Patents by Inventor Hidenao Kuribayashi
Hidenao Kuribayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20230173620Abstract: A sheet-shaped solder that is not susceptible to electromigration, and a solder joint part and semiconductor device using the same are provided. A pressed sheet-shaped solder containing a solder alloy containing Sn as a primary component, an additional element, and an incidental impurity is provided. A pressed surface of the sheet-shaped solder is a surface perpendicular to a main surface of the sheet-shaped solder, and c-axes of Sn crystals are aligned in a direction perpendicular to a thickness direction of the sheet-shaped solder. Moreover, a solder joint part including a semiconductor element, and an electrically conductive connection member, and a solder joining layer being the above sheet-shaped solder melted between the semiconductor element and the electrically conductive connection member is provided.Type: ApplicationFiled: October 26, 2022Publication date: June 8, 2023Applicant: FUJI ELECTRIC CO., LTD.Inventors: Katsunori SUZUKI, Hidenao KURIBAYASHI
-
Patent number: 11469297Abstract: A semiconductor device including: a semiconductor substrate having a first and a second side, and including a donor layer with a doping concentration profile in a depth direction from the first to the second side. The donor layer includes: a first peak, situated at a first distance from the first side of said substrate; a first region adjacent to the first peak and extending in the depth direction from the first peak toward the first side, a second peak in said doping concentration profile, situated at a second distance from the first side of said substrate. Said second distance is less than said first distance and greater than zero; and a second region adjacent to the second peak and extending in the depth direction from the second peak toward the first side of the substrate, which has a doping concentration which is substantially uniform.Type: GrantFiled: January 19, 2021Date of Patent: October 11, 2022Assignee: FUJI ELECTRIC CO., LTD.Inventors: Takashi Yoshimura, Masayuki Miyazaki, Hiroshi Takishita, Hidenao Kuribayashi
-
Publication number: 20210143252Abstract: Hydrogen atoms and crystal defects are introduced into an n? semiconductor substrate by proton implantation. The crystal defects are generated in the n? semiconductor substrate by electron beam irradiation before or after the proton implantation. Then, a heat treatment for generating donors is performed. The amount of crystal defects is appropriately controlled during the heat treatment for generating donors to increase a donor generation rate. In addition, when the heat treatment for generating donors ends, the crystal defects formed by the electron beam irradiation and the proton implantation are recovered and controlled to an appropriate amount of crystal defects. Therefore, for example, it is possible to improve a breakdown voltage and reduce a leakage current.Type: ApplicationFiled: January 19, 2021Publication date: May 13, 2021Inventors: Takashi YOSHIMURA, Masayuki MIYAZAKI, Hiroshi TAKISHITA, Hidenao KURIBAYASHI
-
Patent number: 10930733Abstract: Hydrogen atoms and crystal defects are introduced into an n? semiconductor substrate by proton implantation. The crystal defects are generated in the n? semiconductor substrate by electron beam irradiation before or after the proton implantation. Then, a heat treatment for generating donors is performed. The amount of crystal defects is appropriately controlled during the heat treatment for generating donors to increase a donor generation rate. In addition, when the heat treatment for generating donors ends, the crystal defects formed by the electron beam irradiation and the proton implantation are recovered and controlled to an appropriate amount of crystal defects. Therefore, for example, it is possible to improve a breakdown voltage and reduce a leakage current.Type: GrantFiled: June 3, 2019Date of Patent: February 23, 2021Assignee: FUJI ELECTRIC CO., LTD.Inventors: Takashi Yoshimura, Masayuki Miyazaki, Hiroshi Takishita, Hidenao Kuribayashi
-
Patent number: 10651269Abstract: Proton irradiation is performed a plurality of times from rear surface of an n-type semiconductor substrate, which is an n? drift layer, forming an n-type FS layer having lower resistance than the n-type semiconductor substrate in the rear surface of the n? drift layer. When the proton irradiation is performed a plurality of times, the next proton irradiation is performed to as to compensate for a reduction in mobility due to disorder which remains after the previous proton irradiation. In this case, the second or subsequent proton irradiation is performed at the position of the disorder which is formed by the previous proton irradiation. In this way, even after proton irradiation and a heat treatment, the disorder is reduced and it is possible to prevent deterioration of characteristics, such as increase in leakage current. It is possible to form an n-type FS layer including a high-concentration hydrogen-related donor layer.Type: GrantFiled: February 4, 2019Date of Patent: May 12, 2020Assignee: FUJI ELECTRIC CO., LTD.Inventors: Hiroshi Takishita, Takashi Yoshimura, Masayuki Miyazaki, Hidenao Kuribayashi
-
Publication number: 20190319090Abstract: Hydrogen atoms and crystal defects are introduced into an n? semiconductor substrate by proton implantation. The crystal defects are generated in the n? semiconductor substrate by electron beam irradiation before or after the proton implantation. Then, a heat treatment for generating donors is performed. The amount of crystal defects is appropriately controlled during the heat treatment for generating donors to increase a donor generation rate. In addition, when the heat treatment for generating donors ends, the crystal defects formed by the electron beam irradiation and the proton implantation are recovered and controlled to an appropriate amount of crystal defects. Therefore, for example, it is possible to improve a breakdown voltage and reduce a leakage current.Type: ApplicationFiled: June 3, 2019Publication date: October 17, 2019Inventors: Takashi YOSHIMURA, Masayuki MIYAZAKI, Hiroshi TAKISHITA, Hidenao KURIBAYASHI
-
Patent number: 10355079Abstract: Hydrogen atoms and crystal defects are introduced into an n-semiconductor substrate by proton implantation. The crystal defects are generated in the n-semiconductor substrate by electron beam irradiation before or after the proton implantation. Then, a heat treatment for generating donors is performed. The amount of crystal defects is appropriately controlled during the heat treatment for generating donors to increase a donor generation rate. In addition, when the heat treatment for generating donors ends, the crystal defects formed by the electron beam irradiation and the proton implantation are recovered and controlled to an appropriate amount of crystal defects. Therefore, for example, it is possible to improve a breakdown voltage and reduce a leakage current.Type: GrantFiled: July 30, 2018Date of Patent: July 16, 2019Assignee: FUJI ELECTRIC CO., LTD.Inventors: Takashi Yoshimura, Masayuki Miyazaki, Hiroshi Takishita, Hidenao Kuribayashi
-
Publication number: 20190181221Abstract: Proton irradiation is performed a plurality of times from rear surface of an n-type semiconductor substrate, which is an n? drift layer, forming an n-type FS layer having lower resistance than the n-type semiconductor substrate in the rear surface of the n? drift layer. When the proton irradiation is performed a plurality of times, the next proton irradiation is performed to as to compensate for a reduction in mobility due to disorder which remains after the previous proton irradiation. In this case, the second or subsequent proton irradiation is performed at the position of the disorder which is formed by the previous proton irradiation. In this way, even after proton irradiation and a heat treatment, the disorder is reduced and it is possible to prevent deterioration of characteristics, such as increase in leakage current. It is possible to form an n-type FS layer including a high-concentration hydrogen-related donor layer.Type: ApplicationFiled: February 4, 2019Publication date: June 13, 2019Inventors: Hiroshi TAKISHITA, Takashi YOSHIMURA, Masayuki MIYAZAKI, Hidenao KURIBAYASHI
-
Patent number: 10199453Abstract: Proton irradiation is performed a plurality of times from rear surface of an n-type semiconductor substrate, which is an n? drift layer, forming an n-type FS layer having lower resistance than the n-type semiconductor substrate in the rear surface of the n? drift layer. When the proton irradiation is performed a plurality of times, the next proton irradiation is performed to as to compensate for a reduction in mobility due to disorder which remains after the previous proton irradiation. In this case, the second or subsequent proton irradiation is performed at the position of the disorder which is formed by the previous proton irradiation. In this way, even after proton irradiation and a heat treatment, the disorder is reduced and it is possible to prevent deterioration of characteristics, such as increase in leakage current. It is possible to form an n-type FS layer including a high-concentration hydrogen-related donor layer.Type: GrantFiled: July 25, 2018Date of Patent: February 5, 2019Assignee: FUJI ELECTRIC CO., LTD.Inventors: Hiroshi Takishita, Takashi Yoshimura, Masayuki Miyazaki, Hidenao Kuribayashi
-
Publication number: 20180350901Abstract: Hydrogen atoms and crystal defects are introduced into an n-semiconductor substrate by proton implantation. The crystal defects are generated in the n-semiconductor substrate by electron beam irradiation before or after the proton implantation. Then, a heat treatment for generating donors is performed. The amount of crystal defects is appropriately controlled during the heat treatment for generating donors to increase a donor generation rate. In addition, when the heat treatment for generating donors ends, the crystal defects formed by the electron beam irradiation and the proton implantation are recovered and controlled to an appropriate amount of crystal defects. Therefore, for example, it is possible to improve a breakdown voltage and reduce a leakage current.Type: ApplicationFiled: July 30, 2018Publication date: December 6, 2018Inventors: Takashi YOSHIMURA, Masayuki MIYAZAKI, Hiroshi TAKISHITA, Hidenao KURIBAYASHI
-
Publication number: 20180331176Abstract: Proton irradiation is performed a plurality of times from rear surface of an n-type semiconductor substrate, which is an n? drift layer, forming an n-type FS layer having lower resistance than the n-type semiconductor substrate in the rear surface of the n? drift layer. When the proton irradiation is performed a plurality of times, the next proton irradiation is performed to as to compensate for a reduction in mobility due to disorder which remains after the previous proton irradiation. In this case, the second or subsequent proton irradiation is performed at the position of the disorder which is formed by the previous proton irradiation. In this way, even after proton irradiation and a heat treatment, the disorder is reduced and it is possible to prevent deterioration of characteristics, such as increase in leakage current. It is possible to form an n-type FS layer including a high-concentration hydrogen-related donor layer.Type: ApplicationFiled: July 25, 2018Publication date: November 15, 2018Inventors: Hiroshi TAKISHITA, Takashi YOSHIMURA, Masayuki MIYAZAKI, Hidenao KURIBAYASHI
-
Patent number: 10128360Abstract: A method of producing a semiconductor device is disclosed in which, after proton implantation is performed, a hydrogen-induced donor is formed by a furnace annealing process to form an n-type field stop layer. A disorder generated in a proton passage region is reduced by a laser annealing process to form an n-type disorder reduction region. As such, the n-type field stop layer and the n-type disorder reduction region are formed by the proton implantation. Therefore, it is possible to provide a stable and inexpensive semiconductor device which has low conduction resistance and can improve electrical characteristics, such as a leakage current, and a method for producing the semiconductor device.Type: GrantFiled: December 11, 2017Date of Patent: November 13, 2018Assignee: FUJI ELECTRIC CO., LTD.Inventors: Masayuki Miyazaki, Takashi Yoshimura, Hiroshi Takishita, Hidenao Kuribayashi
-
Patent number: 10115587Abstract: A reverse blocking IGBT is manufactured using a silicon wafer sliced from a single crystal silicon ingot which is manufactured by a floating method using a single crystal silicon ingot manufactured by a Czochralski method as a raw material. A separation layer for ensuring a reverse blocking performance of the reverse blocking IGBT is formed by diffusing impurities implanted into the silicon wafer using a thermal diffusion process. The thermal diffusion process for forming the separation layer is performed in an inert gas atmosphere at a temperature equal to or more than 1290° C. and less than the melting point of silicon. In this way, no crystal defect occurs in the silicon wafer and it is possible to prevent the occurrence of a reverse breakdown voltage defect or a forward defect in the reverse blocking IGBT and thus improve the yield of a semiconductor element.Type: GrantFiled: February 23, 2012Date of Patent: October 30, 2018Assignee: FUJI ELECTRIC CO., LTD.Inventors: Haruo Nakazawa, Masaaki Ogino, Hidenao Kuribayashi, Hideaki Teranishi
-
Patent number: 10056449Abstract: Proton irradiation is performed a plurality of times from rear surface of an n-type semiconductor substrate, which is an n? drift layer, forming an n-type FS layer having lower resistance than the n-type semiconductor substrate in the rear surface of the n? drift layer. When the proton irradiation is performed a plurality of times, the next proton irradiation is performed to as to compensate for a reduction in mobility due to disorder which remains after the previous proton irradiation. In this case, the second or subsequent proton irradiation is performed at the position of the disorder which is formed by the previous proton irradiation. In this way, even after proton irradiation and a heat treatment, the disorder is reduced and it is possible to prevent deterioration of characteristics, such as increase in leakage current. It is possible to form an n-type FS layer including a high-concentration hydrogen-related donor layer.Type: GrantFiled: July 28, 2017Date of Patent: August 21, 2018Assignee: FUJI ELECTRIC CO., LTD.Inventors: Hiroshi Takishita, Takashi Yoshimura, Masayuki Miyazaki, Hidenao Kuribayashi
-
Patent number: 10056451Abstract: Hydrogen atoms and crystal defects are introduced into an n? semiconductor substrate by proton implantation. The crystal defects are generated in the n? semiconductor substrate by electron beam irradiation before or after the proton implantation. Then, a heat treatment for generating donors is performed. The amount of crystal defects is appropriately controlled during the heat treatment for generating donors to increase a donor generation rate. In addition, when the heat treatment for generating donors ends, the crystal defects formed by the electron beam irradiation and the proton implantation are recovered and controlled to an appropriate amount of crystal defects. Therefore, for example, it is possible to improve a breakdown voltage and reduce a leakage current.Type: GrantFiled: July 17, 2017Date of Patent: August 21, 2018Assignee: FUJI ELECTRIC CO., LTD.Inventors: Takashi Yoshimura, Masayuki Miyazaki, Hiroshi Takishita, Hidenao Kuribayashi
-
Patent number: 10050106Abstract: A p+ collector layer is provided in a rear surface of a semiconductor substrate which will be an n? drift layer and an n+ field stop layer is provided in a region which is deeper than the p+ collector layer formed on the rear surface side. A front surface element structure is formed on the front surface of the semiconductor substrate and then protons are radiated to the rear surface of the semiconductor substrate at an acceleration voltage corresponding to the depth at which the n+ field stop layer is formed. A first annealing process is performed at an annealing temperature corresponding to the proton irradiation to change the protons into donors, thereby forming a field stop layer. Then, annealing is performed using annealing conditions suitable for the conditions of a plurality of proton irradiation processes to recover each crystal defect formed by each proton irradiation process.Type: GrantFiled: June 3, 2016Date of Patent: August 14, 2018Assignee: FUJI ELECTRIC CO., LTD.Inventors: Masayuki Miyazaki, Takashi Yoshimura, Hiroshi Takishita, Hidenao Kuribayashi
-
Publication number: 20180108765Abstract: A method of producing a semiconductor device is disclosed in which, after proton implantation is performed, a hydrogen-induced donor is formed by a furnace annealing process to form an n-type field stop layer. A disorder generated in a proton passage region is reduced by a laser annealing process to form an n-type disorder reduction region. As such, the n-type field stop layer and the n-type disorder reduction region are formed by the proton implantation. Therefore, it is possible to provide a stable and inexpensive semiconductor device which has low conduction resistance and can improve electrical characteristics, such as a leakage current, and a method for producing the semiconductor device.Type: ApplicationFiled: December 11, 2017Publication date: April 19, 2018Inventors: Masayuki MIYAZAKI, Takashi YOSHIMURA, Hiroshi TAKISHITA, Hidenao KURIBAYASHI
-
Patent number: 9941362Abstract: A method of manufacturing a silicon carbide semiconductor device. The method includes providing an n-type semiconductor substrate having first and second principal surfaces, introducing an impurity from a first principal surface of the semiconductor substrate at a first position, activating the impurity to form a diffusion layer in the semiconductor substrate at a second position, implanting protons at a third position that is deeper from the first principal surface than the first position, the protons generating crystal defects in a region through which the protons pass, converting by thermal treating the protons into hydrogen induced donors to form an n-type field stop layer at a fourth position deeper from the first principal surface than the second position, reducing by the thermal treating the generated crystal defects to form an n-type crystal defect reduction region, and forming an electrode on the second principal surface after implanting the protons.Type: GrantFiled: October 26, 2016Date of Patent: April 10, 2018Assignee: FUJI ELECTRIC CO., LTD.Inventors: Hidenao Kuribayashi, Masayuki Miyazaki
-
Patent number: 9842918Abstract: A method of producing a semiconductor device is disclosed in which, after proton implantation is performed, a hydrogen-induced donor is formed by a furnace annealing process to form an n-type field stop layer. A disorder generated in a proton passage region is reduced by a laser annealing process to form an n-type disorder reduction region. As such, the n-type field stop layer and the n-type disorder reduction region are formed by the proton implantation. Therefore, it is possible to provide a stable and inexpensive semiconductor device which has low conduction resistance and can improve electrical characteristics, such as a leakage current, and a method for producing the semiconductor device.Type: GrantFiled: October 7, 2016Date of Patent: December 12, 2017Assignee: FUJI ELECTRIC CO., LTD.Inventors: Masayuki Miyazaki, Takashi Yoshimura, Hiroshi Takishita, Hidenao Kuribayashi
-
Publication number: 20170345888Abstract: Proton irradiation is performed a plurality of times from rear surface of an n-type semiconductor substrate, which is an n? drift layer, forming an n-type FS layer having lower resistance than the n-type semiconductor substrate in the rear surface of the n? drift layer. When the proton irradiation is performed a plurality of times, the next proton irradiation is performed to as to compensate for a reduction in mobility due to disorder which remains after the previous proton irradiation. In this case, the second or subsequent proton irradiation is performed at the position of the disorder which is formed by the previous proton irradiation. In this way, even after proton irradiation and a heat treatment, the disorder is reduced and it is possible to prevent deterioration of characteristics, such as increase in leakage current. It is possible to form an n-type FS layer including a high-concentration hydrogen-related donor layer.Type: ApplicationFiled: July 28, 2017Publication date: November 30, 2017Inventors: Hiroshi TAKISHITA, Takashi YOSHIMURA, Masayuki MIYAZAKI, Hidenao KURIBAYASHI