Abstract: The present invention provides a washing method for a device substrate, capable of sufficiently removing a resist attached to a device substrate, particularly a resist attached to fine pore portions of a pattern having a large aspect ratio. A method for washing a device substrate, which comprises a washing step of removing a resist attached to a device substrate by means of a solvent, wherein the solvent is a composition comprising at least one fluorinated compound selected from the group consisting of a hydrofluoroether, a hydrofluorocarbon and a perfluorocarbon, and a fluorinated alcohol.

Abstract: Disclosed is a supercritical processing apparatus and a supercritical processing method for suppressing the pattern collapse or the injection of material constituting a processing liquid into a substrate. A processing chamber receives a substrate subjected to a processing with supercritical fluid, and a liquid supply unit supplies a processing liquid including a fluorine compound to the processing chamber. A liquid discharge unit discharges the supercritical fluid from the processing chamber, a pyrolysis ingredient removing unit removes an ingredient facilitating the pyrolysis of a liquid from the processing chamber or from the liquid supplied from the liquid supply unit, and a to heating unit heats the processing liquid including a fluorine compound of hydrofluoro ether or hydrofluoro carbon.

Abstract: The present invention provides a washing method for a device substrate, capable of sufficiently removing a resist attached to a device substrate, particularly a resist attached to fine pore portions of a pattern having a large aspect ratio. A method for washing a device substrate, which comprises a washing step of removing a resist attached to a device substrate by means of a solvent, wherein the solvent is a composition comprising at least one fluorinated compound selected from the group consisting of a hydrofluoroether, a hydrofluorocarbon and a perfluorocarbon, and a fluorinated alcohol.

Abstract: The present invention provides a washing method for a device substrate, capable of sufficiently removing a resist attached to a device substrate, particularly a resist attached to fine pore portions of a pattern having a large aspect ratio. A method for washing a device substrate, which comprises a washing step of removing a resist attached to a device substrate by means of a solvent, wherein the solvent is a composition comprising at least one fluorinated compound selected from the group consisting of a hydrofluoroether, a hydrofluorocarbon and a perfluorocarbon, and a fluorinated alcohol.

Abstract: A fine and high-accuracy pattern, which is also excellent in either or both of high sensitivity and etching resistance can be provided. Disclosed is a resist pattern forming method in which a single- or multi-layered film 2 is formed on a substrate 1 and a resist pattern is formed on the film 2 through a lithography technique including exposure and development, the method comprising performing supercritical processing in which the film 2 is brought into contact with a supercritical processing solution 5? in which an organic matter 4 is dissolved before the exposure or development.

Abstract: Disclosed is a supercritical processing apparatus and a supercritical processing method for suppressing the pattern collapse or the injection of material constituting a processing liquid into a substrate. A processing chamber receives a substrate subjected to a processing with supercritical fluid, and a liquid supply unit supplies a processing liquid including a fluorine compound to the processing chamber. A liquid discharge unit discharges the supercritical fluid from the processing chamber, a pyrolysis ingredient removing unit removes an ingredient facilitating the pyrolysis of a liquid from the processing chamber or from the liquid supplied from the liquid supply unit, and a to heating unit heats the processing liquid including a fluorine compound of hydrofluoro ether or hydrofluoro carbon.

Abstract: A fine and high-accuracy resist pattern, which is excellent in etching resistance, can be formed. Disclosed is a resist pattern forming method, which includes the steps of developing a resist composition having photosensitivity to a predetermined light source through a lithography technique to form a resist pattern 2 on a substrate 1, and bringing the resist pattern 2 into contact with a supercritical processing solution 5? including a supercritical fluid 3? which contains a crosslinking agent 4.

Abstract: To provide a cleaning method capable of favorably removing an object to be cleaned having a plasma polymer formed in a plasma etching step employing a fluorinated gas. A cleaning method comprising an immersion step of immersing an object 1 to be cleaned in a cleaning liquid (fluorinated solvent) 3 containing at least a fluorine compound, wherein in the immersion step, the temperature t of the cleaning liquid 3 is at least the lower one of the normal boiling point of the fluorine compound contained in the cleaning liquid 3 at 1 atm and 100° C., and the atmospheric pressure is such a pressure that the fluorine compound is in a liquid state at the temperature t.

Abstract: The present invention provides a washing method for a device substrate, capable of sufficiently removing a resist attached to a device substrate, particularly a resist attached to fine pore portions of a pattern having a large aspect ratio. A method for washing a device substrate, which comprises a washing step of removing a resist attached to a device substrate by means of a solvent, wherein the solvent is a composition comprising at least one fluorinated compound selected from the group consisting of a hydrofluoroether, a hydrofluorocarbon and a perfluorocarbon, and a fluorinated alcohol.

Abstract: A fine and high-accuracy pattern, which is also excellent in either or both of high sensitivity and etching resistance can be provided. Disclosed is a resist pattern forming method in which a single- or multi-layered film 2 is formed on a substrate 1 and a resist pattern is formed on the film 2 through a lithography technique including exposure and development, the method comprising performing supercritical processing in which the film 2 is brought into contact with a supercritical processing solution 5? in which an organic matter 4 is dissolved before or after the exposure or development.

Abstract: A fine and high-accuracy resist pattern, which is excellent in etching resistance, can be formed. Disclosed is a resist pattern forming method, which includes the steps of developing a resist composition having photosensitivity to a predetermined light source through a lithography technique to form a resist pattern 2 on a substrate 1, and bringing the resist pattern 2 into contact with a supercritical processing solution 5? including a supercritical fluid 3? which contains a crosslinking agent 4.

Abstract: According to a supercritical drying method of this invention, a substrate having a pattern is dipped in water and rinsed with water. Then, the substrate is placed in the reaction chamber of a predetermined sealable vessel, and surfactant-added liquid carbon dioxide is introduced into the reaction chamber. The substrate is dipped in surfactant-added liquid carbon dioxide, and liquid carbon dioxide is changed to the supercritical state. After that, supercritical carbon dioxide is gasified.

Abstract: In this invention, resist patterns formed by development are dried using a supercritical fluid such that no moisture enters the patterns.

Abstract: In this invention, resist patterns formed by development are dried using a supercritical fluid such that no moisture enters the patterns.

Abstract: In this invention, resist patterns formed by development are dried using a supercritical fluid such that no moisture enters the patterns.

Abstract: A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.

Abstract: A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.

Abstract: A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.

Abstract: An intermediate layer material of a three-layer resist system for use in processing of a semiconductor substrate, comprising an organopolysiloxane. The organopolysiloxane is expressed by a general formula (R.sub.3 SiO.sub.1/2).sub.m.(R.sub.2 SiO).sub.n.(RSiO.sub.3/2).sub.p.(SiO.sub.2).sub.q {where R is independently a hydrocarbon group or an alkoxy group; and m, n, p and q represent composition ratios of respective units and satisfy m+n+p+q=1, 1.gtoreq.m>0, 1.gtoreq.n.gtoreq.0, 1.gtoreq.p.gtoreq.0, 1.gtoreq.q.gtoreq.0 (where p and q are not simultaneously 0), m/p.ltoreq.0.3 (where p.noteq.0), and/or m/q.ltoreq.1 (where q.noteq.0)}.

Abstract: An intermediate layer material of a three-layer resist system for use in processing of a semiconductor substrate, comprising an organopolysiloxane. The organopolysiloxane is expressed by a general formula (R.sub.3 SiO.sub.1/2).sub.m.(R.sub.2 SiO).sub.n.(RSiO.sub.3/2).sub.p.(SiO.sub.2).sub.q {where R is independently a hydrocarbon group or an alkoxy group; and m, n, p and q represent composition ratios of respective units and satisfy m+n+p+q=1, 1.gtoreq.m>0, 1.gtoreq.n.gtoreq.0, 1.gtoreq.p.gtoreq.0, 1.gtoreq.q.gtoreq.0 (where p and q are not simultaneously 0), m/p.ltoreq.0.3 (where p.noteq.0), and/or m/q.ltoreq.1 (where q.noteq.0)}.