Patents by Inventor Hideo Tange

Hideo Tange has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11142484
    Abstract: A semiconductor production device component includes a first ceramic member including an AlN-based material, a second ceramic member including an AlN-based material, and a joint layer disposed between the first ceramic member and the second ceramic member so as to join the first ceramic member and the second ceramic member to each other. The joint layer includes a composite oxide containing Gd and Al, and Al2O3, and is free from AlN.
    Type: Grant
    Filed: July 13, 2017
    Date of Patent: October 12, 2021
    Assignee: NGK SPARK PLUG CO., LTD.
    Inventors: Kohei Mitsuya, Hideo Tange, Motoki Hotta, Takamichi Ogawa
  • Publication number: 20190304813
    Abstract: The scattering of a rare earth hydroxide is suppressed, and the loss of bond strength between a first ceramic member and a second ceramic member is reduced. A semiconductor production device component includes a first ceramic member including an AlN-based material, a second ceramic member including an AlN-based material, and a joint layer disposed between the first ceramic member and the second ceramic member so as to join the first ceramic member and the second ceramic member to each other, wherein the joint layer includes a perovskite oxide represented by ABO3 (wherein A is a rare earth element, and B is Al) and includes no rare earth single oxide containing exclusively a rare earth element and oxygen.
    Type: Application
    Filed: July 13, 2017
    Publication date: October 3, 2019
    Inventors: Kohei MITSUYA, Hideo TANGE, Motoki HOTTA, Takamichi OGAWA
  • Publication number: 20190284100
    Abstract: A first ceramic member and a second ceramic member are joined together at a lower joining temperature while reducing the loss of bond strength. A method for producing a semiconductor production device component includes a step of providing a first ceramic member including an AlN-based material, a step of providing a second ceramic member including an AlN-based material, and a step of joining the first ceramic member and the second ceramic member to each other by thermally pressing the first ceramic member and the second ceramic member to each other via a joint agent including Eu2O3, Gd2O3 and Al2O3 disposed between the first ceramic member and the second ceramic member.
    Type: Application
    Filed: July 13, 2017
    Publication date: September 19, 2019
    Inventors: Kohei MITSUYA, Hideo TANGE, Motoki HOTTA, Takamichi OGAWA
  • Publication number: 20190263724
    Abstract: A semiconductor production device component includes a first ceramic member including an AlN-based material, a second ceramic member including an AlN-based material, and a joint layer disposed between the first ceramic member and the second ceramic member so as to join the first ceramic member and the second ceramic member to each other. The joint layer includes a composite oxide containing Gd and Al, and Al2O3, and is free from AlN.
    Type: Application
    Filed: July 13, 2017
    Publication date: August 29, 2019
    Inventors: Kohei MITSUYA, Hideo TANGE, Motoki HOTTA, Takamichi OGAWA
  • Publication number: 20040226647
    Abstract: A method for producing a multi-layer ceramic capacitor 10 in which reliability of electrical contact between a via electrode 28 and an internal electrode layer 24 (24a or 24b) provided between ceramic layers 22 is enhanced. A laminated sheet 100 including ceramic layers 22 and internal electrode layers 24, the layers 22 and 24 being alternately laminated and combined together, is formed, through-holes 26 are formed in the laminated sheet 100 by means of laser irradiation, and an electrically conductive material is charged into the through-holes 26 using charging container 110, to thereby form via electrodes 28. The electrically conductive material is charged, under application of pressure, into each of the through-holes 26 via an opening of the through-hole 26.
    Type: Application
    Filed: October 8, 2003
    Publication date: November 18, 2004
    Applicant: NGK SPARK PLUG CO., LTD.
    Inventors: Junichi Ito, Hideo Tange, Jun Otsuka, Manabu Sato, Hisahito Kashima