Patents by Inventor Hideki Goto

Hideki Goto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050121310
    Abstract: A selective sputtering method and resulting substrate are provided. This may involve obtaining a substrate and identifying a die placement area and a keep out area of the substrate. A protective area may be formed over the substrate between the die placement area and the keep out area. This may be done using a selective sputtering process. Underfill material may be provided over at least the die placement area of the substrate without the underfill material flowing to the keep out area based on the surface roughness of the keep out area.
    Type: Application
    Filed: December 3, 2003
    Publication date: June 9, 2005
    Inventors: Atsushi Yamada, Hideki Goto, Dennis Chandran, Leng See, Heng Lee
  • Publication number: 20050008414
    Abstract: A heating device for heating a recording sheet includes: a first heater disposed within a heating roller and having a heat distribution characteristic to form a low temperature region in an axially central portion of the heating roller and a high temperature region in each of axially opposite end portions of the heating roller; and a second heater disposed within the heating roller and having a heat distribution characteristic to form a high temperature region in the axially central portion of the heating roller, a low temperature region in each of the opposite end portions of the heating roller, and a second-level high temperature region in each of axially opposite end portions of the high temperature region, the second-level high temperature region being lower in temperature than the high temperature region.
    Type: Application
    Filed: July 8, 2004
    Publication date: January 13, 2005
    Inventors: Kohji Aoki, Kohichi Moriyama, Motoaki Okitsu, Hiroaki Hori, Tatsuya Shinkawa, Hideki Goto
  • Patent number: 6804469
    Abstract: A supervisory system and supervisory method of an optical amplifier repeater are proposed that can implement operation supervision taking account of the characteristics of individual supervisory targets of the optical amplifier repeater, thereby achieving higher reliability.
    Type: Grant
    Filed: June 27, 2001
    Date of Patent: October 12, 2004
    Assignees: Mitsubishi Denki Kabushiki Kaisha, KDDI Corporation, KDD Submarine Cable Systems Inc.
    Inventors: Yasunori Kasahara, Hideki Goto, Takashi Mizuochi, Kenkichi Shimomura, Yukio Horiuchi, Masatoshi Suzuki, Daishi Ishii, Toshio Kawazawa
  • Publication number: 20040041162
    Abstract: A semiconductor light-emitting device comprising a substrate having a surface having an off-angle to a crystallographic plane of low-degree surface orientation, the substrate having thereon: compound semiconductor layers including an active layer; a selective growth protective film formed on the compound semiconductor layers and having an opening at the region corresponding to a stripe region to which a current is injected; and a ridge-shaped compound semiconductor layer fomred to cover the opening. This semiconductor light-emitting device with stable laser property can be manufactured in a simplified way.
    Type: Application
    Filed: September 2, 2003
    Publication date: March 4, 2004
    Applicant: Mitsubishi Chemical Corporation
    Inventors: Kenji Shimoyama, Satoru Nagao, Katsushi Fujii, Hideki Goto
  • Patent number: 6639926
    Abstract: A semiconductor light-emitting device comprising a substrate having a surface having an off-angle to a crystallographic plane of low-degree surface orientation, the substrate having thereon: compound semiconductor layers including an active layer; a selective growth protective film formed on the compound semiconductor layers and having an opening at the region corresponding to a stripe region to which a current is injected; and a ridge-shaped compound semiconductor layer formed to cover the opening. This semiconductor light-emitting device with stable laser property can be manufactured in a simplified way.
    Type: Grant
    Filed: March 24, 1999
    Date of Patent: October 28, 2003
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Kenji Shimoyama, Satoru Nagao, Katsushi Fujii, Hideki Goto
  • Publication number: 20030144144
    Abstract: A catalyst for purifying NOx is provided which efficiently decomposes and purify the NOx in an exhaust gas in an oxygen-excess atmosphere, excels in resistance to heat and in durability in a high temperature range under a high-temperature oxidizing atmosphere and in the presence of moisture and SOx, and manifests the catalytic activity over a wide range of temperature. It is a catalyst for purifying nitrogen oxides formed by coating (A) a catalytically active component comprising (A-a) iridium and (A-b) at least one element selected from the group consisting of the elements of Group IIIB and Group IVB in the Periodic Table of the Elements with (B) a refractory inorganic compound.
    Type: Application
    Filed: December 9, 2002
    Publication date: July 31, 2003
    Inventors: Hideki Goto, Shigeyoshi Taniguchi, Makoto Horiuchi
  • Patent number: 6592802
    Abstract: The present invention provides a process for continuously producing a polymer sheet having an excellent surface smoothness, an apparatus for producing such a polymer sheet, and an optical polymer sheet produced by such a process. The process for producing a polymer sheet comprises coating or laminating, on a polymer base sheet, an ultraviolet-curing resin composition, adhering the coated or laminated polymer base sheet to a member having a smooth surface whose maximum surface roughness (Rmax) satisfies Rmax≦0.1 &mgr;m, in a state that the ultraviolet-curing resin composition is soft, and applying an ultraviolet light to transfer smoothness of the smooth surface of the member onto the polymer base sheet.
    Type: Grant
    Filed: March 26, 2002
    Date of Patent: July 15, 2003
    Assignee: Sumitomo Bakelite Company Limited
    Inventors: Hideki Goto, Junji Tanaka, Toshimasa Eguchi, Tsuyoshi Takenaka, Shinji Ohno
  • Publication number: 20030011856
    Abstract: An optical repeating system includes an optical transmitter and a plurality of optical amplifying repeaters. The optical transmitter specifies a part or all of the optical amplifying repeaters, and transmits a supervisory command to the specified optical amplifying repeaters as a first sub-signal via an uplink or downlink optical transmission line. The supervisory command is a command to supervise internal circuits of the optical amplifying repeaters. Receiving the supervisory command addressed thereto via the uplink or downlink optical transmission line, the optical amplifying repeaters each transmit a supervisory signal indicating a supervisory result corresponding to the supervisory command to optical receivers via the uplink and downlink optical transmission lines as a second sub-signal. The optical system can reduce the time take to acquire the supervisory information about the plurality of the optical amplifying repeaters.
    Type: Application
    Filed: July 10, 2002
    Publication date: January 16, 2003
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventors: Yasunori Kasahara, Hideki Goto, Takashi Mizuochi, Kenkichi Shimomura, Yukio Horiuchi, Masatoshi Suzuki, Daishi Ishii, Toshio Kawazawa
  • Publication number: 20030011879
    Abstract: An optical repeating system includes an optical transmitter and a plurality of optical amplifying repeaters. The optical transmitter specifies one of the optical amplifying repeaters, and transmits a supervisory command and a control command to the specified optical amplifying repeater as a first sub-signal. The supervisory command is a command to supervise internal circuits of the optical amplifying repeater, and the control command is a command to control amplification factors of optical amplifiers of the optical amplifying repeater. Receiving the supervisory command via the uplink or downlink optical transmission line, the optical amplifying repeater transmit a supervisory signal indicating a supervisory result corresponding to the supervisory command to optical receivers via the uplink and downlink optical transmission lines as a second sub-signal.
    Type: Application
    Filed: July 11, 2002
    Publication date: January 16, 2003
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventors: Yasunori Kasahara, Hideki Goto, Takashi Mizuochi, Kenkichi Shimomura, Yukio Horiuchi, Masatoshi Suzuki, Toshio Kawazawa, Daishi Ishii
  • Publication number: 20030011857
    Abstract: An optical repeating system includes an optical transmitter and an optical amplifying repeater. The optical transmitter transmits a supervisory command and a control command to the optical amplifying repeater as a first sub-signal. The supervisory command is a command to supervise internal circuits of the optical amplifying repeater, and the control command is a command to control the optical amplifying repeater. The optical amplifying repeater includes multiple sub-modules each for amplifying and repeating main signals on multiple sets of optical transmission lines. When receiving the supervisory command via the optical transmission line, each sub-module transmits a supervisory signal indicating the supervisory result associated with the supervisory command to an optical receiver as a second sub-signal.
    Type: Application
    Filed: July 11, 2002
    Publication date: January 16, 2003
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventors: Yasunori Kasahara, Hideki Goto, Takashi Mizuochi, Kenkichi Shimomura, Masatoshi Suzuki, Yukio Horiuchi, Daishi Ishii, Toshio Kawazawa
  • Patent number: 6444910
    Abstract: There is provided a structure for connecting a flat cable to bus bars. To this end, conductor strips are first exposed from the end portion of the flat cable. The inventive structure includes bus bars and conductor strips adhered to the bus bars, thereby forming a joint section including strip layers and strip gaps. The structure includes a first and a second insulator resin sheet respectively placed on a first and a second face of the joint section. At least the first insulator resin sheet is then configured such that it penetrates into the strip gaps and adheres to the second insulator resin sheet, so as to form insulating grooves. In this manner, narrow conductor strips of a flat cable and corresponding bus bars can be connected with sufficient mechanical strength, and their insulation is improved.
    Type: Grant
    Filed: June 14, 2000
    Date of Patent: September 3, 2002
    Assignee: Sumitomo Wiring Systems, Ltd.
    Inventor: Hideki Goto
  • Publication number: 20020021473
    Abstract: A supervisory system and supervisory method of an optical amplifier repeater are proposed that can implement operation supervision taking account of the characteristics of individual supervisory targets of the optical amplifier repeater, thereby achieving higher reliability.
    Type: Application
    Filed: June 27, 2001
    Publication date: February 21, 2002
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventors: Yasunori Kasahara, Hideki Goto, Takashi Mizuochi, Kenkichi Shimomura, Yukio Horiuchi, Masatoshi Suzuki, Daishi Ishii, Toshio Kawazawa
  • Patent number: 6210787
    Abstract: A transparent electromagnetic wave shield comprising a transparent polymer film and a conductive layer of a linear pattern shape formed on at least one side of said film, wherein the line intervals in said linear pattern are random between 20 &mgr;m and 1 mm.
    Type: Grant
    Filed: June 7, 1999
    Date of Patent: April 3, 2001
    Assignee: Sumitomo Bakelite Company Limited
    Inventors: Hideki Goto, Junji Tanaka
  • Patent number: 6185401
    Abstract: A toner supply container for supplying toner into a main assembly of an electrophotographic image forming apparatus includes a toner accommodating portion for accommodating toner to be supplied into a main assembly of the electrophotographic image forming apparatus; a toner discharging opening for discharging the toner accommodated in the toner accommodating portion, the toner discharging opening being provided in the toner accommodating portion; a sealing member for openably sealing the toner discharging opening; an openable member for openably sealing the toner discharging opening; a rotatable member which is rotatable relative to the toner accommodating portion; a rotating force receiving portion for receiving rotating force produced by rotation of the rotatable member through a rotating force transmission member provided in the main assembly of the electrophotographic image forming apparatus to unseal the toner discharging opening by the rotation of the rotatable member when the toner supply container is
    Type: Grant
    Filed: September 29, 1998
    Date of Patent: February 6, 2001
    Assignee: Canon Kabushiki Kaisha
    Inventors: Akihito Kanamori, Kazuyuki Miyano, Hideki Goto, Tatsuya Goto
  • Patent number: 6172998
    Abstract: The present invention relates to a semiconductor laser diode comprising a GaAs substrate and at least a first conduction-type clad layer, an active layer containing In, Ga and As as component elements, a second conduction-type first clad layer, a current block layer and a second conduction-type second clad layer which are deposited on the substrate in order, wherein a current injection region is formed by said current block layer and said second conduction-type second clad layer, the effective refractive index step &Dgr;neff in the horizontal direction is from 2.5×10−3 to 5.0×10−3 at the emission wavelength, and the width W of the current injection region is from 1.5 to 2.5 &mgr;m. The semiconductor laser diode of the present invention is suited for uses where high output and long life-time are required, such as excitation light source for optical fiber amplifiers.
    Type: Grant
    Filed: November 17, 1997
    Date of Patent: January 9, 2001
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Hideyoshi Horie, Toshinari Fujimori, Satoru Nagao, Hideki Goto
  • Patent number: 6023483
    Abstract: A semiconductor light-emitting device comprising a substrate having thereon: a first conductive type first clad layer; an active layer; a second conductive type first clad layer having a stripe region to which a current is injected and the remaining region; a ridge portion comprising: a ridge-shape second conductive type second clad layer formed on the stripe region of the second conductive type first clad layer; a second conductive type contact layer formed on the ridge-shape second conductive type second clad layer; and a protective film formed on the second conductive type first clad layer to cover the remaining region thereof, wherein a part of the second conductive type second clad layer is formed on said protective film, or wherein said contact layer is formed on a substantially whole surface area of said second conductive type second clad layer, or wherein said ridge portion has no protective layer on the side surface thereof.
    Type: Grant
    Filed: March 26, 1998
    Date of Patent: February 8, 2000
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Kenji Shimoyama, Katsushi Fujii, Satoru Nagao, Hideki Goto
  • Patent number: 5920767
    Abstract: The disclosure describes a method of forming a groove in a structure of a semiconductor laser diode, which comprises a crystal growth procedure of epitaxial growth of a core layer comprising MP, wherein M represents one or more of elements belonging to group IIIb of periodic table and an upper layer comprising MAs, wherein M represents one or more of elements belonging to group IIIb of periodic table, successively on (100) surface of MAs crystals in a lower layer comprising MAs; a photolithography and wet etching procedure of, after forming an etching mask on the upper layer, forming an etching window to the etching mask; a first etching procedure of selective etching the upper layer; and a second etching procedure of selective etching other faces except for the face in which (111) face of MP crystals in the core layer is exposed.
    Type: Grant
    Filed: July 22, 1996
    Date of Patent: July 6, 1999
    Assignee: Mitsubishi Chemical Company
    Inventors: Hideyoshi Horie, Toshinari Fujimori, Satoru Nagao, Nobuyuki Hosoi, Hideki Goto
  • Patent number: 5868834
    Abstract: The disclosure describes a method of manufacturing a Group II-VI compound semiconductor thin film by a vapor-phase epitaxy using an organic metal compound of Group II element and a hydride or an organic metal compound of Group VI element as the raw material, which comprises repeating alternate introduction of an organic metal compound of Group II element and a halide gas, a halogen gas or a mixture thereof; or adding a halide gas, a halogen gas or a mixture thereof to a gas for vapor-phase epitaxy.
    Type: Grant
    Filed: June 16, 1997
    Date of Patent: February 9, 1999
    Assignee: Mitsubishi Kasei Corporation
    Inventors: Kenji Shimoyama, Toshinari Fujimori, Hideki Goto
  • Patent number: 5699180
    Abstract: A laser beam is projected from a laser oscillator 1 and converged by a condenser lens 2. The laser beam converged by the condenser lens 2 is reflected in any arbitrary direction by a scanning mirror 4 which is rotated by scanning means 3. The laser beam is linearly moved. The laser beam is reflected by a curved surface reflecting mirror 5 which is formed in a spherical surface in the primary scanning direction of the laser beam and an ellipsoid in the secondary scanning direction so that the scanned surface is scanned at a substantially predetermined speed.
    Type: Grant
    Filed: August 30, 1995
    Date of Patent: December 16, 1997
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Toshio Urakawa, Hideki Goto, Kounosuke Mino
  • Patent number: 5644165
    Abstract: A p-type ohmic metal electrode for use with a group II-VI semiconductor device. The p-type ohmic metal electrode is made of a group II-IV p-type semiconductor layer having a group II element other than zinc dispersed in that layer disposed on the group II-IV semiconductor device, and a metal electrode layer disposed on the group II-IV semiconductor layer including the group II element other than zinc. Also disclosed is a group II-IV semiconductor device including a p-type group II-IV semiconductor containing zinc and selenium and the above ohmic metal electrode disposed on the group II-IV semiconductor device. Additionally, a group II-IV semiconductor device including a p-type group II-IV semiconductor containing zinc and selenium, a layer of a group II element other than zinc disposed on the group II-IV semiconductor device, and a metal electrode layer disposed on the layer of the group II element other than zinc is disclosed.
    Type: Grant
    Filed: February 27, 1996
    Date of Patent: July 1, 1997
    Assignee: Mitsubishi Kasei Corporation
    Inventor: Hideki Goto