Patents by Inventor Hideo Arimoto

Hideo Arimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120224594
    Abstract: A wavelength tunable filter and a wavelength tunable laser module are a codirectional coupler type whose characteristics do not vary significantly with a process error. They are structured so as to include a semiconductor substrate which has a first optical waveguide and a second optical waveguide. The first and the second optical waveguides are extended from a first side of the semiconductor substrate to an opposing second side thereof. The first optical waveguide includes a first core layer, which has a planar layout having periodic convexes and concaves, and a pair of electrodes, which vertically sandwich the first core layer. The second optical waveguide includes a second core layer, which has a lower refractive index than the first core layer. Further, a layer having the same composition and film thickness as the second core layer is placed under the first core layer.
    Type: Application
    Filed: May 11, 2012
    Publication date: September 6, 2012
    Applicant: OPNEXT JAPAN, INC.
    Inventors: Hideo ARIMOTO, Masahiro AOKI
  • Patent number: 8179931
    Abstract: A wavelength tunable filter and a wavelength tunable laser module are a codirectional coupler type whose characteristics do not vary significantly with a process error. They are structured so as to include a semiconductor substrate which has a first optical waveguide and a second optical waveguide. The first and the second optical waveguides are extended from a first side of the semiconductor substrate to an opposing second side thereof. The first optical waveguide includes a first core layer, which has a planar layout having periodic convexes and concaves, and a pair of electrodes, which vertically sandwich the first core layer. The second optical waveguide includes a second core layer, which has a lower refractive index than the first core layer. Further, a layer having the same composition and film thickness as the second core layer is placed under the first core layer.
    Type: Grant
    Filed: November 20, 2009
    Date of Patent: May 15, 2012
    Assignee: Opnext Japan, Inc.
    Inventors: Hideo Arimoto, Masahiro Aoki
  • Patent number: 8000359
    Abstract: A laser device capable of preventing deterioration of a light signal and a controlling method therefor are provided.
    Type: Grant
    Filed: December 11, 2008
    Date of Patent: August 16, 2011
    Assignee: Opnext Japan, Inc.
    Inventors: Hiroyasu Sasaki, Hideo Arimoto
  • Patent number: 7970041
    Abstract: A wavelength variable laser smaller in size than the conventional one can be achieved by arranging a gain chip, an etalon filter and a fifth reflective mirror on an AlN submount and longitudinally integrating the gain chip in which a 45° mirror and a lens are integrated and the etalon filter. A laser cavity has a structure in which light passes through an active layer from a first reflective mirror realized by an end surface of the gain chip, is reflected by the 45° mirror at an angle of 90° and then passes through the lens. The light having passed through the lens is converted into parallel light, passes through the etalon filter and reaches the fifth reflective mirror and is then reflected. The reflected light returns through the same optical path and reaches the first reflective mirror realized by the end surface of the gain chip.
    Type: Grant
    Filed: April 17, 2009
    Date of Patent: June 28, 2011
    Assignee: Hitachi, Ltd.
    Inventors: Hideo Arimoto, Masahiro Aoki
  • Patent number: 7816702
    Abstract: There are a silicon laser device having a IV-group semiconductor such as silicon or germanium equivalent to the silicon as a basic constituent element on a substrate made of the silicon, and the like by a method capable of easily forming the silicon laser device by using a general silicon process, and a manufacturing method thereof.
    Type: Grant
    Filed: October 3, 2008
    Date of Patent: October 19, 2010
    Assignee: Hitachi, Ltd.
    Inventors: Shinichi Saito, Masahiro Aoki, Hiroyuki Uchiyama, Hideo Arimoto, Noriyuki Sakuma, Jiro Yamamoto
  • Publication number: 20100142568
    Abstract: Disclosed are a wavelength tunable filter and a wavelength tunable laser module that are of a codirectional coupler type whose characteristics do not significantly vary with a process error. They are structured so as to include a semiconductor substrate which has a first optical waveguide and a second optical waveguide. The first and the second optical waveguide are extended from a first side of the semiconductor substrate to an opposing second side thereof. The first optical waveguide includes a first core layer, which has a planar layout having periodic convexes and concaves, and a pair of electrodes, which vertically sandwich the first core layer. The second optical waveguide includes a second core layer, which has a lower refractive index than the first core layer. Further, a layer having the same composition and film thickness as the second core layer is placed under the first core layer.
    Type: Application
    Filed: November 20, 2009
    Publication date: June 10, 2010
    Applicant: OPNEXT JAPAN, INC.
    Inventors: Hideo ARIMOTO, Masahiro AOKI
  • Publication number: 20100142885
    Abstract: The first and second optical waveguide device portions are optically coupled by 45-degree total reflection mirrors integrally formed in the respective device portions. The light generated by the first optical waveguide device portion is bent upward by the total reflection mirror of the first optical waveguide device portion. The light is totally reflected by the 45-degree total reflection mirror of the second optical waveguide device portion, and coupled to the second optical waveguide device portion. The first optical waveguide device portion has a lens device for focusing the emitted light onto a light emitting portion. The second optical waveguide device portion has a lens device for focusing the incident light onto a light receiving portion.
    Type: Application
    Filed: December 2, 2009
    Publication date: June 10, 2010
    Applicant: HITACHI, LTD.
    Inventors: Kazunori SHINODA, Hideo ARIMOTO, Masahiro AOKI, Koichiro ADACHI
  • Patent number: 7733933
    Abstract: Included are: a gain chip having a gain unit and a phase control region; a current supply for causing a positive current to flow to the phase control region; a voltage supply for applying a bias voltage to the phase control region; and a control unit for selectively driving the current supply or the voltage supply depending on a direction of the wavelength shift. The control unit drives the current supply when a laser wavelength is to be shifted to a shorter wavelength side from a wavelength with the current supply and the voltage supply being turned off, and drives the voltage supply when the laser wavelength is to be shifted to a longer wavelength side from a wavelength with the current supply and the voltage supply being turned off.
    Type: Grant
    Filed: August 3, 2007
    Date of Patent: June 8, 2010
    Assignee: Opnext Japan, Inc.
    Inventors: Hideo Arimoto, Kazuhiro Ito, Hiroyasu Sasaki
  • Patent number: 7653106
    Abstract: A method of bonding a compound semiconductor on a silicon waveguide is used for attaining a laser above a silicon substrate. While it is essential to attain laser oscillation by injection of a current, since amorphous is formed at the bonding surface of a silicon compound semiconductor, it is difficult to directly inject the current through the silicon waveguide to the compound semiconductor. Further, even when an electrode is formed near the waveguide and the current is injected, since the current is not injected near the silicon waveguide, laser oscillation through the silicon waveguide can not be attained. The problem is solved by forming a structure of laterally injecting a current to the silicon waveguide and concentrating the current near the silicon waveguide in a compound semiconductor.
    Type: Grant
    Filed: December 20, 2007
    Date of Patent: January 26, 2010
    Assignee: Hitachi, Ltd.
    Inventor: Hideo Arimoto
  • Publication number: 20090268772
    Abstract: A wavelength variable laser smaller in size than the conventional one can be achieved by arranging a gain chip, an etalon filter and a fifth reflective mirror on an AlN submount and longitudinally integrating the gain chip in which a 45° mirror and a lens are integrated and the etalon filter. A laser cavity has a structure in which light passes through an active layer from a first reflective mirror realized by an end surface of the gain chip, is reflected by the 45° mirror at an angle of 90° and then passes through the lens. The light having passed through the lens is converted into parallel light, passes through the etalon filter and reaches the fifth reflective mirror and is then reflected. The reflected light returns through the same optical path and reaches the first reflective mirror realized by the end surface of the gain chip.
    Type: Application
    Filed: April 17, 2009
    Publication date: October 29, 2009
    Inventors: Hideo Arimoto, Masahiro Aoki
  • Publication number: 20090262762
    Abstract: A laser device capable of preventing deterioration of a light signal and a controlling method therefor are provided.
    Type: Application
    Filed: December 11, 2008
    Publication date: October 22, 2009
    Inventors: Hiroyasu Sasaki, Hideo Arimoto
  • Publication number: 20090263078
    Abstract: Plural p-n junctions are formed in a waveguide such that they have junction interfaces in a normal direction to a surface of a substrate (to an extending direction of the substrate). Accordingly, a doping concentration changes in only a horizontal direction in the substrate, and it is possible to fabricate using the same processes as those for silicon electronic devices and to perform device fabricating at a low cost. Moreover, two or more junction interfaces are formed in the waveguide and thus an occupied area of the waveguide in a refractive index modulation region expands. Therefore, the efficiency of the refractive index modulation can be improved and a low-voltage operation is possible.
    Type: Application
    Filed: April 17, 2009
    Publication date: October 22, 2009
    Inventors: Kazuhiko Hosomi, Toshiki Sugawara, Yasunobu Matsuoka, Hideo Arimoto, Shinichi Saito
  • Patent number: 7605402
    Abstract: A chip carrier includes a metal-coated portion formed on a front surface of a substrate and to be mounted a device, and a rear surface of the substrate being coated with a metal, in which a metal-coated portion is formed on a side surface of the substrate and the metal-coated portion on the front surface of substrate is connected with the metal-coated portion on the rear surface by the metal-coated portion formed on the side surface of the substrate, thereby maintaining frequency characteristics of the optical semiconductor device.
    Type: Grant
    Filed: November 18, 2005
    Date of Patent: October 20, 2009
    Assignee: OpNext Japan, Inc.
    Inventors: Noriko Sasada, Kazuhiko Naoe, Masataka Shirai, Hideo Arimoto, Satoshi Tada
  • Publication number: 20090090925
    Abstract: There are a silicon laser device having a IV-group semiconductor such as silicon or germanium equivalent to the silicon as a basic constituent element on a substrate made of the silicon, and the like by a method capable of easily forming the silicon laser device by using a general silicon process, and a manufacturing method thereof.
    Type: Application
    Filed: October 3, 2008
    Publication date: April 9, 2009
    Inventors: Shinichi Saito, Masahiro Aoki, Hiroyuki Uchiyama, Hideo Arimoto, Noriyuki Sakuma, Jiro Yamamoto
  • Patent number: 7502403
    Abstract: In a horizontal cavity surface emitted laser, there is provided a device structure that is capable of obtaining a circular narrow-divergence emitted beam that is high in the optical coupling efficiency with a fiber. As a first means, there is provided a horizontal cavity surface emitting laser having a structure in which the plane mirror that is inclined by 45° and the bottom lens of the oval configuration are integrally structured. As a second means, there is provided a horizontal cavity surface emitting laser in which the mirror having the columnar front surface configuration inclined by 45° and the bottom lens of the columnar front surface configuration are integrally structured. Since the horizontal component and the vertical component of the laser beam can be shaped, independently, through the above means. As a result, it is possible to obtain the circular narrow-divergence emitted beam.
    Type: Grant
    Filed: August 1, 2007
    Date of Patent: March 10, 2009
    Assignee: Opnext Japan, Inc.
    Inventors: Kazunori Shinoda, Koichiro Adachi, Hideo Arimoto
  • Publication number: 20080291957
    Abstract: Included are: a gain chip having a gain unit and a phase control region; a current supply for causing a positive current to flow to the phase control region; a voltage supply for applying a bias voltage to the phase control region; and a control unit for selectively driving the current supply or the voltage supply depending on a direction of the wavelength shift. The control unit drives the current supply when a laser wavelength is to be shifted to a shorter wavelength side from a wavelength with the current supply and the voltage supply being turned off, and drives the voltage supply when the laser wavelength is to be shifted to a longer wavelength side from a wavelength with the current supply and the voltage supply being turned off.
    Type: Application
    Filed: August 3, 2007
    Publication date: November 27, 2008
    Inventors: Hideo ARIMOTO, Kzuhiro ITO, Hiroyasu SASAKI
  • Patent number: 7457339
    Abstract: Arrayed DBR (Distributed Bragg Reflector) laser shows a problem that spectrum purity is deteriorated when a current is flowed in a semiconductor optical amplifier for attaining a sufficient optical output. In addition, the arrayed waveguide grating laser shows a problem that the spectrum purity is deteriorated by leakage of light. An output end of each of the laser channels is provided with a gate (a core) that can be controlled through bias application. The gate has a function for amplifying light when the laser channels are operated and for absorbing light when the laser channels are not operated.
    Type: Grant
    Filed: March 2, 2005
    Date of Patent: November 25, 2008
    Assignee: Hitachi, Ltd.
    Inventor: Hideo Arimoto
  • Publication number: 20080266638
    Abstract: In a horizontal cavity surface emitted laser, there is provided a device structure that is capable of obtaining a circular narrow-divergence emitted beam that is high in the optical coupling efficiency with a fiber. As a first means, there is provided a horizontal cavity surface emitting laser having a structure in which the plane mirror that is inclined by 45° and the bottom lens of the oval configuration are integrally structured. As a second means, there is provided a horizontal cavity surface emitting laser in which the mirror having the columnar front surface configuration inclined by 45° and the bottom lens of the columnar front surface configuration are integrally structured. Since the horizontal component and the vertical component of the laser beam can be shaped, independently, through the above means. As a result, it is possible to obtain the circular narrow-divergence emitted beam.
    Type: Application
    Filed: August 1, 2007
    Publication date: October 30, 2008
    Inventors: Kazunori Shinoda, Koichiro Adachi, Hideo Arimoto
  • Publication number: 20080198888
    Abstract: A method of bonding a compound semiconductor on a silicon waveguide is used for attaining a laser above a silicon substrate. While it is essential to attain laser oscillation by injection of a current, since amorphous is formed at the bonding surface of a silicon compound semiconductor, it is difficult to directly inject the current through the silicon waveguide to the compound semiconductor. Further, even when an electrode is formed near the waveguide and the current is injected, since the current is not injected near the silicon waveguide, laser oscillation through the silicon waveguide can not be attained. The problem is solved by forming a structure of laterally injecting a current to the silicon waveguide and concentrating the current near the silicon waveguide in a compound semiconductor.
    Type: Application
    Filed: December 20, 2007
    Publication date: August 21, 2008
    Inventor: Hideo Arimoto
  • Publication number: 20080137695
    Abstract: A core of an optical waveguide and a core of a waveguide type optical device are adjacently disposed, and a layer is continuously formed at one end of the core of the waveguide type optical device, wherein an effective refractive index of the layer decreases toward a long axis direction of the optical waveguide stripe.
    Type: Application
    Filed: December 5, 2007
    Publication date: June 12, 2008
    Inventors: Makoto Takahashi, Hideo Arimoto, Kazuhiko Hosomi, Toshihiko Fukamachi, Shigeki Makino, Yasunobu Matsuoka, Toshiki Sugawara