Patents by Inventor Hideo Hosono

Hideo Hosono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150239747
    Abstract: If a conductive mayenite compound having a large specific surface area is obtained, the usefulness thereof in respective applications is remarkably increased. A conductive mayenite compound powder having a conduction electron density of 1015 cm?3 or more and a specific surface area of 5 m2g?1 or more is produced by: (1) a step for forming a precursor powder by subjecting a mixture of a starting material powder and water to a hydrothermal treatment; (2) a step for forming a mayenite compound powder by heating and dehydrating the precursor powder; (3) a step for forming an activated mayenite compound powder by heating the compound powder in an inert gas atmosphere or in a vacuum; and (4) a step for injecting electrons into the mayenite compound through a reduction treatment by mixing the activated mayenite compound powder with a reducing agent.
    Type: Application
    Filed: August 20, 2013
    Publication date: August 27, 2015
    Applicant: TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Michikazu Hara, Yasunori Inoue, Masaaki Kitano, Fumitaka Hayashi, Toshiharu Yokoyama, Satoru Matsuishi, Yoshitake Toda
  • Publication number: 20150217278
    Abstract: A metal-supporting catalyst for decomposing ammonia into hydrogen and nitrogen. The catalyst shows a high performance with a low cost and being advantageous from the viewpoint of resources, and an efficient method for producing hydrogen using the catalyst. The catalyst catalytically decomposes ammonia gas to generate hydrogen. The hydrogen generation catalyst includes, as a support, a mayenite type compound having oxygen ions enclosed therein or a mayenite type compound having 1015 cm?3 or more of conduction electrons or hydrogen anions enclosed therein, and metal grains for decomposing ammonia are supported on the surface of the support. Hydrogen is produced by continuously supplying 0.1-100 vol % of ammonia gas to a catalyst layer that comprises the aforesaid catalyst, and reacting the same at a reaction pressure of 0.01-1.0 MPa, at a reaction temperature of 300-800° C. and at a weight hourly space velocity (WHSV) of 500/mlg?1h?1 or higher.
    Type: Application
    Filed: August 20, 2013
    Publication date: August 6, 2015
    Applicant: TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Fumitaka Hayashi, Toshiharu Yokoyama, Yoshitake Toda, Michikazu Hara, Masaaki Kitano
  • Patent number: 9076925
    Abstract: A thermoelectric material includes a semiconductor substrate, a semiconductor oxide film formed on the substrate, and a thermoelectric layer provided on the oxide film. The semiconductor oxide film has a first nano-opening formed therein. The thermoelectric layer has such a configuration that semiconductor nanodots are piled up on or above the first nano-opening so as to form a particle packed structure. At least some of the nanodots each have a second nano-opening formed in its surface, and are connected to each other through the second nano-opening with their crystal orientation aligned. The thermoelectric material is produced through steps of oxidizing the substrate to form the semiconductor oxide film thereon, forming the first nano-opening in the oxide film, and epitaxially growing to pile up the plurality of nanodots on the first nano-opening. As a result, it is possible to provide the thermoelectric material superior in thermoelectric conversion performance.
    Type: Grant
    Filed: May 15, 2013
    Date of Patent: July 7, 2015
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Yoshiaki Nakamura, Masayuki Isogawa, Tomohiro Ueda, Jun Kikkawa, Akira Sakai, Hideo Hosono
  • Patent number: 9048380
    Abstract: A thermoelectric conversion material having a novel composition is provided. The thermoelectric conversion material comprises a first dielectric material layer, a second dielectric material layer, and an electron localization layer that is present between the first dielectric material layer and the second dielectric material layer and that has a thickness of 1 nm.
    Type: Grant
    Filed: November 15, 2005
    Date of Patent: June 2, 2015
    Assignees: Japan Science and Technology Agency, National University Corporation Nagoya University
    Inventors: Hideo Hosono, Masahiro Hirano, Hiromichi Ohta, Kunihito Koumoto
  • Publication number: 20150137103
    Abstract: A light emitting device including an organic electroluminescence element is provided. The light emitting device may be a display device or a lighting device. The organic electroluminescence element includes an anode, a light emitting layer, and a cathode that are arranged in this order. An electron injection layer is arranged between the light emitting layer and the cathode. The electron injection layer is made of an amorphous C12A7 electride.
    Type: Application
    Filed: December 11, 2014
    Publication date: May 21, 2015
    Applicants: TOKYO INSTITUTE OF TECHNOLOGY, ASAHI GLASS COMPANY, LIMITED
    Inventors: Hideo Hosono, Yoshitake TODA, Setsuro ITO, Satoru WATANABE, Naomichi MIYAKAWA, Kazuhiro ITO, Toshinari WATANABE
  • Publication number: 20150093583
    Abstract: A C12A7 electride thin film fabrication method includes a step of forming an amorphous C12A7 electride thin film on a substrate by vapor deposition under an atmosphere with an oxygen partial pressure of less than 0.1 Pa using a target made of a crystalline C12A7 electride having an electron density within a range of 2.0×1018 cm?3 to 2.3×1021 cm?3.
    Type: Application
    Filed: December 11, 2014
    Publication date: April 2, 2015
    Applicants: TOKYO INSTITUTE OF TECHNOLOGY, ASAHI GLASS COMPANY, LIMITED
    Inventors: Hideo HOSONO, Yoshitake TODA, Katsuro HAYASHI, Setsuro ITO, Satoru WATANABE, Naomichi MIYAKAWA, Toshinari WATANABE, Kazuhiro ITO
  • Publication number: 20140349854
    Abstract: Provided is an iron-based superconducting material including an iron-based superconductor having a crystal structure of ThCr2Si2, and nanoparticles which are expressed by BaXO3 (X represents one, two, or more kinds of elements selected from a group consisting of Zr, Sn, Hf, and Ti) and have a particle size of 30 nm or less. The nanoparticles are dispersed in a volume density of 1×1021m?3 or more.
    Type: Application
    Filed: February 28, 2014
    Publication date: November 27, 2014
    Applicant: International Superconductivity Technology Center
    Inventors: Masashi Miura, Seiji Adachi, Keiichi Tanabe, Hideo Hosono
  • Publication number: 20140299172
    Abstract: A thermoelectric material includes a semiconductor substrate, a semiconductor oxide film formed on the substrate, and a thermoelectric layer provided on the oxide film. The semiconductor oxide film has a first nano-opening formed therein. The thermoelectric layer has such a configuration that semiconductor nanodots are piled up on or above the first nano-opening so as to form a particle packed structure. At least some of the nanodots each have a second nano-opening formed in its surface, and are connected to each other through the second nano-opening with their crystal orientation aligned. The thermoelectric material is produced through steps of oxidizing the substrate to form the semiconductor oxide film thereon, forming the first nano-opening in the oxide film, and epitaxially growing to pile up the plurality of nanodots on the first nano-opening. As a result, it is possible to provide the thermoelectric material superior in thermoelectric conversion performance.
    Type: Application
    Filed: May 15, 2013
    Publication date: October 9, 2014
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Yoshiaki Nakamura, Masayuki Isogawa, Tomohiro Ueda, Jun Kikkawa, Akira Sakai, Hideo Hosono
  • Publication number: 20140230724
    Abstract: A method for depositing a magnesium oxide thin film on a substrate by a laser abrasion method using a sintered body or single crystal of magnesium oxide as a target. In this method, a flat processed film made of magnesium oxide having a (111) plane as its front surface is prepared, using a substrate made of strontium titanate having a (111) plane as its principal surface or yttria-stabilized zirconia having a (111) plane as its principal surface, by directly depositing a film on the principal surface of the substrate and epitaxially growing the film.
    Type: Application
    Filed: March 9, 2012
    Publication date: August 21, 2014
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Tomofumi Susaki, Hideo Hosono, Tadahiro Fujihashi, Yoshitake Toda
  • Patent number: 8742393
    Abstract: The SrTiO3 buffer layer is formed by lamination of the Sr2+O2? layer and the Ti4+O24? layer. The surface of the buffer layer is terminated with the Ti4+O24? layer. On the buffer layer, a LaAlO3 thin film layer is formed. The thin film layer includes a La3+O2? layer and an Al3+O24? layer alternately laminated in order on the SrTiO3 buffer layer.
    Type: Grant
    Filed: March 8, 2012
    Date of Patent: June 3, 2014
    Assignee: Tokyo Institute of Technology
    Inventors: Tomofumi Susaki, Hideo Hosono
  • Publication number: 20140128252
    Abstract: [Problem] Many oxide-ion conductors exhibit high functionality at high temperatures due to the large weight and charge of oxide ions, and it has been difficult to achieve the functionality at low temperatures. [Solution] A perovskite oxide having hydride ion conductivity, at least 1 at % of the oxide ions (O2?) contained in a titanium-containing perovskite oxide being substituted with hydride ions (H?). This oxide, in which negatively charged hydride ions (H?) are used for the ionic conduction, has both hydride ion conductivity and electron conductivity. As a starting material, the titanium-containing perovskite oxide is kept together with a powder of an alkali metal or alkaline-earth metal hydride selected from LiH, CaH2, SrH2, and BaH2 in a temperature range of 300° C. or higher and lower than the melting point of the hydride in a vacuum or an inert gas atmosphere to substitute some of the oxide ions in the oxide with the hydride ions, resulting in the introduction of the hydride ions into oxygen sites.
    Type: Application
    Filed: July 5, 2012
    Publication date: May 8, 2014
    Applicants: KYOTO UNIVERSITY, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Hiroshi Kageyama, Yoji Kobayashi, Mikio Takano, Takeshi Yajima
  • Publication number: 20130277672
    Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
    Type: Application
    Filed: June 20, 2013
    Publication date: October 24, 2013
    Inventors: MASAFUMI SANO, KATSUMI NAKAGAWA, HIDEO HOSONO, TOSHIO KAMIYA, KENJI NOMURA
  • Publication number: 20130183224
    Abstract: The present invention provides a catalyst substance that is stable and performs well in the synthesis of ammonia, one of the most important chemical substances for fertilizer ingredients and the like. The catalyst substance exhibits catalytic activity under mild synthesis conditions not requiring high pressure, and is also advantageous from a resource perspective. Further provided is a method for producing the same. This catalyst comprises a supported metal catalyst that is supported on a mayenite type compound including conduction electrons of 1015 cm?3 or more and serving as a support for the ammonia synthesis catalyst. The mayenite type compound used as the support may take any form, including that of powder, a porous material, a sintered body, a thin-film, or a single crystal. Use of this catalyst makes it possible to increase the electron donating ability toward a transition metal.
    Type: Application
    Filed: December 6, 2011
    Publication date: July 18, 2013
    Applicant: TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Michikazu Hara, Masaaki Kitano, Sung Wng Kim, Satoru Matsuishi, Yoshitake Toda, Toshiharu Yokoyama, Fumitaka Hayashi
  • Patent number: 8435473
    Abstract: Disclosed is a superconducting compound which has a structure obtained by partially substituting oxygen ions of a compound, which is represented by the following chemical formula; LnTMOPh [wherein Ln represents at least one element selected from Y and rare earth metal elements (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu), TM represents at least one element selected from transition metal elements (Fe, Ru, Os, Ni, Pd and Pt), and Pn represents at least one element selected from pnictide elements (N, P, As and Sb)] and has a ZrCuSiAs-type crystal structure (space group P4/nmm), with at least one kind of monovalent anion (F?, Cl? or Br?). The superconducting compound alternatively has a structure obtained by partially substituting Ln ions of the compound with at least one kind of tetravalent metal ion (Ti4+, Zr4+, Hf4+, C4+, Si4+, Ge4+, Sn4+ or Pb4+) or a structure obtained by partially substituting Ln ions of the compound with at least one kind of divalent metal ion (Mg2+, Ca2+, Sr2+ or Ba2+).
    Type: Grant
    Filed: February 17, 2009
    Date of Patent: May 7, 2013
    Assignee: Japan Science and Technology Agency
    Inventors: Hideo Hosono, Yoichi Kamihara, Masahiro Hirano, Toshio Kamiya, Hiroshi Yanagi
  • Patent number: 8420236
    Abstract: A magnetic semiconductor material contains at least one type of transition metals (Mn2+, Fe3+, Ru3+, Re2+, and Os3+) having five electrons in the d atomic orbital as a magnetic ion, in which the magnetic semiconductor material exhibits n-type electrical conduction by injection of an electron carrier and p-type electric conduction by injection of a hole carrier. A specific example is a layered oxy-pnictide compound represented by LnMnOPn (wherein Ln is at least one type selected from Y and rare earth elements of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and Pn is at least one selected from pnicogen elements of N, P, As, Bi, and Sb). A high-sensitivity magnetic sensor, current sensor, or memory device can be made by using a magnetic pn homojunction structure made of thin films composed of the magnetic semiconductor material.
    Type: Grant
    Filed: August 1, 2006
    Date of Patent: April 16, 2013
    Assignee: Japan Science and Technology Agency
    Inventors: Hideo Hosono, Masahiro Hirano, Hidenori Hiramatsu, Toshio Kamiya, Hiroshi Yanagi, Eiji Motomitsu
  • Publication number: 20130032778
    Abstract: The SrTiO3 buffer layer is formed by lamination of the Sr2+O2? layer and the Ti4+O24? layer. The surface of the buffer layer is terminated with the Ti4+O24? layer. On the buffer layer, a LaAlO3 thin film layer is formed. The thin film layer includes a La3+O2? layer and an Al3+O24? layer alternately laminated in order on the SrTiO3 buffer layer.
    Type: Application
    Filed: March 8, 2012
    Publication date: February 7, 2013
    Applicant: TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Tomofumi SUSAKI, Hideo HOSONO
  • Patent number: 8288321
    Abstract: Provides a new non-oxide system compound material superconductor as an alternative of the perovskite type copper oxides superconductor. Layered compounds which are represented by chemical formula AF(TM)Pn (wherein, A is at least one selected from a group consisting of the second family elements in the long form periodic table, F is a fluorine ion, TM is at least one selected from a group of transition metal elements consisting of Fe, Ru, Os, Ni, Pd, and Pt, and Pn is at least one selected from a group consisting of the fifteenth family elements in the long form periodic table), having a crystal structure of ZrCuSiAs type (space group P4/nmm) and which become superconductors by doping trivalent cations or divalent anions.
    Type: Grant
    Filed: July 9, 2009
    Date of Patent: October 16, 2012
    Assignee: Japan Science and Technology Agency
    Inventors: Hideo Hosono, Hiroshi Yanagi, Toshio Kamiya, Satoru Matsuishi, Sungwng Kim, Seok Gyu Yoon, Hidenori Hiramatsu, Masahiro Hirano, Takatoshi Nomura, Yoichi Kamihara
  • Patent number: 8237166
    Abstract: An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous.
    Type: Grant
    Filed: August 2, 2010
    Date of Patent: August 7, 2012
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology
    Inventors: Hideya Kumomi, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Patent number: 8212252
    Abstract: An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.
    Type: Grant
    Filed: September 15, 2010
    Date of Patent: July 3, 2012
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology
    Inventors: Tohru Den, Tatsuya Iwasaki, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Patent number: 8203146
    Abstract: Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.
    Type: Grant
    Filed: September 15, 2010
    Date of Patent: June 19, 2012
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology
    Inventors: Katsumi Abe, Hideo Hosono, Toshio Kamiya, Kenji Nomura