Abstract: A carbon dioxide adsorbent including silica gel and an amine compound carried by the silica gel. The silica gel has a spherical shape, a particle size ranging from 1 mm to 5 mm inclusive, an average pore diameter ranging from 10 nm to 100 nm inclusive, a pore volume ranging from 0.1 cm3/g to 1.3 cm3/g inclusive, and a waterproof property N that is defined by an expression (1) and that is not lower than 45%, N=(W/W0)×100??(1) where N is the waterproof property in percentage (%) of the silica gel, W0 is a total number of particles of the silica gel immersed in water, W is a number of particles of the silica gel not subjected to breakage out of W0.

Abstract: A contact probe can be easily mass-produced, reduce manufacturing cost, and obtain a stable contact state with an electrode such as a land of an inspection substrate. An inspection socket can be provided with the contact probe. The contact probe has a first contact terminal that contacts a solder ball of a device under test and a second contact terminal that contacts a land of a printed substrate, and a coil spring for urging contact terminals so as to separate the first and the second terminals. The first contact terminal is constituted by a first contact element formed by a rod-shaped metal member, and the second contact terminal is constituted by two second contact elements formed by a plate-shaped metal member and which clamp the first contact element in frictional contact with a part of the first contact element.

Abstract: A carbon dioxide adsorbent including silica gel and an amine compound carried by the silica gel. The silica gel has a spherical shape, a particle size ranging from 1 mm to 5 mm inclusive, an average pore diameter ranging from 10 nm to 100 nm inclusive, a pore volume ranging from 0.1 cm3/g to 1.3 cm3/g inclusive, and a waterproof property N that is defined by an expression (1) and that is not lower than 45%, N=(W/W0)×100??(1) where N is the waterproof property in percentage (%) of the silica gel, W0 is a total number of particles of the silica gel immersed in water, W is a number of particles of the silica gel not subjected to breakage out of W0.

Abstract: A method for manufacturing a carbon dioxide adsorbent includes preparing an amine aqueous solution having an amine compound concentration ranging from 5% to 70% inclusive and a temperature ranging from 10° C. to 100° C. inclusive, impregnating silica gel with the amine aqueous solution, and aeration-drying the silica gel carrying the amine compound. The silica gel has a particle size ranging from 1 mm to 5 mm inclusive, an average pore diameter ranging from 10 nm to 100 nm inclusive, and a pore volume ranging from 0.1 cm3/g to 1.3 cm3/g inclusive.

Abstract: A contact probe can be easily mass-produced, reduce manufacturing cost, and obtain a stable contact state with an electrode such as a land of an inspection substrate. An inspection socket can be provided with the contact probe. The contact probe has a first contact terminal that contacts a solder ball of a device under test and a second contact terminal that contacts a land of a printed substrate, and a coil spring for urging contact terminals so as to separate the first and the second terminals. The first contact terminal is constituted by a first contact element formed by a rod-shaped metal member, and the second contact terminal is constituted by two second contact elements formed by a plate-shaped metal member and which clamp the first contact element in frictional contact with a part of the first contact element.

Abstract: A gas engine system controller: calculates a delay calculation value of a knocking occurrence ratio; determines a primary target ignition timing; sets the primary target ignition timing as a current ignition timing if the occurrence ratio difference is positive and an ignition timing does not exceed a converted value of a first advance rate; determines whether a rapid advance condition is satisfied if the occurrence ratio difference is positive and the ignition timing difference exceeds the converted value of the first advance rate; sets a secondary target ignition timing as the current ignition timing if the rapid advance condition is not satisfied, the secondary target ignition timing obtained by adding the converted value of the first advance rate to the previous ignition timing; and determines the current ignition timing so as to achieve a second advance rate greater than the first advance rate if the rapid advance condition is satisfied.

Abstract: A semiconductor device is manufactured at an improved efficiency. The method of the invention includes a step of carrying out an electrical test by bringing an external terminal electrically coupled to a semiconductor chip mounted on a semiconductor device into contact with a tip portion of a probe pin coupled to a test circuit and thereby electrically coupling the semiconductor chip to the test circuit. The probe pin has a tip portion comprised of a base material, a nickel film formed thereon, and a conductive film formed thereon and made of silver. The conductive film is thicker than the nickel film.

Abstract: A method for manufacturing a carbon dioxide adsorbent includes preparing an amine aqueous solution having an amine compound concentration ranging from 5% to 70% inclusive and a temperature ranging from 10° C. to 100° C. inclusive, impregnating silica gel with the amine aqueous solution, and aeration-drying the silica gel carrying the amine compound. The silica gel has a particle size ranging from 1 mm to 5 mm inclusive, an average pore diameter ranging from 10 nm to 100 nm inclusive, and a pore volume ranging from 0.1 cm3/g to 1.3 cm3/g inclusive.

Abstract: A carbon dioxide recovery system includes: a desorption vessel configured to cause carbon dioxide to be desorbed from an absorbent; a carbon dioxide holder connected to desorption vessel via the desorption vessel and carbon dioxide recovery pipe; a pump configured to feed gas in the desorption vessel to the carbon dioxide holder via carbon dioxide recovery pipe; and at least one pressure switching device including at least one stage of hopper, an inlet valve configured to open and close the hopper's inlet port, an outlet valve configured to open and close the hopper's outlet port, an exhaust pipe connected to the hopper and configured to exhaust the hopper, an exhaust valve configured to open and close the exhaust pipe, an air supply pipe connected to the hopper and configured to supply carbon dioxide to the hopper, and an air supply valve configured to open and close the air supply pipe.

Abstract: A gas engine system controller: calculates a delay calculation value of a knocking occurrence ratio; determines a primary target ignition timing; sets the primary target ignition timing as a current ignition timing if the occurrence ratio difference is positive and an ignition timing does not exceed a converted value of a first advance rate; determines whether a rapid advance condition is satisfied if the occurrence ratio difference is positive and the ignition timing difference exceeds the converted value of the first advance rate; sets a secondary target ignition timing as the current ignition timing if the rapid advance condition is not satisfied, the secondary target ignition timing obtained by adding the converted value of the first advance rate to the previous ignition timing; and determines the current ignition timing so as to achieve a second advance rate greater than the first advance rate if the rapid advance condition is satisfied.

Abstract: A semiconductor device is manufactured at an improved efficiency. The method of the invention includes a step of carrying out an electrical test by bringing an external terminal electrically coupled to a semiconductor chip mounted on a semiconductor device into contact with a tip portion of a probe pin coupled to a test circuit and thereby electrically coupling the semiconductor chip to the test circuit. The probe pin has a tip portion comprised of a base material, a nickel film formed thereon, and a conductive film formed thereon and made of silver. The conductive film is thicker than the nickel film.

Abstract: The present invention is directed to improve reliability of a semiconductor device. A semiconductor device manufacturing method includes: (a) a step of attaching a BGA having a solder ball to a socket for a burn-in test; and (b) a step of performing a burn-in test of the BGA by sandwiching the solder ball by conductive contact pins in the socket. The contact pin in the socket has a first projection part which is conductive and extends along an attachment direction of the BGA and a second projection part which is conductive, provided along a direction crossing the extension direction of the first projection part, and placed so as to face the surface on the attachment side of the BGA of the solder ball. In the step (b), a burn-in test of the BGA is performed in a state where the first projection parts in the contact pins are in contact with the solder ball.

Abstract: This invention enhances reliability of an electrical test. A semiconductor device manufacturing method in which a potential (first potential) is supplied by bringing a plurality of first and second test terminals into contact with a plurality of leads, respectively in the step of supplying the potential to the leads (first leads) to carry out the electrical test. The first test terminals come into contact with the leads, individually, and the second test terminals come into contact with the leads in one batch.

Abstract: The present invention is directed to improve reliability of a semiconductor device. A semiconductor device manufacturing method includes: (a) a step of attaching a BGA having a solder ball to a socket for a burn-in test; and (b) a step of performing a burn-in test of the BGA by sandwiching the solder ball by conductive contact pins in the socket. The contact pin in the socket has a first projection part which is conductive and extends along an attachment direction of the BGA and a second projection part which is conductive, provided along a direction crossing the extension direction of the first projection part, and placed so as to face the surface on the attachment side of the BGA of the solder ball. In the step (b), a burn-in test of the BGA is performed in a state where the first projection parts in the contact pins are in contact with the solder ball.

Abstract: Improvement in yield of a semiconductor device is obtained. In addition, increase in service life of a socket terminal is obtained. A projecting portion PJ1 and a projecting portion PJ2 are provided in an end portion PU of a socket terminal STE1. Thus, it is possible to enable contact between a lead and the socket terminal STE in which a large current is caused to flow, at two points by a contact using the projecting portion PJ1 and by a contact using the projecting portion PJ2, for example. As a result, the current flowing from the socket terminal STE1 to the lead flows by being dispersed into a path flowing in the projecting portion PJ1 and a path flowing in the projecting portion PJ2. Accordingly, it is possible to suppress increase of temperature of a contact portion between the socket terminal STE1 and the lead even in a case where the large current is caused to flow between the socket terminal STE1 and the lead.

Abstract: Improvement in yield of a semiconductor device is obtained. In addition, increase in service life of a socket terminal is obtained. A projecting portion PJ1 and a projecting portion PJ2 are provided in an end portion PU of a socket terminal STE1. Thus, it is possible to enable contact between a lead and the socket terminal STE in which a large current is caused to flow, at two points by a contact using the projecting portion PJ1 and by a contact using the projecting portion PJ2, for example. As a result, the current flowing from the socket terminal STE1 to the lead flows by being dispersed into a path flowing in the projecting portion PJ1 and a path flowing in the projecting portion PJ2. Accordingly, it is possible to suppress increase of temperature of a contact portion between the socket terminal STE1 and the lead even in a case where the large current is caused to flow between the socket terminal STE1 and the lead.

Abstract: A fuel supply controlling device includes: an auxiliary chamber fuel supply valve that supplies a gaseous fuel to an auxiliary chamber; a non-return valve between the auxiliary chamber fuel supply valve and the auxiliary chamber, the non-return valve blocking a reverse flow from the auxiliary chamber; a valve state detector that detects an operating state of the non-return valve; a rotation angle detector that detects a rotation angle within an engine cycle; and a controller that determines an operation command value of the auxiliary chamber fuel supply valve. The controller measures an actual operating state of the non-return valve based on signals from the valve state detector and the rotation angle detector in association with the detected rotation angle, and corrects the operation command value of the auxiliary chamber fuel supply valve such that the measured actual operating state is brought close to a target operating state.

Abstract: Improvement in yield of a semiconductor device is obtained. In addition, increase in service life of a socket terminal is obtained. A projecting portion PJ1 and a projecting portion PJ2 are provided in an end portion PU of a socket terminal STE1. Thus, it is possible to enable contact between a lead and the socket terminal STE in which a large current is caused to flow, at two points by a contact using the projecting portion PJ1 and by a contact using the projecting portion PJ2, for example. As a result, the current flowing from the socket terminal STE1 to the lead flows by being dispersed into a path flowing in the projecting portion PJ1 and a path flowing in the projecting portion PJ2. Accordingly, it is possible to suppress increase of temperature of a contact portion between the socket terminal STE1 and the lead even in a case where the large current is caused to flow between the socket terminal STE1 and the lead.

Abstract: This invention enhances reliability of an electrical test. A semiconductor device manufacturing method in which a potential (first potential) is supplied by bringing a plurality of first and second test terminals into contact with a plurality of leads, respectively in the step of supplying the potential to the leads (first leads) to carry out the electrical test. The first test terminals come into contact with the leads, individually, and the second test terminals come into contact with the leads in one batch.

Abstract: The reliability of multipoint contact by a contact pin with an external terminal is improved while achieving an improvement in easiness of manufacture of the contact pin. The contact pin includes first and second contact pins. Further, the first contact pin has a support portion extending in a y direction and a tip portion connected to the support portion. The second contact pin also has a support portion extending in the y direction and a tip portion connected to the support portion. Here, the support portion of the first contact pin and the support portion of the second contact pin are arranged side by side along an x direction in a horizontal plane (xy plane). Further, the tip portion of the second contact pin is shifted from the tip portion of the first contact pin along the y direction in the horizontal plane, crossing (perpendicular to) the x direction.