Patents by Inventor Hessel Sprey
Hessel Sprey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20220384197Abstract: The current disclosure relates to deposition of a transition metal chalcogenide barrier layer. The method of depositing a transition metal chalcogenide barrier layer comprises providing a substrate having an opening into a reaction chamber, providing a transition metal precursor in the reaction chamber in vapor phase and providing an reactive chalcogen species in the reaction chamber. The method may be a plasma-enhanced atomic layer deposition method. The disclosure further relates to an interconnect comprising a transition metal chalcogenide barrier layer.Type: ApplicationFiled: May 25, 2022Publication date: December 1, 2022Inventors: Johanna Henrica Deijkers, Adriaan Jacobus Martinus Mackus, Ageeth Anke Bol, Wilhelmus M. M. Kessels, Hessel Sprey, Jan Willem Maes
-
Patent number: 11088002Abstract: The invention relates to a substrate rack and a substrate processing system for processing substrates in a reaction chamber. The substrate rack may be used for introducing a plurality of substrates in the reaction chamber. The substrate rack may have a plurality of spaced apart substrate holding provisions configured to hold the substrates in a spaced apart relationship. The rack may have an illumination system to irradiate radiation with a range from 100 to 500 nanometers onto a top surface of the substrates.Type: GrantFiled: March 29, 2018Date of Patent: August 10, 2021Assignee: ASM IP Holding B.V.Inventors: Dieter Pierreux, Werner Knaepen, Bert Jongbloed, Cornelis Thaddeus Herbschleb, Hessel Sprey
-
Patent number: 10699899Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.Type: GrantFiled: August 20, 2018Date of Patent: June 30, 2020Assignee: ASM International N.V.Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David de Roest, Dieter Pierreux, Kees van der Jeugd, Lucia D'Urzo, Tom E. Blomberg
-
Publication number: 20190304821Abstract: The invention relates to a substrate rack and a substrate processing system for processing substrates in a reaction chamber. The substrate rack may be used for introducing a plurality of substrates in the reaction chamber. The substrate rack may have a plurality of spaced apart substrate holding provisions configured to hold the substrates in a spaced apart relationship. The rack may have an illumination system to irradiate radiation with a range from 100 to 500 nanometers onto a top surface of the substrates.Type: ApplicationFiled: March 29, 2018Publication date: October 3, 2019Inventors: Dieter Pierreux, Werner Knaepen, Bert Jongbloed, Cornelis Thaddeus Herbschleb, Hessel Sprey
-
Publication number: 20190103266Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.Type: ApplicationFiled: August 20, 2018Publication date: April 4, 2019Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David de Roest, Dieter Pierreux, Kees van der Jeugd, Lucia D'Urzo, Tom E. Blomberg
-
Patent number: 10056249Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.Type: GrantFiled: November 22, 2016Date of Patent: August 21, 2018Assignee: ASM International N.V.Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David de Roest, Dieter Pierreux, Kees van der Jeugd, Lucia D'Urzo, Tom E. Blomberg
-
Publication number: 20170140918Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.Type: ApplicationFiled: November 22, 2016Publication date: May 18, 2017Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David de Roest, Dieter Pierreux, Kees van der Jeugd, Lucia D'Urzo, Tom E. Blomberg
-
Patent number: 9552979Abstract: A process for depositing aluminum nitride is disclosed. The process comprises providing a plurality of semiconductor substrates in a batch process chamber and depositing an aluminum nitride layer on the substrates by performing a plurality of deposition cycles without exposing the substrates to plasma during the deposition cycles. Each deposition cycle comprises flowing an aluminum precursor pulse into the batch process chamber, removing the aluminum precursor from the batch process chamber, and removing the nitrogen precursor from the batch process chamber after flowing the nitrogen precursor and before flowing another pulse of the aluminum precursor. The process chamber may be a hot wall process chamber and the deposition may occur at a deposition pressure of less than 1 Torr.Type: GrantFiled: May 31, 2013Date of Patent: January 24, 2017Assignee: ASM IP HOLDING B.V.Inventors: Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Peter Zagwijn, Hessel Sprey, Cornelius A. van der Jeugd, Marinus Josephus de Blank, Robin Roelofs, Qi Xie, Jan Willem Maes
-
Patent number: 9514934Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.Type: GrantFiled: March 13, 2015Date of Patent: December 6, 2016Assignee: ASM International N.V.Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David De Roest, Dieter Pierreux, Kees Van Der Jeugd, Lucia D'Urzo, Tom E. Blomberg
-
Publication number: 20150249005Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.Type: ApplicationFiled: March 13, 2015Publication date: September 3, 2015Inventors: RAIJA H. MATERO, LINDA LINDROOS, HESSEL SPREY, JAN WILLEM MAES, DAVID DE ROEST, DIETER PIERREUX, KEES VAN DER JEUGD, LUCIA D'URZO, TOM E. BLOMBERG
-
Patent number: 9006112Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.Type: GrantFiled: October 11, 2012Date of Patent: April 14, 2015Assignee: ASM International N.V.Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David de Roest, Dieter Pierreux, Kees van der Jeugd, Lucia D'Urzo, Tom E. Blomberg
-
Publication number: 20140357090Abstract: A process for depositing aluminum nitride is disclosed. The process comprises providing a plurality of semiconductor substrates in a batch process chamber and depositing an aluminum nitride layer on the substrates by performing a plurality of deposition cycles without exposing the substrates to plasma during the deposition cycles. Each deposition cycle comprises flowing an aluminum precursor pulse into the batch process chamber, removing the aluminum precursor from the batch process chamber, and removing the nitrogen precursor from the batch process chamber after flowing the nitrogen precursor and before flowing another pulse of the aluminum precursor. The process chamber may be a hot wall process chamber and the deposition may occur at a deposition pressure of less than 1 Torr.Type: ApplicationFiled: May 31, 2013Publication date: December 4, 2014Inventors: Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Peter Zagwijn, Hessel Sprey, Cornelius A. van der Jeugd, Marinus Josephus de Blank, Robin Roelofs, Qi Xie, Jan Willem Maes
-
Patent number: 8652573Abstract: Method of depositing a film having a substantially uniform thickness by means of chemical vapor deposition, comprising: providing a reaction chamber; providing a substrate in said reaction chamber; subjecting the substrate to a series of deposition cycles, wherein each deposition cycle includes the steps of: (a) during a first time interval, supplying a first reactant to the reaction chamber; (b) during a second time interval, supplying a second reactant to the reaction chamber; and (c) during a third time interval, supplying neither the first nor the second reactant to the reaction chamber; wherein a start of the second time interval lies within the first time interval, such that a pre-exposure interval exists between a start of the first time interval and the start of the second time interval, during which pre-exposure interval the first reactant is supplied to the reaction chamber while the second reactant is not.Type: GrantFiled: July 14, 2011Date of Patent: February 18, 2014Assignee: ASM International N.V.Inventors: Maarten Stokhof, Hessel Sprey, Tatsuya Yoshimi, Bert Jongbloed, Noureddine Adjeroud
-
Publication number: 20120015105Abstract: Method of depositing a film having a substantially uniform thickness by means of chemical vapor deposition, comprising: providing a reaction chamber; providing a substrate in said reaction chamber; subjecting the substrate to a series of deposition cycles, wherein each deposition cycle includes the steps of: (a) during a first time interval, supplying a first reactant to the reaction chamber; (b) during a second time interval, supplying a second reactant to the reaction chamber; and (c) during a third time interval, supplying neither the first nor the second reactant to the reaction chamber; wherein a start of the second time interval lies within the first time interval, such that a pre-exposure interval exists between a start of the first time interval and the start of the second time interval, during which pre-exposure interval the first reactant is supplied to the reaction chamber while the second reactant is not.Type: ApplicationFiled: July 14, 2011Publication date: January 19, 2012Inventors: Maarten Stokhof, Hessel Sprey, Yoshimi Tatsuya, Bert Jongbloed, Noureddine Adjeroud
-
Publication number: 20110256718Abstract: Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g.Type: ApplicationFiled: April 4, 2011Publication date: October 20, 2011Applicant: ASM INTERNATIONAL N.V.Inventors: Suvi P. Haukka, Ivo Raaijmakers, Wei Min Li, Juhana Kostamo, Hessel Sprey, Christiaan J. Werkhoven
-
Patent number: 7981791Abstract: Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g.Type: GrantFiled: August 29, 2008Date of Patent: July 19, 2011Assignee: ASM International N.V.Inventors: Suvi P. Haukka, Ivo Raaijmakers, Wei Min Li, Juhana Kostamo, Hessel Sprey, Christiaan J. Werkhoven
-
Patent number: 7884016Abstract: In some embodiments, a low-k dielectric film liner, preferably comprising benzocyclobutene, is deposited on the sidewalls of through-silicon vias used in three-dimensional (3-D) integration of integrated circuits. A semiconductor workpiece having a via is provided. A dielectric film liner, preferably comprising benzocyclobutene, is deposited on the sidewalls of the via by chemical vapor deposition. Following the deposition of the dielectric film liner, conductive material is deposited into the via. The conductive material on the bottom of the via can be exposed by thinning the back of the semiconductor workpiece, thereby forming a through-silicon via. The semiconductor workpiece can form a stack with one or more additional semiconductor workpieces having vias filled with conductive material to form a 3-D integrated circuit. The conductive material electrically interconnects the integrated circuits at different levels of the stack.Type: GrantFiled: February 12, 2009Date of Patent: February 8, 2011Assignee: ASM International, N.V.Inventors: Hessel Sprey, Akinori Nakano
-
Publication number: 20100200989Abstract: In some embodiments, a low-k dielectric film liner, preferably comprising benzocyclobutene, is deposited on the sidewalls of through-silicon vias used in three-dimensional (3-D) integration of integrated circuits. A semiconductor workpiece having a via is provided. A dielectric film liner, preferably comprising benzocyclobutene, is deposited on the sidewalls of the via by chemical vapor deposition. Following the deposition of the dielectric film liner, conductive material is deposited into the via. The conductive material on the bottom of the via can be exposed by thinning the back of the semiconductor workpiece, thereby forming a through-silicon via. The semiconductor workpiece can form a stack with one or more additional semiconductor workpieces having vias filled with conductive material to form a 3-D integrated circuit. The conductive material electrically interconnects the integrated circuits at different levels of the stack.Type: ApplicationFiled: February 12, 2009Publication date: August 12, 2010Applicant: ASM International, N.V.Inventors: Hessel Sprey, Akinori Nakano
-
Publication number: 20090269939Abstract: Methods for selective oxidation using pulses of an oxidizing agent are described. An oxidation process is provided in which a pulse of an oxidizing agent is followed by a flow of a purging agent. The pulse of the oxidizing agent and the flow of the purging agent forms a cycle that can be repeated to allow for desired oxidation on parts of a structure, e.g., a transistor structure, while preventing or limiting undesired oxidation on other parts of the structure. In addition, during the oxidation, a nitrogen source such as N2, NH3, N2H4 or combinations thereof, can be provided to enhance the selectivity of the oxidation process. The nitrogen source can act as an oxygen scavenger to enhance oxidation selectively, or undesired oxidation can also be further prevented or limited by introducing other oxygen scavengers, such as hydrazine.Type: ApplicationFiled: February 27, 2009Publication date: October 29, 2009Applicant: ASM International, N.V.Inventor: Hessel Sprey
-
Publication number: 20090068832Abstract: Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g.Type: ApplicationFiled: August 29, 2008Publication date: March 12, 2009Applicant: ASM INTERNATIONAL N.V.Inventors: Suvi P. Haukka, Ivo Raaijmakers, Wei Min Li, Juhana Kostamo, Hessel Sprey, Christrian J. Werkhoven