Abstract: An X-ray tube including a vacuum vessel, a cathode and an anode fixedly disposed inside the vacuum vessel, and a rotary mechanism that rotates the vacuum vessel, where the cathode is disposed on the circumference with a rotary shaft of the rotary mechanism as its center and includes multiple cathode parts that can individually be turned ON/OFF, and where the anode includes parts opposite to the multiple cathode parts, respectively.

Abstract: Controlling total emission current of an electron emitting construct in an x-ray emitting device by providing a cathode, providing multiple active areas each active area having a gated cone electron source, including multiple emitter tips arranged in an array, a gate electrode, and a gate interconnect lead connected to the gate electrode, providing an x-ray emitting construct comprising an anode, the anode being an x-ray target, situating the x-ray emitting construct facing the active areas face each other, selecting a set of active areas, and activating selected active areas by conductively connecting a voltage source to their associated the gate electrode interconnect lead.

Abstract: The X-ray tube disclosed herein includes an electron emission unit including an electron emission element using a cold cathode; an anode unit disposed opposite to the electron emission unit, with which electrons emitted from the electron emission unit collide; and a focus structure disposed between the electron emission unit and a target unit disposed on a surface of the anode unit that is opposed to the electron emission unit. The electron emission unit is divided into a first region and a second region which can independently be turned ON/OFF. The X-ray tube is focus-designed such that collision regions, at the anode unit, of electron beams emitted from the respective first region and second region substantially coincide with each other.

Abstract: A robust cold cathode uses an electron emitting construct design possibly for an x-ray emitter device. The electron beam emitted by the emitting construct is focused and accelerated by an electrical field towards an electron anode target. A shield is provided to prevent a cold cathode from being damaged by ion bombardment in high-voltage applications and a non-emitter zone may provide a robust ion bombardment zone. The system is further configured to provide an angled target anode or a stepped target anode to further reduce the ion bombardment damage.

Abstract: A robust cold cathode uses an electron emitting construct design possibly for an x-ray emitter device. The electron beam emitted by the emitting construct is focused and accelerated by an electrical field towards an electron anode target. A shield is provided to prevent a cold cathode from being damaged by ion bombardment in high-voltage applications and a non-emitter zone may provide a robust ion bombardment zone. The system is further configured to provide an angled target anode or a stepped target anode to further reduce the ion bombardment damage.

Abstract: Controlling total emission current of an electron emitting construct in an x-ray emitting device by providing a cathode, providing multiple active areas each active area having a gated cone electron source, including multiple emitter tips arranged in an array, a gate electrode, and a gate interconnect lead connected to the gate electrode, providing an x-ray emitting construct comprising an anode, the anode being an x-ray target, situating the x-ray emitting construct facing the active areas face each other, selecting a set of active areas, and activating selected active areas by conductively connecting a voltage source to their associated the gate electrode interconnect lead.

Abstract: An electron emitting construct design of an x-ray emitter device is disclosed configured to facilitate radiation in the X-ray spectrum and further relates to preventing a cold cathode from being damaged by ion bombardment in high-voltage applications. The electron beam emitted by the emitting construct is focused and accelerated by an electrical field towards an electron anode target operable to attract electron beam to an associated focal spot, wherein the generated ions are accelerated along a trajectory perpendicular to the electric field in parallel to the surface of the electron anode target. More specifically, the present invention relates to realizing a robust cold cathode to avoid ion bombardments damages in high-voltage applications, by means of setting non-emitter zone surrounded by or set between the emitter areas. The system is further configured to provide an angled target anode or a stepped target anode to further reduce the ion bombardment damage.

Abstract: The disclosure relates to an image capture device comprising an electron receiving construct and an electron emitting construct, and further comprising an inner gap providing an unobstructed space between the electron emitting construct and the electron receiving construct. The disclosure further relates to an x-ray emitting device comprising an x-ray emitting construct and an electron emitting construct, said x-ray emitting construct comprising an anode, the anode being an x-ray target, wherein the x-ray emitting device may comprise an inner gap providing an unobstructed space between the electron emitting construct and the x-ray emitting construct. The disclosure further relates to an x-ray imaging system comprising an image capture device and an x-ray emitting device.

Abstract: An image capture device and an x-ray emitting device are introduced comprising an electron receiving construct and an electron emitting construct separated by a spacer. The electron receiving construct comprises a faceplate, an anode and an inward facing photoconductor. The electron emitting construct comprises: a backplate; a substrate; a cathode; a plurality of field emission type electron sources arranged in an array; a stratified resistive layer between the field emission type electron source and the cathode; a gate electrode; a focus structure and a gate electrode support structure configured to support the gate electrode at a required cathode-gate spacing from the cathode.

Abstract: An X-ray tube comprises a vacuum vessel; a cathode and an anode fixedly disposed inside the vacuum vessel; and a rotary mechanism that rotates the vacuum vessel. The cathode is disposed on the circumference with the rotary shaft of the rotary mechanism as its center and includes a plurality of cathode parts that can individually be turned ON/OFF. The anode includes parts opposite to the plurality of cathode parts, respectively.

Abstract: The X-ray tube disclosed herein includes an electron emission unit including an electron emission element using a cold cathode; an anode unit disposed opposite to the electron emission unit, with which electrons emitted from the electron emission unit collide; and a focus structure disposed between the electron emission unit and a target unit disposed on a surface of the anode unit that is opposed to the electron emission unit. The electron emission unit is divided into first and second regions which can independently be turned ON/OFF. The X-ray tube is focus-designed such that collision regions, at the anode unit, of electron beams emitted from the respective first and second regions substantially coincide with each other.

Abstract: An electron emitting construct design of an x-ray emitter device is disclosed configured to facilitate radiation in the X-ray spectrum and further relates to preventing a cold cathode from being damaged by ion bombardment in high-voltage applications. The electron beam emitted by the emitting construct is focused and accelerated by an electrical field towards an electron anode target operable to attract electron beam to an associated focal spot, wherein the generated ions are accelerated along a trajectory perpendicular to the electric field in parallel to the surface of the electron anode target. More specifically, the present invention relates to realizing a robust cold cathode to avoid ion bombardments damages in high-voltage applications, by means of setting non-emitter zone surrounded by or set between the emitter areas. The system is further configured to provide an angled target anode or a stepped target anode to further reduce the ion bombardment damage.

Abstract: An image capture device and an x-ray emitting device are introduced comprising an electron receiving construct and an electron emitting construct separated by a spacer. The electron receiving construct comprises a faceplate, an anode and an inward facing photoconductor. The electron emitting construct comprises: a backplate; a substrate; a cathode; a plurality of field emission type electron sources arranged in an array; a stratified resistive layer between the field emission type electron source and the cathode; a gate electrode; a focus structure and a gate electrode support structure configured to support the gate electrode at a required cathode-gate spacing from the cathode.

Abstract: The disclosure relates to an image capture device comprising an electron receiving construct and an electron emitting construct, and further comprising an inner gap providing an unobstructed space between the electron emitting construct and the electron receiving construct. The disclosure further relates to an x-ray emitting device comprising an x-ray emitting construct and an electron emitting construct, said x-ray emitting construct comprising an anode, the anode being an x-ray target, wherein the x-ray emitting device may comprise an inner gap providing an unobstructed space between the electron emitting construct and the x-ray emitting construct. The disclosure further relates to an x-ray imaging system comprising an image capture device and an x-ray emitting device.

Abstract: A flat panel display and manufacturing method therefor is provided having a baseplate hermetically sealed to a faceplate. A first electrode and a resistive layer are formed on the baseplate. An insulating layer is deposited on the resistive layer. A second electrode is formed over the insulating layer. A passivation layer is deposited over the insulating layer and a gate is formed over the passivation layer. Openings are concurrently formed in the gate and insulation layer and used to form an emitter cavity. A conductive glue is deposited to form a gate-to-electrode contact for connecting the gate and the second electrode. An emitter is formed in the emitter cavity and emitter material outside of the emitter cavity is removed.

Abstract: A flat panel display and manufacturing method therefor is provided having a baseplate hermetically sealed to a faceplate. A first electrode and a resistive layer are formed on the baseplate. An insulating layer is deposited on the resistive layer. A second electrode is formed over the insulating layer. A passivation layer is deposited over the insulating layer and a gate is formed over the passivation layer. Openings are concurrently formed in the gate and insulation layer and used to form an emitter cavity. A conductive glue is deposited to form a gate-to-electrode contact for connecting the gate and the second electrode. An emitter is formed in the emitter cavity and emitter material outside of the emitter cavity is removed.

Abstract: A multilayer interconnect structure for a semiconductor device. The structure comprises a lower patterned metallization layer, a higher patterned metallization layer, and filled holes for electrically interconnecting these two layers. The two metallization layers are formed out of aluminum or an aluminum alloy by high-temperature aluminum sputtering or aluminum reflow techniques. A suction-preventing layer is formed either at the bottoms of the contact holes or on the surface of the lower metallization layer to prevent the material of the lower metallization layer from being sucked into the overlying contact holes.

Abstract: The disclosure relates to a method of forming an interconnection structure. In the method, firstly, a SOG layer is deposited on a first aluminum conductive layer which is formed on a substrate. Then, a through-hole is formed by opening the SOG layer so as to expose two opposed surfaces of the SOG layer and an upper surface of the first conductive layer. Then, the substrate, the first conductive layer and the SOG layer are heated at a first temperature ranging from 450.degree. to 550.degree. C. Then, a titanium layer is formed on the through-hole so as to mask the two opposed surfaces of the SOG layer. Then, a second aluminum conductive layer is deposited on the SOG layer by sputtering so as to fill the through-hole with the second conductive layer. During the sputtering of the second conductive layer, the release of water vapor from the SOG layer is suppressed, thereby obtaining an interconnection structure having a good contact.