).Type: GrantFiled: March 31, 2016Date of Patent: October 16, 2018Assignee: ASML Netherlands B.V.Inventors: Kim Gerard Feijen, Henricus Wilhelmus Maria Van Buel, Martinus Joseph Kok
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Publication number: 20170176871Abstract: A method of devising a target arrangement, and associated target and reticle. The target includes a plurality of gratings, each grating having a plurality of substructures. The method includes: defining a target area; locating the substructures within the target area so as to form the gratings; and locating assist features at the periphery of the gratings, the assist features being configured to reduce measured intensity peaks at the periphery of the gratings. The method may include an optimization process including modelling a resultant image obtained by inspection of the target using a metrology process; and evaluating whether the target arrangement is optimized for detection using a metrology process.Type: ApplicationFiled: January 29, 2015Publication date: June 22, 2017Applicant: ASML Netherlands B.V.Inventors: Henricus Wilhelmus Maria VAN BUEL, Johannes Marcus Maria BELTMAN, Xing Lan LIU, Hendrik Jan Hidde SMILDE, Richard Johannes Franciscus VAN HAREN
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Publication number: 20170052454Abstract: A substrate has a plurality of overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values, each of the overall asymmetry measurements being weighted by a corresponding weight factor. Each one of the weight factors represents a measure of feature asymmetry within the respective overlay grating. The calculation is used to improve subsequent performance of the measurement process, and/or the lithographic process. Some of the asymmetry measurements may additionally be weighted by a second weight factor in order to eliminate or reduce the contribution of phase asymmetry to the overlay.Type: ApplicationFiled: August 18, 2016Publication date: February 23, 2017Applicant: ASML NETHERLANDS B.V.Inventors: Martin Jacobus Johan JAK, Hendrik Jan Hidde SMILDE, Te-Chih HUANG, Victor Emanuel CALADO, Henricus Wilhelmus Maria VAN BUEL, Richard Johannes Franciscus VAN HAREN
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Publication number: 20160291479Abstract: An inspection apparatus (for example a scatterometer) comprises: a substrate support for supporting a substrate and an optical system. An illumination system illuminates a target (T) with radiation. A positioning system (518) moves one or both of the optical system and the substrate support so as to position an individual target (T) relative to the optical system so that the imaging optics can use a portion of the diffracted radiation to form an image of the target structure on an image sensor (23). A liquid lens (722) is controlled (902) by feed-forward control to maintain said image stationary against vibration and/or scanning movement between the optical system and the target structure. In a second aspect, a liquid lens (1324, 1363) to correct chromatic aberration during measurements made at different wavelengths. This may improve focusing of the illumination on the target (T), and/or focusing of an image on the image sensor (23).Type: ApplicationFiled: March 31, 2016Publication date: October 6, 2016Applicant: ASML Netherlands B.V.Inventors: Kim Gerard FEIJEN, Henricus Wilhelmus Maria Van Buel, Martinus Joseph Kok
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Publication number: 20160061589Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: ApplicationFiled: August 25, 2015Publication date: March 3, 2016Applicant: ASML NETHERLANDS B.V.Inventors: Kaustuve BHATTACHARYYA, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
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Patent number: 8576374Abstract: According to a first aspect of the invention, there is provided a lithographic method of providing an alignment mark on a layer provided on a substrate, the method including providing the alignment mark on an area of the layer which is oriented within a certain range of angles with respect to a surface of the substrate on which the layer is provided.Type: GrantFiled: February 26, 2009Date of Patent: November 5, 2013Assignee: ASML Netherlands B.V.Inventors: Keith Frank Best, Henricus Wilhelmus Maria Van Buel, Cheng-Qun Gui, Johannes Onvlee, Rudy Jan Maria Pellens, Remi Daniel Marie Edart, Oleg Viacheslavovich Voznyi, Pascale Anne Maury
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Patent number: 8395772Abstract: A sensor for an immersion system is disclosed. The sensor comprises: a sensing device, a transparent layer and an opaque patterning layer. The sensing device is configured to sense a property of a beam of radiation. The transparent layer is configured to allow the passage of a beam of radiation therethrough. The transparent layer covers the sensing device. The opaque patterning layer is configured to impart a pattern to the beam of radiation. In the patterning layer is an opening in which is located an infilling material. The infilling material is transparent to the beam of radiation and has a similar refractive index to that of the transparent layer.Type: GrantFiled: June 18, 2010Date of Patent: March 12, 2013Assignee: ASML Netherlands B.V.Inventors: Henricus Wilhelmus Maria Van Buel, Jeroen Thomas Broekhuijse, Vitaliy Prosyentsov, Sandra Van Der Graaf, Nina Vladimirovna Dziomkina