Abstract: By a non-selective epitaxial growth method, an SiGe film is grown on the whole surface of a silicon oxide film so as to cover an inner wall of a base opening. Here, such film forming conditions are selected that, inside the base opening, a bottom portion is formed of single crystal, other portions such as a sidewall portion are formed of polycrystalline, and a film thickness of the sidewall portion is less than or equal to 1.5 times the film thickness of the bottom portion. In this nonselective epitaxial growth, monosilane, hydrogen, diborane, and germane are used as source gases. Then, flow rates of monosilane and hydrogen are set to 20 sccm and 20 slm respectively. Also, a growth temperature is set to 650° C., a flow rate of diborane is set to 75 sccm, and a flow rate of germane is set to 35 sccm.

Abstract: When a silicon-germanium mixed crystal layer is grown on a substrate by introducing a silicon source gas, a germanium source gas, a boron source gas, and a carbon source gas into a reaction chamber, the flow rate of the carbon source gas is set at 5 sccm or higher and the supply concentration of the carbon source gas is set as low as approximately 1.0% under the condition that the silicon-germanium mixed crystal layer is doped with carbon with a concentration of approximately 0.5%; resulting in, carbon with a concentration required to inhibit the diffusion of boron is doped into the layer and the concentration of carbon becomes equal to or higher than the concentration of boron in a region at any given depth.

Abstract: By a non-selective epitaxial growth method, an SiGe film is grown on the whole surface of a silicon oxide film so as to cover an inner wall of a base opening. Here, such film forming conditions are selected that, inside the base opening, a bottom portion is formed of single crystal, other portions such as a sidewall portion are formed of polycrystalline, and a film thickness of the sidewall portion is less than or equal to 1.5 times the film thickness of the bottom portion. In this nonselective epitaxial growth, monosilane, hydrogen, diborane, and germane are used as source gases. Then, flow rates of monosilane and hydrogen are set to 20 sccm and 20 slm respectively. Also, a growth temperature is set to 650° C., a flow rate of diborane is set to 75 sccm, and a flow rate of germane is set to 35 sccm.

Abstract: The present invention realizes a heterobipolar transistor using a SiGeC base layer in order to improve its electric characteristics. Specifically, the distribution of carbon and boron within the base layer is controlled so that the concentration of boron is higher than the concentration of carbon on the side bordering on the emitter layer, and upon the formation of the emitter layer, both boron and carbon are dispersed into a portion of the emitter layer that comes into contact with the base layer.

Abstract: When a silicon-germanium mixed crystal layer is grown on a substrate by introducing a silicon source gas, a germanium source gas, a boron source gas, and a carbon source gas into a reaction chamber, the flow rate of the carbon source gas is set at 5 sccm or higher and the supply concentration of the carbon source gas is set as low as approximately 1.0% under the condition that the silicon-germanium mixed crystal layer is doped with carbon with a concentration of approximately 0.5%. As a result, carbon with a concentration required to inhibit the diffusion of boron is doped into the layer and the concentration of carbon becomes equal to or higher than the concentration of boron in a region at any given depth, so that the occurrence of a difference in doping depth between the dopings of carbon and boron into the silicon-germanium mixed crystal layer is prevented.

Abstract: The present invention is to form a new desirable silicon nitride film of lower dielectric constant even by using common gases. More preferably, it should be well compatible with copper wiring if it is applied as an interlayer insulating film. A silicon nitride film comprising a ratio of N:Si of from 1.0-1.1: and a ratio of O:Si of from 0.1-0.15:1, and being formed through catalytic CVD method by using monosilane and ammonia, and thereby having a relative dielectric constant of less than 6. Also, a semiconductor device is provided employing the above silicon nitride film as an interlayer insulating film, favorably, between copper layers.

Abstract: A communication parameter delivery server 50b has communication parameters necessary for making each of information terminals 13, 23 and 33 have a dial-up IP connection service. The server 50b delivers the communication parameters via each of networks 12, 22 and 33 responsively to a request from each of the information terminals 13, 23 and 33. The delivered communication terminals are set to Internet connection software installed in each of the information terminal 13, 23 and 33.

Abstract: The present invention is to form a new desirable silicon nitride film of lower dielectric constant even by using common gases. More preferably, it should be well compatible with copper wiring if it is applied as an interlayer insulating film. A silicon nitride film comprising a ratio of N: Si of from 1.0-1.1: and a ratio of O:Si of from 0.1-0.15:1, and being formed through catalytic CVD method by using monosilane and ammonia, and thereby having a relative dielectric constant of less than 6. Also, a semiconductor device is provided employing the above silicon nitride film as an interlayer insulating film, favorably, between copper layers.

Abstract: In a cordless telephone set, a base unit which itself has no loudspeaker function is made to provide a loudspeaker function at low cost. The base unit 2 has a transmitting circuit 22 for transmitting an aural signal and data to the handset 1 and a receiving circuit 23 for receiving and extracting the aural signal and data transmitted from the handset 1. A line interface circuit 25 coupled to a telephone line 3, a loudspeaker 44, and a selector circuit 28 for switching connection of the aural signal line between the transmitting circuit 22, the receiving circuit 23, the interface circuit 25, and the loudspeaker 44 are provided. In normal use, the transmitting circuit 22 and the receiving circuit 23 of the base unit 2 are connected with the line interface circuit 25 via the selector circuit 28. When predetermined push buttons 17 on the handset 1 are operated, the base unit 2 controls the selector circuit 28 so that the telephone line 3 is connected to the loudspeaker 44 via the selector circuit 28.

Abstract: A steering column shaft locking device is disclosed in which a lever is rotatably mounted in a key cylinder when a key is inserted into the key cylinder, producing reaction force on a front wall of a housing, thereby causing the key cylinder to move backward against resilient force of a spring in order to certainly operate a key detecting switch provided in an ignition switch device. A guard plate is provided between the key cylinder and the front end of the housing so as to rotate it together with the key cylinder and guard plate when the key is rotated. Forward movement of the key cylinder is controlled by a retainer placed at the proximity thereof and a detent placed therein. The spring urges the key cylinder and the retainer in the forward direction and the detent radially inwardly. The guard plate serves to prevent abrasion of the lever and unauthorized insertion of tools into the device.

Abstract: Disclosed herein is a cylinder lock which is proof against lock pickers. The cylinder lock comprises a case having a cylindrical bore formed therein and an axially extending lock groove exposed to the cylindrical bore; a rotor rotatably disposed in the cylindrical bore; a plurality of tumblers slidably received in slits formed in the rotor, each tumbler having a head which is projectable into the lock groove when the rotor assumes a given angular position relative to the case; springs for biasing the tumblers radially outward from the slits of the rotor; and a structure for making the distances by which the heads of the tumblers are projected into the lock groove of the case different from one another.

Abstract: An automotive keyless steering shaft lock arrangement includes a stationary housing; an electric motor mounted in the housing; a gearing unit of the profile shifted type operatively connected with the motor; a rotator operatively connected with output shaft of the gearing unit; and a shaft-locking and unlocking bar cooperatable with the steering shaft in case of the required locking stage.The steering shaft is provided with one or more magnets embedded in or mounted on the steering shaft. On the other hand, the stationary housing is provided with one or more magnetically responding switches which are connected to an electronic control circuit adapted for control of the locking and unlocking movement of the bar.

Abstract: The invention proposes an improved keyless steering shaft lock arrangement which comprises a gearing unit operatively connected with an electric motor; a rotator operatively connected with output shaft means of the gearing unit; and a rod movable between a locking and an unlocking position to engage with and disengage from a reception recess on a steering shaft depending upon rotational position of said rotator. Operation of the arrangement is controlled by a combined electronic and electric control circuit. The control circuit includes several safety means adapted for cooperation with the conventional engine ignition circuit, engine-running sensor, and vehicle-running sensor, for assuring proper and safe cooperation among these constituents.