Abstract: Methods for forming data storage media and the media formed thereby are disclosed herein. In one embodiment, the method for forming a data storage media, comprises: injection molding a substrate comprising surface features, wherein said surface features have greater than about 90% of a surface feature replication of an original master; and disposing a data layer over at least one surface of said substrate; wherein said data storage media has an axial displacement peak of less than about 500? under shock or vibration excitation when excited by a 1 G sinusoidal loading.

Abstract: Methods for forming data storage media and the media formed thereby are disclosed herein. In one embodiment, the method for forming a data storage media, comprises: injection molding a substrate comprising surface features, wherein said surface features have greater than about 90% of a surface feature replication of an original master; and disposing a data layer over at least one surface of said substrate; wherein said data storage media has an axial displacement peak of less than about 500? under shock or vibration excitation.

Abstract: Large, light-weight organic devices and methods of preparing large, light-weight organic devices. Specifically, flexible and rigid light-weight plastics are implemented. The flexible plastic may be disposed from a reel. A metal grid is fabricated on the flexible plastic to provide current conduction over the large area. A transparent oxide layer is provided over the metal grid to form the bottom electrode of the organic device. A light emitting or light gathering organic layer is disposed on the transparent oxide layer. A second electrode is disposed over the organic layer. Electrodes are coupled to the metal grid and the second electrode to provide electrical current to or from the organic layer. Depending on the type of materials used for the organic layer, the organic device may comprise an area light device or a photovoltaic device.

Abstract: Methods for forming data storage media and the media formed thereby are disclosed herein. In one embodiment, the method for forming a data storage media, comprises: injection molding a substrate comprising surface features, wherein said surface features have greater than about 90% of a surface feature replication of an original master; and disposing a data layer over at least one surface of said substrate; wherein said data storage media has an axial displacement peak of less than about 500&mgr; under shock or vibration excitation.

Abstract: Large, light-weight organic devices and methods of preparing large, light-weight organic devices. Specifically, flexible and rigid light-weight plastics are implemented. The flexible plastic may be disposed from a reel. A metal grid is fabricated on the flexible plastic to provide current conduction over the large area. A transparent oxide layer is provided over the metal grid to form the bottom electrode of the organic device. A light emitting or light gathering organic layer is disposed on the transparent oxide layer. A second electrode is disposed over the organic layer. Electrodes are coupled to the metal grid and the second electrode to provide electrical current to or from the organic layer. Depending on the type of materials used for the organic layer, the organic device may comprise an area light device or a photovoltaic device.

Abstract: Methods for forming data storage media and the media formed thereby are disclosed herein. In one embodiment, the method for forming a data storage media, comprises: injection molding a substrate comprising surface features, wherein said surface features have greater than about 90% of a surface feature replication of an original master; and disposing a data layer over at least one surface of said substrate; wherein said data storage media has an axial displacement peak of less than about 500&mgr; under shock or vibration excitation.

Abstract: The data storage media comprises, in a preferred embodiment, a homogenous or non-homogenous plastic substrate that can be formed in situ with the desired surface features disposed thereon on one or both sides, a data storage layer such as a magneto-optic material also on one or both sides, and an optional protective, dielectric, and/or reflective layers. The substrate can have a substantially homogenous, tapered, concave, or convex geometry, with various types and geometries of reinforcement employed to increase stiffness without adversely effecting surface integrity and smoothness.

Abstract: Methods for forming data storage media and the media formed thereby are disclosed herein. In one embodiment, the method for forming a data storage media, comprises: injection molding a substrate comprising surface features, wherein said surface features have greater than about 90% of a surface feature replication of an original master; and disposing a data layer over at least one surface of said substrate; wherein said data storage media has an axial displacement peak of less than about 500&mgr; under shock or vibration excitation.

Abstract: An electronic structure includes a circuit chip having chip pads and supported by a substrate, and a low dielectric constant porous polymer layer having pores and situated over the substrate and circuit chip. The porous polymer layer has at least one via therein aligned with at least one of the chip pads, and a pattern of electrical conductors extends over a portion of the porous polymer layer and into the at least one via. The pattern of electrical conductors does not significantly protrude into the pores of the porous polymer layer.

Abstract: HDI fabrication techniques are employed to form a variety of optical waveguide structures in polymer materials. Adaptive optical connections are formed, taking into account the actual position and orientation of devices which may deviate from the ideal. Structures include solid light-conducting structures, hollow light-conducting structures which are also suitable for conducting cooling fluid, and optical switching devices employing liquid crystal material. A "shrink back" method may be used to form a tunnel in polymer material which is then filled with an uncured polymer material that shrinks upon curing.

Abstract: A method for processing a low dielectric constant material includes dispersing an additive material in a porous low dielectric constant layer, fabricating a desired electronic structure, and then removing the additive material from the pores of the low dielectric constant layer. The removal of the additive material from the pores can be accomplished by sublimation, evaporation, and diffusion. Applications for the low dielectric constant layer include the use as an overlay layer for interconnecting a circuit chip supported by a substrate and the use as printed circuit board material.

Abstract: In a method for preserving an air bridge structure on an integrated circuit chip, without sacrificing metallization routing area in an overlying high density interconnect structure, a protective layer is sublimed over the air bridge to provide mechanical strength while preventing contamination and deformation during processing. A high density interconnect structure is applied over the chip and protective layer. A small portion of the high density interconnect structure is removed from the area over the air bridge structure, and the protective layer is then sublimed away, leaving the resultant structure with an undamaged air bridge which is free of residue.

Abstract: Polyetherimide compositions are provided having condensed bis (4-aminophenyl) sulfone units, diaminophenylindane units or a mixture thereof. These polyetherimides compositions have been found useful for making high temperature chip adhesives, laminating adhesives and film adhesives for high density interconnects in electronic circuitry.

Abstract: A method for fabricating a circuit module includes applying an outer insulative layer over a first patterned metallization layer on a first surface of a base insulative layer. A second surface of the base insulative layer has a second patterned metallization layer. At least one circuit chip having chip pads is attached to the second surface of the base insulative layer. Respective vias are formed to expose selected portions of the first patterned metallization layer, the second patterned metallization layer, and the chip pads. A patterned outer metallization layer is applied over the outer insulative layer to extend through selected ones of the vias to interconnect selected ones of the chip pads and selected portions of the first and second metallization layers.

Abstract: HDI fabrication techniques are employed to form a variety of optical waveguide structures in polymer materials. Adaptive optical connections are formed, taking into account the actual position and orientation of devices which may deviate from the ideal. Structures include solid light-conducting structures, hollow light-conducting structures which are also suitable for conducting cooling fluid, and optical switching devices employing liquid crystal material. A "shrink back" method may be used to form a tunnel in polymer material which is then filled with an uncured polymer material that shrinks upon curing.

Abstract: Substrate material is molded directly to semiconductor chips and other electrical components that are positioned for integrated circuit module fabrication. Chips having contact pads are placed face down on a layer of adhesive supported by a base. A mold form is positioned around the chips. Substrate molding material is added within the mold form, and the substrate molding material is then hardened. A dielectric layer having vias aligned with predetermined ones of the contact pads and having an electrical conductor extending through the vias is situated on the hardened substrate molding material and the faces of the chips. A thermal plug may be affixed to the backside of a chip before substrate molding material is added. A connector frame may be placed on the adhesive layer before substrate molding material is added. A dielectric layer may be placed over the backsides of the chips before the substrate molding material is added to enhance repairability.

Abstract: A reconstructible electrical circuit module includes a substrate, at least one electrical circuit component and an electrical interconnection structure. The electrical interconnection structure includes at least one multiple ply sequence stacked over the component and substrate in which the portion of the module underlying a ply in the electrical interconnection structure is substantially unimpairable by a process for removing that ply.

Abstract: A method for processing a low dielectric constant material includes dispersing an additive material in a porous low dielectric constant layer, fabricating a desired electronic structure, and then removing the additive material from the pores of the low dielectric constant layer. The removal of the additive material from the pores can be accomplished by sublimation, evaporation, and diffusion. Applications for the low dielectric constant layer include the use as an overlay layer for interconnecting a circuit chip supported by a substrate and the use as printed circuit board material.

Abstract: A multichip module (incorporating a high density interconnect structure) has: a first portion containing a substrate with semiconductor chips therein, with each chip having contact pads; a second portion comprising a (HDI) structure interconnecting the chip pads; and a solvent-soluble release layer bonding the two portions together and allowing for easy removal of the HDI structure from the substrate of the module by immersion in an appropriate solvent for the release layer.

Abstract: In a method for preserving an air bridge structure on an integrated circuit chip used in an overlay process, a patternable protective layer is applied for providing mechanical strength to prevent deformation during subsequent processing. A polymeric film layer is applied over the chip and protective layer, and interconnections are fabricated through the polymeric film layer. The polymeric film layer is removed from the area over the air bridge structure. The patternable protective layer is then removed, leaving the resultant structure with an undamaged air bridge which is free of residue.