Patents by Inventor Hideo Arimoto
Hideo Arimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120224594Abstract: A wavelength tunable filter and a wavelength tunable laser module are a codirectional coupler type whose characteristics do not vary significantly with a process error. They are structured so as to include a semiconductor substrate which has a first optical waveguide and a second optical waveguide. The first and the second optical waveguides are extended from a first side of the semiconductor substrate to an opposing second side thereof. The first optical waveguide includes a first core layer, which has a planar layout having periodic convexes and concaves, and a pair of electrodes, which vertically sandwich the first core layer. The second optical waveguide includes a second core layer, which has a lower refractive index than the first core layer. Further, a layer having the same composition and film thickness as the second core layer is placed under the first core layer.Type: ApplicationFiled: May 11, 2012Publication date: September 6, 2012Applicant: OPNEXT JAPAN, INC.Inventors: Hideo ARIMOTO, Masahiro AOKI
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Patent number: 8179931Abstract: A wavelength tunable filter and a wavelength tunable laser module are a codirectional coupler type whose characteristics do not vary significantly with a process error. They are structured so as to include a semiconductor substrate which has a first optical waveguide and a second optical waveguide. The first and the second optical waveguides are extended from a first side of the semiconductor substrate to an opposing second side thereof. The first optical waveguide includes a first core layer, which has a planar layout having periodic convexes and concaves, and a pair of electrodes, which vertically sandwich the first core layer. The second optical waveguide includes a second core layer, which has a lower refractive index than the first core layer. Further, a layer having the same composition and film thickness as the second core layer is placed under the first core layer.Type: GrantFiled: November 20, 2009Date of Patent: May 15, 2012Assignee: Opnext Japan, Inc.Inventors: Hideo Arimoto, Masahiro Aoki
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Patent number: 8000359Abstract: A laser device capable of preventing deterioration of a light signal and a controlling method therefor are provided.Type: GrantFiled: December 11, 2008Date of Patent: August 16, 2011Assignee: Opnext Japan, Inc.Inventors: Hiroyasu Sasaki, Hideo Arimoto
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Patent number: 7970041Abstract: A wavelength variable laser smaller in size than the conventional one can be achieved by arranging a gain chip, an etalon filter and a fifth reflective mirror on an AlN submount and longitudinally integrating the gain chip in which a 45° mirror and a lens are integrated and the etalon filter. A laser cavity has a structure in which light passes through an active layer from a first reflective mirror realized by an end surface of the gain chip, is reflected by the 45° mirror at an angle of 90° and then passes through the lens. The light having passed through the lens is converted into parallel light, passes through the etalon filter and reaches the fifth reflective mirror and is then reflected. The reflected light returns through the same optical path and reaches the first reflective mirror realized by the end surface of the gain chip.Type: GrantFiled: April 17, 2009Date of Patent: June 28, 2011Assignee: Hitachi, Ltd.Inventors: Hideo Arimoto, Masahiro Aoki
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Patent number: 7816702Abstract: There are a silicon laser device having a IV-group semiconductor such as silicon or germanium equivalent to the silicon as a basic constituent element on a substrate made of the silicon, and the like by a method capable of easily forming the silicon laser device by using a general silicon process, and a manufacturing method thereof.Type: GrantFiled: October 3, 2008Date of Patent: October 19, 2010Assignee: Hitachi, Ltd.Inventors: Shinichi Saito, Masahiro Aoki, Hiroyuki Uchiyama, Hideo Arimoto, Noriyuki Sakuma, Jiro Yamamoto
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Publication number: 20100142568Abstract: Disclosed are a wavelength tunable filter and a wavelength tunable laser module that are of a codirectional coupler type whose characteristics do not significantly vary with a process error. They are structured so as to include a semiconductor substrate which has a first optical waveguide and a second optical waveguide. The first and the second optical waveguide are extended from a first side of the semiconductor substrate to an opposing second side thereof. The first optical waveguide includes a first core layer, which has a planar layout having periodic convexes and concaves, and a pair of electrodes, which vertically sandwich the first core layer. The second optical waveguide includes a second core layer, which has a lower refractive index than the first core layer. Further, a layer having the same composition and film thickness as the second core layer is placed under the first core layer.Type: ApplicationFiled: November 20, 2009Publication date: June 10, 2010Applicant: OPNEXT JAPAN, INC.Inventors: Hideo ARIMOTO, Masahiro AOKI
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Publication number: 20100142885Abstract: The first and second optical waveguide device portions are optically coupled by 45-degree total reflection mirrors integrally formed in the respective device portions. The light generated by the first optical waveguide device portion is bent upward by the total reflection mirror of the first optical waveguide device portion. The light is totally reflected by the 45-degree total reflection mirror of the second optical waveguide device portion, and coupled to the second optical waveguide device portion. The first optical waveguide device portion has a lens device for focusing the emitted light onto a light emitting portion. The second optical waveguide device portion has a lens device for focusing the incident light onto a light receiving portion.Type: ApplicationFiled: December 2, 2009Publication date: June 10, 2010Applicant: HITACHI, LTD.Inventors: Kazunori SHINODA, Hideo ARIMOTO, Masahiro AOKI, Koichiro ADACHI
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Patent number: 7733933Abstract: Included are: a gain chip having a gain unit and a phase control region; a current supply for causing a positive current to flow to the phase control region; a voltage supply for applying a bias voltage to the phase control region; and a control unit for selectively driving the current supply or the voltage supply depending on a direction of the wavelength shift. The control unit drives the current supply when a laser wavelength is to be shifted to a shorter wavelength side from a wavelength with the current supply and the voltage supply being turned off, and drives the voltage supply when the laser wavelength is to be shifted to a longer wavelength side from a wavelength with the current supply and the voltage supply being turned off.Type: GrantFiled: August 3, 2007Date of Patent: June 8, 2010Assignee: Opnext Japan, Inc.Inventors: Hideo Arimoto, Kazuhiro Ito, Hiroyasu Sasaki
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Patent number: 7653106Abstract: A method of bonding a compound semiconductor on a silicon waveguide is used for attaining a laser above a silicon substrate. While it is essential to attain laser oscillation by injection of a current, since amorphous is formed at the bonding surface of a silicon compound semiconductor, it is difficult to directly inject the current through the silicon waveguide to the compound semiconductor. Further, even when an electrode is formed near the waveguide and the current is injected, since the current is not injected near the silicon waveguide, laser oscillation through the silicon waveguide can not be attained. The problem is solved by forming a structure of laterally injecting a current to the silicon waveguide and concentrating the current near the silicon waveguide in a compound semiconductor.Type: GrantFiled: December 20, 2007Date of Patent: January 26, 2010Assignee: Hitachi, Ltd.Inventor: Hideo Arimoto
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Publication number: 20090268772Abstract: A wavelength variable laser smaller in size than the conventional one can be achieved by arranging a gain chip, an etalon filter and a fifth reflective mirror on an AlN submount and longitudinally integrating the gain chip in which a 45° mirror and a lens are integrated and the etalon filter. A laser cavity has a structure in which light passes through an active layer from a first reflective mirror realized by an end surface of the gain chip, is reflected by the 45° mirror at an angle of 90° and then passes through the lens. The light having passed through the lens is converted into parallel light, passes through the etalon filter and reaches the fifth reflective mirror and is then reflected. The reflected light returns through the same optical path and reaches the first reflective mirror realized by the end surface of the gain chip.Type: ApplicationFiled: April 17, 2009Publication date: October 29, 2009Inventors: Hideo Arimoto, Masahiro Aoki
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Publication number: 20090262762Abstract: A laser device capable of preventing deterioration of a light signal and a controlling method therefor are provided.Type: ApplicationFiled: December 11, 2008Publication date: October 22, 2009Inventors: Hiroyasu Sasaki, Hideo Arimoto
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Publication number: 20090263078Abstract: Plural p-n junctions are formed in a waveguide such that they have junction interfaces in a normal direction to a surface of a substrate (to an extending direction of the substrate). Accordingly, a doping concentration changes in only a horizontal direction in the substrate, and it is possible to fabricate using the same processes as those for silicon electronic devices and to perform device fabricating at a low cost. Moreover, two or more junction interfaces are formed in the waveguide and thus an occupied area of the waveguide in a refractive index modulation region expands. Therefore, the efficiency of the refractive index modulation can be improved and a low-voltage operation is possible.Type: ApplicationFiled: April 17, 2009Publication date: October 22, 2009Inventors: Kazuhiko Hosomi, Toshiki Sugawara, Yasunobu Matsuoka, Hideo Arimoto, Shinichi Saito
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Patent number: 7605402Abstract: A chip carrier includes a metal-coated portion formed on a front surface of a substrate and to be mounted a device, and a rear surface of the substrate being coated with a metal, in which a metal-coated portion is formed on a side surface of the substrate and the metal-coated portion on the front surface of substrate is connected with the metal-coated portion on the rear surface by the metal-coated portion formed on the side surface of the substrate, thereby maintaining frequency characteristics of the optical semiconductor device.Type: GrantFiled: November 18, 2005Date of Patent: October 20, 2009Assignee: OpNext Japan, Inc.Inventors: Noriko Sasada, Kazuhiko Naoe, Masataka Shirai, Hideo Arimoto, Satoshi Tada
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Publication number: 20090090925Abstract: There are a silicon laser device having a IV-group semiconductor such as silicon or germanium equivalent to the silicon as a basic constituent element on a substrate made of the silicon, and the like by a method capable of easily forming the silicon laser device by using a general silicon process, and a manufacturing method thereof.Type: ApplicationFiled: October 3, 2008Publication date: April 9, 2009Inventors: Shinichi Saito, Masahiro Aoki, Hiroyuki Uchiyama, Hideo Arimoto, Noriyuki Sakuma, Jiro Yamamoto
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Patent number: 7502403Abstract: In a horizontal cavity surface emitted laser, there is provided a device structure that is capable of obtaining a circular narrow-divergence emitted beam that is high in the optical coupling efficiency with a fiber. As a first means, there is provided a horizontal cavity surface emitting laser having a structure in which the plane mirror that is inclined by 45° and the bottom lens of the oval configuration are integrally structured. As a second means, there is provided a horizontal cavity surface emitting laser in which the mirror having the columnar front surface configuration inclined by 45° and the bottom lens of the columnar front surface configuration are integrally structured. Since the horizontal component and the vertical component of the laser beam can be shaped, independently, through the above means. As a result, it is possible to obtain the circular narrow-divergence emitted beam.Type: GrantFiled: August 1, 2007Date of Patent: March 10, 2009Assignee: Opnext Japan, Inc.Inventors: Kazunori Shinoda, Koichiro Adachi, Hideo Arimoto
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Publication number: 20080291957Abstract: Included are: a gain chip having a gain unit and a phase control region; a current supply for causing a positive current to flow to the phase control region; a voltage supply for applying a bias voltage to the phase control region; and a control unit for selectively driving the current supply or the voltage supply depending on a direction of the wavelength shift. The control unit drives the current supply when a laser wavelength is to be shifted to a shorter wavelength side from a wavelength with the current supply and the voltage supply being turned off, and drives the voltage supply when the laser wavelength is to be shifted to a longer wavelength side from a wavelength with the current supply and the voltage supply being turned off.Type: ApplicationFiled: August 3, 2007Publication date: November 27, 2008Inventors: Hideo ARIMOTO, Kzuhiro ITO, Hiroyasu SASAKI
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Patent number: 7457339Abstract: Arrayed DBR (Distributed Bragg Reflector) laser shows a problem that spectrum purity is deteriorated when a current is flowed in a semiconductor optical amplifier for attaining a sufficient optical output. In addition, the arrayed waveguide grating laser shows a problem that the spectrum purity is deteriorated by leakage of light. An output end of each of the laser channels is provided with a gate (a core) that can be controlled through bias application. The gate has a function for amplifying light when the laser channels are operated and for absorbing light when the laser channels are not operated.Type: GrantFiled: March 2, 2005Date of Patent: November 25, 2008Assignee: Hitachi, Ltd.Inventor: Hideo Arimoto
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Publication number: 20080266638Abstract: In a horizontal cavity surface emitted laser, there is provided a device structure that is capable of obtaining a circular narrow-divergence emitted beam that is high in the optical coupling efficiency with a fiber. As a first means, there is provided a horizontal cavity surface emitting laser having a structure in which the plane mirror that is inclined by 45° and the bottom lens of the oval configuration are integrally structured. As a second means, there is provided a horizontal cavity surface emitting laser in which the mirror having the columnar front surface configuration inclined by 45° and the bottom lens of the columnar front surface configuration are integrally structured. Since the horizontal component and the vertical component of the laser beam can be shaped, independently, through the above means. As a result, it is possible to obtain the circular narrow-divergence emitted beam.Type: ApplicationFiled: August 1, 2007Publication date: October 30, 2008Inventors: Kazunori Shinoda, Koichiro Adachi, Hideo Arimoto
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Publication number: 20080198888Abstract: A method of bonding a compound semiconductor on a silicon waveguide is used for attaining a laser above a silicon substrate. While it is essential to attain laser oscillation by injection of a current, since amorphous is formed at the bonding surface of a silicon compound semiconductor, it is difficult to directly inject the current through the silicon waveguide to the compound semiconductor. Further, even when an electrode is formed near the waveguide and the current is injected, since the current is not injected near the silicon waveguide, laser oscillation through the silicon waveguide can not be attained. The problem is solved by forming a structure of laterally injecting a current to the silicon waveguide and concentrating the current near the silicon waveguide in a compound semiconductor.Type: ApplicationFiled: December 20, 2007Publication date: August 21, 2008Inventor: Hideo Arimoto
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Publication number: 20080137695Abstract: A core of an optical waveguide and a core of a waveguide type optical device are adjacently disposed, and a layer is continuously formed at one end of the core of the waveguide type optical device, wherein an effective refractive index of the layer decreases toward a long axis direction of the optical waveguide stripe.Type: ApplicationFiled: December 5, 2007Publication date: June 12, 2008Inventors: Makoto Takahashi, Hideo Arimoto, Kazuhiko Hosomi, Toshihiko Fukamachi, Shigeki Makino, Yasunobu Matsuoka, Toshiki Sugawara