Abstract: A vibration damping device for a structure 1 includes a circular tubular member 3 having a circular tubular inner peripheral surface 2; a columnar elongated member 6 which is disposed in the circular tubular member 3 relatively movably in a direction X with respect to the circular tubular member 3 and having a circular tubular outer peripheral surface 5; and a circular tubular elastic member 10 which has a circular tubular member outer peripheral surface 8 fixed to the inner peripheral surface 2 of the circular tubular member 3 and a circular tubular member inner peripheral surface 9 fixed to the circular tubular outer peripheral surface 5 of the elongated member 6, and which is disposed between the inner peripheral surface 2 of the circular tubular member 3 and the outer peripheral surface 5 of the elongated member 6.

Abstract: A glass ceramic composition of the present invention includes a main component composed of a first glass, a second glass, Al2O3, and SiO2. The first glass is SiO2—K2O—B2O3 based glass. The second glass is MO—SiO2—Al2O3—B2O3 based glass (“M” is an alkaline-earth metal) and/or CaO—SiO2—Al2O3—ZnO—ZrO2—B2O3 based glass. In case that the total amount of the main component is 100 wt %, the main component contains the second glass of 12 to 30 wt %, the first and second glass of 40 to 56 wt % in total, and further Al2O3 of 7 to 18 wt %.

Abstract: There is provided a heat treatment apparatus, including: a processing container configured to perform a heat treatment on substrates accommodated in the processing container; a heating unit configured to cover an outer circumference of the processing container with a predetermined space defined the heating unit and the processing container; a discharge pipe installed outside of the processing container and within the predetermined space, and configured to communicate with an interior of the processing container to discharge an exhaust gas from the interior of the processing container; and a heat insulating member configured to cover a circumference of the discharge pipe.

Abstract: Composite electronic including coil, capacitor and intermediate parts, wherein coil part includes coil-conductor and magnetic-layer, capacitor part includes internal electrodes and dielectric-layer, which contains SrO—TiO2 or ZnO—TiO2 based oxide, intermediate part between coil and capacitor parts, intermediate part includes intermediate material layer, which contains ZnO, TiO2 and boron, ZnO contained in intermediate material layer 50-85 parts by mole and TiO2 contained the intermediate material layer 15-50 parts by mole when total content of ZnO and TiO2 in intermediate material layer is 100 parts by mole, content boron in intermediate material layer is 0.1-5.0 parts by weight of B2O3 when total of ZnO and TiO2 in intermediate material layer set to 100 parts by weight, part of ZnO and TiO2 intermediate material layer constitute ZnO—TiO2 compound, which in intermediate material layer is 50 wt % or more when total weight of ZnO and TiO2 in intermediate material layer is set to 100 wt %.

Abstract: A heat treatment apparatus performs a heat treatment on a plurality of target objects held by a holding unit while allowing an inert gas to flow upwardly in a vertical processing container with at least one heating unit provided in the vicinity of the processing container. The heat treatment apparatus includes: a main temperature control unit configured to control the heating unit; an inert gas passage through which the inert gas flows into the processing container; an inert gas heating unit installed in the inert gas passage and configured to heat the inert gas; a first temperature measuring unit installed in the inert gas heating unit; and a temperature controller configured to control the inert gas heating unit based on temperatures measured by the first temperature measuring unit.

Abstract: A glass ceramic composition of the present invention includes a main component composed of a first glass, a second glass, Al2O3, and SiO2. The first glass is SiO2—K2O—B2O3 based glass. The second glass is MO—SiO2—Al2O3—B2O3 based glass (“M” is an alkaline-earth metal) and/or CaO—SiO2—Al2O3—ZnO—ZrO2—B2O3 based glass. In case that the total amount of the main component is 100 wt %, the main component contains the second glass of 12 to 30 wt %, the first and second glass of 40 to 56 wt % in total, and further Al2O3 of 7 to 18 wt %.

Abstract: There is provided a heat treatment apparatus, including: a processing container configured to perform a heat treatment on substrates accommodated in the processing container; a heating unit configured to cover an outer circumference of the processing container with a predetermined space defined the heating unit and the processing container; a discharge pipe installed outside of the processing container and within the predetermined space, and configured to communicate with an interior of the processing container to discharge an exhaust gas from the interior of the processing container; and a heat insulating member configured to cover a circumference of the discharge pipe.

Abstract: In order to provide a dielectric ceramic composition capable of sintering at a low temperature, implementing a low relative dielectric constant, providing other excellent properties (such as a relative density and an insulation resistance), performing co-firing of different materials, and suppressing dispersion of Ag in the sintered body when the internal electrode is formed, the dielectric ceramic composition includes a main ingredient containing SiO2—K2O—B2O3-based glass of 40 to 65 weight %, quartz of 35 to 50 weight %, and amorphous silica of remaining weight %; and a subsidiary ingredient containing alumina of 1.5 to 4 weight %, K2O-MO—SiO2—B2O3-based glass (where “MO” denotes at least any one selected from a group consisting of CaO and SrO) of 5 to 20 weight % relative to the main ingredient of 100 weight %.

Abstract: A heat treatment apparatus performs a heat treatment on a plurality of target objects held by a holding unit while allowing an inert gas to flow upwardly in a vertical processing container with at least one heating unit provided in the vicinity of the processing container. The heat treatment apparatus includes: a main temperature control unit configured to control the heating unit; an inert gas passage through which the inert gas flows into the processing container; an inert gas heating unit installed in the inert gas passage and configured to heat the inert gas; a first temperature measuring unit installed in the inert gas heating unit; and a temperature controller configured to control the inert gas heating unit based on temperatures measured by the first temperature measuring unit.

Abstract: A semiconductor device fabrication method includes the steps of (a) forming a dielectric film on a semiconductor substrate; (b) etching the dielectric film by a dry process; and (c) supplying thermally decomposed atomic hydrogen onto the semiconductor substrate under a prescribed temperature condition, to remove a damaged layer produced in the semiconductor substrate due to the dry process.

Abstract: An inner hole to which a driving shaft is inserted is formed in a cam piece of a camshaft, and a plurality of grooves extending in the insertion direction of the driving shaft are formed in the inner hole. The driving shaft is inserted into the inner hole with the cam piece heated to expand the diameter of the inner hole. By reducing again the diameter of the inner hole by cooling it in this state, an outer circumferential surface of the driving shaft is pressed and raised by the inner hole and enters the groove, by which the cam piece is firmly fixed onto the driving shaft.

Abstract: In order to provide a dielectric ceramic composition capable of sintering at a low temperature, implementing a low relative dielectric constant, providing other excellent properties (such as a relative density and an insulation resistance), performing co-firing of different materials, and suppressing dispersion of Ag in the sintered body when the internal electrode is formed, the dielectric ceramic composition includes a main ingredient containing SiO2—K2O—B2O3-based glass of 40 to 65 weight %, quartz of 35 to 50 weight %, and amorphous silica of remaining weight %; and a subsidiary ingredient containing alumina of 1.5 to 4 weight %, K2O-MO—SiO2—B2O3-based glass (where “MO” denotes at least any one selected from a group consisting of CaO and SrO) of 5 to 20 weight % relative to the main ingredient of 100 weight %.

Abstract: According to one aspect of the present disclosure, provided is a heat treatment apparatus configured to heat treat a plurality of objects to be treated which are held and supported by a holding and supporting unit while an inert gas is allowed to flow in a vertical type processing chamber from a bottom to a top thereof, wherein the processing chamber has a heating unit installed therearound. The heat treatment apparatus includes a gas supply system configured to supply the inert gas, wherein the gas supply system includes a gas supply header portion located in a lower end of the processing chamber to allow the inert gas to flow along a circumferential direction of the lower end; and a gas introduction portion in communication with the gas supply header portion to introduce the inert gas into the processing chamber.

Abstract: A method of manufacturing a semiconductor device forms the semiconductor device in a device region of a semiconductor substrate simultaneously with forming a monitor semiconductor device that includes a gate electrode made of silicon containing material arranged on a gate insulating film in a monitor region of the semiconductor substrate, a source electrode and a drain electrode formed on the semiconductor substrate on corresponding sides of the gate electrode. The gate electrode is removed without removing a gate insulating film by applying pyrolysis hydrogen generated by pyrolysis on the monitor semiconductor device in the monitor region, and the gate insulating film is removed by a wet process. Impurities distribution of a silicon active region appearing after the gate electrode is removed is measured and fed back to a semiconductor manufacturing process.

Abstract: A method of manufacturing a semiconductor device forms the semiconductor device in a device region of a semiconductor substrate simultaneously with forming a monitor semiconductor device that includes a gate electrode made of silicon containing material arranged on a gate insulating film in a monitor region of the semiconductor substrate, a source electrode and a drain electrode formed on the semiconductor substrate on corresponding sides of the gate electrode. The gate electrode is removed without removing a gate insulating film by applying pyrolysis hydrogen generated by pyrolysis on the monitor semiconductor device in the monitor region, and the gate insulating film is removed by a wet process. Impurities distribution of a silicon active region appearing after the gate electrode is removed is measured and fed back to a semiconductor manufacturing process.

Abstract: A method of A production method including interdiffusion of a Ni component in a magnetic layer and a Zn component in a nonmagnetic sheet to form an interdiffusion layer in a region of the nonmagnetic sheet inside a conductive pattern. This method allows the interdiffusion layer to be formed without need for complicated processing of the nonmagnetic sheet. Furthermore, there is no boundary region between the magnetic layer and the nonmagnetic sheet around it. The nonmagnetic layer is located between turns of a coiled conductor to suppress degradation of dc bias characteristics and a magnetic body penetrates in a region inside the coiled conductor to suppress reduction in inductance due to provision of the nonmagnetic layer between turns of the coiled conductor.

Abstract: A semiconductor device fabrication method includes the steps of (a) forming a dielectric film on a semiconductor substrate; (b) etching the dielectric film by a dry process; and (c) supplying thermally decomposed atomic hydrogen onto the semiconductor substrate under a prescribed temperature condition, to remove a damaged layer produced in the semiconductor substrate due to the dry process.

Abstract: A method of manufacturing a semiconductor device forms the semiconductor device in a device region of a semiconductor substrate simultaneously with forming a monitor semiconductor device that includes a gate electrode made of silicon containing material arranged on a gate insulating film in a monitor region of the semiconductor substrate, a source electrode and a drain electrode formed on the semiconductor substrate on corresponding sides of the gate electrode. The gate electrode is removed without removing a gate insulating film by applying pyrolysis hydrogen generated by pyrolysis on the monitor semiconductor device in the monitor region, and the gate insulating film is removed by a wet process. Impurities distribution of a silicon active region appearing after the gate electrode is removed is measured and fed back to a semiconductor manufacturing process.

Abstract: A semiconductor device fabrication method includes the steps of (a) forming a dielectric film on a semiconductor substrate; (b) etching the dielectric film by a dry process; and (c) supplying thermally decomposed atomic hydrogen onto the semiconductor substrate under a prescribed temperature condition, to remove a damaged layer produced in the semiconductor substrate due to the dry process.

Abstract: A method of manufacturing a semiconductor device is provided which comprises: forming a first gate insulating film and a second gate insulating film in an active region of a semiconductor substrate; introducing an impurity of a first conductivity type into a first site where a first body region is to be formed, the first site being disposed under the first gate insulating film in the active region; forming a gate electrode on each of the first gate insulating film and the second gate insulating film; and introducing an impurity of the first conductivity type into the first site and a second site where a second body region is to be formed, the second site being disposed under the second gate insulating film in the active region, to form the first body region and the second body region, respectively.