Patents by Inventor Hideo Eto
Hideo Eto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11482443Abstract: A bonding apparatus according to the present embodiment includes a first holder and a second holder. The first holder holds a first substrate. The second holder sucks a second substrate, opposes the second substrate to the first substrate, and bonds the second substrate to the first substrate. A first ring stage is provided on an outer circumference of the first holder and allows a first ring member provided on an outer edge of the first substrate to be mounted thereon. A second ring stage is provided on an outer circumference of the second holder and allows a second ring member provided on an outer edge of the second substrate to be mounted thereon. A first heater is provided in the first ring stage. A second heater is provided in the second ring stage.Type: GrantFiled: September 2, 2020Date of Patent: October 25, 2022Assignee: Kioxia CorporationInventor: Hideo Eto
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Publication number: 20210287926Abstract: A bonding apparatus according to the present embodiment includes a first holder and a second holder. The first holder holds a first substrate. The second holder sucks a second substrate, opposes the second substrate to the first substrate, and bonds the second substrate to the first substrate. A first ring stage is provided on an outer circumference of the first holder and allows a first ring member provided on an outer edge of the first substrate to be mounted thereon. A second ring stage is provided on an outer circumference of the second holder and allows a second ring member provided on an outer edge of the second substrate to be mounted thereon. A first heater is provided in the first ring stage. A second heater is provided in the second ring stage.Type: ApplicationFiled: September 2, 2020Publication date: September 16, 2021Applicant: Kioxia CorporationInventor: Hideo ETO
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Patent number: 11094574Abstract: According to one embodiment, a substrate supporting device is a substrate supporting device that supports a substrate in a processing container of a plasma processing apparatus, the substrate supporting device including an electrostatic chuck including a placing plate containing at least a ceramic and having the substrate electrostatically attracted by the placing plate, a lift pin configured to be storable inside the electrostatic chuck and which delivers the substrate to and from the electrostatic chuck, and a cover containing at least a ceramic of a same type as the placing plate and configured to be attachable to and detachable from the lift pin.Type: GrantFiled: January 9, 2019Date of Patent: August 17, 2021Assignee: TOSHIBA MEMORY CORPORATIONInventor: Hideo Eto
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Patent number: 10818535Abstract: According to one embodiment, a plasma processing-apparatus processing object support platform includes a lower plate, an upper plate, and a variable condenser. The lower plate is electrically conductive. The upper plate is provided on the lower plate. A processing object is placed on an upper surface of the upper plate. The variable condenser is provided along a circumferential direction of the lower plate in a region at an upper outer circumferential vicinity of the lower plate. The region has an annular configuration. The variable condenser includes a first capacitance element and a second capacitance element disposed respectively on an inner circumferential side and an outer circumferential side in the region having the annular configuration. Mutually-different control voltages are suppliable to the first capacitance element and the second capacitance element.Type: GrantFiled: November 29, 2018Date of Patent: October 27, 2020Assignee: Toshiba Memory CorporationInventor: Hideo Eto
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Publication number: 20200035536Abstract: According to one embodiment, a substrate supporting device is a substrate supporting device that supports a substrate in a processing container of a plasma processing apparatus, the substrate supporting device including an electrostatic chuck including a placing plate containing at least a ceramic and having the substrate electrostatically attracted by the placing plate, a lift pin configured to be storable inside the electrostatic chuck and which delivers the substrate to and from the electrostatic chuck, and a cover containing at least a ceramic of a same type as the placing plate and configured to be attachable to and detachable from the lift pin.Type: ApplicationFiled: January 9, 2019Publication date: January 30, 2020Applicant: TOSHIBA MEMORY CORPORATIONInventor: Hideo ETO
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Patent number: 10280121Abstract: A silicon carbide member for a plasma processing apparatus is obtained by mixing an ?-silicon carbide powder having an average particle size of 0.3 to 3 ?m, with an amount of metal impurities in the ?-silicon carbide powder reduced to 20 ppm or less, and a sintering aid comprising B4C in amount of 0.5 to 5 weight parts or Al2O3 and Y2O3 in total amount of 3 to 15 weight parts; sintering a mixture of the ?-silicon carbide powder and the sintering aid in an argon atmosphere furnace or a high-frequency dielectric heating furnace; and then processing the resulting sintered body. The resulting silicon carbide member for a plasma processing apparatus is low cost and durable.Type: GrantFiled: March 30, 2016Date of Patent: May 7, 2019Assignee: HOKURIKU SEIKEI INDUSTRIAL CO., LTD.Inventors: Masahiro Okesaku, Michito Miyahara, Hideo Eto, Yukio Okudo, Makoto Saito, Hiroshi Sanda
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Publication number: 20190096731Abstract: According to one embodiment, a plasma processing-apparatus processing object support platform includes a lower plate, an upper plate, and a variable condenser. The lower plate is electrically conductive. The upper plate is provided on the lower plate. A processing object is placed on an upper surface of the upper plate. The variable condenser is provided along a circumferential direction of the lower plate in a region at an upper outer circumferential vicinity of the lower plate. The region has an annular configuration. The variable condenser includes a first capacitance element and a second capacitance element disposed respectively on an inner circumferential side and an outer circumferential side in the region having the annular configuration. Mutually-different control voltages are suppliable to the first capacitance element and the second capacitance element.Type: ApplicationFiled: November 29, 2018Publication date: March 28, 2019Applicant: Toshiba Memory CorporationInventor: Hideo ETO
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Patent number: 10115615Abstract: According to one embodiment, there is provided a substrate processing apparatus including a processing unit and a manipulator. The processing unit processes a substrate. The manipulator is for maintenance. The manipulator is placed near the processing unit.Type: GrantFiled: July 26, 2016Date of Patent: October 30, 2018Assignee: TOSHIBA MEMORY CORPORATIONInventor: Hideo Eto
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Publication number: 20180261481Abstract: According to one embodiment, a sensing system includes a waveguide, an optical system, and a detector. The waveguide is configured to guide light in a wafer. The optical system is configured to cause the light guided by the waveguide to go out from a back side of the wafer. The detector is configured to detect a state inside or outside the wafer based on a detection result about the light caused to go out by the optical system.Type: ApplicationFiled: September 14, 2017Publication date: September 13, 2018Applicant: Toshiba Memory CorporationInventor: Hideo ETO
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Publication number: 20180072629Abstract: A silicon carbide member for a plasma processing apparatus is obtained by mixing an ?-silicon carbide powder having an average particle size of 0.3 to 3 ?m, with an amount of metal impurities in the ?-silicon carbide powder reduced to 20 ppm or less, and a sintering aid comprising B4C in amount of 0.5 to 5 weight parts or Al2O3 and Y2O3 in total amount of 3 to 15 weight parts; sintering a mixture of the ?-silicon carbide powder and the sintering aid in an argon atmosphere furnace or a high-frequency dielectric heating furnace; and then processing the resulting sintered body. The resulting silicon carbide member for a plasma processing apparatus is low cost and durable.Type: ApplicationFiled: March 30, 2016Publication date: March 15, 2018Applicant: HOKURIKU SEIKEI INDUSTRIAL CO., LTD.Inventors: Masahiro OKESAKU, Michito MIYAHARA, Hideo ETO, Yukio OKUDO, Makoto SAITO, Hiroshi SANDA
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Publication number: 20180012784Abstract: According to one embodiment, a plasma processing-apparatus processing object support platform includes a lower plate, an upper plate, and a variable condenser. The lower plate is electrically conductive. The upper plate is provided on the lower plate. A processing object is placed on an upper surface of the upper plate. The variable condenser is provided along a circumferential direction of the lower plate in a region at an upper outer circumferential vicinity of the lower plate. The region has an annular configuration. The variable condenser includes a first capacitance element and a second capacitance element disposed respectively on an inner circumferential side and an outer circumferential side in the region having the annular configuration. Mutually-different control voltages are suppliable to the first capacitance element and the second capacitance element.Type: ApplicationFiled: September 7, 2016Publication date: January 11, 2018Applicant: Toshiba Memory CorporationInventor: Hideo ETO
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Publication number: 20170263477Abstract: According to one embodiment, there is provided a substrate processing apparatus including a processing unit and a manipulator. The processing unit processes a substrate. The manipulator is for maintenance. The manipulator is placed near the processing unit.Type: ApplicationFiled: July 26, 2016Publication date: September 14, 2017Applicant: Kabushiki Kaisha ToshibaInventor: Hideo ETO
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Publication number: 20160284522Abstract: According to one embodiment, an upper electrode to be arranged opposite to a lower electrode and serving as a shower head in a plasma processing apparatus of a parallel-plate type is provided. The upper electrode includes a concave portion provided on an outer peripheral side of a processing object opposing region configured to face a mounting region for a processing object to be placed on the lower electrode.Type: ApplicationFiled: July 16, 2015Publication date: September 29, 2016Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hideo ETO, Masanori Abe, Makoto Saito
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Patent number: 9370920Abstract: According to one embodiment, an electrostatic chuck comprises a mount plate, a first layer, and a second layer. The first layer includes a heater. The second layer is provided between the mount plate and the first layer. The second layer transmits heat from the heater to the mount plate. The second layer includes a compressive attachment portion. The compressive attachment portion is formed at the outer edge. The face on the mount plate side of the compressive attachment portion is compressed and attached to the mount plate. The face on the first layer side of the compressive attachment portion is compressed and attached to the first layer.Type: GrantFiled: March 6, 2014Date of Patent: June 21, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Hideo Eto, Yasuhiro Nojiri, Makoto Saito
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Patent number: 9248635Abstract: According to one embodiment, an electrostatic chuck comprises a mount plate, a first layer, and a second layer. The first layer includes a heater. The second layer is provided between the mount plate and the first layer. The second layer transmits heat from the heater to the mount plate. The second layer includes a compressive attachment portion. The compressive attachment portion is formed at the outer edge. The face on the mount plate side of the compressive attachment portion is compressed and attached to the mount plate. The face on the first layer side of the compressive attachment portion is compressed and attached to the first layer.Type: GrantFiled: March 6, 2014Date of Patent: February 2, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Hideo Eto, Yasuhiro Nojiri, Makoto Saito
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Patent number: 9236229Abstract: According to one embodiment, a gas supply member is provided with a gas supply passage including a gas flow channel with a first diameter, and an exhaust port connected to one end portion of the gas flow channel and provided to a surface of a downstream side of the gas supply member. An yttria-containing film is formed on a surface constituting the exhaust port and the surface of the downstream side of the gas supply member. At least a part of the surface constituting the exhaust port is formed with a curved surface.Type: GrantFiled: July 29, 2011Date of Patent: January 12, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Hideo Eto, Rikyu Ikariyama, Makoto Saito, Sachiyo Ito
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Patent number: 9111969Abstract: Provided is a seal member according to embodiments. The seal member is disposed between an upper electrode and a backing plate in an etching apparatus to seal a gap between the upper electrode and the backing plate. In addition, the seal member is configured to include a high heat conductivity member having a heat conductivity higher than that of a first member formed by using siloxane bond and a low resistance member having a resistivity lower than that of the first member.Type: GrantFiled: February 7, 2013Date of Patent: August 18, 2015Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Hideo Eto, Makoto Saito
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Publication number: 20150143146Abstract: According to one embodiment, there is provided a substrate processing apparatus including a substrate processing unit, a power supply, and a control unit. The substrate processing unit is configured to conduct processing on a substrate successively under first and second processing conditions each including a plurality of kinds of processing parameters to process the substrate. The power supply is capable of supplying power, which is one of the processing parameters included in each of the first and second processing conditions, to process the substrate. The control unit is configured to, during a period over which power supplied from the power supply is kept at a first level corresponding to the first processing condition, start a preparation operation to change over other processing parameters different from the power, from a level corresponding to the first processing condition to a level corresponding to the second processing condition.Type: ApplicationFiled: September 3, 2014Publication date: May 21, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Hideo ETO, Makoto SAITO
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Publication number: 20150043122Abstract: According to one embodiment, an electrostatic chuck comprises a mount plate, a first layer, and a second layer. The first layer includes a heater. The second layer is provided between the mount plate and the first layer. The second layer transmits heat from the heater to the mount plate. The second layer includes a compressive attachment portion. The compressive attachment portion is formed at the outer edge. The face on the mount plate side of the compressive attachment portion is compressed and attached to the mount plate. The face on the first layer side of the compressive attachment portion is compressed and attached to the first layer.Type: ApplicationFiled: March 6, 2014Publication date: February 12, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Hideo ETO, Yasuhiro Nojiri, Makoto Saito
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Patent number: 8833388Abstract: According to one embodiment, there is provided pressure controlling apparatus including a detecting unit, an exhaust pipe, a regulating valve, and a pressure controlling unit. The regulating valve includes a valve port, a changing unit, and a slide valve. The valve port is communicated with the exhaust pipe. The changing unit changes a shape of the valve port to a different shape whose center is located near the central axis of the exhaust pipe. The slide valve regulates an opening degree of the valve port changed by the changing unit. The pressure controlling unit controls changing of a shape of the valve port by the changing unit and regulation of an opening degree of the valve port by the slide valve.Type: GrantFiled: March 9, 2012Date of Patent: September 16, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Hideo Eto, Makoto Saito, Nobuyasu Nishiyama