Patents by Inventor Hideharu Matsuzaki

Hideharu Matsuzaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210310113
    Abstract: A multilayer film includes: an Ag alloy film; and a transparent dielectric film laminated on both surfaces of the Ag alloy film, and in the Ag alloy film, at least one of Sn or Ge is contained in a range of 0.5 atom % to 8.0 atom % in total, a total content of Na, K, Ba, and Te is 50 ppm by mass or less, a carbon content is 50 ppm by mass or less, and a remainder contains Ag and unavoidable impurities.
    Type: Application
    Filed: October 3, 2018
    Publication date: October 7, 2021
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Yuto Toshimori, Hideharu Matsuzaki, Ichiro Shiono
  • Patent number: 10060025
    Abstract: An Ag alloy sputtering target of the present invention includes, as a composition, 0.1 at % to 3.0 at % of Sn, 1.0 at % to 10.0 at % of Cu, and a balance of Ag and inevitable impurities. In addition, an Ag alloy film of the present invention includes, as a composition, 0.1 at % to 3.0 at % of Sn, 1.0 at % to 10.0 at % of Cu, and a balance of Ag and inevitable impurities.
    Type: Grant
    Filed: September 15, 2015
    Date of Patent: August 28, 2018
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Yuto Toshimori, Sohei Nonaka, Hideharu Matsuzaki
  • Publication number: 20170233863
    Abstract: An Ag alloy sputtering target of the present invention includes, as a composition, 0.1 at % to 3.0 at % of Sn, 1.0 at % to 10.0 at % of Cu, and a balance of Ag and inevitable impurities. In addition, an Ag alloy film of the present invention includes, as a composition, 0.1 at % to 3.0 at % of Sn, 1.0 at % to 10.0 at % of Cu, and a balance of Ag and inevitable impurities.
    Type: Application
    Filed: September 15, 2015
    Publication date: August 17, 2017
    Inventors: Yuto Toshimori, Sohei Nonaka, Hideharu Matsuzaki
  • Publication number: 20130306471
    Abstract: Provided are a sputtering target for forming a magnetic recording medium film, on which a film having a low ordering temperature can be formed and which can suppress generation of particles, and a method for producing the same. The sputtering target for forming a magnetic recording medium film consists of a sintered body having a composition represented by the general formula: {(FexPt100-x)(100-y)Agy}(100-z)Cz, wherein x, y, and z are represented by atomic percent as 30?x?80, 1?y?30, and 3?z?63. Also, the method for producing the sputtering target has a step of hot pressing a mixed powder of AgPt alloy powder, FePt alloy powder, Pt powder, and graphite powder or carbon black powder in a vacuum or an inert gas atmosphere.
    Type: Application
    Filed: January 27, 2012
    Publication date: November 21, 2013
    Inventors: Kouichi Ishiyama, Sohei Nonaka, Masanori Yosuke, Hideharu Matsuzaki