Abstract: A threaded joint wherein a relationship between shoulder angle parameters and thread taper angle parameters for a coupling and a pair of pins inserted from both ends of the coupling is defined by the following expression (1), and a tightening torque with which the threaded joint is tightened is 60% or more and 85% or less of a yield torque determined by the following expression (2): - 1.5 ? ° ? ? ? ? - ? ? ? ? 2. ° , ( 1 ) T = ( T S + T D ) ? 1 12 ( 2 ) T S = f t ? P c ? E 7 2 ? ( 2 ? ? ? E 7 ) ? L 4 ? 1 2 P c = E ? ? m 2 ? ( ( W 2 ) 2 - ( E 7 2 ) 2 ) ? ( ( E 7 2 ) 2 - ( d 2 ) 2 ) 2 ? ( E 7 2 ) 3 ? ( ( W 2 ) 2 - ( d 2 ) 2 ) T D = Y m ? A S ( P 2 ? ? + R t ? f s cos ? ? + R s ? f s ) .

Abstract: An image processing apparatus includes a control unit configured to control execution of monochromatic calibration and multi-color calibration, and a registration unit configured to register paper types of paper to be used at time of execution of the monochromatic calibration, a monochromatic target value set for each of the paper types used for the monochromatic calibration, paper types of paper to be used at time of execution of multi-color calibration, and a multi-color target value set for each of the paper types used for the multi-color calibration. The image processing apparatus executes the multi-color calibration, after executing the monochromatic calibration, via the control unit by using paper of a paper type selected from common paper types out of the registered paper types and the monochromatic target value and the multi-color target value set for the selected paper type.

Abstract: Provided is an electrode mixture used for an all-solid-state sodium storage battery that can maintain a high discharging capacity in a room temperature environment and exhibit excellent charge-discharge cycle characteristics. Further provided is a storage battery comprising the same. An object of the present invention is to provide an electrode mixture used for an all-solid-state sodium storage battery, the electrode mixture comprising an active material, wherein the active material is a cluster formed of polyphosphate acid transition metal oxide with a plurality of individual particles connected together, each particle having a particle size within the range of 0.1 ?m to 100 ?m.

Abstract: A communication system (1) includes a terminal information acquisition unit configured to acquire version information of an OS of a terminal (10), a comparison unit configured to compare a version of the OS of the terminal (10) acquired by the terminal information acquisition unit with a latest version of the corresponding OS, and a setting unit configured to set, when the version of the OS of the terminal (10) is not the latest version, a path along which traffic of the terminal (10) passes through a security appliance (5), and set, when the version of the OS of the terminal (10) is the latest version, a path along which the traffic of the terminal (10) does not pass through the security appliance (5).

Abstract: A control device includes a control unit configured to transmit a request received from an information processing device performing setting on a relay device relaying a packet in software defined networking (SDN) to the relay device. The control unit sequentially transmits each request from the information processing device to the relay device and sequentially transmits each response from the relay device in response to each of the requests to the information processing device when a processing load of the control device is equal to or less than a threshold, and transmits a request in which a plurality of requests from the information processing device are collected to the relay device and transmits a response in which responses to the plurality of requests are collected to the information processing device when the processing load of the control device is not equal to or less than the threshold.

Abstract: Provided are a magnetoresistance effect element and a magnetic memory having a shape magnetic anisotropy and using a recording layer having an anti-parallel coupling. A first magnetic layer (3) and a second magnetic layer (5) of the magnetoresistance effect element include a ferromagnetic substance, have a magnetization direction variable to the direction perpendicular to a film surface and are magnetically coupled in an anti-parallel direction, and a junction size D (nm), which is a length of the longest straight line on an end face perpendicular to the thickness direction of the first magnetic layer (3) and the second magnetic layer (5), a film thickness t1 (nm) of the first magnetic layer (3), and a film thickness t2 (nm) of the second magnetic layer (5) satisfy relationships D<t1 and D?t1 or D?t1 and D<t2.

Abstract: A magnetoresistance effect element with a small element size can be provided which achieves both an increase in a thermal stability factor ? and a reduction in a writing current IC0 and which improves a performance index ?/IC0(?A?1) obtained by dividing the thermal stability factor ? by the writing current IC0. The magnetoresistance effect element includes a first reference layer (B1), a first junction layer (11), a first magnetic layer (21), a first non-magnetic coupling layer (31), a second magnetic layer (22), and a second junction layer (12), and a film thickness of the first non-magnetic coupling layer (31) is 0.1 nm or more and 0.3 nm or less.

Abstract: A magnetoresistance effect element with a small element size can be provided which achieves both an increase in a thermal stability factor ? and a reduction in a writing current IC0 and which improves a performance index ?/IC0(?A?1) obtained by dividing the thermal stability factor ? by the writing current IC0. The magnetoresistance effect element includes a first reference layer (B1), a first junction layer (11), a first magnetic layer (21), a first non-magnetic coupling layer (31), a second magnetic layer (22), and a second junction layer (12), and a film thickness of the first non-magnetic coupling layer (31) is 0.1 nm or more and 0.3 nm or less.

Abstract: An information processing device configured to: acquire an image captured according to an imaging instruction by a mobile object; acquire sensor information including position information about the mobile object according to an exposure notification signal transmitted at a fixed timing that is relative to an exposure end timing of the captured image, the exposure notification signal being transmitted in response to the imaging instruction; and store the position information included in the acquired sensor information in association with the acquired image.

Abstract: A conveyance apparatus for conveying a mold into an injection molding machine includes a frame configured to form a supporting plane for supporting the mold, and an actuator configured to move the mold along the supporting plane between a first position inside the injection molding machine and a second position different from the first position, wherein the improvement to the conveyance apparatus includes the actuator being located below the supporting plane in a vertical direction; and a linking unit configured to link the mold and the actuator, wherein the linking unit is connectable to a side surface of the mold, wherein, in a state where the mold is at the second position, at least a part of the actuator is closer to the injection molding machine than the side surface of the mold in a conveying direction where the actuator moves the mold.

Abstract: The present invention provides a lens unit having a cover member which does not cause deviation in precision and capable of being manufactured efficiently at low cost. In a lens unit 10A, side surfaces of a cover member 14a continuing from a front end surface 29 to a rear end surface located at a lens side are formed in a regular quadrangular prism, at least two of corners of the regular quadrangular prism are in contact with an inner peripheral surface 27 of a housing space 17 of a holder 11a for housing the cover member 14a, a gap 34 is formed between each of the side surfaces of the cover member 14a and the inner peripheral surface 27 of the holder 11a, and an effective area of a light beam is located inside a light receiving area having a regular quadrangular shape surrounded by an outer peripheral edge of the front end surface 29 of the cover member 14a.

Abstract: Provided is an X-type 3-terminal STT-MRAM (spin orbital torque magnetization reversal component) having a high thermal stability index ? and a low writing current IC in a balanced manner. A magnetoresistance effect element has a configuration of channel layer (1)/barrier layer non adjacent magnetic layer (2b)/barrier layer adjacent magnetic layer (2a)/barrier layer (3).

Abstract: A position deviation calculated by a subtractor of a vacuum pump is input to the PIDs of three modes. The first PID is a PID controller for a high-bias mode, the second PID is a PID controller for a high-rigidity mode, and the third PID is a PID controller for a low-rigidity mode. The output signal of the third PID is extracted as a change of an indicator current for each clock of a PWM frequency and then the mean value of a change of an indicator current for several clocks is determined in a calculating unit. At this point, a switching control unit performs an operation on whether the mean value of the averaged change of the indicator current is larger than a preset redetermined value and then according to the result, an ? value is outputted in the range of 0 to 1 from the switching control unit.

Abstract: According to one embodiment, a consolidated transportation method arranges a plurality of baggage in a same transportation area and performs transportation. A consolidation determination item is defined. A first baggage corresponding to an easily transferred baggage item in the consolidation determination item is arranged in a first transportation area and transported. A second baggage corresponding to a highly sensitive baggage item in the consolidation determination item is arranged in a second transportation area and transported. A first transporter includes the first transportation area. A second transporter includes the second transportation area. The first transportation area and the second transportation area are physically separated.

Abstract: A perpendicular magnetization type three-terminal SOT-MRAM that does not need an external magnetic field is provided. A magnetoresistance effect element where a first magnetic layer/nonmagnetic spacer layer/recording layer are disposed in order, and the first magnetic layer and the nonmagnetic spacer layer are provided to a channel layer.

Abstract: Provided are a magnetoresistive element, a magnetic memory device, and a writing and reading method for a magnetic memory device, in which an aspect ratio of a junction portion can be decreased. A magnetoresistive element 1 of the invention, includes: a heavy metal layer 2 that is an epitaxial layer; and a junction portion 3 including a recording layer 31 that is provided on the heavy metal layer 2 and includes a ferromagnetic layer of an epitaxial layer magnetized in an in-plane direction, which is an epitaxial layer, a barrier layer 32 that is provided on the recording layer 31 and includes an insulating body, and a reference layer 33 that is provided on the barrier layer 32 and has magnetization fixed in the in-plane direction, in which the recording layer 31 is subjected to magnetization reversal by applying a write current to the heavy metal layer 2.

Abstract: A magnetic tunnel junction element (10) includes a configuration in which a reference layer (14) that includes a ferromagnetic material, a barrier layer (15) that includes O, a recording layer (16) that includes a ferromagnetic material including Co or Fe, a first protective layer (17) that includes O, and a second protective layer (18) that includes at least one of Pt, Ru, Co, Fe, CoB, FeB, or CoFeB are layered.

Abstract: Provided are a magnetic stacked film that is capable of improving a write efficiency, and a magnetic memory element and a magnetic memory using the magnetic stacked film. A magnetic stacked film 1 is a stacked film for a magnetic memory element 100, and includes: a heavy metal layer 2 that contains ? phase W1-xTax (0.00<x?0.30); and a recording layer 10 that includes a ferromagnetic layer 18 having a reversible magnetization direction and is adjacent to the heavy metal layer 2, in which a thickness of the heavy metal layer 2 is 2 nm or more and 8 nm or less.

Abstract: Provided is a magnetoresistance effect element in which the magnetization direction of the recording layer is perpendicular to the film surface and which has a high thermal stability factor ?, and a magnetic memory. A recording layer having a configuration of first magnetic layer/first non-magnetic coupling layer/first magnetic insertion layer/second non-magnetic coupling layer/second magnetic layer is sandwiched between the first and second non-magnetic layers and stacked so that a magnetic coupling force is generated between the first magnetic layer and the second magnetic layer.

Abstract: Provided are a magnetic stacked film that is capable of improving a write efficiency, and a magnetic memory element and a magnetic memory using the magnetic stacked film. A magnetic stacked film 1 is a stacked film for a magnetic memory element 100, and includes: a heavy metal layer 2 that contains ? phase W1-xTax (0.00<x?0.30); and a recording layer 10 that includes a ferromagnetic layer 18 having a reversible magnetization direction and is adjacent to the heavy metal layer 2, in which a thickness of the heavy metal layer 2 is 2 nm or more and 8 nm or less.